-
公开(公告)号：US08871105B2
公开(公告)日：2014-10-28
申请号：US13416465
申请日：2012-03-09
申请人： Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller , Qing Xu , Seongjun Heo , Jin Hwan Ham , Sang Joon Yoon , Camelia Rusu
发明人： Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller , Qing Xu , Seongjun Heo , Jin Hwan Ham , Sang Joon Yoon , Camelia Rusu
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/308
CPC分类号： H01L21/30655 , B81C1/00619 , B81C2201/0112 , H01L21/3086
摘要： A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.
摘要翻译： 提供了一种用于在等离子体处理室中蚀刻硅的方法，其具有工作压力和工作偏压。 该方法包括：在硅中执行第一垂直蚀刻以产生具有第一深度和侧壁的孔; 在侧壁上进行保护层的沉积; 执行第二垂直蚀刻以将所述孔加深到第二深度并且产生第二侧壁，所述第二侧壁包括第一槽，第二槽和峰，所述第一槽对应于所述第一侧壁，所述第二槽对应于 第二侧壁，该峰设置在第一槽和第二槽之间; 并进行第三次蚀刻以降低峰值。
-
公开(公告)号：US20130237062A1
公开(公告)日：2013-09-12
申请号：US13416465
申请日：2012-03-09
申请人： Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller , Qing Xu , Seongjun Heo , Jin Hwan Ham , Sang Joon Yoon , Camelia Rusu
发明人： Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller , Qing Xu , Seongjun Heo , Jin Hwan Ham , Sang Joon Yoon , Camelia Rusu
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , B81C1/00619 , B81C2201/0112 , H01L21/3086
摘要： A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.
摘要翻译： 提供了一种用于在等离子体处理室中蚀刻硅的方法，其具有工作压力和工作偏压。 该方法包括：在硅中执行第一垂直蚀刻以产生具有第一深度和侧壁的孔; 在侧壁上进行保护层的沉积; 执行第二垂直蚀刻以将所述孔加深到第二深度并产生第二侧壁，所述第二侧壁包括第一槽，第二槽和峰，所述第一槽对应于所述第一侧壁，所述第二槽对应于 第二侧壁，该峰设置在第一槽和第二槽之间; 并进行第三次蚀刻以降低峰值。
-
公开(公告)号：US08609548B2
公开(公告)日：2013-12-17
申请号：US13188174
申请日：2011-07-21
申请人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
发明人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/30655 , H01J37/32082 , H01J37/32449 , H01L21/76802 , H01L21/76898
摘要： A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译： 提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层的方法，其包括多个循环。 每个循环包括沉积阶段和蚀刻阶段。 沉积阶段包括提供沉积气体流，从等离子体处理室中的沉积气体形成等离子体，在沉积阶段提供第一偏压以提供各向异性沉积，并停止沉积气体流入等离子体处理 房间。 蚀刻阶段包括提供蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，在蚀刻阶段期间提供第二偏压，其中第一偏压大于第二偏压，并停止流动 的蚀刻气体进入等离子体处理室。
-
公开(公告)号：US20120309194A1
公开(公告)日：2012-12-06
申请号：US13188174
申请日：2011-07-21
申请人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
发明人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , H01J37/32082 , H01J37/32449 , H01L21/76802 , H01L21/76898
摘要： A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译： 提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层的方法，其包括多个循环。 每个循环包括沉积阶段和蚀刻阶段。 沉积阶段包括提供沉积气体流，从等离子体处理室中的沉积气体形成等离子体，在沉积阶段提供第一偏压以提供各向异性沉积，并停止沉积气体流入等离子体处理 房间。 蚀刻阶段包括提供蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，在蚀刻阶段期间提供第二偏压，其中第一偏压大于第二偏压，并停止流动 的蚀刻气体进入等离子体处理室。
-
5.发明授权公开(公告)号：US08440473B2
公开(公告)日：2013-05-14
申请号：US13154075
申请日：2011-06-06
IPC分类号： H01L21/00
CPC分类号： H01L21/30655 , H01J37/32972
摘要： A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译： 提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层中的方法。 提供了一种光学定时沉积阶段，包括提供沉积相气体流，检测等离子体处理室内的沉积气体的存在，提供用于从等离子体处理室中的沉积相气体形成等离子体的RF能量，并停止流动 的沉积气体进入等离子体处理室。 提供光学定时的蚀刻阶段，包括提供蚀刻气体流，检测等离子体处理室内的蚀刻气体的存在，提供用于从等离子体处理室中的蚀刻气体形成等离子体的RF能量，并停止 蚀刻气体流入等离子体处理室。
-
6.发明授权公开(公告)号：US08691698B2
公开(公告)日：2014-04-08
申请号：US13369125
申请日：2012-02-08
申请人： Qing Xu , William Thie , Camelia Rusu
发明人： Qing Xu , William Thie , Camelia Rusu
IPC分类号： H01L21/311
CPC分类号： H01L21/30655 , H01L21/32137
摘要： A method for etching features in a silicon layer disposed below a mask in a plasma processing chamber a plurality of cycles is provided. A deposition phase forming a deposition on the silicon layer in the plasma processing chamber is provided comprising providing a deposition gas into the plasma processing chamber wherein the deposition gas comprises a halogen containing etchant component and a fluorocarbon deposition component, forming the deposition gas into a plasma, which provides a net deposition on the silicon layer, and stopping the flow of the deposition gas. A silicon etch phase is provided, comprising providing a silicon etch gas into the plasma processing chamber that is different than the deposition gas, forming the silicon etch gas into a plasma to etch the silicon layer, and stopping the flow of the silicon etch gas.
摘要翻译： 提供了一种在等离子体处理室中设置在掩模下方的硅层中的特征的多个循环的方法。 提供了在等离子体处理室中在硅层上形成沉积的沉积阶段，其包括向等离子体处理室提供沉积气体，其中沉积气体包括含卤素的蚀刻剂组分和氟碳沉积组分，将沉积气体形成等离子体 ，其在硅层上提供净沉积，并停止沉积气体的流动。 提供硅蚀刻相，包括提供与沉积气体不同的等离子体处理室中的硅蚀刻气体，将硅蚀刻气体形成等离子体以蚀刻硅层，并停止硅蚀刻气体的流动。
-
7.发明申请USE OF SPECTRUM TO SYNCHRONIZE RF SWITCHING WITH GAS SWITCHING DURING ETCH 有权在ETCH期间使用与燃气切换同步射频切换的频谱公开(公告)号：US20120309198A1
公开(公告)日：2012-12-06
申请号：US13154075
申请日：2011-06-06
IPC分类号： H01L21/302 , H01L21/3065 , C23F1/08
CPC分类号： H01L21/30655 , H01J37/32972
摘要： A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译： 提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层中的方法。 提供了一种光学定时沉积阶段，包括提供沉积相气体流，检测等离子体处理室内的沉积气体的存在，提供用于从等离子体处理室中的沉积相气体形成等离子体的RF能量，并停止流动 的沉积气体进入等离子体处理室。 提供光学定时的蚀刻阶段，包括提供蚀刻气体流，检测等离子体处理室内的蚀刻气体的存在，提供用于从等离子体处理室中的蚀刻气体形成等离子体的RF能量，并停止 蚀刻气体流入等离子体处理室。
-
8.发明申请公开(公告)号：US20130203256A1
公开(公告)日：2013-08-08
申请号：US13369125
申请日：2012-02-08
申请人： Qing Xu , William Thie , Camelia Rusu
发明人： Qing Xu , William Thie , Camelia Rusu
IPC分类号： H01L21/302
CPC分类号： H01L21/30655 , H01L21/32137
摘要： A method for etching features in a silicon layer disposed below a mask in a plasma processing chamber a plurality of cycles is provided. A deposition phase forming a deposition on the silicon layer in the plasma processing chamber is provided comprising providing a deposition gas into the plasma processing chamber wherein the deposition gas comprises a halogen containing etchant component and a fluorocarbon deposition component, forming the deposition gas into a plasma, which provides a net deposition on the silicon layer, and stopping the flow of the deposition gas. A silicon etch phase is provided, comprising providing a silicon etch gas into the plasma processing chamber that is different than the deposition gas, forming the silicon etch gas into a plasma to etch the silicon layer, and stopping the flow of the silicon etch gas.
摘要翻译： 提供了一种用于在置于掩模下面在等离子体处理室中的多个周期的硅层中蚀刻特征的方法。 沉积阶段形成在等离子体处理室中的硅层上的沉积提供了一种包括提供沉积气体进入所述等离子体处理室，其中该沉积气体包括含有蚀刻剂组分和碳氟化合物的沉积成分的卤素，在形成沉积气体形成等离子体 ，它提供了在硅层上的净沉积，以及停止该沉积气体流。 甲硅蚀刻阶段提供，其包括：提供硅蚀刻气体流入该等离子体处理室比所述沉积气体不同，在形成硅蚀刻气体形成等离子体来蚀刻硅层，以及停止该硅蚀刻气体的流动。
-
公开(公告)号：US10152650B2
公开(公告)日：2018-12-11
申请号：US15557449
申请日：2016-03-08
申请人： Qing Xu
发明人： Qing Xu
摘要： A trademark retrieval method, comprising: establishing a sample trademark library and establishing a correlation between sample trademarks and division data for figurative element codes of known pending or registered figurative trademarks; extracting and processing image feature information about the sample trademarks, and establishing a correlation between the sample trademarks and the extracted image feature information; extracting image feature information about a trademark to be retrieved; carrying out matching retrieval by taking the image feature information as a retrieval condition, and finding out a sample trademark reaching a pre-determined similarity degree, and a sample trademark with the highest similarity degree and a corresponding figurative element code; acquiring and confirming a figurative element code of the trademark to be retrieved; taking the figurative element code as a retrieval condition to carry out matching retrieval, and finding out a matching sample trademark; collecting a result retrieved by taking the image feature information as the retrieval condition and a result retrieved by taking the figurative element code as the retrieval condition; and sequencing the collected trademarks according to the similarity degree of the image feature information. By means of the present disclosure, the standardized retrieval of figurative trademarks can be realized.
-
10.发明授权Rhizopus oryzae strain, mutagenesis and screening methods thereof, and methods of fermenting to produce fumaric acid 有权米根霉菌株，其诱变和筛选方法以及发酵产生富马酸的方法公开(公告)号：US08663972B2
公开(公告)日：2014-03-04
申请号：US13992233
申请日：2011-04-16
摘要： A rhizopus oryzae strain, mutagenesis and screening methods thereof, and methods of producing fumaric acid by fermentation. The strain is named as Rhizopus oryzae ME-F13, and deposited in China Center for Type Culture Collection with depository number CCTCC M 2010351. The strain is obtained by physically mutagenizing the original strain ME-F12 through ion injection, culturing the processed bacteria on the solid selective plate containing 2-D-deoxylucose (2-DG) and picking up 2-DG-resistant single colony. The strain is capable of simultaneously saccharifying starchy material and fermenting it to produce fumaric acid. With an improved enzymatic activity, the strain can be directly used to ferment raw starchy materials without needing pre-saccharifying.
摘要翻译： 根霉菌株，其诱变和筛选方法，以及通过发酵产生富马酸的方法。 该菌株被命名为米曲霉ME-F13，并存放于中国型号培养基中心，存放号码为CCTCC M 2010351.该菌株是通过离子注射物理诱变原始菌株ME-F12获得的， 含有2-D脱氧葡萄糖（2-DG）的固体选择性板和拾取2-DG抗性单个菌落。 该菌株能够同时糖化淀粉物质并发酵以产生富马酸。 具有改善的酶活性，该菌株可以直接用于发酵生淀粉材料，而不需要预糖化。
-
-
-
-
-
-
-
-
-
搜索结果
68 条记录 (耗时 0.034 秒)
