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    Semiconductor memory devices with mismatch cells
    1.
    发明申请
    Semiconductor memory devices with mismatch cells 有权
    具有不匹配单元的半导体存储器件

    公开(公告)号：US20100118631A1

    公开(公告)日：2010-05-13

    申请号：US12591196

    申请日：2009-11-12

    申请人： Jin-Young Kim ,  Chul-Woo Park ,  Ki-Whan Song

    发明人： Jin-Young Kim ,  Chul-Woo Park ,  Ki-Whan Song

    IPC分类号： G11C7/00 ,  G11C7/06

    CPC分类号： G11C11/4099 ,  G11C11/4091

    摘要： A semiconductor memory device having the mismatch cell makes a capacitance difference between a bit line pair relatively large during a read operation using at least one dummy memory cell as a mismatch cell selected together with a corresponding memory cell. Therefore, data of a semiconductor memory device may be detected more easily.

    摘要翻译： 具有不匹配单元的半导体存储器件在使用至少一个虚拟存储器单元作为与对应的存储器单元一起选择的不匹配单元的读取操作期间，位线对之间的电容差相对较大。 因此，可以更容易地检测半导体存储器件的数据。

    Semiconductor memory devices with mismatch cells
    2.
    发明授权
    Semiconductor memory devices with mismatch cells 有权
    具有不匹配单元的半导体存储器件

    公开(公告)号：US08199592B2

    公开(公告)日：2012-06-12

    申请号：US12591196

    申请日：2009-11-12

    申请人： Jin-Young Kim ,  Chul-Woo Park ,  Ki-Whan Song

    发明人： Jin-Young Kim ,  Chul-Woo Park ,  Ki-Whan Song

    IPC分类号： G11C7/00

    CPC分类号： G11C11/4099 ,  G11C11/4091

    摘要： A semiconductor memory device having the mismatch cell makes a capacitance difference between a bit line pair relatively large during a read operation using at least one dummy memory cell as a mismatch cell selected together with a corresponding memory cell. Therefore, data of a semiconductor memory device may be detected more easily.

    摘要翻译： 具有不匹配单元的半导体存储器件在使用至少一个虚拟存储器单元作为与对应的存储器单元一起选择的不匹配单元的读取操作期间，位线对之间的电容差相对较大。 因此，可以更容易地检测半导体存储器件的数据。

    Method of refreshing a memory device, refresh address generator and memory device
    4.
    发明授权
    Method of refreshing a memory device, refresh address generator and memory device 有权
    刷新存储器件，刷新地址发生器和存储器件的方法

    公开(公告)号：US08873324B2

    公开(公告)日：2014-10-28

    申请号：US13240049

    申请日：2011-09-22

    申请人： Chul-Woo Park ,  Joo-Sun Choi ,  Hong-Sun Hwang

    发明人： Chul-Woo Park ,  Joo-Sun Choi ,  Hong-Sun Hwang

    IPC分类号： G11C7/00

    CPC分类号： G11C11/40618 ,  G11C11/40622 ,  G11C11/408

    摘要： A refresh address is generated with a refresh period for refreshing a memory device with refresh leveraging. A respective refresh is performed on a weak cell having a first address when the refresh address is a second address instead of on a first strong cell having the second address. A respective refresh is performed on one of the first strong cell or a second strong cell having a third address when the refresh address is the third address. Address information is stored for only one of the first, second, and third addresses such that memory capacity may be reduced. In alternative aspects, a respective refresh is performed on one of a weak cell, a first strong cell, or a second strong cell depending on a flag when the refresh address is any of at least one predetermined address to result in refresh leveraging.

    摘要翻译： 生成具有刷新周期的刷新地址，以刷新刷新的存储器件。 当刷新地址是第二地址而不是具有第二地址的第一强单元时，对具有第一地址的弱小区执行相应的刷新。 当刷新地址是第三地址时，在具有第三地址的第一强单元或第二强单元之一上执行相应的刷新。 仅对第一，第二和第三地址中的一个存储地址信息，从而可以减少存储容量。 在替代方面，当刷新地址是至少一个预定地址中的任一个以导致刷新利用时，依赖于标志，在弱小区，第一强小区或第二强小区中的一个上执行相应的刷新。

    Semiconductor memory device including vertical channel transistors
    5.
    发明授权
    Semiconductor memory device including vertical channel transistors 有权
    半导体存储器件包括垂直沟道晶体管

    公开(公告)号：US08830715B2

    公开(公告)日：2014-09-09

    申请号：US13304851

    申请日：2011-11-28

    申请人： Hak-Soo Yu ,  Su-A Kim ,  Hong-Sun Hwang ,  Chul-Woo Park

    发明人： Hak-Soo Yu ,  Su-A Kim ,  Hong-Sun Hwang ,  Chul-Woo Park

    IPC分类号： G11C5/02 ,  G11C11/34 ,  H01L27/108 ,  G11C7/02 ,  G11C7/06

    CPC分类号： G11C7/02 ,  G11C7/062 ,  H01L27/10882 ,  H01L27/10885 ,  H01L27/10891 ,  H01L27/10897

    摘要： A semiconductor memory device is disclosed. The semiconductor memory device includes a memory array block, a first word line and a second word line. The memory array block includes a plurality of adjacent columns of memory cells, each column of memory cells including a plurality of consecutive memory cells having a plurality of respective consecutive cell transistors that comprise at least a first group of cell transistors and a second group of cell transistors. The first word line is disposed above the plurality of respective consecutive cell transistors and electrically connected to the first group of cell transistors, and the second word line is disposed below the plurality of respective consecutive cell transistors and electrically connected to the second group of cell transistors.

    摘要翻译： 公开了一种半导体存储器件。 半导体存储器件包括存储器阵列块，第一字线和第二字线。 存储器阵列块包括多个相邻列的存储器单元，每列存储器单元包括多个连续的存储单元，其具有多个相应的连续单元晶体管，其包括至少第一组单元晶体管和第二组单元 晶体管。 第一字线设置在多个相应的连续单元晶体管的上方并电连接到第一组单元晶体管，第二字线设置在多个相应的连续单元晶体管的下方，并电连接到第二组单元晶体管 。

    Method of Refreshing a Memory Device, Refresh Address Generator and Memory Device
    6.
    发明申请
    Method of Refreshing a Memory Device, Refresh Address Generator and Memory Device 有权
    刷新存储器件，刷新地址生成器和存储器件的方法

    公开(公告)号：US20120300568A1

    公开(公告)日：2012-11-29

    申请号：US13240049

    申请日：2011-09-22

    申请人： Chul-Woo Park ,  Joo-Sun Choi ,  Hong-Sun Hwang

    发明人： Chul-Woo Park ,  Joo-Sun Choi ,  Hong-Sun Hwang

    IPC分类号： G11C11/402

    CPC分类号： G11C11/40618 ,  G11C11/40622 ,  G11C11/408

    摘要： A refresh address is generated with a refresh period for refreshing a memory device with refresh leveraging. A respective refresh is performed on a weak cell having a first address when the refresh address is a second address instead of on a first strong cell having the second address. A respective refresh is performed on one of the first strong cell or a second strong cell having a third address when the refresh address is the third address. Address information is stored for only one of the first, second, and third addresses such that memory capacity may be reduced. In alternative aspects, a respective refresh is performed on one of a weak cell, a first strong cell, or a second strong cell depending on a flag when the refresh address is any of at least one predetermined address to result in refresh leveraging.

    摘要翻译： 生成具有刷新周期的刷新地址，以刷新刷新的存储器件。 当刷新地址是第二地址而不是具有第二地址的第一强单元时，对具有第一地址的弱小区执行相应的刷新。 当刷新地址是第三地址时，在具有第三地址的第一强单元或第二强单元之一上执行相应的刷新。 仅对第一，第二和第三地址中的一个存储地址信息，从而可以减少存储容量。 在替代方面，当刷新地址是至少一个预定地址中的任一个以导致刷新利用时，依赖于标志，在弱小区，第一强小区或第二强小区中的一个上执行相应的刷新。

    Liquid crystal display device
    8.
    发明授权
    Liquid crystal display device 失效
    液晶显示装置

    公开(公告)号：US07679589B2

    公开(公告)日：2010-03-16

    申请号：US11326692

    申请日：2006-01-06

    申请人： Chul-Woo Park

    发明人： Chul-Woo Park

    IPC分类号： G09G3/36

    CPC分类号： G09G3/3696 ,  G09G3/3648 ,  G09G3/3685 ,  G09G2300/0491 ,  G09G2310/027 ,  G09G2320/0252

    摘要： The present invention relates to a liquid crystal display device with a source driver in which a significant signal delay is not generated, and which has a fast response speed. The present invention also provides a liquid crystal display device comprising a scan driver including a D/A converter for outputting analog signals corresponding to gradation data input, a triangular wave generator for outputting triangular wave signals, and a comparator for applying data voltage to each pixel which include OCB liquid crystal cells by comparing the analog signals with the triangular wave signals. The data voltage is a PWM pulse with a varied voltage width.

    摘要翻译： 本发明涉及一种具有源极驱动器的液晶显示装置，其中不产生显着的信号延迟，并具有快速的响应速度。 本发明还提供一种液晶显示装置，包括：扫描驱动器，包括用于输出对应于灰度数据输入的模拟信号的D / A转换器，用于输出三角波信号的三角波发生器;以及用于向每个像素施加数据电压的比较器 其通过将模拟信号与三角波信号进行比较来包括OCB液晶单元。 数据电压是具有不同电压宽度的PWM脉冲。

    Liquid crystal display apparatus
    9.
    发明申请
    Liquid crystal display apparatus 有权
    液晶显示装置

    公开(公告)号：US20090273728A1

    公开(公告)日：2009-11-05

    申请号：US12385972

    申请日：2009-04-24

    申请人： Young-Woo Song ,  Jong-Hyuk Lee ,  Kyu-Hwan Hwang ,  Jong-Seok Oh ,  Joon-Gu Lee ,  Jae-Heung Ha ,  Chul-Woo Park

    发明人： Young-Woo Song ,  Jong-Hyuk Lee ,  Kyu-Hwan Hwang ,  Jong-Seok Oh ,  Joon-Gu Lee ,  Jae-Heung Ha ,  Chul-Woo Park

    IPC分类号： G02F1/1335

    CPC分类号： G02F1/133536 ,  G02B5/3058 ,  G02F2001/133548 ,  G02F2201/08 ,  G02F2201/38

    摘要： A liquid crystal display apparatus includes a backlight unit, a second polarization layer, a liquid crystal layer disposed between the backlight unit and the second polarization layer, a first polarization layer disposed between the backlight unit and the liquid crystal layer. In an embodiment, a surface of the first polarization layer facing the backlight unit includes a reflective surface and a surface of the first polarization layer facing the backlight unit includes an absorbent surface. In another embodiment, the first polarization layer includes grids, which include a metal, and absorbing members, which include dielectric materials. In another embodiment, the first polarization layer includes grids, each of which includes a first component including a dielectric material and a second component including a metal.

    摘要翻译： 液晶显示装置包括背光单元，第二偏振层，设置在背光单元和第二偏振层之间的液晶层，设置在背光单元和液晶层之间的第一偏振层。 在一个实施例中，面向背光单元的第一偏振层的表面包括反射表面，并且面向背光单元的第一偏振层的表面包括吸收表面。 在另一个实施例中，第一偏振层包括包括金属的网格和包括电介质材料的吸收构件。 在另一个实施例中，第一偏振层包括格栅，每个栅格包括包括电介质材料的第一元件和包括金属的第二元件。

    PRINT HEAD INCLUDING AN ORGANIC LIGHT EMITTING DEVICE
    10.
    发明申请
    PRINT HEAD INCLUDING AN ORGANIC LIGHT EMITTING DEVICE 审中-公开
    打印头包括有机发光装置

    公开(公告)号：US20080165243A1

    公开(公告)日：2008-07-10

    申请号：US11854459

    申请日：2007-09-12

    申请人： Jong-Seok Oh ,  Jong-hyuk Lee ,  Young-Woo Song ,  Kyu-Hwan Hwang ,  Joon-Gu Lee ,  Jae-Heung Ha ,  Chul-Woo Park

    发明人： Jong-Seok Oh ,  Jong-hyuk Lee ,  Young-Woo Song ,  Kyu-Hwan Hwang ,  Joon-Gu Lee ,  Jae-Heung Ha ,  Chul-Woo Park

    IPC分类号： B41J2/45 ,  H01J1/62

    CPC分类号： B41J2/45 ,  H01L51/5203

    摘要： A print head includes a light source, a driver chip electrically connected to the light source and a lens array on the side of light irradiation of the light source. The light source includes a substrate and a plurality of organic light emitting diodes arranged in adjacent groups on the substrate. Each of the organic light emitting diodes of a group includes a first electrode, an organic emissive layer, and a second electrode. First wires on the substrate connect each first electrode to a first electrode in an adjacent group. A separator is located between the adjacent groups. A first pad on the substrate is electrically connected to each first electrode of each of the organic light emitting diodes of a first group and a plurality of second pads are located on the substrate, each second pad electrically connected to the second electrode of each group.

    摘要翻译： 打印头包括光源，电连接到光源的驱动器芯片和在光源的光照射侧的透镜阵列。 光源包括基板和布置在基板上的相邻组中的多个有机发光二极管。 组中的每个有机发光二极管包括第一电极，有机发光层和第二电极。 基板上的第一导线将每个第一电极连接到相邻组中的第一电极。 分隔物位于相邻组之间。 衬底上的第一焊盘电连接到第一组的每个有机发光二极管的每个第一电极，并且多个第二焊盘位于衬底上，每个第二焊盘电连接到每个组的第二电极。