Light-emitting device and method of manufacturing the same
    1.
    发明授权
    Light-emitting device and method of manufacturing the same 有权
    发光装置及其制造方法

    公开(公告)号:US07759140B2

    公开(公告)日:2010-07-20

    申请号:US11450389

    申请日:2006-06-12

    IPC分类号: H01L21/00

    CPC分类号: H01L33/12 H01L33/22

    摘要: Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

    摘要翻译: 提供了一种发光器件及其制造方法。 发光装置包括具有至少一个具有弯曲表面的突出部分的基板,其中即使当半导体晶体层的生长和发光装置的形成是均匀的时,也可获得一致的缺陷密度和均匀的应力分布 完成 此外,发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

    Light-emitting device and method of manufacturing the same
    2.
    发明申请
    Light-emitting device and method of manufacturing the same 有权
    发光装置及其制造方法

    公开(公告)号:US20060226431A1

    公开(公告)日:2006-10-12

    申请号:US11450389

    申请日:2006-06-12

    IPC分类号: H01L33/00

    CPC分类号: H01L33/12 H01L33/22

    摘要: Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

    摘要翻译: 提供了一种发光器件及其制造方法。 发光装置包括具有至少一个具有弯曲表面的突出部分的基板,其中即使当半导体晶体层的生长和发光装置的形成是均匀的时,也可以获得一致的缺陷密度和均匀的应力分布 完成 此外,发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

    Monolithic white light emitting device
    3.
    发明授权
    Monolithic white light emitting device 有权
    单片白光发光装置

    公开(公告)号:US07098482B2

    公开(公告)日:2006-08-29

    申请号:US11071223

    申请日:2005-03-04

    IPC分类号: H01L27/15

    摘要: A monolithic white light emitting device is provided. An active layer in the monolithic white light emitting device is doped with silicon or rare earth metal that forms a sub-band. The number of active layers included in the monolithic white light emitting device is one or two. When two active layers are included in the monolithic white light emitting device, a cladding layer is interposed between the two active layers. According to this light emission structure, white light can be emitted by a semiconductor, so a phosphor is not necessary. The monolithic white light emitting device is easily manufactured at a low cost and applied to a wide range of fields compared with a conventional white light emitting device that needs a help of a phosphor.

    摘要翻译: 提供了一种单片白光发光装置。 在单片白色发光器件中的有源层掺杂有形成子带的硅或稀土金属。 包含在单片白色发光器件中的有源层的数量是一个或两个。 当双层白色发光器件中包含两个有源层时,在两个有源层之间插入包层。 根据该发光结构,可以通过半导体发出白色的光,因此不需要荧光体。 与需要荧光体的帮助的传统的白色发光器件相比,单片白色发光器件以低成本容易地制造并应用于广泛的领域。

    Monolithic white light emitting device
    4.
    发明申请
    Monolithic white light emitting device 有权
    单片白光发光装置

    公开(公告)号:US20050199892A1

    公开(公告)日:2005-09-15

    申请号:US11071223

    申请日:2005-03-04

    摘要: A monolithic white light emitting device is provided. An active layer in the monolithic white light emitting device is doped with silicon or rare earth metal that forms a sub-band. The number of active layers included in the monolithic white light emitting device is one or two. When two active layers are included in the monolithic white light emitting device, a cladding layer is interposed between the two active layers. According to this light emission structure, white light can be emitted by a semiconductor, so a phosphor is not necessary. The monolithic white light emitting device is easily manufactured at a low cost and applied to a wide range of fields compared with a conventional white light emitting device that needs a help of a phosphor.

    摘要翻译: 提供了一种单片白光发光装置。 在单片白色发光器件中的有源层掺杂有形成子带的硅或稀土金属。 包含在单片白色发光器件中的有源层的数量是一个或两个。 当双层白色发光器件中包含两个有源层时,在两个有源层之间插入包层。 根据该发光结构,可以通过半导体发出白色的光,因此不需要荧光体。 与需要荧光体的帮助的传统的白色发光器件相比,单片白色发光器件以低成本容易地制造并应用于广泛的领域。

    Light emitting diode and method for fabricating the same
    5.
    发明授权
    Light emitting diode and method for fabricating the same 有权
    发光二极管及其制造方法

    公开(公告)号:US08952389B2

    公开(公告)日:2015-02-10

    申请号:US13471154

    申请日:2012-05-14

    IPC分类号: H01L33/40 H01L33/50 H01L33/20

    摘要: A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

    摘要翻译: 提供一种发光二极管及其制造方法。 发光二极管包括:透明基板; 半导体材料层,形成在具有产生光的有源层的基板的顶表面上; 以及在受控变化的厚度的基板的背面上形成的荧光层。 可以通过调节荧光层的厚度来控制波长在荧光层中传播的光与在有源层中产生的原始光的比例,从发光二极管发出期望的均匀白光。

    Light emitting device and method of manufacturing the same
    6.
    发明授权
    Light emitting device and method of manufacturing the same 失效
    发光元件及其制造方法

    公开(公告)号:US08435813B2

    公开(公告)日:2013-05-07

    申请号:US13438323

    申请日:2012-04-03

    IPC分类号: H01L21/00

    CPC分类号: H01L33/405 H01L33/32

    摘要: Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

    摘要翻译: 提供一种发光器件及其制造方法。 发光器件包括透明衬底,在透明衬底上形成的n型化合物半导体层,顺序地形成在n型化合物半导体层的第一区域上的有源层,p型化合物半导体层和p型电极, 和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极,其中p型电极包括第一和第二电极,每个电极具有不同的电阻和反射率。

    Method of forming fine pattern using azobenzene-functionalized polymer and method of manufacturing nitride-based semiconductor light emitting device using the method of forming fine pattern
    8.
    发明授权
    Method of forming fine pattern using azobenzene-functionalized polymer and method of manufacturing nitride-based semiconductor light emitting device using the method of forming fine pattern 失效
    使用偶氮苯官能化聚合物形成精细图案的方法和使用形成精细图案的方法制造氮化物基半导体发光器件的方法

    公开(公告)号:US07943290B2

    公开(公告)日:2011-05-17

    申请号:US11683096

    申请日:2007-03-07

    IPC分类号: G03F7/26

    摘要: Provided is a method of forming a fine pattern having a pattern dimension of 1 μm or less, repeatedly with reproducibility. The method of forming the fine pattern includes: forming an azobenzene-functionalized polymer film on an etched layer; irradiating the azobenzene-functionalized polymer film using an interference laser beam to form a patterned azobenzene-functionalized polymer film having fine-patterned surface relief gratings by a photophysical mass transporting of the azobenzene-functionalized polymer; etching the etched layer using the azobenzene-functionalized polymer film having the surface relief grating patterns as an etching mask; and removing the patterned azobenzene-functionalized polymer film.

    摘要翻译: 提供一种以重复性重复地形成图案尺寸为1μm以下的精细图案的方法。 形成微细图案的方法包括:在蚀刻层上形成偶氮苯官能化聚合物膜; 使用干涉激光束照射偶氮苯官能化的聚合物膜,通过偶氮苯官能化聚合物的光物理传输形成具有精细图案化表面起伏光栅的图案化偶氮苯官能化聚合物膜; 使用具有表面起弧光栅图案的偶氮苯官能化聚合物膜作为蚀刻掩模蚀刻蚀刻层; 并除去图案化的偶氮苯官能化聚合物膜。

    Led module and method of manufacturing the same
    9.
    发明申请
    Led module and method of manufacturing the same 审中-公开
    LED模块及其制造方法

    公开(公告)号:US20090278154A1

    公开(公告)日:2009-11-12

    申请号:US12458581

    申请日:2009-07-16

    IPC分类号: H01L33/00

    摘要: Provided are a light emitting diode (LED) module and a method of manufacturing the same. The LED module may include a package housing including an inner space, a light-emitting chip in the inner space of the package housing, a phosphor layer including a fluorescent material and converting light emitted from the light-emitting chip to light having a longer wavelength than that of the light emitted from the light-emitting chip. The concentration of the fluorescent material of the phosphor layer may be inhomogeneous. The method of manufacturing the LED module may include providing or forming a package housing having an inner space and including a light-emitting chip in the inner space, measuring a radiation pattern of light emitted from the light-emitting chip, and forming a phosphor layer including a fluorescent material on the light-emitting chip and having characteristics that may be determined according to the radiation pattern.

    摘要翻译: 提供了一种发光二极管(LED)模块及其制造方法。 LED模块可以包括包括内部空间的封装壳体,在封装壳体的内部空间中的发光芯片,包括荧光材料的荧光体层,将从发光芯片发射的光转换成具有较长波长的光 比从发光芯片发出的光的强度高。 荧光体层的荧光材料的浓度可能不均匀。 制造LED模块的方法可以包括提供或形成具有内部空间并且在内部空间中包括发光芯片的封装壳体,测量从发光芯片发射的光的辐射图案,以及形成荧光体层 包括在发光芯片上的荧光材料,并且具有可以根据辐射图案确定的特性。

    Light emitting diodes and display apparatuses using the same
    10.
    发明授权
    Light emitting diodes and display apparatuses using the same 有权
    发光二极管及使用其的显示装置

    公开(公告)号:US07560746B2

    公开(公告)日:2009-07-14

    申请号:US11711877

    申请日:2007-02-28

    IPC分类号: H01L33/00

    摘要: In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.

    摘要翻译: 在发光二极管中,第一半导体层供应电子,第二半导体层提供空穴。 在第一和第二半导体层之间形成有源层。 有源层接收电子和空穴,并且响应于电子和孔之间的耦合而发光。 第一反射层形成在第一半导体层的底部,第二反射层形成在第二半导体层的顶部。 从有源层发射的光朝向有源层的一侧离开。