公开(公告)号：US07897131B2

公开(公告)日：2011-03-01

申请号：US11878155

申请日：2007-07-20

申请人： Jeung-Ku Kang ,  Seong-Ho Yang ,  Hyun-Seok Kim ,  Kyu-Sung Han ,  Se-Yun Kim ,  Jung-Woo Lee ,  Weon-Ho Shin ,  Jun-Hyeon Bae

发明人： Jeung-Ku Kang ,  Seong-Ho Yang ,  Hyun-Seok Kim ,  Kyu-Sung Han ,  Se-Yun Kim ,  Jung-Woo Lee ,  Weon-Ho Shin ,  Jun-Hyeon Bae

IPC分类号： D01F9/12 ,  H01B1/16

CPC分类号： B82Y40/00 ,  B01J21/185 ,  B01J23/75 ,  B01J23/755 ,  B01J37/0203 ,  B01J37/16 ,  B82Y30/00 ,  C01B3/0021 ,  C01B32/162 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30449 ,  H01J2201/30469 ,  Y02E60/325

摘要： The present invention relates to a method for manufacturing a transition metal-carbon nanotube hybrid material using nitrogen as a medium. The present invention is characterized in that nitrogen-added carbon nanotube is grown in the presence of metal catalyst particles by reacting an hydrocarbon gas with a nitrogen gas by a chemical vapor deposition (CVD) and a transition metal-carbon nanotube hybrid material where a transition metal is uniformly attached to the entire carbon nanotube structure in which nitrogen with a great chemical reactivity is added as heterogeneous elements is chemically manufactured. Therefore, the present invention does not use an acid treatment required to attach transition-metal atoms to the carbon-nanotube, a surface treating process using a surfactant and the like and an inhibitor for preventing the coagulation of the transition metal so that a simplification of the process is obtained and the method is an environment-friendly method. The transition metal-carbon nanotube hybrid material manufactured by the above can be applied variously as a hydrogen storage material, a catalyst material, an electric field emission device and an electrode material.

摘要翻译： 本发明涉及使用氮作为介质制造过渡金属 - 碳纳米管混合材料的方法。 本发明的特征在于，通过化学气相沉积（CVD）和过渡金属 - 碳纳米管混合材料使碳氢化合物气体与氮气反应，在金属催化剂颗粒的存在下生长氮添加碳纳米管，其中过渡 金属均匀地附着在整个碳纳米管结构上，其中加入具有大的化学反应性的氮作为异质元素是化学制造的。 因此，本发明不使用将过渡金属原子附着在碳纳米管上所需的酸处理，使用表面活性剂等的表面处理方法和防止过渡金属凝结的抑制剂， 获得该过程，并且该方法是环境友好的方法。 由上述制造的过渡金属 - 碳纳米管混合材料可以用作储氢材料，催化剂材料，电场发射装置和电极材料。

公开(公告)号：US20080102015A1

公开(公告)日：2008-05-01

申请号：US11878155

申请日：2007-07-20

申请人： Jeung-Ku Kang ,  Seong-Ho Yang ,  Hyun-Seok Kim ,  Kyu-Sung Han ,  Se-Yun Kim ,  Jung-Woo Lee ,  Weon-Ho Shin ,  Jun-Hyeon Bae

发明人： Jeung-Ku Kang ,  Seong-Ho Yang ,  Hyun-Seok Kim ,  Kyu-Sung Han ,  Se-Yun Kim ,  Jung-Woo Lee ,  Weon-Ho Shin ,  Jun-Hyeon Bae

IPC分类号： C01B21/00

CPC分类号： B82Y40/00 ,  B01J21/185 ,  B01J23/75 ,  B01J23/755 ,  B01J37/0203 ,  B01J37/16 ,  B82Y30/00 ,  C01B3/0021 ,  C01B32/162 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30449 ,  H01J2201/30469 ,  Y02E60/325

摘要： The present invention relates to a method for manufacturing a transition metal-carbon nanotube hybrid material using nitrogen as a medium. The present invention is characterized in that nitrogen-added carbon nanotube is grown in the presence of metal catalyst particles by reacting an hydrocarbon gas with a nitrogen gas by a chemical vapor deposition (CVD) and a transition metal-carbon nanotube hybrid material where a transition metal is uniformly attached to the entire carbon nanotube structure in which nitrogen with a great chemical reactivity is added as heterogeneous elements is chemically manufactured. Therefore, the present invention does not use an acid treatment required to attach transition-metal atoms to the carbon-nanotube, a surface treating process using a surfactant and the like and an inhibitor for preventing the coagulation of the transition metal so that a simplification of the process is obtained and the method is an environment-friendly method. The transition metal-carbon nanotube hybrid material manufactured by the above can be applied variously as a hydrogen storage material, a catalyst material, an electric field emission device and an electrode material.

摘要翻译： 本发明涉及使用氮作为介质制造过渡金属 - 碳纳米管混合材料的方法。 本发明的特征在于，通过化学气相沉积（CVD）和过渡金属 - 碳纳米管混合材料使碳氢化合物气体与氮气反应，在金属催化剂颗粒的存在下生长氮添加碳纳米管，其中过渡 金属均匀地附着在整个碳纳米管结构上，其中加入具有大的化学反应性的氮作为异质元素是化学制造的。 因此，本发明不使用将过渡金属原子附着在碳纳米管上所需的酸处理，使用表面活性剂等的表面处理方法和防止过渡金属凝结的抑制剂， 获得该过程，并且该方法是环境友好的方法。 由上述制造的过渡金属 - 碳纳米管混合材料可以用作储氢材料，催化剂材料，电场发射装置和电极材料。

公开(公告)号：US08580227B2

公开(公告)日：2013-11-12

申请号：US12740010

申请日：2008-06-17

申请人： Jeung-Ku Kang ,  Weon-Ho Shin ,  Jun-Hyeon Bae ,  Jung-Hoon Choi ,  Cheol-Ock Song ,  Kyung-Min Choi

发明人： Jeung-Ku Kang ,  Weon-Ho Shin ,  Jun-Hyeon Bae ,  Jung-Hoon Choi ,  Cheol-Ock Song ,  Kyung-Min Choi

IPC分类号： C01B3/08

CPC分类号： C01B3/08 ,  Y02E60/36

摘要： The present inventions are a method for production of hydrogen which decomposes water into hydrogen by oxidation of metals only when the metals are exposed to the water, while preventing oxidation of pure metal nanoparticles using block copolymers and, in addition, hydrogen produced by the method described above. The method of the present invention has advantages of improved convenience and simplicity, achieves a preferable approach for hydrogen storage because the metal nanoparticles enclosed by the block copolymer have the ease of delivery and reaction thereof. Additionally, the method of the present invention only using water and the metal is considered eco-friendly and useful in industrial energy applications.

摘要翻译： 本发明是一种生产氢的方法，其仅在金属暴露于水中时才将金属氧化分解成氢，同时使用嵌段共聚物防止纯金属纳米粒子的氧化，另外，通过所述方法产生的氢 以上。 本发明的方法具有改进的便利性和简便性的优点，因为由嵌段共聚物包围的金属纳米颗粒具有容易的输送和反应，因此实现了氢存储的优选方法。 此外，本发明仅使用水和金属的方法被认为是环境友好的并且在工业能量应用中是有用的。

公开(公告)号：US20100239494A1

公开(公告)日：2010-09-23

申请号：US12740010

申请日：2008-06-17

申请人： Jeung-Ku Kang ,  Weon-Ho Shin ,  Jun-Hyeon Bae ,  Jung-Hoon Choi ,  Cheol-Ock Song ,  Kyung-Min Choi

发明人： Jeung-Ku Kang ,  Weon-Ho Shin ,  Jun-Hyeon Bae ,  Jung-Hoon Choi ,  Cheol-Ock Song ,  Kyung-Min Choi

IPC分类号： C01B3/08

CPC分类号： C01B3/08 ,  Y02E60/36

摘要： The present inventions are a method for production of hydrogen which decomposes water into hydrogen by oxidation of metals only when the metals are exposed to the water, while preventing oxidation of pure metal nanoparticles using block copolymers and, in addition, hydrogen produced by the method described above. The method of the present invention has advantages of improved convenience and simplicity, achieves a preferable approach for hydrogen storage because the metal nanoparticles enclosed by the block copolymer have the ease of delivery and reaction thereof. Additionally, the method of the present invention only using water and the metal is considered eco-friendly and useful in industrial energy applications.

摘要翻译： 本发明是一种生产氢的方法，其仅在金属暴露于水中时才将金属氧化分解成氢，同时使用嵌段共聚物防止纯金属纳米粒子的氧化，另外，通过所述方法产生的氢 以上。 本发明的方法具有改进的便利性和简便性的优点，因为由嵌段共聚物包围的金属纳米颗粒具有容易的输送和反应，因此实现了氢存储的优选方法。 此外，本发明仅使用水和金属的方法被认为是环境友好的并且在工业能量应用中是有用的。

公开(公告)号：US20120146042A1

公开(公告)日：2012-06-14

申请号：US13269348

申请日：2011-10-07

申请人： Ki-Tae KIM ,  Sung-Ki Kim ,  Hong-Koo Lee ,  Jun-Hyeon Bae

发明人： Ki-Tae KIM ,  Sung-Ki Kim ,  Hong-Koo Lee ,  Jun-Hyeon Bae

IPC分类号： H01L33/08

CPC分类号： H01L27/1288 ,  H01L21/268 ,  H01L27/124 ,  H01L29/04 ,  H01L29/41733

摘要： A display device includes: a substrate; gate and data lines crossing each other on the substrate to define a pixel region; a thin film transistor that is connected to the gate and data lines, and includes a gate electrode, an active layer made of micro-crystalline silicon, and source and drain electrodes which are sequentially formed; a passivation layer on the thin film transistor; and a first electrode in the pixel region on the passivation layer and connected to the drain electrode, wherein a first overlap width between the drain electrode and the gate electrode is less than a second overlap width between the source electrode and the gate electrode.

摘要翻译： 显示装置包括：基板; 栅极和数据线在衬底上彼此交叉以限定像素区域; 连接到栅极和数据线的薄膜晶体管，并且包括栅电极，由微晶硅制成的有源层，以及依次形成的源极和漏极; 薄膜晶体管上的钝化层; 以及钝化层上的像素区域中的第一电极，并连接到漏电极，其中漏电极和栅电极之间的第一重叠宽度小于源电极和栅电极之间的第二重叠宽度。

公开(公告)号：US08158469B2

公开(公告)日：2012-04-17

申请号：US12843738

申请日：2010-07-26

申请人： Hong-Koo Lee ,  Sung-Ki Kim ,  Jun-Hyeon Bae ,  Ki-Tae Kim

发明人： Hong-Koo Lee ,  Sung-Ki Kim ,  Jun-Hyeon Bae ,  Ki-Tae Kim

IPC分类号： H01L21/84

CPC分类号： H01L21/268 ,  H01L27/1248 ,  H01L27/1285

摘要： A method of fabricating an array substrate includes forming a gate line and a gate electrode; forming a gate insulating layer, an intrinsic amorphous silicon layer, an inorganic material insulating layer and a heat transfer layer on the gate line and the gate electrode; irradiating a laser beam onto the heat transfer layer to crystallize the intrinsic amorphous silicon layer into a polycrystalline silicon layer; removing the heat transfer layer; patterning the inorganic insulating material layer using a buffered oxide etchant to form an etch-stopper corresponding to the gate electrode forming an impurity-doped amorphous silicon layer and a metal layer on the etch-stopper and the polycrystalline silicon layer; patterning the metal layer to form a data line, a source electrode and a drain electrode and forming a pixel electrode on the passivation layer.

摘要翻译： 制造阵列基板的方法包括形成栅极线和栅电极; 在栅极线和栅电极上形成栅极绝缘层，本征非晶硅层，无机材料绝缘层和传热层; 将激光束照射到传热层上以将本征非晶硅层结晶成多晶硅层; 去除传热层; 使用缓冲的氧化物蚀刻剂来形成无机绝缘材料层，以形成对应于栅电极的蚀刻停止层，在蚀刻停止层和多晶硅层上形成杂质掺杂非晶硅层和金属层; 图案化金属层以形成数据线，源电极和漏电极，并在钝化层上形成像素电极。