Method for fabricating a field emission device and method for the operation thereof
    1.
    发明授权
    Method for fabricating a field emission device and method for the operation thereof 失效
    场致发射器件的制造方法及其动作方法

    公开(公告)号:US06364730B1

    公开(公告)日:2002-04-02

    申请号:US09484930

    申请日:2000-01-18

    IPC分类号: H01J902

    摘要: A method for operating a field emission device (100) having an electron emitter (115) includes the steps of providing an emitter-enhancing electrode (117) proximate to electron emitter (115), causing emitter-enhancing electrode (117) to emit electrons, and causing the electrons emitted by emitter-enhancing electrode (117) to be received by electron emitter (115). A method for fabricating a field emission device (100) includes the steps of forming a layer (126) of dielectric material, forming emitter-enhancing electrode (117) on layer (126) of dielectric material, forming an enhanced-emission structure (131) in emitter-enhancing electrode (117), removing a portion of layer (126) of dielectric material proximate to enhanced-emission structure (131) to form a well (114, 158), and forming electron emitter (115) within well (114, 158).

    摘要翻译: 一种用于操作具有电子发射器(115)的场致发射器件(100)的方法包括以下步骤:提供靠近电子发射器(115)的发射极增强电极(117),使发射极增强电极(117)发射电子 并且使由发射极增强电极(117)发射的电子被电子发射器(115)接收。 一种用于制造场发射器件(100)的方法包括以下步骤:形成介电材料层(126),在电介质材料的层(126)上形成发射极增强电极(117),形成增强发射结构(131 )在发射极增强电极(117)中,去除靠近增强发射结构(131)的介电材料层(126)的一部分以形成阱(114,158),并在阱内形成电子发射器(115) 114,158)。

    Field emission device having an emitter-enhancing electrode
    2.
    发明授权
    Field emission device having an emitter-enhancing electrode 失效
    具有发射极增强电极的场致发射器件

    公开(公告)号:US06400068B1

    公开(公告)日:2002-06-04

    申请号:US09484665

    申请日:2000-01-18

    IPC分类号: H01J1304

    CPC分类号: H01J3/022

    摘要: A field emission device (100) includes an electron emitter (115) and an emitter-enhancing electrode (117) having an enhanced-emission structure (131), which is disposed proximate to electron emitter (115). Enhanced-emission structure (131) is embodied by, for example, each of the following structures: a tapered portion (118) of emitter-enhancing electrode (117), an electron-emissive edge (135) that is generally parallel to an axis (136) of electron emitter (115), a combination of a conductive layer (137) and an electron-emissive layer (138) that is disposed proximate to an edge (133) of conductive layer (137), and an electron-emissive layer (146) having a thickness of less than about 500 angstroms.

    摘要翻译: 场致发射器件(100)包括电子发射器(115)和具有增强发射结构(131)的发射极增强电极(117),其设置在电子发射器(115)附近。 增强发射结构(131)通过例如以下每个结构实现:发射极增强电极(117)的锥形部分(118),大致平行于轴线的电子发射边缘(135) 电子发射器(115)的电极(136),靠近导电层(137)的边缘(133)设置的导电层(137)和电子发射层(138)的组合,以及电子发射 层(146)具有小于约500埃的厚度。

    Vacuum microelectronic device and method
    3.
    发明授权
    Vacuum microelectronic device and method 失效
    真空微电子器件及方法

    公开(公告)号:US06672925B2

    公开(公告)日:2004-01-06

    申请号:US09932642

    申请日:2001-08-17

    IPC分类号: H01J900

    摘要: A vacuum microelectronic device (10,40) emits electrons (37) from surfaces of nanotube emitters (17, 18). Extracting electrons from the surface of each nanotube emitter (17) results is a small voltage variation between each emitter utilized in the device (10, 40). Consequently, the vacuum microelectronic device (10,40) has a more controllable turn-on voltage and a consistent current density from each nanotube emitter (17,18).

    摘要翻译: 真空微电子器件(10,40)从纳米管发射器(17,18)的表面发射电子(37)。 从每个纳米管发射器(17)的表面提取电子的结果是在器件(10,40)中使用的每个发射极之间的电压变化很小。 因此,真空微电子器件(10,40)具有来自每个纳米管发射极(17,18)的更可控的接通电压和一致的电流密度。

    Electron emissive film
    4.
    发明授权
    Electron emissive film 失效
    电子发射膜

    公开(公告)号:US6087765A

    公开(公告)日:2000-07-11

    申请号:US984315

    申请日:1997-12-03

    CPC分类号: H01J1/304

    摘要: An electron-emissive film (170, 730) is made from graphite and has a surface defining a plurality of emissive clusters (100), which are uniformly distributed over the surface. Each of the emissive clusters (100) has dendrites (110) extending radially from a central point (120). Each of the dendrites (110) has a ridge (130), which has a radius of curvature of less than 10 nm. The graphene sheets (160) that form the dendrites (110) have a (002) lattice spacing within a range of 0.342-0.350 nanometers.

    摘要翻译: 电子发射膜(170,730)由石墨制成并且具有限定多个发射簇(100)的表面,其平均分布在表面上。 每个发射簇(100)具有从中心点(120)径向延伸的树突(110)。 树突(110)中的每一个具有脊(130),其具有小于10nm的曲率半径。 形成枝晶(110)的石墨烯片(160)的(002)晶格间距在0.342-0.350纳米的范围内。

    Method for fabricating an electron-emissive film
    5.
    发明授权
    Method for fabricating an electron-emissive film 失效
    电子发射膜的制造方法

    公开(公告)号:US06290564B1

    公开(公告)日:2001-09-18

    申请号:US09408699

    申请日:1999-09-30

    IPC分类号: H01J902

    摘要: A method for fabricating an electron-emissive film (100) includes the steps of providing a powder (124), which has a plurality of carbon nanotubes (104); providing a substrate (102), a surface (103) of which defines a plurality of interstices (107); and dry spraying powder (124) onto surface (103) of substrate (102). The adjustable parameters of the dry spraying step include a separation distance of a spray nozzle (120) from surface (103), a spray angle between a spray (121) and surface (103), and a nozzle pressure at an opening (123) of spray nozzle (120). The separation distance, spray angle, and nozzle pressure are selected to achieve, for example, uniformity of electron-emissive film (100) and adhesion of carbon nanotubes (104) to substrate (102). They can also be selected to achieve a perpendicular orientation of a length-wise axis (105) of each of carbon nanotubes (104) with respect to surface (103) and to achieve the break down of aggregates of carbon nanotubes (104), so that carbon nanotubes (104) are deposited on substrate (102) substantially as individually isolated carbon nanotubes (104).

    摘要翻译: 制造电子发射膜(100)的方法包括提供具有多个碳纳米管(104)的粉末(124)的步骤。 提供衬底(102),其表面(103)限定多个间隙(107); 和将喷雾粉末(124)喷涂到基材(102)的表面(103)上。 干喷涂步骤的可调节参数包括喷嘴(120)与表面(103)的间隔距离,喷雾(121)和表面(103)之间的喷射角度以及开口处的喷嘴压力(123) 选择分离距离,喷雾角度和喷嘴压力,以实现例如电子发射膜(100)的均匀性和碳纳米管(104)与基底(102)的粘附。 还可以选择它们以实现碳纳米管(104)中每个碳纳米管(104)相对于表面(103)的纵向轴线(105)的垂直取向,并且实现碳纳米管(104)的聚集体的分解,因此 基本上作为单独分离的碳纳米管(104)将碳纳米管(104)沉积在基板(102)上。

    Field emission device and method for the conditioning thereof
    6.
    发明授权
    Field emission device and method for the conditioning thereof 失效
    场致发射装置及其调理方法

    公开(公告)号:US06573642B1

    公开(公告)日:2003-06-03

    申请号:US09491357

    申请日:2000-01-26

    IPC分类号: H01J1304

    CPC分类号: H01J1/3044 H01J2201/30426

    摘要: A field emission device (100) includes an electron emitter structure (105) having a deuteride layer (108), which defines a surface (109) of electron emitter structure (105). Deuteride layer (108) is disposed upon an electron emitter (106), which is made from a metal. Deuteride layer (108) is a deuteride of the metal from which electron emitter (106) is made. A method for conditioning field emission device (100) includes the step of providing a contaminated cathode structure (137), which has a contaminated emitter structure (138). The method further includes the step of causing deuterium to react with a metal oxide layer (140) of emitter structure (138), so that the deuterium replaces the oxygen of metal oxide layer (140).

    摘要翻译: 场发射器件(100)包括具有限定电子发射器结构(105)的表面(109)的氘化层(108)的电子发射器结构(105)。 氘化层(108)设置在由金属制成的电子发射器(106)上。 氘化层(108)是制造电子发射体(106)的金属的氘化物。一种用于调节场发射装置(100)的方法包括提供污染的阴极结构(137)的步骤,该污染阴极结构具有污染的发射体结构 (138)。 该方法还包括使氘与发射极结构(138)的金属氧化物层(140)反应的步骤,使得氘代替金属氧化物层(140)的氧。

    Electron emissive film and method
    7.
    发明授权
    Electron emissive film and method 失效
    电子发射膜和方法

    公开(公告)号:US6100628A

    公开(公告)日:2000-08-08

    申请号:US322304

    申请日:1999-05-28

    摘要: A method for forming an electron emissive film (200, 730, 830) includes the steps of: (i) evaporating a graphite source (120, 620) in a cathodic arc deposition apparatus (100, 600) to create a carbon plasma (170, 670), (ii) applying a potential difference between the graphite source (120, 620) and a glass or silicon deposition substrate (130, 630, 710, 810) for accelerating the carbon plasma (170, 670) toward the deposition substrate (130, 630, 710, 810), (iii) providing a working gas within the cathodic arc deposition apparatus (100, 600), and (ii) depositing the carbon plasma (170, 670) onto the deposition substrate (130, 630, 710, 810).

    摘要翻译: 形成电子发射膜(200,730,830)的方法包括以下步骤:(i)在阴极电弧沉积设备(100,600)中蒸发石墨源(120,620)以产生碳等离子体(170 ,670),(ii)在石墨源(120,620)和玻璃或硅沉积衬底(130,630,710,810)之间施加电位差,用于将碳等离子体(170,670)加速到沉积衬底 (130,630,710,810),(iii)在阴极电弧沉积设备(100,600)内提供工作气体,和(ii)将碳等离子体(170,670)沉积到沉积衬底(130,630)上 ,710,810)。

    Field emission display having a multi-layered barrier structure
    8.
    发明授权
    Field emission display having a multi-layered barrier structure 失效
    具有多层势垒结构的场发射显示

    公开(公告)号:US06353286B1

    公开(公告)日:2002-03-05

    申请号:US09414737

    申请日:1999-10-08

    IPC分类号: H01J1924

    CPC分类号: H01J29/085 H01J2329/00

    摘要: A field emission display (100) includes an electron emitter structure (105) designed to emit an emission current (134), a phosphor (126) disposed to receive at an electron-receiving surface (127) emission current (134), and a multi-layered barrier structure (125) disposed on electron-receiving surface (127) of phosphor (126). Multi-layered barrier structure (125) of the preferred embodiment includes an aluminum layer (128) disposed on electron-receiving surface (127) of phosphor (126) and a carbon layer (129) disposed on aluminum layer (128).

    摘要翻译: 场致发射显示器(100)包括被设计为发射发射电流(134)的电子发射器结构(105),设置成在电子接收表面(127)发射电流(134))处接收的荧光体(126) 设置在荧光体(126)的电子接收表面(127)上的多层势垒结构(125)。 优选实施例的多层阻挡结构(125)包括设置在磷光体(126)的电子接收表面(127)上的铝层(128)和设置在铝层(128)上的碳层。