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    Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates
    2.
    发明授权
    Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates 有权
    在低温和高沉积速率下生长纯纳米晶金刚石薄膜的方法

    公开(公告)号：US07556982B2

    公开(公告)日：2009-07-07

    申请号：US10892736

    申请日：2004-07-15

    申请人： John A. Carlisle ,  Dieter M. Gruen ,  Orlando Auciello ,  Xingcheng Xiao

    发明人： John A. Carlisle ,  Dieter M. Gruen ,  Orlando Auciello ,  Xingcheng Xiao

    IPC分类号： H01L21/00

    CPC分类号： C23C16/274 ,  C23C16/277 ,  Y10T428/30

    摘要： A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500° C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 1010sites/cm2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500° C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500° C.-4 hours or less onto a variety of substrates such as MEMS devices.

    摘要翻译： 在衬底温度小于约500℃下以不小于约0.2微米/小时的速度在衬底上沉积纳米晶金刚石膜的方法。该方法包括将纳米晶体金刚石粉末的衬底表面接种到不是 小于约1010sites / cm2，并且使接种的底物表面与约99体积％的除氦之外的惰性气体和约1体积％的甲烷或氢气以及一种或多种乙炔，富勒烯和蒽的惰性气体接触 微波诱导的等离子体的存在，同时保持衬底温度低于约500℃，以不小于约0.2微米/小时的速率将纳米晶体金刚石沉积在接种的衬底表面上。 平均粒径小于约20纳米的纳米晶体金刚石的涂层可以以500℃-4小时以下的热预算沉积到诸如MEMS器件的各种基板上。

    Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries
    6.
    发明申请
    Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries 审中-公开
    生长碳纳米薄膜的方法，其全部由尺寸为3-5nm的金刚石颗粒和高能量晶界组成

    公开(公告)号：US20060127300A1

    公开(公告)日：2006-06-15

    申请号：US11350005

    申请日：2006-02-08

    申请人： John Carlisle ,  Orlando Auciello ,  James Birrell

    发明人： John Carlisle ,  Orlando Auciello ,  James Birrell

    IPC分类号： C01B31/06

    CPC分类号： C23C16/274 ,  C23C16/277 ,  C23C16/279

    摘要： An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

    摘要翻译： 具有3至5纳米（nm）平均晶粒尺寸和不超过约8体积％的平均晶粒尺寸大于10nm的金刚石的超微晶金刚石（UNCD）。 还公开了一种制造UNCD膜的方法，其中除了He之外的惰性气体中的乙炔和氢气的蒸气，其中乙炔与氢的体积比大于0.35且小于0.85，余量为惰性气体的是 经受合适量的能量以使至少一些乙炔分裂，以形成平均粒径为3至5nm且不超过约8体积％的平均晶粒尺寸大于10nm的金刚石的UNCD膜。

    Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries
    7.
    发明申请
    Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries 有权
    生长碳纳米薄膜的方法，其全部由尺寸为3-5nm的金刚石颗粒和高能量晶界组成

    公开(公告)号：US20050042161A1

    公开(公告)日：2005-02-24

    申请号：US10845867

    申请日：2004-05-13

    申请人： John Carlisle ,  Orlando Auciello ,  James Birrell

    发明人： John Carlisle ,  Orlando Auciello ,  James Birrell

    IPC分类号： C01B31/06 ,  C23C16/27

    CPC分类号： C23C16/274 ,  C23C16/277 ,  C23C16/279

    摘要： An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

    摘要翻译： 具有3至5纳米（nm）平均晶粒尺寸和不超过约8体积％的平均晶粒尺寸大于10nm的金刚石的超微晶金刚石（UNCD）。 还公开了一种制造UNCD膜的方法，其中除了He之外的惰性气体中的乙炔和氢气的蒸气，其中乙炔与氢的体积比大于0.35且小于0.85，余量为惰性气体的是 经受合适量的能量以使至少一些乙炔分裂，以形成平均粒径为3至5nm且不超过约8体积％的平均晶粒尺寸大于10nm的金刚石的UNCD膜。

    Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices
    8.
    发明授权
    Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices 有权
    用于MEMS和其他器件的金刚石微结构的纳米晶金刚石膜的图案化

    公开(公告)号：US06811612B2

    公开(公告)日：2004-11-02

    申请号：US10169879

    申请日：2002-11-08

    申请人： Dieter M. Gruen ,  Hans-Gerd Busmann ,  Eva-Maria Meyer ,  Orlando Auciello ,  Alan R. Krauss

    发明人： Dieter M. Gruen ,  Hans-Gerd Busmann ,  Eva-Maria Meyer ,  Orlando Auciello ,  Alan R. Krauss

    IPC分类号： C30B2304

    CPC分类号： C30B33/00 ,  B81B3/0035 ,  C30B29/605

    摘要： MEMS structure and a method of fabricating them from ultrananocrystalline diamond films having average grain sizes of less than about 10 nm and feature resolution of less than about one micron . The MEMS structures are made by contacting carbon dimer species with an oxide substrate forming a carbide layer on the surface onto which ultrananocrystalline diamond having average grain sizes of less than about 10 nm is deposited. Thereafter, microfabrication process are used to form a structure of predetermined shape having a feature resolution of less than about one micron.

    摘要翻译： MEMS结构以及由平均晶粒尺寸小于约10nm并具有小于约1微米的特征分辨率的超晶体金刚石膜制造它们的方法。 通过使碳二聚物与在其上沉积有平均粒径小于约10nm的超微晶金刚石的表面上形成碳化物层的氧化物基底接触来制造MEMS结构。 此后，使用微细加工工艺形成具有小于约1微米的特征分辨率的预定形状的结构。

    Sputter deposition for multi-component thin films
    9.
    发明授权
    Sputter deposition for multi-component thin films 失效
    多组分薄膜的溅射沉积

    公开(公告)号：US4923585A

    公开(公告)日：1990-05-08

    申请号：US266196

    申请日：1988-11-02

    申请人： Alan R. Krauss ,  Orlando Auciello

    发明人： Alan R. Krauss ,  Orlando Auciello

    IPC分类号： C23C14/04 ,  C23C14/46 ,  C23C14/54

    CPC分类号： C23C14/54 ,  C23C14/042 ,  C23C14/46 ,  Y10S505/786

    摘要： Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

    摘要翻译： 使用单个离子束和多组分靶的离子束溅射诱导沉积能够可再现地产生任意组成的薄膜，包括接近化学计量的薄膜。 该溅射沉积方法使用石英晶体沉积监测器和计算机控制的聚焦良好的离子束，能够生产超晶格型金属氧化物超导体和半导体，例如GaAs-AlGaAs以及层状金属/氧化物/半导体/ 超导体结构。 通过根据已知的溅射产率和每种材料的所需层厚来编程每个靶的停留时间，可以将来自良好控制的亚单层的复合膜沉积到仅由可用的沉积时间确定的厚度。 在一个实施例中，离子束通过一组X-Y静电偏转板顺序指向三个或更多个不同元素或化合物靶，其是所需膜的成分。 在另一个实施例中，离子束被引导通过沉积板中的孔，并在计算机控制下移位，以提供对沉积层的高度控制。 在另一个实施例中，单个固定离子束以顺序方式被引导到多个溅射靶上，其中目标在计算机控制下各自与光束对准地移动以形成多层薄膜。 这种受控的溅射沉积方法也可以与激光和电子束一起使用。