公开(公告)号：US20080013634A1

公开(公告)日：2008-01-17

申请号：US11774747

申请日：2007-07-09

申请人： Jin-Seok LEE ,  Song-Hun Kim ,  Kwang-Yung Jeong ,  Min-Soo Jung ,  Soon-Ju Kim

发明人： Jin-Seok LEE ,  Song-Hun Kim ,  Kwang-Yung Jeong ,  Min-Soo Jung ,  Soon-Ju Kim

IPC分类号： H04L27/00

CPC分类号： H04L25/4908 ,  H04L7/0091 ,  H04L7/041 ,  H04L25/085

摘要： An apparatus and method for high-speed interfacing between ICs are provided. A generator generates space clock pulses by adjusting a data rate of data. An inserter inserts commas during the space clock pulses. And a transmitter transmits bit streams with the data and the commas to a receiving IC. Accordingly, data can be transmitted and received at high rates between ICs.

摘要翻译： 提供了用于IC之间的高速接口的装置和方法。 发生器通过调整数据的数据速率来产生空间时钟脉冲。 插入器在空间时钟脉冲期间插入逗号。 并且发射机将数据和逗号发送到接收IC。 因此，可以在IC之间以高速率发送和接收数据。

公开(公告)号：US20140099736A1

公开(公告)日：2014-04-10

申请号：US14102917

申请日：2013-12-11

申请人： Sang-Hyup LEE ,  Jin-Seok LEE

发明人： Sang-Hyup LEE ,  Jin-Seok LEE

IPC分类号： G02F1/1362

CPC分类号： G02F1/136259 ,  G02F2001/13606 ,  G02F2001/136263 ,  G02F2001/136268 ,  G02F2001/13629 ,  G02F2201/40 ,  H01L27/124 ,  H01L27/1259

摘要： A liquid crystal display device includes an array substrate and a color filter substrate, a plurality of gate lines and a plurality of data lines formed on the array substrate such that the gate lines and the data lines intersect each other to define a plurality of pixel regions, a plurality of thin film transistors formed at respective intersections of the gate lines and the data lines, a liquid crystal layer interposed between the array and color filter substrates, and a plurality of repair patterns formed on the first substrate. Each of the plurality of the repair patterns crosses a corresponding one of the data lines, and is along and adjacent to a corresponding one of the gate lines, such that the repair pattern includes protruding ends that protrude from the corresponding data line to repair a defect on the pixel regions.

摘要翻译： 液晶显示装置包括阵列基板和滤色器基板，形成在阵列基板上的多条栅极线和多条数据线，使得栅极线和数据线彼此相交以限定多个像素区域 形成在栅极线和数据线的各交叉点处的多个薄膜晶体管，插入在阵列和滤色器基板之间的液晶层，以及形成在第一基板上的多个修复图案。 多个修复图案中的每一个都与相应的数据线交叉，并且与相应的一条栅极线相邻并相邻，使得修复图案包括从对应的数据线突出以修复缺陷的突出端 在像素区域上。

公开(公告)号：US20120251710A1

公开(公告)日：2012-10-04

申请号：US13267474

申请日：2011-10-06

申请人： Bo-Yun JANG ,  Jin-Seok LEE ,  Joon-Soo KIM

发明人： Bo-Yun JANG ,  Jin-Seok LEE ,  Joon-Soo KIM

IPC分类号： C01B33/113 ,  B05D5/12 ,  B01J19/00 ,  C23C16/26 ,  B82Y40/00 ,  B82Y30/00

CPC分类号： H01M4/049 ,  B01J3/006 ,  B82Y30/00 ,  B82Y40/00 ,  C01B33/181 ,  C01P2004/64 ,  H01M4/0428 ,  H01M4/483 ,  Y10T428/2982

摘要： The present disclosure provides a method of producing high purity SiOx nanoparticles with excellent volatility and an apparatus for producing the same, which enables mass production of SiOx nanoparticles by melting silicon through induction heating and injecting gas to a surface of the molten silicon. The apparatus includes a vacuum chamber, a graphite crucible into which raw silicon is charged, the graphite crucible being mounted inside the vacuum chamber, an induction melting part which forms molten silicon by induction heating of the silicon material received in the graphite crucible, a gas injector which injects a gas into the graphite crucible to be brought into direct contact with a surface of the molten silicon, and a collector disposed above the graphite crucible and collecting SiOx vapor produced by reaction between the molten silicon and the injected gas.

摘要翻译： 本公开内容提供了制造具有优异挥发性的高纯度SiO x纳米颗粒的方法及其制造方法，其能够通过感应加热熔融硅并将气体注入熔融硅的表面而大量生产SiO x纳米颗粒。 该装置包括：真空室，其中装有原料硅的石墨坩埚，石墨坩埚安装在真空室内;感应熔化部，其通过感应加热石墨坩埚中接收的硅材料形成熔融硅;气体 将注入气体的石油坩埚与熔融硅的表面直接接触的集尘器，以及设置在石墨坩埚上方的集电体，收集由熔融硅与注入气体反应产生的SiO x蒸气。

公开(公告)号：US20120292825A1

公开(公告)日：2012-11-22

申请号：US13115588

申请日：2011-05-25

申请人： Bo-Yun JANG ,  Jin-Seok LEE ,  Joon-Soo KIM

发明人： Bo-Yun JANG ,  Jin-Seok LEE ,  Joon-Soo KIM

IPC分类号： B29C39/38

CPC分类号： B22D11/045 ,  C01B33/037 ,  C30B11/001 ,  C30B11/003 ,  C30B28/10 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016 ,  Y10T117/1024 ,  Y10T117/1092

摘要： The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate.

摘要翻译： 本公开内容提供一种使用连续铸造制造用于太阳能电池的硅衬底的装置，其可以提高硅衬底的质量，生产率和能量转换效率。 该装置包括：坩埚单元，被配置为接收原料硅并具有排出口;加热单元，设置在坩埚单元的外壁和外部底表面，并加热坩埚单元以形成熔融硅;铸造单元， 硅进入硅衬底，冷却单元快速冷却硅衬底;以及转移单元，其设置在冷却单元的一端并转移硅衬底。 铸造单元包括具有限定在其中以与排出口水平连接的铸造空间的铸造单元主体和预热铸造单元主体以控制硅基板的凝固温度的辅助加热机构。

公开(公告)号：US20110305891A1

公开(公告)日：2011-12-15

申请号：US13158516

申请日：2011-06-13

申请人： Bo-Yun JANG ,  Jin-Seok LEE ,  Young-Soo AHN

发明人： Bo-Yun JANG ,  Jin-Seok LEE ,  Young-Soo AHN

IPC分类号： C01B33/02 ,  B32B5/00 ,  C01B33/021 ,  B28B5/02

CPC分类号： C30B28/10 ,  C30B15/007 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, and a method for manufacturing a silicon substrate using the same. The apparatus includes a raw silicon feeder, a silicon melting unit melting raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer board transferring the tapped silicon melt, and a silicon substrate forming unit cooling the silicon melt transferred by the transfer board to form a silicon substrate. The molten silicon stored in the molten silicon storage unit has a surface temperature of 1300˜1500° C., the transfer board is preheated to 700˜1400° C., and a transfer time of the silicon substrate after tapping the molten silicon from the molten silicon storage unit is 0.5˜3.5 seconds.

摘要翻译： 本公开内容提供了一种使用连续铸造制造用于太阳能电池的硅衬底的装置，以及使用该装置制造硅衬底的方法。 该装置包括原硅进料器，熔融原料硅以形成熔融硅的硅熔融单元，存储从硅熔融单元供应的熔融硅的熔融硅储存单元，并且对熔融硅进行开采以提供具有恒定厚度的硅熔体， 转移层的硅熔体的转移板，以及冷却由转印板转移的硅熔体形成硅衬底的硅衬底形成单元。 存储在熔融硅储存单元中的熔融硅的表面温度为1300〜1500℃，将转印板预热至700〜1400℃，从硅中分离出熔融硅后的硅基板的转印时间 熔融硅储存单元为0.5〜3.5秒。

公开(公告)号：US20120288432A1

公开(公告)日：2012-11-15

申请号：US13267490

申请日：2011-10-06

申请人： Jin-Seok LEE ,  Bo-Yun JANG ,  Young-Soo AHN

发明人： Jin-Seok LEE ,  Bo-Yun JANG ,  Young-Soo AHN

IPC分类号： C01B33/02 ,  C30B15/18 ,  C30B15/30 ,  C30B15/10

CPC分类号： C30B29/06 ,  C30B15/10 ,  C30B35/002 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

摘要： The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.

摘要翻译： 本公开提供了一种用于制造具有用于硅熔化的双坩埚的单晶硅锭的装置，其可由于双坩埚结构而被再利用。 该装置包括用于硅熔化的双坩埚，其中加入原料硅，加热双坩埚以将原料硅熔化成熔融硅的坩埚加热器，控制双坩埚旋转和升高的坩埚驱动单元， 设置在双坩埚上方并拉出浸入熔融硅中的晶种以产生硅锭。 双坩埚具有在其上侧开口的容器形状，并且包括具有连接内底和内壁的倾斜表面的石墨坩埚和插入到石墨坩埚中并接收装入双重坩埚的原料硅的石英坩埚 坩。

公开(公告)号：US20120144399A1

公开(公告)日：2012-06-07

申请号：US13217498

申请日：2011-08-25

申请人： Won Sub KIM ,  Bernhard EGGER ,  Dong-Hoon YOO ,  Jin-Seok LEE ,  Taisong JIN

发明人： Won Sub KIM ,  Bernhard EGGER ,  Dong-Hoon YOO ,  Jin-Seok LEE ,  Taisong JIN

IPC分类号： G06F9/46

CPC分类号： G06F9/544

摘要： A method and apparatus for thread synchronization is provided. The apparatus for thread synchronization includes a reader configured to generate a data read request, a writer configured to generate a data write request, a register file configured to have a full status indicating that the register file stores data and an empty status indicating that the register file stores no data, and a controller configured to receive the data read request from the reader or the data write request from the writer, and to process the received data read request or the received data write request while stalling or releasing the reader or the writer according to whether the register file is in the full status or in the empty status and according to an operating status of the reader or the writer.

摘要翻译： 提供了一种用于线程同步的方法和装置。 用于线程同步的装置包括被配置为产生数据读取请求的读取器，被配置为生成数据写入请求的写入器，被配置为具有指示该寄存器文件存储数据的完整状态的寄存器文件以及指示该寄存器 文件不存储数据，并且控制器被配置为从读取器接收数据读取请求或来自写入器的数据写入请求，并且在停止或释放读取器或写入器的同时处理接收的数据读取请求或接收的数据写入请求 根据注册文件是处于完整状态还是处于空状态，并根据读写器的操作状态。

公开(公告)号：US20110303290A1

公开(公告)日：2011-12-15

申请号：US13158490

申请日：2011-06-13

申请人： Bo-Yun JANG ,  Jin-Seok LEE ,  Young-Soo AHN

发明人： Bo-Yun JANG ,  Jin-Seok LEE ,  Young-Soo AHN

IPC分类号： H01L31/0264 ,  H01L31/02 ,  C03B19/02 ,  C03B5/23 ,  C01B33/00

CPC分类号： C30B15/007 ,  C30B15/06 ,  C30B15/14 ,  C30B29/06

摘要： The present disclosure provides a method and apparatus for manufacturing a silicon substrate using inert gas blowing during continuous casting to provide excellent productivity and surface quality. The apparatus includes a raw silicon feeder through which raw silicon is fed, a silicon melting unit disposed under the raw silicon feeder and melting the raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer unit transferring the silicon melt tapped from the molten silicon storage unit, and a cooling unit cooling the silicon melt transferred by the transfer unit. Here, the cooling unit cools the silicon melt by blowing inert gas at a rate of 0.1˜2.5 Nm3/h.

摘要翻译： 本公开提供了一种用于在连续铸造期间使用惰性气体吹制制造硅衬底以提供优异的生产率和表面质量的方法和装置。 该装置包括：原料硅供给装置，通过原料硅供给装置配置的硅熔融单元，熔融原料硅以形成熔融硅;熔融硅储存单元，储存从硅熔融单元供给的熔融硅;以及 点击熔融硅以提供具有恒定厚度的硅熔体，转移单元，转移从熔融硅储存单元抽出的硅熔体;以及冷却单元，冷却由转印单元转移的硅熔体。 这里，冷却单元通过以0.1〜2.5Nm 3 / h的速度吹入惰性气体来冷却硅熔体。