High throughput measurement of via defects in interconnects
    1.
    发明申请
    High throughput measurement of via defects in interconnects 有权
    互连中通孔缺陷的高通量测量

    公开(公告)号:US20050214956A1

    公开(公告)日:2005-09-29

    申请号:US10813407

    申请日:2004-03-29

    CPC分类号: G01N25/18 G01N25/72

    摘要: Heat is applied to a conductive structure that includes one or more vias, and the temperature at or near the point of heat application is measured. The measured temperature indicates the integrity or the defectiveness of various features (e.g. vias and/or traces) in the conductive structure, near the point of heat application. Specifically, a higher temperature measurement (as compared to a measurement in a reference structure) indicates a reduced heat transfer from the point of heat application, and therefore indicates a defect. The reference structure can be in the same die as the conductive structure (e.g. to provide a baseline) or outside the die but in the same wafer (e.g. in a test structure) or outside the wafer (e.g. in a reference wafer), depending on the embodiment.

    摘要翻译: 将热施加到包括一个或多个通孔的导电结构,并且测量在加热点处或附近的温度。 测量的温度表示导热结构中靠近加热点的各种特征(例如通路和/或迹线)的完整性或缺陷。 具体而言,较高的温度测量(与参考结构中的测量值相比)表示从热施加点减少的热传递,因此表示缺陷。 参考结构可以与导电结构(例如,提供基线)或模具外部在相同的晶片(例如,在测试结构中)或晶片外部(例如,在参考晶片中)处于相同的裸片中,这取决于 该实施例。

    Evaluating a property of a multilayered structure
    2.
    发明申请
    Evaluating a property of a multilayered structure 有权
    评估多层结构的属性

    公开(公告)号:US20050088188A1

    公开(公告)日:2005-04-28

    申请号:US10977380

    申请日:2004-10-29

    摘要: A structure having a number of traces passing through a region is evaluated by using a beam of electromagnetic radiation to illuminate the region, and generating an electrical signal that indicates an attribute of a portion (also called “reflected portion”) of the beam reflected from the region. The just-described acts of “illuminating” and “generating” are repeated in another region, followed by a comparison of the generated signals to identify variation of a property between the two regions. Such measurements can identify variations in material properties (or dimensions) between different regions in a single semiconductor wafer of the type used in fabrication of integrated circuit dice, or even between multiple such wafers. In one embodiment, the traces are each substantially parallel to and adjacent to the other, and the beam has wavelength greater than or equal to a pitch between at least two of the traces. In one implementation the beam is polarized, and can be used in several ways, including, e.g., orienting the beam so that the beam is polarized in a direction parallel to, perpendicular to, or at 45° to the traces. Energy polarized parallel to the traces is reflected by the traces, whereas energy polarized perpendicular to the traces passes between the traces and is reflected from underneath the traces. Measurements of the reflected light provide an indication of changes in properties of a wafer during a fabrication process.

    摘要翻译: 通过使用电磁辐射束照射该区域来评估具有通过区域的迹线数量的结构,并且生成指示从所述区域反射的光束的部分(也称为“反射部分”)的属性的属性的电信号 该区域。 在另一区域重复刚才描述的“照明”和“产生”的动作,随后比较生成的信号以识别两个区域之间的属性的变化。 这种测量可以识别在用于制造集成电路晶片的类型的单个半导体晶片中,或甚至在多个这样的晶片之间的不同区域之间的材料性质(或尺寸)的变化。 在一个实施例中,迹线各自基本上平行于并且彼此相邻,并且光束具有大于或等于至少两个迹线之间的间距的波长。 在一个实施例中,光束是极化的,并且可以以多种方式使用,包括例如使光束定向,使得光束在平行于垂直于或垂直于或相对于迹线成45°的方向上极化。 平行于迹线的能量被迹线反射,而垂直于迹线偏振的能量在迹线之间通过,并从迹线下方反射。 反射光的测量提供了在制造过程中晶片的性质变化的指示。

    Evaluation of openings in a dielectric layer
    3.
    发明申请
    Evaluation of openings in a dielectric layer 失效
    评估电介质层中的开口

    公开(公告)号:US20060094136A1

    公开(公告)日:2006-05-04

    申请号:US10979397

    申请日:2004-11-01

    IPC分类号: H01L21/66 H01L21/00

    摘要: A patterned dielectric layer is evaluated by measuring reflectance of a region which has openings. A heating beam may be chosen for having reflectance from an underlying conductive layer that is several times greater than absorptance, to provide a heightened sensitivity to presence of residue and/or changes in dimension of the openings. Reflectance may be measured by illuminating the region with a heating beam modulated at a preset frequency, and measuring power of a probe beam that reflects from the region at the preset frequency. Openings of many embodiments have sub-wavelength dimensions (i.e. smaller than the wavelength of the heating beam). The underlying conductive layer may be patterned into links of length smaller than the diameter of heating beam, so that the links float to a temperature higher than a corresponding temperature attained by a continuous trace that transfers heat away from the illuminated region by conduction.

    摘要翻译: 通过测量具有开口的区域的反射率来评估图案化的介电层。 加热束可以被选择为具有比吸收率大几倍的下层导电层的反射率,以提供对残留物的存在和/或开口尺寸变化的更高的灵敏度。 反射率可以通过以预设频率调制的加热光束照射该区域并测量从预设频率的区域反射的探测光束的功率来测量。 许多实施例的开口具有亚波长尺寸(即小于加热束的波长)。 底层导电层可以被图案化成长度小于加热束直径的链节,使得链节浮动到高于通过传导将热量从照射区域传递的连续迹线获得的相应温度的温度。

    Calibration as well as measurement on the same workpiece during fabrication
    4.
    发明申请
    Calibration as well as measurement on the same workpiece during fabrication 审中-公开
    在制造过程中对同一工件进行校准和测量

    公开(公告)号:US20050264806A1

    公开(公告)日:2005-12-01

    申请号:US11173665

    申请日:2005-07-02

    摘要: A method of fabricating a wafer includes forming a portion of the wafer, making a first measurement in the wafer using a first process, making a second measurement in the wafer using a second process each time the first measurement is made, using one of the first measurement and the second measurement to calibrate the other of the first measurement and the second measurement, and changing a process control parameter used in forming the portion of the wafer depending on the first measurement and on the second measurement.

    摘要翻译: 制造晶片的方法包括形成晶片的一部分,使用第一工艺在晶片中进行第一测量,使用第一测量中的第二处理在晶片中进行第二测量,使用第一测量中的一个 测量和第二测量以校准第一测量和第二测量中的另一个,并且根据第一测量和第二测量改变在形成晶片的部分中使用的过程控制参数。

    Evaluating sidewall coverage in a semiconductor wafer

    公开(公告)号:US20050099190A1

    公开(公告)日:2005-05-12

    申请号:US10996194

    申请日:2004-11-22

    CPC分类号: G01N21/55 G01R31/307

    摘要: A sidewall or other feature in a semiconductor wafer is evaluated by illuminating the wafer with at least one beam of electromagnetic radiation, and measuring intensity of a portion of the beam reflected by the wafer. Change in reflectance between measurements provides a measure of a property of the feature. The change may be either a decrease in reflectance or an increase in reflectance, depending on the embodiment. A single beam may be used if it is polarized in a direction substantially perpendicular to a longitudinal direction of the sidewall. A portion of the energy of the beam is absorbed by the sidewall, thereby to cause a decrease in reflectance when compared to reflectance by a flat region. Alternatively, two beams may be used, of which a first beam applies heat to the feature itself or to a region adjacent to the feature, and a second beam is used to measure an increase in reflectance caused by an elevation in temperature due to heat transfer through the feature. The elevation in temperature that is measured can be either of the feature itself, or of a region adjacent to the feature.

    DETECTION OF SUBSTRATE WARPING DURING RAPID THERMAL PROCESSING
    7.
    发明申请
    DETECTION OF SUBSTRATE WARPING DURING RAPID THERMAL PROCESSING 有权
    在快速热处理过程中检测基板的温度

    公开(公告)号:US20120308215A1

    公开(公告)日:2012-12-06

    申请号:US13153135

    申请日:2011-06-03

    申请人: Jiping Li

    发明人: Jiping Li

    IPC分类号: F27D11/12

    摘要: Apparatus and methods for detecting substrate warping during RTP processing are provided. In one embodiment, one or more beams of light are provided above and across the substrate being processed. In this embodiment, the amount of beam blockage correlates to the amount of substrate warping. In another embodiment, a beam of light is reflected off of a substrate during processing. In this embodiment, the amount of movement of the beam correlates to the amount of substrate warping. In yet another embodiment, a region of a substrate is illuminated during processing. In this embodiment, images of the illuminated region are analyzed to determine the amount of substrate warping.

    摘要翻译: 提供了用于在RTP处理期间检测基板翘曲的装置和方法。 在一个实施例中,一个或多个光束被提供在被处理的衬底之上和之上。 在该实施例中,光束阻塞的量与基板翘曲的量相关。 在另一个实施例中,在处理期间,光束被从衬底反射出来。 在该实施例中,光束的移动量与基板翘曲量相关。 在另一个实施例中,衬底的区域在处理期间被照亮。 在该实施例中,分析照明区域的图像以确定基板翘曲的量。

    Defect-free junction formation using laser melt annealing of octadecaborane self-amorphizing implants
    8.
    发明授权
    Defect-free junction formation using laser melt annealing of octadecaborane self-amorphizing implants 有权
    使用十八硼烷自身无定形植入物的激光熔融退火的无缺陷结形成

    公开(公告)号:US08067302B2

    公开(公告)日:2011-11-29

    申请号:US12563746

    申请日:2009-09-21

    申请人: Jiping Li

    发明人: Jiping Li

    IPC分类号: H01L21/26

    摘要: A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then melted, resolidified, and annealed to completely dissociate and activate the boron clusters.

    摘要翻译: 一种用硼簇植入半导体衬底的方法和装置。 通过等离子体浸渍或离子束注入,注入十八硼烷衬底。 然后将衬底表面熔化,重新固化和退火,以完全解离并活化硼簇。

    METHOD AND BASE STATION FOR SENDING INFORMATION
    9.
    发明申请
    METHOD AND BASE STATION FOR SENDING INFORMATION 有权
    发送信息的方法和基站

    公开(公告)号:US20110212742A1

    公开(公告)日:2011-09-01

    申请号:US13106272

    申请日:2011-05-12

    申请人: De CHEN Jiping Li

    发明人: De CHEN Jiping Li

    IPC分类号: H04W24/04

    摘要: The present invention relates to mobile communication technologies, and in particular, to a method, base station and system for sending information. The method includes: obtaining discontinuous reception (DRX) parameter of a terminal; determining discontinuous transmission (DTX) parameter of the base station according to the DRX parameter; and sending pilot and broadcast information periodically according to the DTX parameter. The technical solution under the present invention saves time-frequency resources, reduces interference on neighboring cells, and saves electric power.

    摘要翻译: 本发明涉及移动通信技术,特别涉及用于发送信息的方法,基站和系统。 该方法包括:获得终端的不连续接收(DRX)参数; 根据DRX参数确定基站的不连续传输(DTX)参数; 并根据DTX参数定期发送导频和广播信息。 本发明的技术方案节省了时间频率资源,减少了对相邻小区的干扰,节省了电力。