摘要:
The present invention provides a method for forming a recessed channel transistor comprising the steps of: forming a plurality of active areas lines in a semiconductor substrate with an upper surface, said lines being segmented by segmentation structures having an upper surface height differing from the substrate surface; forming a first and a second extension region arranged above the active area and adjacent said segmentation structures; forming recessed channel devices in the active area segments in the remaining portion of the active area segment between said extension regions.
摘要:
A method for forming a split gate flash cell memory device provides for establishing a floating gate region then using spacers or other hard mask materials that cover opposed edges of a gate electrode material in the gate region, to serve as hard masks during an etching operation that partially etches the gate electrode material which may be polysilicon. The gate electrode so produced serves as a floating gate electrode and includes a recessed central portion flanked by a pair of opposed upwardly extending fins which may terminate upwardly at an apex. A floating gate oxide is then formed by thermal oxidation and/or oxide deposition techniques.
摘要:
A method for forming a CMOS transistor gate with a self-aligned channel implant. A semiconductor structure having a first active area is provided. A first insulating layer is formed on the semiconductor structure, and a second insulating layer is formed on the first insulating layer. The second insulating layer is patterned using a poly reverse mask and an etch selective to the first insulating layer to form a first channel implant opening, and the poly reverse mask is removed. A first channel implant mask is formed exposing the first channel implant opening. Impurity ions are implanted through the first channel implant opening to form a first threshold adjust region and a first anti-punchthrough region. A gate layer is formed over the semiconductor structure, and the first gate layer is planarized to form a gate electrode. The second insulating layer is removed, and lightly doped source and drain regions, sidewall spacers and source and drain regions can be formed adjacent the gate electrode.
摘要:
The present sprocket wheel invention enhances the efficiency of the sprockets made of two materials, e.g., a lighter material at central portion of the sprocket and a hard material at peripheral portion of the sprocket comprising teeth, by drilling half holes on the outer edge of the central portion and half holes on the inner edge of the peripheral portion of the sprocket. In the preferred embodiment, half of the thickness of the sprocket is the entire hole on the peripheral portion of the sprocket with harder materials, and the other half of the thickness of the sprocket is designed to have said half holes for rivets to attach the central portion and the peripheral portion of the sprocket.
摘要:
A method for forming a split gate flash cell device provides for forming floating gate transistors. Each floating gate transistor is formed by providing a floating gate transistor substructure including an oxide disposed over a polysilicon gate disposed over a gate oxide disposed on a portion of a common source. Nitride spacers are formed along sidewalls of the floating gate transistor substructure and cover portions of the gate oxide that terminate at the sidewalls. An isotropic oxide etch is performed with the nitride spacers intact. The isotropic etch laterally recedes opposed edges of the oxide inwardly such that a width of the oxide is less than a width of the polysilicon gate. An inter-gate dielectric is formed over the floating gate transistor substructure and control gates are formed over the inter-gate dielectric to form the floating gate transistors.
摘要:
This invention provides methods for non-invasive, real-time measuring and/or monitoring of local blood flow in a subject. Methods of the invention generally include the steps of obtaining Doppler shift images of at least two planes intersecting blood vessels at the scanned location; determining Doppler angles using the Doppler shift images; and then using the Doppler angles thus determined together with the Doppler shift signals to arrive at a measure of the volumetric blood flow. Also provided are systems and software for performing the methods.
摘要:
In the pharmaceutical industry, dissolution testing is a critical step in quality control and a standard method for assessing batch-to-batch consistency of solid oral drug delivery systems, such as tablets. One of the most widely used dissolution test devices is the UPS Apparatus 2 (paddle). At present, dissolution testing remains susceptible to significant error and test failures. Previous studies indicate that poor reproducibility of dissolution testing data and inconsistency of dissolution results can arise from the complex hydrodynamics present in the unbaffled, hemispherical-bottom, agitated vessel that constitute the UPS Apparatus 2. In the present invention, a novel dissolution testing apparatus was constructed in which the impeller was placed off-center with respect to the center point of the vessel bottom. It has been shown that the dissolution profiles in the present invention were not significantly affected by tablet location as confirmed by the value of the factors f1 and f2, which were well within the accepted ranges and did not change appreciably with the tablet location. By contrast, the corresponding dissolution tests for current systems failed these similarity tests. In addition, the flow fields near the vessel bottom were obtained via CFD simulation and were found to be significantly more uniform in e present invention than in the current standard apparatus. The present invention has the potential of becoming a valid alternative to the standard USP dissolution testing apparatuses used for dissolution testing.