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    Dopant activation in doped semiconductor substrates
    1.
    发明授权
    Dopant activation in doped semiconductor substrates 失效
    掺杂半导体衬底中的掺杂剂活化

    公开(公告)号：US07989366B2

    公开(公告)日：2011-08-02

    申请号：US11844810

    申请日：2007-08-24

    申请人： Jeffrey C. Munro ,  Srinivas D. Nemani ,  Young S. Lee ,  Marlon Menezes ,  Christopher Dennis Bencher ,  Vijay Parihar

    发明人： Jeffrey C. Munro ,  Srinivas D. Nemani ,  Young S. Lee ,  Marlon Menezes ,  Christopher Dennis Bencher ,  Vijay Parihar

    IPC分类号： H01L21/00

    CPC分类号： H01L21/268 ,  H01L21/26513

    摘要： Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.

    摘要翻译： 公开了用于激活掺杂半导体衬底中的掺杂剂的方法。 碳前体流入其中设置掺杂半导体衬底的衬底处理室。 在基板处理室中由碳前体形成等离子体。 用等离子体沉积在衬底上的碳膜。 在沉积低于500℃的碳膜的同时保持基板的温度。沉积的碳膜暴露于电磁辐射小于10ms的时间段，并且在电磁波包括的波长处具有大于0.3的消光系数 辐射。

    Silicon oxide gapfill deposition using liquid precursors
    2.
    发明授权
    Silicon oxide gapfill deposition using liquid precursors 失效
    使用液体前体的氧化硅间隙填充沉积

    公开(公告)号：US07087536B2

    公开(公告)日：2006-08-08

    申请号：US10931742

    申请日：2004-09-01

    申请人： Srinivas D. Nemani ,  Young S. Lee

    发明人： Srinivas D. Nemani ,  Young S. Lee

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02164 ,  C23C16/401 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/0234

    摘要： A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is vaporized. A flow of the vaporized liquid Si—C—O—H precursor is provided to the substrate processing chamber. A gaseous oxidizer is also flowed to the substrate processing chamber. A deposition plasma is generated inductively from the precursor and the oxidizer in the substrate processing chamber, and the silicon oxide film is deposited over the substrate and within the gap with the deposition plasma.

    摘要翻译： 在设置在基板处理室中的基板上沉积氧化硅膜。 基板在相邻的凸起表面之间形成间隙。 液体Si-C-O-H前体蒸发。 蒸发的液体Si-C-O-H前体的流动被提供到基底处理室。 气态氧化剂也流到衬底处理室。 从衬底处理室中的前体和氧化剂感应地产生沉积等离子体，并且氧化硅膜沉积在衬底上并且与沉积等离子体在间隙内沉积。

    Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
    3.
    发明授权
    Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD 失效
    集成过程调制（IPM）是HDP-CVD填缝的新解决方案

    公开(公告)号：US07524750B2

    公开(公告)日：2009-04-28

    申请号：US11553772

    申请日：2006-10-27

    申请人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

    发明人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

    IPC分类号： H01L21/20

    CPC分类号： H01L21/76224

    摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

    摘要翻译： 提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。 包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。 从处理气体形成具有至少1011个离子/ cm 3的离子密度的等离子体。 氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。 使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。 卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

    INTEGRATED PROCESS MODULATION (IPM) A NOVEL SOLUTION FOR GAPFILL WITH HDP-CVD
    4.
    发明申请
    INTEGRATED PROCESS MODULATION (IPM) A NOVEL SOLUTION FOR GAPFILL WITH HDP-CVD 失效
    集成过程调制（IPM）用于HDP-CVD的GAPFILL的新颖解决方案

    公开(公告)号：US20070243693A1

    公开(公告)日：2007-10-18

    申请号：US11553772

    申请日：2006-10-27

    申请人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

    发明人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76224

    摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

    摘要翻译： 提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。 包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。 从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。 氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。 使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。 卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

    INFORMATION PROCESSING
    6.
    发明申请
    INFORMATION PROCESSING 审中-公开
    信息处理

    公开(公告)号：US20130290892A1

    公开(公告)日：2013-10-31

    申请号：US13457524

    申请日：2012-04-27

    申请人： Santosh S. Basapur ,  Shirley A. Chaysinh ,  Young S. Lee ,  Hiren M. Mandalia ,  Ashley B. Novak ,  Narayanan Venkitaraman

    发明人： Santosh S. Basapur ,  Shirley A. Chaysinh ,  Young S. Lee ,  Hiren M. Mandalia ,  Ashley B. Novak ,  Narayanan Venkitaraman

    IPC分类号： G06F3/048

    CPC分类号： G06F17/30064 ,  G11B27/34 ,  G11B2220/2537 ,  H04N21/4316 ,  H04N21/4722 ,  H04N21/478 ,  H04N21/4882 ,  H04N21/854

    摘要： Disclosed are methods and apparatus for displaying a plurality of presentation elements to a user. A progress bar is displayed. A length of the progress bar is representative of a duration of a multimedia presentation. A communication box is also displayed. The communication box comprises a marker and a communication composed by an originator in relation to a certain point or time period within the multimedia presentation. The progress bar and the communication box are displayed such that the marker is in alignment with a position along the length of the progress bar that corresponds to the point or time period in the multimedia presentation in relation to which the communication was composed. The marker may be moved relative to the progress bar.

    摘要翻译： 公开了用于向用户显示多个呈现元素的方法和装置。 显示进度条。 进度条的长度代表多媒体呈现的持续时间。 还显示一个通讯箱。 通信盒包括与多媒体呈现中的特定点或时间段相关的标记和由发起者组成的通信。 显示进度条和通信盒，使得标记与沿着进度条的长度对应于与组成通信的多媒体呈现中的点或时间段对应的位置对准。 标记可以相对于进度条移动。

    HIGH DENSITY PLASMA GAPFILL DEPOSITION-ETCH-DEPOSITION PROCESS USING FLUOROCARBON ETCHANT
    9.
    发明申请
    HIGH DENSITY PLASMA GAPFILL DEPOSITION-ETCH-DEPOSITION PROCESS USING FLUOROCARBON ETCHANT 失效
    使用荧光探针的高密度等离子体吸附沉积 - 沉积沉积工艺

    公开(公告)号：US20100041207A1

    公开(公告)日：2010-02-18

    申请号：US12193162

    申请日：2008-08-18

    申请人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

    发明人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76224 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

    摘要： A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.

    摘要翻译： 将介电膜沉积在设置在基板处理室中的基板上的相邻凸起结构之间的间隙中的高密度等离子体蚀刻/蚀刻/蚀刻方法。 该方法通过从流入处理室的第一气体混合物形成高密度等离子体，将电介质膜的第一部分沉积在间隙内，通过流过包含CxFy的蚀刻剂气体来蚀刻沉积的电介质膜的第一部分， 的x至y大于或等于1：2，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将第二部分电介质膜沉积在第一部分上。

    Gapfill using deposition-etch sequence
    10.
    发明授权
    Gapfill using deposition-etch sequence 有权
    Gapfill使用沉积蚀刻序列

    公开(公告)号：US07329586B2

    公开(公告)日：2008-02-12

    申请号：US11166357

    申请日：2005-06-24

    申请人： Manoj Vellaikal ,  Hemant P. Mungekar ,  Young S. Lee ,  Yasutoshi Okuno ,  Hiroshi Yuasa

    发明人： Manoj Vellaikal ,  Hemant P. Mungekar ,  Young S. Lee ,  Yasutoshi Okuno ,  Hiroshi Yuasa

    IPC分类号： H01L21/76

    CPC分类号： H01L21/31612 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274

    摘要： Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.

    摘要翻译： 方法在设置在基板处理室中的基板上沉积膜。 基板在相邻的凸起表面之间形成间隙。 将第一前体沉积气体的流动提供给基板处理室。 由第一沉积气体流形成第一高密度等离子体，以在第一沉积工艺和第二沉积工艺之后，在第一沉积工艺之后在膜上沉积薄膜的第一部分，直到间隙闭合为止。 将膜的第一部分的足够部分回蚀刻以重新打开间隙。 向基板处理室提供第二前体沉积气体的流动。 第二高密度等离子体由第二前体沉积气体的流形成，以便在具有同时沉积和溅射部件的第二沉积工艺的基础上沉积薄膜的第二部分并且在重新打开的间隙内。