利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

27 条记录 (耗时 0.029 秒)

    Method for making defect-free zone by laser-annealing of doped silicon
    1.
    发明授权
    Method for making defect-free zone by laser-annealing of doped silicon 失效
    通过激光退火掺杂硅制造无缺陷区的方法

    公开(公告)号：US4181538A

    公开(公告)日：1980-01-01

    申请号：US945925

    申请日：1978-09-26

    申请人： Jagdish Narayan ,  Clark W. White ,  Rosa T. Young

    发明人： Jagdish Narayan ,  Clark W. White ,  Rosa T. Young

    IPC分类号： H01L21/263 ,  H01L21/268 ,  H01L21/26

    CPC分类号： H01L21/268 ,  H01L21/2636 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/092 ,  Y10S148/093 ,  Y10S148/097

    摘要： This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.

    摘要翻译： 本发明是改善硅半导体材料的电性能的方法。 该方法包括用以波长，能级和持续时间的特殊组合为特征的大功率激光脉冲照射半导体材料的选定表面层。 这种组合会使层的熔化而不降低电性能，如少数载流子扩散长度。 该方法适用于改善待掺杂以在其中形成电连接的n型和p型硅的电性能。 该方法的另一个重要应用是从离子注入或扩散掺杂的硅衬底中实际上完全去除掺杂诱导的缺陷。

    Method for forming p-n junctions and solar-cells by laser-beam processing
    2.
    发明授权
    Method for forming p-n junctions and solar-cells by laser-beam processing 失效
    通过激光束处理形成p-n结和太阳能电池的方法

    公开(公告)号：US4147563A

    公开(公告)日：1979-04-03

    申请号：US932154

    申请日：1978-08-09

    申请人： Jagdish Narayan ,  Rosa T. Young

    发明人： Jagdish Narayan ,  Rosa T. Young

    IPC分类号： H01L31/04 ,  H01L21/22 ,  H01L21/225 ,  H01L21/268 ,  H01L31/18 ,  H01L21/26

    CPC分类号： H01L21/268 ,  H01L21/2254 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S148/09 ,  Y10S148/092 ,  Y10S148/153

    摘要： This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.

    摘要翻译： 本发明是用于制备诸如二极管和太阳能电池的p-n结器件的改进方法。 通过利用波长为约0.3〜1.1μm，能量面积密度为约1.0〜2.0J / cm 2的激光脉冲，将所选择的掺杂剂激光扩散到硅中，制备高质量结。 持续时间为约20至60纳秒。 最初，掺杂剂作为表面层沉积在硅上，优选为厚度为约50至100A的厚度。根据应用，选择上述脉冲参数的值以产生熔融 硅深度在约1000A至1μm的范围内。 本发明已经用于生产具有10.6％的一次太阳转换效率的太阳能电池，这些电池没有抗反射涂层或背表面场。

    Electrochemically stabilized CaNi5 alloys and electrodes
    3.
    发明授权
    Electrochemically stabilized CaNi5 alloys and electrodes 失效
    电化学稳定的CaNi5合金和电极

    公开(公告)号：US06524745B1

    公开(公告)日：2003-02-25

    申请号：US09314380

    申请日：1999-05-19

    申请人： Stanford R. Ovshinsky ,  Rosa T. Young

    发明人： Stanford R. Ovshinsky ,  Rosa T. Young

    IPC分类号： H01M458

    CPC分类号： H01M4/385 ,  H01M4/383 ,  H01M10/345 ,  Y10S420/90

    摘要： An electrochemically stabilized Ca—Ni hydrogen storage alloy material for use as the active negative electrode material of an alkaline electrochemical cell. The alloy material includes at least one modifier element which stabilizes the alloy material from degradation during electrochemical cycling in an alkaline cell, by protecting calcium within the alloy and preventing dissolution of calcium into the alkaline electrolyte. The alloy has the formula (Ca1−x−yMxNi2y)Ni5−zQz, where M is at least one element selected from the group consisting of misch metal, rare earth metals, zirconium and mixtures of Zr with Ti or V, Q is at least one element selected form the group consisting of Si, Al, Ge, Sn, In, Cu, Zn, Co, and mixtures thereof, x ranges between about 0.02 and 0.2, y ranges between about 0.02 and 0.4, and z ranges from about 0.05 to about 1.00.

    摘要翻译： 一种电化学稳定化的Ca-Ni储氢合金材料，用作碱性电化学电池的活性负极材料。 合金材料包括至少一种修饰元素，其通过保护合金中的钙并防止钙溶解到碱性电解质中，使合金材料在电解池循环中在碱性电池中稳定化降解。 该合金具有式（Ca1-x-yMxNi2y）Ni5-zQz，其中M是选自混合金属，稀土金属，锆以及Zr与Ti或V的混合物中的至少一种元素，Q至少为 选自由Si，Al，Ge，Sn，In，Cu，Zn，Co及其混合物组成的组中的一种元素，x在约0.02和0.2之间，y在约0.02和0.4之间，z在约0.05 至约1.00。

    Modified laser-annealing process for improving the quality of electrical P-N junctions and devices
    5.
    发明授权
    Modified laser-annealing process for improving the quality of electrical P-N junctions and devices 失效
    改进的激光退火工艺，用于提高电气P-N结和器件的质量

    公开(公告)号：US4436557A

    公开(公告)日：1984-03-13

    申请号：US349959

    申请日：1982-02-19

    申请人： Richard F. Wood ,  Rosa T. Young

    发明人： Richard F. Wood ,  Rosa T. Young

    IPC分类号： H01L21/268 ,  H01L31/068 ,  H01L31/18 ,  H01L21/263 ,  H01L21/24

    CPC分类号： H01L31/1804 ,  H01L21/268 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S148/09 ,  Y10S148/092 ,  Y10S148/093

    摘要： The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor material having a doped surface layer, (2) irradiating the layer with at least one laser pulse to effect melting of the layer, (3) permitting recrystallization of the melted layer, and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open-circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole at a selected elevated temperature, the temperature being selected to effect a reduction in the rate of the recrystallization but insufficient to effect substantial migration of impurities within the body. In the case of doped silicon substrates, the substrate may be heated to a temperature in the range of from about 200.degree. C. to 500.degree. C.

    摘要翻译： 本发明是一种用于生产改进的电连接器件的方法。 本发明可以应用于例如通过（1）提供具有掺杂表面层的晶体半导体材料体制造感光电连接器件的工艺，（2）用至少一个 激光脉冲来实现层的熔化，（3）允许熔融层的再结晶，和（4）为所得体提供电接触。 根据本发明，通过在选定的升高的温度下整体照射基板来增加装置的填充因子和开路电压参数，选择温度以降低 重结晶但不足以影响体内杂质的显着迁移。 在掺杂硅衬底的情况下，可以将衬底加热到​​约200℃至500℃的温度。