公开(公告)号：US07935554B2

公开(公告)日：2011-05-03

申请号：US12407361

申请日：2009-03-19

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

IPC分类号： H01L21/302

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

摘要翻译： 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US08114691B2

公开(公告)日：2012-02-14

申请号：US12630880

申请日：2009-12-04

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

公开(公告)号：US07759140B2

公开(公告)日：2010-07-20

申请号：US11450389

申请日：2006-06-12

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01L33/22

摘要： Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

摘要翻译： 提供了一种发光器件及其制造方法。 发光装置包括具有至少一个具有弯曲表面的突出部分的基板，其中即使当半导体晶体层的生长和发光装置的形成是均匀的时，也可获得一致的缺陷密度和均匀的应力分布 完成 此外，发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

公开(公告)号：US20100081221A1

公开(公告)日：2010-04-01

申请号：US12630880

申请日：2009-12-04

申请人： Jeong-wook LEE ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Jeong-wook LEE ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

公开(公告)号：US20060226431A1

公开(公告)日：2006-10-12

申请号：US11450389

申请日：2006-06-12

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/22

摘要： Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

摘要翻译： 提供了一种发光器件及其制造方法。 发光装置包括具有至少一个具有弯曲表面的突出部分的基板，其中即使当半导体晶体层的生长和发光装置的形成是均匀的时，也可以获得一致的缺陷密度和均匀的应力分布 完成 此外，发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

公开(公告)号：US20060118802A1

公开(公告)日：2006-06-08

申请号：US11293273

申请日：2005-12-05

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

公开(公告)号：US07655959B2

公开(公告)日：2010-02-02

申请号：US11293273

申请日：2005-12-05

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

公开(公告)号：US20070145386A1

公开(公告)日：2007-06-28

申请号：US11705736

申请日：2007-02-14

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

摘要翻译： 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US08129260B2

公开(公告)日：2012-03-06

申请号：US11802667

申请日：2007-05-24

申请人： Ho-sun Paek ,  Youn-joon Sung ,  Kyoung-ho Ha ,  Joong-kon Son ,  Sung-nam Lee

发明人： Ho-sun Paek ,  Youn-joon Sung ,  Kyoung-ho Ha ,  Joong-kon Son ,  Sung-nam Lee

IPC分类号： H01L23/58

CPC分类号： H01L21/02647 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02469 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02609 ,  H01L21/02642 ,  H01L21/02645

摘要： A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.

摘要翻译： 半导体衬底包括第一半导体层和第二半导体层。 第一半导体层由II-VI族半导体材料，III-V族半导体材料或II-VI族半导体材料和III-V族半导体材料形成。 在第一半导体层中形成至少一个非晶区域和至少一个晶体区域。 第二半导体层形成在第一半导体层上并且从至少一个晶体区域晶体生长。 制造半导体衬底的方法包括制备生长衬底; 在生长衬底上晶体生长第一半导体层; 在所述第一半导体层中形成所述至少一个非晶区和所述至少一个晶体区; 以及使用所述至少一个非晶区域作为掩模和所述至少一个晶体区域作为种子在所述第一半导体层上形成第二半导体层。

公开(公告)号：US07632742B2

公开(公告)日：2009-12-15

申请号：US11650981

申请日：2007-01-09

申请人： Ho-sun Paek ,  Tae-hoon Jang ,  Youn-joon Sung ,  Tan Sakong ,  Min-ho Yang

发明人： Ho-sun Paek ,  Tae-hoon Jang ,  Youn-joon Sung ,  Tan Sakong ,  Min-ho Yang

IPC分类号： H01L21/20

CPC分类号： C30B7/005 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

摘要： A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.

摘要翻译： 提供了一种外延生长衬底及其制造方法。 骨架外延生长衬底包括衬底，在第一方向上形成在衬底上的用于Pendeo-外延生长的多个图案区域，以及至少一个溶液阻挡层，其与多个图案区域接触并在第二个衬底上形成 从而防止由于空气间隙而导致的半导体器件的污染，并且在Pendeo-外延生长工艺期间减少半导体器件的缺陷百分比。