公开(公告)号：US06730198B2

公开(公告)日：2004-05-04

申请号：US10223806

申请日：2002-08-19

申请人： Jianxing Li ,  Michael R. Pinter ,  Steven Wu

发明人： Jianxing Li ,  Michael R. Pinter ,  Steven Wu

IPC分类号： C23C1434

CPC分类号： H01J37/342 ,  C23C14/3414 ,  C25D7/04

摘要： The invention includes container-shaped physical vapor deposition targets having a first conductive material in a container-shape and a second conductive material on an entirety of an exterior surface of the first conductive material. The second conductive material has a different composition than the first conductive material.

摘要翻译： 本发明包括具有容器形状的第一导电材料和在第一导电材料的整个外表面上的第二导电材料的容器形物理气相沉积靶。 第二导电材料具有与第一导电材料不同的组成。

公开(公告)号：US06482302B1

公开(公告)日：2002-11-19

申请号：US09687946

申请日：2000-10-13

申请人： Jianxing Li ,  Michael R. Pinter ,  Steven Wu

发明人： Jianxing Li ,  Michael R. Pinter ,  Steven Wu

IPC分类号： C23C1434

CPC分类号： H01J37/342 ,  C23C14/3414 ,  C25D7/04

摘要： The invention includes container-shaped physical vapor deposition targets having a first conductive material in a container-shape and a second conductive material on an entirety of an exterior surface of the first conductive material. The second conductive material has a different composition than the first conductive material.

摘要翻译： 本发明包括具有容器形状的第一导电材料和在第一导电材料的整个外表面上的第二导电材料的容器形物理气相沉积靶。 第二导电材料具有与第一导电材料不同的组成。

公开(公告)号：US20130045131A1

公开(公告)日：2013-02-21

申请号：US13586074

申请日：2012-08-15

申请人： Jianxing Li ,  Michael R. Pinter ,  David E. Steele

发明人： Jianxing Li ,  Michael R. Pinter ,  David E. Steele

IPC分类号： B23K35/24 ,  B22D18/00 ,  C22C18/04

CPC分类号： B23K35/282 ,  B23K35/025 ,  C22C1/02 ,  C22C18/04 ,  Y10T428/12

摘要： A solder may include zinc, aluminum, magnesium and gallium. The zinc may be present in an amount from about 82% to 96% by weight of the solder. The aluminum may be present in an amount from about 3% to about 15% by weight of the solder. The magnesium may be present in an amount from about 0.5% to about 1.5% by weight of the solder. The gallium may be present in an amount between about 0.5% to about 1.5% by weight of the solder.

摘要翻译： 焊料可以包括锌，铝，镁和镓。 锌可以以焊料重量的约82％至96％的量存在。 铝可以以焊料重量的约3％至约15％的量存在。 镁可以以焊料重量的约0.5％至约1.5％的量存在。 镓可以以焊料重量的约0.5％至约1.5％的量存在。

公开(公告)号：US06451222B1

公开(公告)日：2002-09-17

申请号：US09465546

申请日：1999-12-16

申请人： Jianxing Li ,  Tim Scott ,  Tamara White

发明人： Jianxing Li ,  Tim Scott ,  Tamara White

IPC分类号： C04B3501

CPC分类号： C23C14/3414 ,  C04B35/462 ,  C23C14/08 ,  Y10S977/775 ,  Y10S977/777 ,  Y10S977/838 ,  Y10S977/891

摘要： The invention comprises ferroelectric vapor deposition targets and to methods of making ferroelectric vapor deposition targets. In one implementation, a ferroelectric physical vapor deposition target has a predominate grain size of less than or equal to 1.0 micron, and has a density of at least 95% of maximum theoretical density. In one implementation, a method of making a ferroelectric physical vapor deposition target includes positioning a prereacted ferroelectric powder within a hot press cavity. The prereacted ferroelectric powder predominately includes individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to about 100 nanometers. The prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape having a density of at least about 95% of maximum theoretical density and a predominate maximum grain size which is less than or equal to 1.0 micron. In one implementation, the prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape at a maximum pressing temperature which is at least 200° C. lower than would be required to produce a target of a first density of at least 85% of maximum theoretical density in hot pressing the same powder but having a predominate particle size maximum straight linear dimension of at least 1.0 micron at the same pressure and for the same amount of time, and a target density greater than the first density at the lower pressing temperature is achieved.

公开(公告)号：US06277254B1

公开(公告)日：2001-08-21

申请号：US09465554

申请日：1999-12-16

申请人： Qi Tan ,  Jianxing Li

发明人： Qi Tan ,  Jianxing Li

IPC分类号： C23C1400

CPC分类号： C23C16/409 ,  C04B35/491 ,  C23C14/3414

摘要： The invention includes a method for forming a ceramic composition. Materials comprising lead, zirconium, titanium and bismuth are combined together to form a mixture. At least one of the materials is provided in the mixture as a nanophase powder. The mixture is then densified to form the ceramic composition. The invention also includes a method for forming a dense ferroelectric ceramic composition. Lead, zirconium, titanium and bismuth are combined together to form a mixture. The mixture is then densified to form a ferroelectric ceramic composition having a density of greater than or equal to 95% of a theoretical maximum density for the composition. A predominate portion of the composition has a grain size of less than or equal to about 500 nanometers. The invention also includes a ferroelectric ceramic composition comprising lead, zirconium, titanium and bismuth. Such composition has a density of greater than or equal to 95% of a theoretical maximum density for the composition, and a predominate portion of the composition has a grain size of less than or equal to about 500 nanometers.

摘要翻译： 本发明包括形成陶瓷组合物的方法。 将包含铅，锆，钛和铋的材料组合在一起形成混合物。 在混合物中至少提供一种材料作为纳米相粉末。 然后将混合物致密化以形成陶瓷组合物。 本发明还包括形成致密铁电陶瓷组合物的方法。 铅，锆，钛和铋组合在一起形成混合物。 然后将混合物致密化以形成密度大于或等于组合物的理论最大密度的95％的铁电陶瓷组合物。 组合物的主要部分具有小于或等于约500纳米的粒度。 本发明还包括包含铅，锆，钛和铋的铁电陶瓷组合物。 这种组合物具有大于或等于组合物的理论最大密度的95％的密度，并且组合物的主要部分具有小于或等于约500纳米的晶粒尺寸。

公开(公告)号：US07391112B2

公开(公告)日：2008-06-24

申请号：US11142971

申请日：2005-06-01

申请人： Jianxing Li ,  Ming Fang ,  Ting Zhong ,  Fay Hua ,  Kevin J. Lee

发明人： Jianxing Li ,  Ming Fang ,  Ting Zhong ,  Fay Hua ,  Kevin J. Lee

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1316 ,  H01L2224/13164 ,  H01L2224/13609 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/01028 ,  H01L2224/13099 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A structure including a substrate, a copper bump formed over the substrate, and a barrier layer comprising an alloy of at least one of iron and nickel, formed over the copper bump, and methods to make such a structure.

摘要翻译： 包括衬底，形成在衬底上的铜凸块，以及包含在铜凸块上形成的铁和镍中的至少一种的合金的阻挡层的结构以及制造这种结构的方法。

公开(公告)号：US20080118761A1

公开(公告)日：2008-05-22

申请号：US11853556

申请日：2007-09-11

申请人： Martin W. Weiser ,  Jianxing Li

发明人： Martin W. Weiser ,  Jianxing Li

IPC分类号： C22C12/00 ,  B32B15/04

CPC分类号： C22C12/00 ,  B23K35/26 ,  B23K35/264 ,  H01L24/29 ,  H01L2224/32225 ,  H01L2924/01322 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  Y10T428/31678 ,  H01L2924/00

摘要： Lead-free solder compositions having a thermal conductivity are disclosed that include at least about 2% of silver, at least about 60% of bismuth, and at least one additional metal in an amount that will increase the thermal conductivity of the solder composition over a comparison solder composition consisting of silver and bismuth, wherein the at least one additional metal does not significantly modify the solidus temperature and does not shift the liquidus temperature outside of an acceptable liquidus temperature range. Methods of producing these lead-free solder compositions are also disclosed that include providing at least about 2% of silver, providing at least about 60% of bismuth, providing at least one additional metal in an amount that will increase the thermal conductivity of the solder composition over a comparison solder composition consisting of silver and bismuth, blending the bismuth with the at least one additional metal to form a bismuth-metal blend, and blending the bismuth-metal blend with copper to form the solder composition, wherein the at least one additional metal does not significantly modify the solidus temperature and does not shift the liquidus temperature outside of an acceptable liquidus temperature range. Additional methods of producing a lead-free solder composition having a thermal conductivity include providing at least about 2% of silver, providing at least about 60% of bismuth, providing at least one additional metal in an amount that will increase the thermal conductivity of the solder composition over a comparison solder composition consisting of silver and bismuth, blending the silver with the at least one additional metal to form a silver-metal alloy, and blending the silver-metal alloy with bismuth to form the solder composition, wherein the at least one additional metal does not significantly modify the solidus temperature and does not shift the liquidus temperature outside of an acceptable liquidus temperature range

公开(公告)号：US06758920B2

公开(公告)日：2004-07-06

申请号：US09784234

申请日：2001-02-14

申请人： Shozo Nagano ,  Hinrich Hargarter ,  Jianxing Li ,  Jane Buehler

发明人： Shozo Nagano ,  Hinrich Hargarter ,  Jianxing Li ,  Jane Buehler

IPC分类号： C22C900

CPC分类号： C22C9/00 ,  C22C5/08 ,  C22C9/02 ,  C23C14/3414 ,  C25D7/12 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. Other useable copper alloys include an alloy of copper and one or more other elements, the one or more other elements being present in the alloy at a total concentration from less than 1.0 at % to 0.001 at % and being selected from the group consisting of Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ti, Zr, Hf, Zn, Cd, B, Ga, In, C, Se, Te, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ni, Pd, Pt, Au, Tl, and Pb. An electroplating anode is formed to comprise one or more of the above alloys.

摘要翻译： 物理气相沉积靶包括铜和银的合金，合金中的银以小于1.0原子％至0.001原子％存在。 在一个实施方案中，物理气相沉积靶包括铜和银的合金，合金中的银以50at％至70at％存在。 物理气相沉积靶包括铜和锡的合金，锡在合金中以小于1.0原子％至0.001原子％存在。 在一个实施方式中，导电集成电路金属合金互连包括铜和银的合金，合金中的银以小于1.0原子％至0.001原子％存在。 导电集成电路金属合金互连包括铜和银的合金，合金中的银以50原子％至70原子％存在。 导电集成电路金属合金互连包括铜和锡的合金，合金中存在锡小于1.0原子％至0.001原子％。 其他可用的铜合金包括铜和一种或多种其它元素的合金，所述一种或多种其它元素以小于1.0原子％至0.001原子％的总浓度存在于合金中，并且选自Be ，Ca，Sr，Ba，Sc，Y，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Ti，Zr，Hf，Zn，Cd ，B，Ga，In，C，Se，Te，V，Nb，Ta，Cr，Mo，W，Mn，Tc，Re，Fe，Ru，Os，Co，Rh，Ni，Pd，Pt，Au， ，和Pb。 形成电镀阳极以包含一种或多种上述合金。

公开(公告)号：US07153468B2

公开(公告)日：2006-12-26

申请号：US10344772

申请日：2001-08-16

申请人： Vasanth Mohan ,  Jianxing Li ,  Timothy A. Scott

发明人： Vasanth Mohan ,  Jianxing Li ,  Timothy A. Scott

IPC分类号： B22F3/12 ,  C22C1/05

CPC分类号： C23C14/3414 ,  Y10T428/12014 ,  Y10T428/31678

摘要： A method includes combining a solid first material and a solid second material and melting at least a portion of the first material sufficient to coat the second material and any remaining first material. An approximately homogenous distribution of the second material can be formed throughout the liquid phase of the first material. The first material liquid phase can then be solidified to define a composite target blank exhibiting an approximately homogenous distribution of the solid second material in a matrix of the solidified first material. The first material can comprise SE and the second material can comprise Ge and/or Ag. The composite target blank can include at least about 50 vol % matrix. The first and second materials can be powdered metals. Accordingly, a physical vapor deposition target can include a matrix of a first material and an approximately homogenous distribution of particles of a second material throughout the first material matrix. The second material can include powders exhibiting particles sizes no greater than about 325 mesh.

摘要翻译： 一种方法包括组合固体第一材料和固体第二材料，并熔化足以涂覆第二材料和任何剩余的第一材料的第一材料的至少一部分。 可以在第一材料的整个液相中形成大致均匀的第二材料分布。 然后可以将第一材料液相固化以限定在固化的第一材料的基质中显示固体第二材料的大致均匀分布的复合靶材坯料。 第一材料可以包括SE，第二材料可以包括Ge和/或Ag。 复合靶材坯料可以包括至少约50vol％的基体。 第一和第二种材料可以是金属粉末。 因此，物理气相沉积靶可以包括第一材料的基体和第二材料的颗粒在整个第一材料基体中的大致均匀分布。 第二种材料可以包括表现出不大于约325目的颗粒尺寸的粉末。

公开(公告)号：US06797079B2

公开(公告)日：2004-09-28

申请号：US09783835

申请日：2001-02-14

申请人： Shozo Nagano ,  Hinrich Hargarter ,  Jianxing Li ,  Jane Buehler

发明人： Shozo Nagano ,  Hinrich Hargarter ,  Jianxing Li ,  Jane Buehler

IPC分类号： C23C1400

CPC分类号： C22C9/00 ,  C22C5/08 ,  C22C9/02 ,  C23C14/3414 ,  C25D7/12 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. Other useable copper alloys include an alloy of copper and one or more other elements, the one or more other elements being present in the alloy at a total concentration from less than 1.0 at % to 0.001 at % and being selected from the group consisting of Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ti, Zr, Hf, Zn, Cd, B, Ga, In, C, Se, Te, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ni, Pd, Pt, Au, Tl, and Pb. An electroplating anode is formed to comprise one or more of the above alloys.

摘要翻译： 物理气相沉积靶包括铜和银的合金，合金中的银以小于1.0原子％至0.001原子％存在。 在一个实施方案中，物理气相沉积靶包括铜和银的合金，合金中的银以50at％至70at％存在。 物理气相沉积靶包括铜和锡的合金，锡在合金中以小于1.0原子％至0.001原子％存在。 在一个实施方式中，导电集成电路金属合金互连包括铜和银的合金，合金中的银以小于1.0原子％至0.001原子％存在。 导电集成电路金属合金互连包括铜和银的合金，合金中的银以50原子％至70原子％存在。 导电集成电路金属合金互连包括铜和锡的合金，合金中存在锡小于1.0原子％至0.001原子％。 其他可用的铜合金包括铜和一种或多种其它元素的合金，所述一种或多种其它元素以小于1.0原子％至0.001原子％的总浓度存在于合金中，并且选自Be ，Ca，Sr，Ba，Sc，Y，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Ti，Zr，Hf，Zn，Cd ，B，Ga，In，C，Se，Te，V，Nb，Ta，Cr，Mo，W，Mn，Tc，Re，Fe，Ru，Os，Co，Rh，Ni，Pd，Pt，Au， ，和Pb。 形成电镀阳极以包含一种或多种上述合金。