Abstract:
An amorphous multi-layered structure (100, 200) is formed by a method including the steps of: i) positioning a deposition substrate (101) in a physical vapor deposition apparatus (300, 400, 500) ii) ionizing a precursor of a multi-phase material within the physical vapor deposition apparatus (300, 400, 500) iv) modulating the total ion impinging energy of the ions to deposit layers having predetermined properties corresponding to the total ion impinging energy values.
Abstract:
A method for forming an electron emissive film (200, 730, 830) includes the steps of: (i) evaporating a graphite source (120, 620) in a cathodic arc deposition apparatus (100, 600) to create a carbon plasma (170, 670), (ii) applying a potential difference between the graphite source (120, 620) and a glass or silicon deposition substrate (130, 630, 710, 810) for accelerating the carbon plasma (170, 670) toward the deposition substrate (130, 630, 710, 810), (iii) providing a working gas within the cathodic arc deposition apparatus (100, 600), and (ii) depositing the carbon plasma (170, 670) onto the deposition substrate (130, 630, 710, 810).
Abstract:
An amorphous multi-layered structure (100, 200) is formed by a method including the steps of: i) positioning a deposition substrate (101) in a physical vapor deposition apparatus, (300, 400, 500) ii) ionizing a precursor of a multi-phase material within the physical vapor deposition apparatus (300, 400, 500) iv) modulating the total ion impinging energy of the ions to deposit layers having predetermined properties corresponding to the total ion impinging energy values.
Abstract:
A method for forming a thin film (220) of luminescent zinc oxide includes the steps of: (i) providing a mixture (170) of powdered zinc oxide and powdered graphite, (ii) providing a substrate (140) at a distance of about 9 millimeters from the mixture (170), (iii) disposing the mixture (170) and substrate (140) within an apparatus (100) that provides a confined environment having a partial pressure of oxygen of about 0.21 atmospheres, (iv) heating the mixture (170) to a temperature of about 850 degrees Celsius, and (v) establishing a temperature gradient between the substrate (140) and the mixture (170) of about 15 degrees, the temperature of the substrate (140) being less than the temperature of the mixture (170).