Method for forming self-aligned channel implants using a gate poly reverse mask
    6.
    发明授权
    Method for forming self-aligned channel implants using a gate poly reverse mask 失效
    使用栅极多反向掩模形成自对准沟道植入物的方法

    公开(公告)号:US06410394B1

    公开(公告)日:2002-06-25

    申请号:US09465305

    申请日:1999-12-17

    IPC分类号: H01L21336

    CPC分类号: H01L21/823807 Y10S977/712

    摘要: A method for forming a CMOS transistor gate with a self-aligned channel implant. A semiconductor structure having a first active area is provided. A first insulating layer is formed on the semiconductor structure, and a second insulating layer is formed on the first insulating layer. The second insulating layer is patterned using a poly reverse mask and an etch selective to the first insulating layer to form a first channel implant opening, and the poly reverse mask is removed. A first channel implant mask is formed exposing the first channel implant opening. Impurity ions are implanted through the first channel implant opening to form a first threshold adjust region and a first anti-punchthrough region. A gate layer is formed over the semiconductor structure, and the first gate layer is planarized to form a gate electrode. The second insulating layer is removed, and lightly doped source and drain regions, sidewall spacers and source and drain regions can be formed adjacent the gate electrode.

    摘要翻译: 一种用于形成具有自对准沟道植入物的CMOS晶体管栅极的方法。 提供具有第一有源区的半导体结构。 在半导体结构上形成第一绝缘层,在第一绝缘层上形成第二绝缘层。 使用多反向掩模和对第一绝缘层选择性地蚀刻第二绝缘层以形成第一沟道注入开口,并且去除多反向掩模。 形成暴露第一通道植入物开口的第一通道植入物掩模。 杂质离子通过第一通道注入开口注入,以形成第一阈值调整区域和第一抗穿通区域。 在半导体结构上形成栅极层,并且第一栅极层被平坦化以形成栅电极。 去除第二绝缘层,并且可以在栅电极附近形成轻掺杂的源极和漏极区域,侧壁间隔物和源极和漏极区域。

    Sprockets made of two materials with half holes on the edge of central portion
    7.
    发明授权
    Sprockets made of two materials with half holes on the edge of central portion 有权
    由两个材料制成的链轮,在中心部分的边缘有半孔

    公开(公告)号:US08574108B2

    公开(公告)日:2013-11-05

    申请号:US12819917

    申请日:2010-06-21

    申请人: Yimin Wang

    发明人: Yimin Wang

    IPC分类号: F16H55/30

    CPC分类号: F16H55/30 F16H55/06

    摘要: The present sprocket wheel invention enhances the efficiency of the sprockets made of two materials, e.g., a lighter material at central portion of the sprocket and a hard material at peripheral portion of the sprocket comprising teeth, by drilling half holes on the outer edge of the central portion and half holes on the inner edge of the peripheral portion of the sprocket. In the preferred embodiment, half of the thickness of the sprocket is the entire hole on the peripheral portion of the sprocket with harder materials, and the other half of the thickness of the sprocket is designed to have said half holes for rivets to attach the central portion and the peripheral portion of the sprocket.

    摘要翻译: 本链轮轮发明提高了由两种材料制成的链轮的效率,例如,在链轮的中心部分处的较轻的材料和在包括齿的链轮的周边部分处的硬质材料,通过在所述链轮的外边缘上钻出半孔 在链轮的周边部分的内边缘上的中心部分和半孔。 在优选实施例中,链轮的厚度的一半是具有较硬材料的链轮的周边部分上的整个孔,并且链轮的另一半厚度被设计成具有用于铆钉的所述半孔以将中心 部分和链轮的周边部分。

    Split gate flash cell and method for making the same
    8.
    发明授权
    Split gate flash cell and method for making the same 有权
    分闸门闪存单元及其制作方法

    公开(公告)号:US08557696B2

    公开(公告)日:2013-10-15

    申请号:US12983057

    申请日:2010-12-31

    申请人: Yimin Wang

    发明人: Yimin Wang

    IPC分类号: H01L21/3205 H01L21/4763

    摘要: A method for forming a split gate flash cell device provides for forming floating gate transistors. Each floating gate transistor is formed by providing a floating gate transistor substructure including an oxide disposed over a polysilicon gate disposed over a gate oxide disposed on a portion of a common source. Nitride spacers are formed along sidewalls of the floating gate transistor substructure and cover portions of the gate oxide that terminate at the sidewalls. An isotropic oxide etch is performed with the nitride spacers intact. The isotropic etch laterally recedes opposed edges of the oxide inwardly such that a width of the oxide is less than a width of the polysilicon gate. An inter-gate dielectric is formed over the floating gate transistor substructure and control gates are formed over the inter-gate dielectric to form the floating gate transistors.

    摘要翻译: 用于形成分离栅极闪存单元器件的方法提供用于形成浮置栅极晶体管。 每个浮栅晶体管通过提供浮置晶体管子结构形成,该浮动栅极晶体管子结构包括设置在设置在公共源的一部分上的栅极氧化物上的多晶硅栅极上的氧化物。 氮化物间隔物沿着浮栅晶体管子结构的侧壁和终止在侧壁处的栅极氧化物的覆盖部分形成。 用氮化物间隔物完整地进行各向同性氧化物蚀刻。 各向同性蚀刻横向后退氧化物的相对边缘,使得氧化物的宽度小于多晶硅栅极的宽度。 在浮栅晶体管子结构之上形成栅极间电介质,并且在栅极间电介质上形成控制栅极以形成浮栅晶体管。

    Methods and systems for blood flow measurement using doppler optical coherence tomography
    9.
    发明授权
    Methods and systems for blood flow measurement using doppler optical coherence tomography 有权
    使用多普勒光学相干断层扫描进行血流测量的方法和系统

    公开(公告)号:US08244334B2

    公开(公告)日:2012-08-14

    申请号:US12101006

    申请日:2008-04-10

    IPC分类号: A61B6/00

    CPC分类号: A61B3/102

    摘要: This invention provides methods for non-invasive, real-time measuring and/or monitoring of local blood flow in a subject. Methods of the invention generally include the steps of obtaining Doppler shift images of at least two planes intersecting blood vessels at the scanned location; determining Doppler angles using the Doppler shift images; and then using the Doppler angles thus determined together with the Doppler shift signals to arrive at a measure of the volumetric blood flow. Also provided are systems and software for performing the methods.

    摘要翻译: 本发明提供了用于非侵入性,实时测量和/或监测受试者中局部血流的方法。 本发明的方法通常包括以下步骤:在扫描位置处获得与血管相交的至少两个平面的多普勒频移图像; 使用多普勒频移图像确定多普勒角度; 然后使用与多普勒频移信号一起确定的多普勒角度来达到体积血流量的量度。 还提供了用于执行方法的系统和软件。

    NOVEL DISSOLUTION TESTING SYSTEM AND APPARATUS WITH OFF-CENTER IMPELLER
    10.
    发明申请
    NOVEL DISSOLUTION TESTING SYSTEM AND APPARATUS WITH OFF-CENTER IMPELLER 审中-公开
    新型溶解测试系统和离心机的设备

    公开(公告)号:US20120042737A1

    公开(公告)日:2012-02-23

    申请号:US13086382

    申请日:2011-04-13

    IPC分类号: G01N33/00

    摘要: In the pharmaceutical industry, dissolution testing is a critical step in quality control and a standard method for assessing batch-to-batch consistency of solid oral drug delivery systems, such as tablets. One of the most widely used dissolution test devices is the UPS Apparatus 2 (paddle). At present, dissolution testing remains susceptible to significant error and test failures. Previous studies indicate that poor reproducibility of dissolution testing data and inconsistency of dissolution results can arise from the complex hydrodynamics present in the unbaffled, hemispherical-bottom, agitated vessel that constitute the UPS Apparatus 2. In the present invention, a novel dissolution testing apparatus was constructed in which the impeller was placed off-center with respect to the center point of the vessel bottom. It has been shown that the dissolution profiles in the present invention were not significantly affected by tablet location as confirmed by the value of the factors f1 and f2, which were well within the accepted ranges and did not change appreciably with the tablet location. By contrast, the corresponding dissolution tests for current systems failed these similarity tests. In addition, the flow fields near the vessel bottom were obtained via CFD simulation and were found to be significantly more uniform in e present invention than in the current standard apparatus. The present invention has the potential of becoming a valid alternative to the standard USP dissolution testing apparatuses used for dissolution testing.

    摘要翻译: 在制药行业,溶出度测试是质量控制的关键步骤,也是评估固体口服药物输送系统(如片剂)批次间一致性的标准方法。 最广泛使用的溶解测试装置之一是UPS装置2(桨)。 目前,溶出度测试仍然容易发生重大错误和测试失败。 以前的研究表明,溶解测试数据的可重复性差和溶解结果的不一致性可能来自构成UPS装置2的未封闭的,半球底的搅拌容器中存在的复杂的流体动力学。在本发明中,新的溶出测试装置是 其中叶轮相对于容器底部的中心点偏离中心。 已经表明,本发明中的溶出曲线不受片剂位置的显着影响,如通过因子f1和f2的值所证实的,其值在所接受的范围内,并且与片剂位置没有明显变化。 相比之下,目前系统的相应溶出度测试失败了这些相似性测试。 另外,通过CFD模拟获得容器底部附近的流场,并且在本发明中发现与现有的标准装置相比,其均匀性更均匀。 本发明具有成为用于溶出测试的标准USP溶出测试装置的有效替代品的潜力。