公开(公告)号：US08168517B2

公开(公告)日：2012-05-01

申请号：US12388643

申请日：2009-02-19

Applicant: Jae-eung Oh

Inventor： Jae-eung Oh

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/0237 ,  B82Y10/00 ,  H01L21/02439 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02658 ,  H01L29/127

Abstract: There are provided a method for epitaxial growth capable of securing stable optical and electrical characteristics by minimizing defects produced in a second epitaxial layer when growing the second epitaxial layer on a first epitaxial layer having defects formed therein, and an epitaxial layer structure using the method. The method includes preparing a first epitaxial layer having a defect formed therein, forming a metal quantum dot on the first epitaxial layer, allowing the metal quantum dot to be moved onto a step of the first epitaxial layer due to a difference of surface energy, converting the metal quantum dot into a metal quantum-dot semiconductor crystal having a lattice constant corresponding to that of the first epitaxial layer, and growing a second epitaxial layer on the first epitaxial layer.

Abstract translation: 提供了一种用于外延生长的方法，其能够通过使在第二外延层中生长第二外延层在其中形成有缺陷的第一外延层上生长的缺陷和使用该方法的外延层结构最小化来确保稳定的光学和电学特性。 该方法包括制备其中形成有缺陷的第一外延层，在第一外延层上形成金属量子点，由于表面能的差异使金属量子点移动到第一外延层的台阶上， 金属量子点转换成具有对应于第一外延层的晶格常数的金属量子点半导体晶体，以及在第一外延层上生长第二外延层。

公开(公告)号：US08227327B2

公开(公告)日：2012-07-24

申请号：US12388056

申请日：2009-02-18

Applicant: Jae-eung Oh

Inventor： Jae-eung Oh

IPC: H01L21/20

CPC classification number: H01L21/02538 ,  B82Y10/00 ,  H01L21/02387 ,  H01L21/02428 ,  H01L21/02455 ,  H01L21/02513 ,  Y10S438/962

Abstract: There is provided a method for epitaxial growth, wherein a quantum dot is formed on an epitaxial layer using a quantum-dot forming material with an excellent lattice matching property, and the formed quantum dot is positioned on a defect in the epitaxial layer, thereby minimizing transfer of the defect into an epitaxial layer formed through a subsequent process. The method includes preparing a first epitaxial layer having a defect formed therein; coating an anti-surfactant on the first epitaxial layer; supplying a quantum-dot forming material lattice-matched with respect to the first epitaxial layer, thereby forming a quantum dot obtained by allowing the anti-surfactant to react with the quantum-dot forming material on the first epitaxial layer; allowing the quantum dot to be moved onto a step of the first epitaxial layer due to a difference of surface energies between the quantum dot and the first epitaxial layer; and growing a second epitaxial layer on the first epitaxial layer.

Abstract translation: 提供了一种用于外延生长的方法，其中使用具有优异的晶格匹配特性的量子点形成材料在外延层上形成量子点，并且形成的量子点位于外延层中的缺陷上，从而最小化 将缺陷转移到通过后续工艺形成的外延层中。 该方法包括制备其中形成有缺陷的第一外延层; 在第一外延层上涂覆抗表面活性剂; 提供与第一外延层晶格匹配的量子点形成材料，从而形成通过使抗表面活性剂与第一外延层上的量子点形成材料反应而获得的量子点; 由于量子点和第一外延层之间的表面能的差异，允许量子点移动到第一外延层的台阶上; 以及在所述第一外延层上生长第二外延层。

公开(公告)号：US08333839B2

公开(公告)日：2012-12-18

申请号：US11965235

申请日：2007-12-27

Applicant: Jae-eung Oh

Inventor： Jae-eung Oh

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/46 ,  C23C16/511 ,  C23C16/54

CPC classification number: C23C16/45551

Abstract: A vapor deposition reactor has a configuration where a substrate or a vapor deposition reactor moves in a non-contact state with each other to allow the substrate to pass by the reactor and an injection unit and an exhaust unit are installed as a basic module of the reactor for receiving a precursor or a reactant and for receiving and pumping a purge gas, respectively. With the use of a small-size inlet for the reactor, homogeneous film properties are obtained, the deposition efficiency of precursors is improved, and an amount of time required for a purge/pumping process can be reduced. In addition, since the reactor itself is configured to reflect each step of ALD, it does not need a valve. Moreover, the reactor makes it easier for users to apply remote plasma, use super high frequencies including microwave, and UV irradiation.

Abstract translation: 气相沉积反应器具有其中基板或气相沉积反应器以非接触状态彼此移动以允许基板通过反应器并且注入单元和排气单元作为基本模块安装的构造 用于接收前体或反应物并用于分别接收和泵送吹扫气体的反应器。 通过使用反应器的小尺寸入口，获得均匀的膜性质，提高了前体的沉积效率，并且可以减少吹扫/泵送过程所需的时间。 另外，由于反应器本身被配置为反映ALD的每个步骤，所以不需要阀。 此外，反应器使用户更容易应用远程等离子体，使用超高频，包括微波和紫外线照射。

公开(公告)号：US06013576A

公开(公告)日：2000-01-11

申请号：US902880

申请日：1997-07-30

Applicant: Jae-eung Oh ,  Sang-in Lee ,  Chang-soo Park

Inventor： Jae-eung Oh ,  Sang-in Lee ,  Chang-soo Park

IPC: C23C16/02 ,  C23C16/34 ,  C23C16/50 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L21/205

CPC classification number: H01L21/76864 ,  C23C16/0227 ,  C23C16/34 ,  H01L21/76841

Abstract: A metal nitride layer is formed on a substrate by exposing the substrate to a mixture including a nitrogen-containing organometallic gas and a hydrogen plasma to form a metal nitride layer on the substrate. The nitrogen-containing organometallic gas may comprise penta dimethyl amido tantalum (Ta(N(CH.sub.3).sub.2).sub.5, and the metal nitride layer may be formed by exposing comprises the step of exposing the substrate to a mixture including penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 and a hydrogen plasma at a temperature greater than 300.degree. C., more preferably, at a temperature of 300.degree. C. to 750.degree. C. and a pressure of 0.5 torr to 1.5 torr. The penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 is preferably provided to a chamber in which the substrate is placed at a mass flow rate of 50 sccm to 150 sccm, and the hydrogen plasma referably provided to the chamber at a mass flow rate of 30 sccm to 100 sccm. The hydrogen plasma may be produced external to the chamber in an atmosphere comprising hydrogen and an inert gas such as argon. A tantalum nitride (Ta.sub.3 N.sub.5 layer having a resistivity less than 1.times.10.sup.4 .mu..OMEGA.-cm may thereby be formed.

Abstract translation: 通过将衬底暴露于包含含氮有机金属气体和氢等离子体的混合物在衬底上形成金属氮化物层，以在衬底上形成金属氮化物层。 含氮有机金属气体可以包含五聚二甲基氨基钽（Ta（N（CH 3）2）5，并且金属氮化物层可以通过曝光形成包括将基底暴露于包括五聚二甲基氨基钽气体 Ta（N（CH 3）2）5和氢等离子体，温度高于300℃，更优选在300℃至750℃的温度下，压力为0.5托至1.5托。 五元二甲基氨基钽气体（Ta（N（CH 3）2）5优选设置在其中以50sccm至150sccm的质量流速放置基板的室中，并且氢气等离子体可以在 质量流量为30sccm至100sccm，氢气等离子体可以在包含氢气和惰性气体如氩气的气氛中在室外产生，氮化钽（具有小于1×10 4μM欧姆/ cm的电阻率的Ta 3 N 5层可以 从而形成。