利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

2 条记录 (耗时 0.03 秒)

    Silicon pressure micro-sensing device and the fabrication process
    1.
    发明授权
    Silicon pressure micro-sensing device and the fabrication process 失效
    硅压敏元件及其制造工艺

    公开(公告)号：US06541834B1

    公开(公告)日：2003-04-01

    申请号：US09975125

    申请日：2001-10-09

    申请人： Jin-shown Shie ,  Ji-cheng Lin ,  Chun-te Lin ,  Chih-tang Peng ,  Shih-han Yu ,  Kuo-ning Chiang

    发明人： Jin-shown Shie ,  Ji-cheng Lin ,  Chun-te Lin ,  Chih-tang Peng ,  Shih-han Yu ,  Kuo-ning Chiang

    IPC分类号： H01L2982

    CPC分类号： B81C1/00182 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/014 ,  B81C2201/016 ,  G01L9/0054

    摘要： The invention is a silicon pressure micro-sensing device and the fabrication process thereof. The silicon pressure micro-sensing device includes a pressure chamber, and is constituted of a P-type substrate with a taper chamber and an N-type epitaxial layer thereon. On the N-type epitaxial layer are a plurality of piezo-resistance sensing units which sense deformation caused by pressure. The fabrication pressure of the silicon pressure micro-sensing device includes a step of first making a plurality of holes on the N-type epitaxial layer to reach the P-type substrate beneath. Then, by an anisotropic etching stop technique, in which etchant pass through the holes, a taper chamber is formed in the P-type substrate. Finally, an insulating material is applied to seal the holes, thus attaining the silicon pressure micro-sensing device that is able to sense pressure differences between two ends thereof.

    摘要翻译： 本发明是一种硅压力微型感测装置及其制造方法。 硅压力微型感测装置包括压力室，由具有锥形室的P型衬底和其上的N型外延层构成。 在N型外延层上是感测由压力引起的变形的多个压电感测单元。 硅压力微型感测装置的制造压力包括首先在N型外延层上制造多个孔以到达下面的P型衬底的步骤。 然后，通过各向异性蚀刻停止技术，其中蚀刻剂穿过孔，在P型衬底中形成锥形室。 最后，施加绝缘材料以密封孔，从而获得能够感测其两端之间的压力差的硅压力微检测装置。