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公开(公告)号：US06634760B2
公开(公告)日：2003-10-21
申请号：US09940099
申请日：2001-08-27
IPC分类号： G02B508
CPC分类号： G02B5/283 , Y10T428/12632
摘要： Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 Å and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.
摘要翻译： 通过标准光学雕刻和抛光技术制造的球形和非球形光学元件是非常昂贵的。 这种表面可以通过金刚石车削廉价生产; 然而，金刚石转向表面的粗糙度阻止其用于EUV光刻。 在施加60周期的Mo / Si多层以反射波长的范围之前，使用聚酰亚胺涂层使这些波纹平滑，并获得接近63％的峰值反射率。 成本节约约为100。
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公开(公告)号：US6134049A
公开(公告)日：2000-10-17
申请号：US160264
申请日：1998-09-25
IPC分类号： B32B7/02 , B32B15/04 , G02B1/10 , G02B5/08 , G02B5/26 , G02B5/28 , G03F1/22 , G03F7/20 , F21V9/04
CPC分类号： G03F7/70958 , G02B5/0875 , G02B5/0891 , G02B5/26 , G03F1/22 , G21K1/062
摘要： Stress compensating systems that reduces/compensates stress in a multilayer without loss in reflectivity, while reducing total film thickness compared to the earlier buffer-layer approach. The stress free multilayer systems contain multilayer systems with two different material combinations of opposite stress, where both systems give good reflectivity at the design wavelengths. The main advantage of the multilayer system design is that stress reduction does not require the deposition of any additional layers, as in the buffer layer approach. If the optical performance of the two systems at the design wavelength differ, the system with the poorer performance is deposited first, and then the system with better performance last, thus forming the top of the multilayer system. The components for the stress reducing layer are chosen among materials that have opposite stress to that of the preferred multilayer reflecting stack and simultaneously have optical constants that allow one to get good reflectivity at the design wavelength. For a wavelength of 13.4 nm, the wavelength presently used for extreme ultraviolet (EUV) lithography, Si and Be have practically the same optical constants, but the Mo/Si multilayer has opposite stress than the Mo/Be multilayer. Multilayer systems of these materials have practically identical reflectivity curves. For example, stress free multilayers can be formed on a substrate using Mo/Be multilayers in the bottom of the stack and Mo/Si multilayers at the top of the stack, with the switch-over point selected to obtain zero stress. In this multilayer system, the switch-over point is at about the half point of the total thickness of the stack, and for the Mo/Be--Mo/Si system, there may be 25 deposition periods Mo/Be to 20 deposition periods Mo/Si.
摘要翻译： 应力补偿系统减少/补偿多层中的应力，而不损失反射率，同时减少与较早的缓冲层方法相比的总膜厚度。 无应力的多层系统包含具有两种不同材料组合的相反应力的多层系统，其中两个系统在设计波长处给出良好的反射率。 多层系统设计的主要优点是减压不需要任何附加层的沉积，如缓冲层方法一样。 如果两个系统的设计波长的光学性能不同，首先沉积性能较差的系统，然后再次具有更好性能的系统，从而形成多层系统的顶部。 应力降低层的组件选自具有与优选的多层反射叠层相反的应力的材料，并且同时具有允许在设计波长处获得良好的反射率的光学常数。 对于13.4nm的波长，目前用于极紫外（EUV）光刻的波长Si和Be实际上具有相同的光学常数，但Mo / Si多层具有与Mo / Be多层相反的应力。 这些材料的多层系统具有几乎相同的反射曲线。 例如，可以在堆叠底部使用Mo / Be多层和堆叠顶部的Mo / Si多层在衬底上形成无应力多层，选择切换点以获得零应力。 在该多层体系中，切换点为堆叠总厚度的大约一半，对于Mo / Be-Mo / Si系统，可能存在25个沉积周期Mo / Be至20个沉积周期Mo / Si。
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公开(公告)号：US06780496B2
公开(公告)日：2004-08-24
申请号：US10066108
申请日：2002-02-01
申请人： Sasa Bajt , James A. Folta , Eberhard A. Spiller
发明人： Sasa Bajt , James A. Folta , Eberhard A. Spiller
IPC分类号： B32B702
CPC分类号： G02B5/0891 , B82Y10/00 , G02B5/0825 , G21K1/062 , Y10T428/12493 , Y10T428/12674 , Y10T428/12729 , Y10T428/12826 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： A new capping multilayer structure for EUV-reflective Mo/Si multilayers consists of two layers: A top layer that protects the multilayer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath. One embodiment combines a first layer of Ru with a second layer of B4C. Another embodiment combines a first layer of Ru with a second layer of Mo. These embodiments have the additional advantage that the reflectivity is also enhanced. Ru has the best oxidation resistance of all materials investigated so far. B4C is an excellent barrier against silicide formation while the silicide layer formed at the Si boundary is well controlled.
摘要翻译： 用于EUV反射Mo / Si多层的新的封盖多层结构由两层组成：保护多层结构免受环境的顶层和作为顶层和下面结构之间的扩散阻挡层的底层。 一个实施例将第一层Ru与第二层B4C组合。 另一个实施例将第一层Ru与第二层Mo组合在一起。这些实施例具有增强反射率的附加优点。 Ru具有迄今为止研究的所有材料的最佳抗氧化性。 B4C是硅化物形成的良好屏障，而Si边界处形成的硅化物层得到很好的控制。
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公开(公告)号：US20090116619A1
公开(公告)日：2009-05-07
申请号：US12121177
申请日：2008-05-15
CPC分类号： G01J1/429 , G01J1/04 , G01J1/0414 , G01J1/0455 , G01J1/4228 , G01N21/4788 , G21K2207/00
摘要： A system in one embodiment includes a source for directing a beam of radiation at a sample; a multilayer mirror having a face oriented at an angle of less than 90 degrees from an axis of the beam from the source, the mirror reflecting at least a portion of the radiation after the beam encounters a sample; and a pixellated detector for detecting radiation reflected by the mirror. A method in a further embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample; not reflecting at least a majority of the radiation that is not diffracted by the sample; and detecting at least some of the reflected radiation. A method in yet another embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample using a multilayer mirror; and detecting at least some of the reflected radiation.
摘要翻译： 一个实施例中的系统包括用于在样本处引导辐射束的源; 多层反射镜，其具有朝向与源的光束的轴线成小于90度的角度定向的面，反射镜在光束遇到样本之后反射至少一部分辐射; 以及用于检测由反射镜反射的辐射的像素化检测器。 另一实施例中的方法包括将样品的辐射束引导; 反映由样品衍射的至少一些辐射; 不反映不被样品衍射的辐射的至少大部分; 以及检测所述反射辐射中的至少一些。 另一实施例中的方法包括将样品的辐射束引导; 使用多层反射镜反射由样品衍射的至少一些辐射; 以及检测所述反射辐射中的至少一些。
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5.发明授权Method for fabricating self-aligned high resolution non planar devices employing low resolution registration 失效用于制造采用低分辨率配准的自对准高分辨率非平面器件的方法
公开(公告)号：US4268952A
公开(公告)日：1981-05-26
申请号：US28461
申请日：1979-04-09
IPC分类号： H01L29/80 , H01L21/027 , H01L21/033 , H01L21/3205 , H01L21/338 , H01L29/78 , H01L29/812 , H01L21/302
CPC分类号： H01L29/812 , H01L21/0271 , H01L21/033
摘要： A method is disclosed for fabricating structures having electrically conductive regions such as high resolution semiconductor device and circuit designs which require only low resolution alignment steps during fabrication. The method is used to fabricate metal semiconductor field effect transistors (MESFET) and metal oxide semiconductor field effect transistors (MOSFET) devices and incorporates the following features. A device with very small (i.e. submicron) dimensions is positioned in a relatively large device well such that the exact position of the device in its well is not critical. Isolation and interconnection of devices in different wells is achieved by standard masking and alignment techniques with a resolution corresponding to the larger dimensions of the device wells. All high resolution features of the device are contained in a single masking level, however, to separate and insulate different elements of the device at such small dimensions different height levels are used in the device so that one masking step can produce zero lateral spacing between the different device elements. The disclosure provides examples of the present method applied to the fabrication of a MESFET device and a MOSFET device and to the isolation and interconnection of single devices into large circuits on a semiconductor chip.
摘要翻译： 公开了用于制造具有导电区域的结构的方法，例如在制造期间仅需要低分辨率对准步骤的高分辨率半导体器件和电路设计。 该方法用于制造金属半导体场效应晶体管（MESFET）和金属氧化物半导体场效应晶体管（MOSFET）器件，并结合以下特征。 具有非常小（即亚微米）尺寸的装置位于相对较大的装置中，使得装置在其井中的确切位置不是关键的。 通过标准掩蔽和对准技术实现不同井中的器件的隔离和互连，其分辨率对应于器件阱的较大尺寸。 然而，器件的所有高分辨率特征都包含在单个掩蔽级中，然而，为了在这样小的尺寸上分离和绝缘器件的不同元件，在器件中使用不同的高度级别，使得一个掩模步骤可以产生零的横向间隔 不同的设备元素。 本公开提供了应用于制造MESFET器件和MOSFET器件的本方法以及将单个器件隔离和互连到半导体芯片上的大电路中的示例。
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公开(公告)号：US5958143A
公开(公告)日：1999-09-28
申请号：US69491
申请日：1998-04-28
IPC分类号： B08B3/12
CPC分类号： B08B3/12
摘要： A cleaning process for surfaces with very demanding cleanliness requirements, such as extreme-ultraviolet (EUV) optical substrates. Proper cleaning of optical substrates prior to applying reflective coatings thereon is very critical in the fabrication of the reflective optics used in EUV lithographic systems, for example. The cleaning process involves ultrasonic cleaning in acetone, methanol, and a pH neutral soap, such as FL-70, followed by rinsing in de-ionized water and drying with dry filtered nitrogen in conjunction with a spin-rinse.
摘要翻译： 对具有非常苛刻的清洁度要求的表面进行清洁，如极紫外（EUV）光学基片。 在其上施加反射涂层之前对光学基板的适当清洁在例如EUV光刻系统中使用的反射光学元件的制造中是非常关键的。 清洁过程包括在丙酮，甲醇和pH中性皂（如FL-70）中进行超声波清洗，然后在去离子水中漂洗，并用干燥过滤的氮气与旋转冲洗液一起干燥。
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7.发明授权Phase retardation element and prism for use in an optical data storage system 失效用于光学数据存储系统的相位延迟元件和棱镜
公开(公告)号：US4595261A
公开(公告)日：1986-06-17
申请号：US541604
申请日：1983-10-13
申请人： Holger J. Baasch , Douglas S. Goodman , Francis S. Luecke , Ronald L. Soderstrom , Eberhard A. Spiller
发明人： Holger J. Baasch , Douglas S. Goodman , Francis S. Luecke , Ronald L. Soderstrom , Eberhard A. Spiller
CPC分类号： G11B7/1365 , G02B5/3083
摘要： A phase retardation element, for use in an optical data storage system, which provides a 90.degree. phase difference between two perpendicular polarized components of an incident wave with a single internal reflection from a surface coated with a thin film of dielectric or metal material.
摘要翻译： 一种在光学数据存储系统中使用的相位延迟元件，其提供入射波的两个垂直偏振分量之间的90°相位差，并从涂覆有电介质或金属材料薄膜的表面进行单次内反射。
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公开(公告)号：US07672430B2
公开(公告)日：2010-03-02
申请号：US12121177
申请日：2008-05-15
IPC分类号： G01N23/20
CPC分类号： G01J1/429 , G01J1/04 , G01J1/0414 , G01J1/0455 , G01J1/4228 , G01N21/4788 , G21K2207/00
摘要： A system in one embodiment includes a source for directing a beam of radiation at a sample; a multilayer mirror having a face oriented at an angle of less than 90 degrees from an axis of the beam from the source, the mirror reflecting at least a portion of the radiation after the beam encounters a sample; and a pixellated detector for detecting radiation reflected by the mirror. A method in a further embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample; not reflecting at least a majority of the radiation that is not diffracted by the sample; and detecting at least some of the reflected radiation. A method in yet another embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample using a multilayer mirror; and detecting at least some of the reflected radiation.
摘要翻译： 一个实施例中的系统包括用于在样本处引导辐射束的源; 多层反射镜，其具有朝向与源的光束的轴线成小于90度的角度定向的面，反射镜在光束遇到样本之后反射至少一部分辐射; 以及用于检测由反射镜反射的辐射的像素化检测器。 另一实施例中的方法包括将样品的辐射束引导; 反映由样品衍射的至少一些辐射; 不反映不被样品衍射的辐射的至少大部分; 以及检测所述反射辐射中的至少一些。 另一实施例中的方法包括将样品的辐射束引导; 使用多层反射镜反射由样品衍射的至少一些辐射; 以及检测所述反射辐射中的至少一些。
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公开(公告)号：US4018938A
公开(公告)日：1977-04-19
申请号：US591986
申请日：1975-06-30
申请人： Ralph Feder , Eberhard A. Spiller
发明人： Ralph Feder , Eberhard A. Spiller
CPC分类号： G03F1/22 , G03F7/2039 , H05K3/0002 , H05K3/108 , Y10S430/167 , Y10S430/168
摘要： A method of constructing masks characterized by a high aspect ratio. The method includes at least a single exposure of a mask by radiation which is transmitted by the substrate before impinging on the resist. In a specific embodiment the mask is partially completed and the already deposited mask modulates the radiation transmitted by the substrate before it exposes the resist.
摘要翻译： 构造以高纵横比为特征的掩模的方法。 该方法包括通过辐射对掩模进行的至少一次曝光，该辐射在被撞击到抗蚀剂之前由衬底透射。 在具体实施例中，掩模部分地完成，并且已经沉积的掩模在其暴露抗蚀剂之前调制由衬底传输的辐射。
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公开(公告)号：US3984582A
公开(公告)日：1976-10-05
申请号：US591980
申请日：1975-06-30
CPC分类号： G03F7/039 , G03F7/325 , Y10S430/143 , Y10S430/168
摘要： A positive resist image is produced by exposing, to radiation in a predetermined pattern, a polymeric material containing polymerized alkyl methacrylate units and polymerized monoethylenically unsaturated acid units. The exposed and unexposed areas are distinguished by their different respective abilities to be swelled in an appropriate swelling agent, and the swelled areas are removed by dispersal in a nonsolvent liquid.
摘要翻译： 通过以预定图案曝光包含聚合的甲基丙烯酸烷基酯单元和聚合的单烯属不饱和酸单元的聚合物材料来产生正性抗蚀剂图像。 暴露和未暴露的区域的区别在于它们各自的能力在适当的溶胀剂中溶胀，并且溶胀区域通过分散在非溶剂液体中除去。
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