公开(公告)号：US07655959B2

公开(公告)日：2010-02-02

申请号：US11293273

申请日：2005-12-05

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

公开(公告)号：US20070145386A1

公开(公告)日：2007-06-28

申请号：US11705736

申请日：2007-02-14

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

摘要翻译： 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US07759140B2

公开(公告)日：2010-07-20

申请号：US11450389

申请日：2006-06-12

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01L33/22

摘要： Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

摘要翻译： 提供了一种发光器件及其制造方法。 发光装置包括具有至少一个具有弯曲表面的突出部分的基板，其中即使当半导体晶体层的生长和发光装置的形成是均匀的时，也可获得一致的缺陷密度和均匀的应力分布 完成 此外，发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

公开(公告)号：US20060226431A1

公开(公告)日：2006-10-12

申请号：US11450389

申请日：2006-06-12

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/22

摘要： Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

摘要翻译： 提供了一种发光器件及其制造方法。 发光装置包括具有至少一个具有弯曲表面的突出部分的基板，其中即使当半导体晶体层的生长和发光装置的形成是均匀的时，也可以获得一致的缺陷密度和均匀的应力分布 完成 此外，发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

公开(公告)号：US20060118802A1

公开(公告)日：2006-06-08

申请号：US11293273

申请日：2005-12-05

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

公开(公告)号：US07935554B2

公开(公告)日：2011-05-03

申请号：US12407361

申请日：2009-03-19

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

IPC分类号： H01L21/302

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

摘要翻译： 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US08114691B2

公开(公告)日：2012-02-14

申请号：US12630880

申请日：2009-12-04

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

公开(公告)号：US20070183466A1

公开(公告)日：2007-08-09

申请号：US11513224

申请日：2006-08-31

申请人： Joong-kon Son ,  Jeong-wook Lee ,  Ho-sun Paek ,  Sung-nam Lee ,  Tan Sakong

发明人： Joong-kon Son ,  Jeong-wook Lee ,  Ho-sun Paek ,  Sung-nam Lee ,  Tan Sakong

IPC分类号： H01S3/10 ,  H01S3/00

CPC分类号： H04N9/3129

摘要： A laser display device is provided which includes: a light source emitting at least one laser beam; a light modulation unit for modulating the laser beam emitted from the light source according to an image signal; a scanning unit scanning the laser beam modulated in the light modulation unit in a main scanning direction and in a sub-scanning direction; and an image unit in which an image is formed having a phosphor layer in which excitation light is generated by a laser beam scanned by the scanning unit.

摘要翻译： 提供了一种激光显示装置，其包括：发射至少一个激光束的光源; 光调制单元，用于根据图像信号调制从光源发射的激光束; 扫描单元沿主扫描方向和副扫描方向扫描在调光单元中调制的激光束; 以及其中形成有图像的图像单元，其具有通过由扫描单元扫描的激光束产生激发光的荧光体层。

公开(公告)号：US07642561B2

公开(公告)日：2010-01-05

申请号：US11294403

申请日：2005-12-06

申请人： Jeong-wook Lee ,  Youn-joon Sung

发明人： Jeong-wook Lee ,  Youn-joon Sung

IPC分类号： H01L29/22

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/12

摘要： Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.

摘要翻译： 提供了一种在基板上形成纹理结构的半导体发光二极管。 在制造半导体发光二极管的方法中，在基板上形成金属层，通过阳极氧化金属层形成具有孔的金属氧化物层。 金属氧化物层本身可以用作纹理结构图案，或者纹理结构图案可以通过在基板中形成孔或在对应于金属氧化物层的孔的金属氧化物层下面的材料层来形成。 通过在纹理结构图案上依次形成第一半导体层，有源层和第二半导体层来完成半导体发光二极管的制造。

公开(公告)号：US20060118803A1

公开(公告)日：2006-06-08

申请号：US11294403

申请日：2005-12-06

申请人： Jeong-wook Lee ,  Youn-joon Sung

发明人： Jeong-wook Lee ,  Youn-joon Sung

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/12

摘要： Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.

摘要翻译： 提供了一种在基板上形成纹理结构的半导体发光二极管。 在制造半导体发光二极管的方法中，在基板上形成金属层，通过阳极氧化金属层形成具有孔的金属氧化物层。 金属氧化物层本身可以用作纹理结构图案，或者纹理结构图案可以通过在基板中形成孔或在对应于金属氧化物层的孔的金属氧化物层下面的材料层来形成。 通过在纹理结构图案上依次形成第一半导体层，有源层和第二半导体层来完成半导体发光二极管的制造。