Abstract:
A bus architecture for the application of data transmission between distinct integrated circuits. The bus architecture includes at least one transmission line connecting with I/O pin of ICs for transmitting data. In a middle point of the transmission line, there is a middle resistor with a resistance value preferably equal to the characteristic impedance of the transmission line. In addition, there are internal pull-up resistors within the ICs, which has a first end coupled to the I/O pin and a second end coupled to the voltage source. Each pull-up resistor has a resistance value higher than the characteristic impedance of the transmission line, for example, 2 or 3 times of the characteristic impedance, for suppressing the rising edge ringback.
Abstract:
A high-speed and low-noise output buffer with a slew control function in coordination with a GTL+ signal specification according to the invention. In the output buffer, general and speed driving elements concurrently drives a last output element. As an input signal is changed from a first logic level to a second logic level, the general and speed driving elements simultaneously start functioning. First, the speed driving element pulls down the control voltage of the output element to a potential having a potential difference from an expected final potential. Then, the general driving element pulls down the control voltage to close to the expected final potential. The output potential of the output element changes more quickly at the beginning. When close to the expected final potential, the variation of the output potential slows down. Since, the delay time of the output buffer is reduced without causing an over large ring back on the output signal, the output buffer with high-speed and low-noise can be obtained.
Abstract:
A device and method for converting a low voltage signal into a high voltage signal are provided, which can be implemented by using a low voltage CMOS manufacturing process to convert a low voltage signal of 0V to 1.5V into a high voltage signal of 2.5V to 1.25V. According to one preferred embodiment, PMOS transistors are employed to perform voltage level conversion and supply voltages of 1.25V and 2.5V are supplied to the PMOS transistors. During the conversion, no current path exists between the supply voltages thus effectively reducing static power consumption. In addition, the low level of the high voltage signal is outputted through the drain and source of the transistor so that the low level of the high voltage signal can be accurately defined and not affected by manufacturing parameters.
Abstract:
A clock circuit for supporting a plurality of memory module types is provided. The clock circuit is connected to a first type memory module slot, and a second type memory module slot. The clock circuit includes a clock generator for producing a clock signal and a clock buffer having doubly defined clock pins for outputting the first type memory clock signal or the second type memory clock signal. The clock buffer receives the clock signal and outputs a first type memory clock signal to the first type memory clock pin. The doubly defined clock pin is also capable of outputting a second type memory clock signal to the second type memory clock pin. This invention is capable of using just a single clock buffer to drive a plurality of different memory module types.