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    METHODS FOR REMOVING EXTRANEOUS AMOUNTS OF MOLDING MATERIAL FROM A SUBSTRATE
    1.
    发明申请
    METHODS FOR REMOVING EXTRANEOUS AMOUNTS OF MOLDING MATERIAL FROM A SUBSTRATE 审中-公开
    从基板上移除成型材料的特殊材料的方法

    公开(公告)号：US20060201910A1

    公开(公告)日：2006-09-14

    申请号：US11420840

    申请日：2006-05-30

    申请人： James Getty ,  Jiangang Zhao

    发明人： James Getty ,  Jiangang Zhao

    IPC分类号： C03C15/00

    CPC分类号： B29C59/14 ,  H01L21/56 ,  H01L2924/0002 ,  H05K3/288 ,  H01L2924/00

    摘要： Methods for removing thin layers of extraneous multi-component molding material from one or more areas on a substrate. The methods include exposing the substrate to a plasma effective to remove a non-particulate component of the molding material from each area. The methods further include exposing the substrate to a non-plasma process effective to remove a particulate component of the molding material from the area.

    摘要翻译： 从衬底上的一个或多个区域去除外部多组分成型材料薄层的方法。 所述方法包括将基板暴露于有效地从每个区域去除模制材料的非颗粒组分的等离子体。 所述方法还包括将衬底暴露于有效地从该区域去除模制材料的颗粒组分的非等离子体工艺。

    Plasma process for removing excess molding material from a substrate
    2.
    发明申请
    Plasma process for removing excess molding material from a substrate 有权
    用于从基底去除多余成型材料的等离子体工艺

    公开(公告)号：US20060131790A1

    公开(公告)日：2006-06-22

    申请号：US11021341

    申请日：2004-12-22

    申请人： James Getty ,  Jiangang Zhao

    发明人： James Getty ,  Jiangang Zhao

    IPC分类号： B23K26/38 ,  H01S3/00 ,  C23F1/00 ,  B29C35/08

    CPC分类号： H01L21/56 ,  B29C59/14 ,  H01L2924/0002 ,  H05K3/288 ,  H01L2924/00

    摘要： A method for removing thin layers of a two-component molding material from areas on a substrate. The method includes using a plasma formed using a first gas mixture for removing one component of the molding material and a plasma formed using a different second gas mixture for removing the other component of the molding material. For filled epoxies commonly used as molding materials, the first gas mixture may be an oxygen-rich mixture of an oxygen-containing gas species and a fluorine-containing gas species, and the second gas mixture may be a fluorine-rich mixture of the same gases.

    摘要翻译： 一种从基板上的区域去除双组分成型材料薄层的方法。 该方法包括使用使用第一气体混合物形成的等离子体，以除去模制材料的一个组分，以及使用不同的第二气体混合物形成的等离子体，以除去模制材料的其它组分。 对于通常用作成型材料的填充环氧树脂，第一气体混合物可以是含氧气体物质和含氟气体物质的富氧混合物，并且第二气体混合物可以是其富含氟的混合物 气体。

    APPARATUS AND METHODS FOR IMPROVING TREATMENT UNIFORMITY IN A PLASMA PROCESS
    8.
    发明申请
    APPARATUS AND METHODS FOR IMPROVING TREATMENT UNIFORMITY IN A PLASMA PROCESS 审中-公开
    用于改善等离子体工艺中处理均匀性的装置和方法

    公开(公告)号：US20080296261A1

    公开(公告)日：2008-12-04

    申请号：US12125335

    申请日：2008-05-22

    申请人： Jiangang Zhao ,  James D. Getty

    发明人： Jiangang Zhao ,  James D. Getty

    IPC分类号： C23F1/00 ,  C23F1/08

    CPC分类号： H01J37/32642 ,  H01J37/32623 ,  H01J2237/3343 ,  H01L21/67069

    摘要： Apparatus and methods for improving treatment uniformity in a plasma process. The sacrificial body, which is extends about an outer peripheral edge of the workpiece during plasma processing, is composed of a plasma-removable material. The sacrificial body may include multiple sections that are arranged to define a circular geometrical shape. The sacrificial body functions to increase the effective outer diameter of the workpiece, which operates to alleviate detrimental edge effects intrinsic to plasma processing by effectively reducing the etch rate near the outer peripheral edge of the workpiece.

    摘要翻译： 用于改善等离子体工艺中的处理均匀性的装置和方法。 在等离子体处理期间围绕工件的外周缘延伸的牺牲体由等离子体可除去材料构成。 牺牲体可以包括被布置成限定圆形几何形状的多个部分。 牺牲体用于增加工件的有效外径，其通过有效地降低工件外周边缘附近的蚀刻速率来减轻等离子体处理固有的有害边缘影响。