公开(公告)号：US07638253B2

公开(公告)日：2009-12-29

申请号：US12082436

申请日：2008-04-11

申请人： Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

发明人： Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

IPC分类号： G03F7/004 ,  G03F7/023 ,  G03F7/30

CPC分类号： G03F7/0382 ,  H01L21/312 ,  H01L27/1214 ,  H01L27/1288

摘要： In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Chemical Formula 2, about 0.5 to about 10 parts by weight of a photo-acid generator, about 1 to about 20 parts by weight of a cross-linker and about 10 to about 200 parts by weight of a solvent. The photoresist composition may improve the heat resistance and adhesion ability of a photoresist pattern. wherein R1 and R2 independently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number.

摘要翻译： 在一个实例中，光致抗蚀剂组合物包括约1至约70重量份的第一粘合剂树脂，其包含由以下化学式1表示的重复单元，约1至约70重量份的第二粘合剂树脂，其包含重复单元 由以下化学式2表示，约0.5至约10重量份的光酸产生剂，约1至约20重量份的交联剂和约10至约200重量份的溶剂。 光致抗蚀剂组合物可以提高光致抗蚀剂图案的耐热性和粘附能力。 其中R1和R2独立地表示具有1至5个碳原子的烷基，n和m独立地表示自然数。

公开(公告)号：US20080254634A1

公开(公告)日：2008-10-16

申请号：US12082436

申请日：2008-04-11

申请人： Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

发明人： Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

IPC分类号： H01L21/311 ,  G03F7/004

CPC分类号： G03F7/0382 ,  H01L21/312 ,  H01L27/1214 ,  H01L27/1288

摘要： In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Chemical Formula 2, about 0.5 to about 10 parts by weight of a photo-acid generator, about 1 to about 20 parts by weight of a cross-linker and about 10 to about 200 parts by weight of a solvent. The photoresist composition may improve the heat resistance and adhesion ability of a photoresist pattern. wherein R1 and R2 independently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number.

摘要翻译： 在一个实例中，光致抗蚀剂组合物包括约1至约70重量份的第一粘合剂树脂，其包含由以下化学式1表示的重复单元，约1至约70重量份的第二粘合剂树脂，其包含重复单元 由以下化学式2表示，约0.5至约10重量份的光酸产生剂，约1至约20重量份的交联剂和约10至约200重量份的溶剂。 光致抗蚀剂组合物可以提高光致抗蚀剂图案的耐热性和粘附能力。 其中R 1和R 2独立地表示具有1至5个碳原子的烷基，n和m独立地表示自然数。

公开(公告)号：US07595143B2

公开(公告)日：2009-09-29

申请号：US11508079

申请日：2006-08-22

申请人： Jeong-Min Park ,  Hi-Kuk Lee ,  Hyoc-Min Youn ,  Ki-Hyuk Koo ,  Byung-Uk Kim

发明人： Jeong-Min Park ,  Hi-Kuk Lee ,  Hyoc-Min Youn ,  Ki-Hyuk Koo ,  Byung-Uk Kim

IPC分类号： G03F7/00 ,  G03F7/004

CPC分类号： G03F7/0382 ,  G03F7/105 ,  H01L21/32139 ,  H01L29/66765 ,  H01L29/78669 ,  Y10S430/106 ,  Y10S430/114

摘要： A photoresist composition includes about 10 to about 70% by weight of a binder resin including a phenol-based polymer, about 0.5 to about 10% by weight of a photo-acid generator, about 1 to about 20% by weight of a cross-linker, about 0.1 to about 5% by weight of a dye and about 10 to about 80% by weight of a solvent. The photoresist composition may be applied to, for example, a method of manufacturing a TFT substrate.

摘要翻译： 光致抗蚀剂组合物包括约10至约70重量％的包含酚类聚合物的粘合剂树脂，约0.5至约10重量％的光酸产生剂，约1至约20重量％的交联剂， 接头，约0.1至约5重量％的染料和约10至约80重量％的溶剂。 光致抗蚀剂组合物可以应用于例如制造TFT基板的方法。

公开(公告)号：US20070048662A1

公开(公告)日：2007-03-01

申请号：US11508079

申请日：2006-08-22

申请人： Jeong-Min Park ,  Hi-Kuk Lee ,  Hyoc-Min Youn ,  Ki-Hyuk Koo ,  Byung-Uk Kim

发明人： Jeong-Min Park ,  Hi-Kuk Lee ,  Hyoc-Min Youn ,  Ki-Hyuk Koo ,  Byung-Uk Kim

IPC分类号： G03C1/00

CPC分类号： G03F7/0382 ,  G03F7/105 ,  H01L21/32139 ,  H01L29/66765 ,  H01L29/78669 ,  Y10S430/106 ,  Y10S430/114

摘要： A photoresist composition includes about 10 to about 70% by weight of a binder resin including a phenol-based polymer, about 0.5 to about 10% by weight of a photo-acid generator, about 1 to about 20% by weight of a cross-linker, about 0.1 to about 5% by weight of a dye and about 10 to about 80% by weight of a solvent. The photoresist composition may be applied to, for example, a method of manufacturing a TFT substrate.

摘要翻译： 光致抗蚀剂组合物包括约10至约70重量％的包含酚类聚合物的粘合剂树脂，约0.5至约10重量％的光酸产生剂，约1至约20重量％的交联剂， 接头，约0.1至约5重量％的染料和约10至约80重量％的溶剂。 光致抗蚀剂组合物可以应用于例如制造TFT基板的方法。

公开(公告)号：US07989136B2

公开(公告)日：2011-08-02

申请号：US12059113

申请日：2008-03-31

申请人： Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Hyoc-Min Yoon ,  Ki-Hyuk Koo

发明人： Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Hyoc-Min Yoon ,  Ki-Hyuk Koo

IPC分类号： G03F7/028 ,  G03F7/038

CPC分类号： G03F7/038 ,  Y10S430/121 ,  Y10S430/123 ,  Y10S430/128

摘要： A photoresist composition comprises about 0.5 to about 20 parts by weight of a photo-acid generator, about 10 to about 70 parts by weight of a novolac resin containing a hydroxyl group, about 1 to about 40 parts by weight of a cross-linker that comprises an alkoxymethylmelamine compound, and about 10 to about 150 parts by weight of a solvent.

摘要翻译： 光致抗蚀剂组合物包含约0.5至约20重量份的光酸发生剂，约10至约70重量份的含有羟基的酚醛清漆树脂，约1至约40重量份的交联剂， 包括烷氧基甲基蜜胺化合物和约10至约150重量份的溶剂。

公开(公告)号：US20100203449A1

公开(公告)日：2010-08-12

申请号：US12685545

申请日：2010-01-11

申请人： Yeong-Beom Lee ,  Hi-Kuk Lee ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

发明人： Yeong-Beom Lee ,  Hi-Kuk Lee ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： H01L27/1288 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/40 ,  H01L27/1214

摘要： A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent:

摘要翻译： 提供了制造其中使用的薄膜晶体管基板和负型光致抗蚀剂组合物的方法，其可以降低图案劣化。 制造薄膜晶体管基板的方法包括在基板上形成由导电材料构成的导电膜，在导电膜上形成由负性光致抗蚀剂组合物构成的蚀刻图案，并使用该导电膜蚀刻导电膜形成导电图案 蚀刻图案作为蚀刻掩模，其中负性光致抗蚀剂组合物包含10-50重量份的包含可溶于碱显影液的羟基的酚醛清漆树脂，0.5-10重量份由 按照下式（1），将0.5-10重量份由下式（2）表示的第二光酸反应产物，1-20重量份的交联剂和10-90重量份的溶剂 ：

公开(公告)号：US08257905B2

公开(公告)日：2012-09-04

申请号：US12685545

申请日：2010-01-11

申请人： Yeong-Beom Lee ,  Hi-Kuk Lee ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

发明人： Yeong-Beom Lee ,  Hi-Kuk Lee ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： H01L27/1288 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/40 ,  H01L27/1214

摘要： A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent:

摘要翻译： 提供了制造其中使用的薄膜晶体管基板和负型光致抗蚀剂组合物的方法，其可以降低图案劣化。 制造薄膜晶体管基板的方法包括在基板上形成由导电材料构成的导电膜，在导电膜上形成由负性光致抗蚀剂组合物构成的蚀刻图案，并使用该导电膜蚀刻导电膜形成导电图案 蚀刻图案作为蚀刻掩模，其中负性光致抗蚀剂组合物包含10-50重量份的包含可溶于碱显影液的羟基的酚醛清漆树脂，0.5-10重量份由 按照下式（1），将0.5-10重量份由下式（2）表示的第二光酸反应产物，1-20重量份的交联剂和10-90重量份的溶剂 ：

公开(公告)号：US20060275700A1

公开(公告)日：2006-12-07

申请号：US11445846

申请日：2006-06-02

申请人： Hi-Kuk Lee ,  Dong-Ki Lee ,  Jae-Sung Kim ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo ,  Joo-Pyo Yun ,  Sang-Gak Choi

发明人： Hi-Kuk Lee ,  Dong-Ki Lee ,  Jae-Sung Kim ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo ,  Joo-Pyo Yun ,  Sang-Gak Choi

IPC分类号： G03C1/00

CPC分类号： G03F7/0233 ,  G02F1/133707 ,  G02F1/133711 ,  G03F7/40

摘要： A photosensitive resin composition for an organic layer pattern includes about 100 parts by weight of an acryl-based copolymer and about 5 to about 100 parts by weight of a 1,2-quinonediazide compound. The acryl-based copolymer is prepared by copolymerizing about 5 to about 60 percent by weight of an isobonyl carboxylate-based compound based on a total weight of the acryl-based copolymer, about 10 to about 30 percent by weight of an unsaturated compound carrying an epoxy group, about 20 to about 40 percent by weight of an olefin-based unsaturated compound, and about 10 to about 40 percent by weight of one selected from unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, and a mixture thereof. Methods of manufacturing a TFT substrate and a common electrode substrate using the photosensitive resin composition are also provided. Advantageously, the organic layer pattern may have a mountain structure having an improved local flatness without concave and convex structures.

摘要翻译： 用于有机层图案的感光性树脂组合物包括约100重量份的丙烯酸类共聚物和约5至约100重量份的1,2-醌二叠氮化合物。 基于丙烯酸类的共聚物通过基于丙烯酸类共聚物的总重量共聚约5至约60重量％的基于羧酸异冰片的化合物来制备，约10至约30重量％的不饱和化合物携带 约20至约40重量％的烯烃基不饱和化合物，和约10至约40重量％的选自不饱和羧酸，不饱和羧酸酐及其混合物的一种。 还提供了使用该感光性树脂组合物制造TFT基板和公共电极基板的方法。 有利地，有机层图案可以具有具有改进的局部平坦度而没有凹凸结构的山体结构。

公开(公告)号：US07799509B2

公开(公告)日：2010-09-21

申请号：US11445846

申请日：2006-06-02

申请人： Hi-Kuk Lee ,  Dong-Ki Lee ,  Jae-Sung Kim ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo ,  Joo-Pyo Yun ,  Sang-Gak Choi

发明人： Hi-Kuk Lee ,  Dong-Ki Lee ,  Jae-Sung Kim ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo ,  Joo-Pyo Yun ,  Sang-Gak Choi

IPC分类号： G03F7/30 ,  G03F7/023

CPC分类号： G03F7/0233 ,  G02F1/133707 ,  G02F1/133711 ,  G03F7/40

摘要： A photosensitive resin composition for an organic layer pattern includes about 100 parts by weight of an acryl-based copolymer and about 5 to about 100 parts by weight of a 1,2-quinonediazide compound. The acryl-based copolymer is prepared by copolymerizing about 5 to about 60 percent by weight of an isobonyl carboxylate-based compound based on a total weight of the acryl-based copolymer, about 10 to about 30 percent by weight of an unsaturated compound carrying an epoxy group, about 20 to about 40 percent by weight of an olefin-based unsaturated compound, and about 10 to about 40 percent by weight of one selected from unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, and a mixture thereof. Methods of manufacturing a TFT substrate and a common electrode substrate using the photosensitive resin composition are also provided. Advantageously, the organic layer pattern may have a mountain structure having an improved local flatness without concave and convex structures.

摘要翻译： 用于有机层图案的感光性树脂组合物包括约100重量份的丙烯酸类共聚物和约5至约100重量份的1,2-醌二叠氮化合物。 基于丙烯酸类的共聚物通过基于丙烯酸类共聚物的总重量共聚约5至约60重量％的基于羧酸异冰片的化合物来制备，约10至约30重量％的不饱和化合物携带 约20至约40重量％的烯烃基不饱和化合物，和约10至约40重量％的选自不饱和羧酸，不饱和羧酸酐及其混合物的一种。 还提供了使用该感光性树脂组合物制造TFT基板和公共电极基板的方法。 有利地，有机层图案可以具有具有改进的局部平坦度而没有凹凸结构的山体结构。

公开(公告)号：US20110294243A1

公开(公告)日：2011-12-01

申请号：US13092629

申请日：2011-04-22

申请人： Woo-Seok Jeon ,  Jeong-Min Park ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo ,  Su-Youn Choi ,  Jin-Sun Kim

发明人： Woo-Seok Jeon ,  Jeong-Min Park ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo ,  Su-Youn Choi ,  Jin-Sun Kim

IPC分类号： H01L33/08 ,  G03F7/20 ,  G03F7/004

CPC分类号： G03F7/0007 ,  G02F1/13439 ,  G03F7/0236 ,  G03F7/0382

摘要： A photoresist composition suitable for forming a high-resolution pattern, and a method of forming a photoresist pattern using the same. The photoresist composition includes about 10 to about 45 parts by weight of an alkali soluble binder resin including a hydroxyl group, about 0.1 to about 5 parts by weight of a photo-acid generator, about 1 to about 5 parts by weight of a cross-linker that cross-links the alkali-soluble binder resin including the hydroxyl group, about 0.3 to about 3 parts by weight of a quinone diazide compound, and a remainder of a solvent.

摘要翻译： 适合于形成高分辨率图案的光致抗蚀剂组合物和使用其形成光致抗蚀剂图案的方法。 光致抗蚀剂组合物包括约10至约45重量份的包含羟基的碱溶性粘合剂树脂，约0.1至约5重量份的光酸发生剂，约1至约5重量份的交联剂， 使包含羟基的碱溶性粘合剂树脂交联的接头，约0.3至约3重量份的醌二叠氮化合物和剩余的溶剂。