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    Lithographic Apparatus and Device Manufacturing Method
    6.
    发明申请
    Lithographic Apparatus and Device Manufacturing Method 审中-公开
    光刻设备和器件制造方法

    公开(公告)号：US20130194562A1

    公开(公告)日：2013-08-01

    申请号：US13879193

    申请日：2011-09-13

    申请人： Hendrik Antony Johannes Neerhof ,  Markus Franciscus Antonius Eurlings

    发明人： Hendrik Antony Johannes Neerhof ,  Markus Franciscus Antonius Eurlings

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70133 ,  G03F7/70191 ,  G03F7/702 ,  G03F7/70525 ,  G03F7/70575 ,  G03F7/7085 ,  G03F7/70983

    摘要： A lithographic apparatus comprising a source of EUV radiation, an illumination system configured to condition a radiation beam, and a projection system configured to project the radiation beam onto a substrate, wherein the apparatus further comprises a filter configured to prevent or reduce the transmission of unwanted radiation and an apparatus configured to detect damage of the filter, wherein the damage detection apparatus comprises an antenna configured to receive radio waves and an analysis apparatus configured to determine the presence of filter damage based upon the received radio waves.

    摘要翻译： 包括EUV辐射源的光刻设备，被配置为调节辐射束的照明系统以及被配置为将辐射束投影到衬底上的投影系统，其中所述设备还包括被配置为防止或减少不想要的辐射的传输的过滤器 辐射和被配置为检测过滤器的损坏的装置，其中所述损坏检测装置包括被配置为接收无线电波的天线和被配置为基于所接收的无线电波来确定过滤器损坏的存在的分析装置。

    Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence
    7.
    发明授权
    Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence 有权
    用于执行基于模型的光学邻近校正因子分解邻域影响的装置，方法和计算机程序产品

    公开(公告)号：US07349066B2

    公开(公告)日：2008-03-25

    申请号：US11122220

    申请日：2005-05-05

    申请人： Markus Franciscus Antonius Eurlings ,  Thomas Laidig ,  Uwe Hollerbach

    发明人： Markus Franciscus Antonius Eurlings ,  Thomas Laidig ,  Uwe Hollerbach

    IPC分类号： G03B27/70 ,  G03B27/42 ,  G06F17/50

    CPC分类号： G03F1/36

    摘要： Model Based Optical Proximity Correction (MOPC) biasing techniques may be utilized for optimizing a mask pattern. However, conventional MOPC techniques do not account for influence from neighboring features on a mask. This influence may be factored in the following manner—first, generating a predicted pattern from a target pattern and selecting a plurality of evaluation points at which biasing may be determined. Next, a set of multivariable equations are generated for each evaluation point, each equation representing influence of neighboring features on a mask. The equations are solved to determine that amount of bias at each evaluation point, and the mask is optimized accordingly. This process may be repeated until the mask pattern is further optimized.

    摘要翻译： 基于模型的光学邻近校正（MOPC）偏置技术可用于优化掩模图案。 然而，传统的MOPC技术不能解释掩模上相邻特征的影响。 这种影响可以以以下方式考虑：首先，从目标图案生成预测图案，并且选择可以确定偏置的多个评估点。 接下来，为每个评估点生成一组多变量方程，每个方程表示相邻特征对掩模的影响。 求解等式以确定每个评估点的偏差量，并相应地优化掩模。 可以重复该过程，直到掩模图案进一步优化。

    Method of removing assist features utilized to improve process latitude
    8.
    发明授权
    Method of removing assist features utilized to improve process latitude 有权
    消除辅助功能的方法，以改善过程的纬度

    公开(公告)号：US06875545B2

    公开(公告)日：2005-04-05

    申请号：US10305364

    申请日：2002-11-27

    申请人： Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Duan-Fu Stephen Hsu

    发明人： Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Duan-Fu Stephen Hsu

    IPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G02B31/00

    CPC分类号： G03F7/70125 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70441 ,  G03F7/70466

    摘要： A method of transferring a lithographic pattern onto a substrate by use of a lithographic apparatus. The method includes the steps of: (1) defining features to be printed on the substrate; (2) determining which of the features require assist features to be disposed adjacent thereto in order for the features to be printed within defined resolution limits; (3) generating a mask containing the features to be printed and the assist features; (4) performing a first illumination process so as to print the features on the substrate, the first illumination process resulting in the partial printing of the assist features on the substrate; and (5) performing a second illumination process so as to reduce the amount of the assist features printed on the substrate; the second illumination process entails the step of performing a quadrapole illumination.

    摘要翻译： 通过使用光刻设备将光刻图案转印到基板上的方法。 该方法包括以下步骤：（1）定义要印刷在基底上的特征; （2）确定哪些特征要求辅助特征与其邻近设置，以使特征被打印在限定的分辨率限度内; （3）产生包含要印刷的特征和辅助特征的掩模; （4）执行第一照明处理以便在所述基板上打印所述特征，所述第一照明处理导致所述辅助特征部分地印刷在所述基板上; 和（5）执行第二照明处理以减少印刷在基板上的辅助特征量; 第二照明处理需要执行四极照明的步骤。

    Optical proximity correction using chamfers and rounding at corners
    9.
    发明授权
    Optical proximity correction using chamfers and rounding at corners 有权
    使用倒角进行光学邻近校正，并在角落四舍五入

    公开(公告)号：US07355681B2

    公开(公告)日：2008-04-08

    申请号：US11101649

    申请日：2005-04-08

    申请人： Thomas Laidig ,  Markus Franciscus Antonius Eurlings

    发明人： Thomas Laidig ,  Markus Franciscus Antonius Eurlings

    IPC分类号： G03B27/32 ,  G03B27/42 ,  G03F9/00

    CPC分类号： G03F1/36

    摘要： Disclosed is a method of optimizing a design to be formed on a substrate. The method includes approximating rounding of at least one corner of an image of the design; generating a representation of the design further to the approximate rounding of the at least one corner; generating an initial representation of a mask utilized to image the design based on the representation; and performing Optical Proximity Correction (OPC) further to the initial representation of the mask.

    摘要翻译： 公开了一种优化要在基板上形成的设计的方法。 该方法包括近似设计图像的至少一个角的舍入; 产生所述设计的表示进一步到所述至少一个角的近似舍入; 生成用于基于所述表示对所述设计进行成像的掩模的初始表示; 并进一步执行光学近距校正（OPC）以进行掩模的初始表示。