公开(公告)号：US20180331127A1

公开(公告)日：2018-11-15

申请号：US15953614

申请日：2018-04-16

Applicant: Japan Display Inc.

Inventor： Toshinari SASAKI ,  Marina SHIOKAWA

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/7869

Abstract: A semiconductor device including a substrate, a first insulating layer above the substrate, a first transistor including a first oxide semiconductor layer above the first insulating layer, and a second transistor including a second oxide semiconductor layer above the first insulating layer, a composition of the second oxide semiconductor layer being different from a composition of the first oxide semiconductor layer.

公开(公告)号：US20190244979A1

公开(公告)日：2019-08-08

申请号：US15929125

申请日：2019-04-18

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Yohei YAMAGUCHI ,  Hajime WATAKABE ,  Akihiro HANADA ,  Hirokazu WATANABE ,  Marina SHIOKAWA

IPC: H01L27/12 ,  H01L29/49 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/4763 ,  H01L21/465

CPC classification number: H01L27/1225 ,  G02F1/133305 ,  G02F1/13452 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2202/10 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02565 ,  H01L21/465 ,  H01L21/47635 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/4983 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: A display device to improve reliability of the TFT of the oxide semiconductor, including: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor; a first gate insulating film is formed on the first oxide semiconductor, a gate electrode is formed on the first gate insulating film, an interlayer insulating film is formed over the gate electrode; the gate insulating film includes a first silicon oxide film, the gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy; the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film.