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    Tone inversion with partial underlayer etch for semiconductor device formation
    4.
    发明授权
    Tone inversion with partial underlayer etch for semiconductor device formation 失效
    用于半导体器件形成的部分底层蚀刻的色调反演

    公开(公告)号：US08470711B2

    公开(公告)日：2013-06-25

    申请号：US12952248

    申请日：2010-11-23

    申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

    发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

    IPC分类号： H01L21/44

    CPC分类号： H01L23/00 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.

    摘要翻译： 用于集成电路制造的色调反转的方法包括：在衬底的顶部上提供具有底层的衬底; 产生第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露位于所述底层下方的所述基板; 用一层图像反向材料（IRM）覆盖第一个图案; 并将第二图案刻蚀成衬底。 用于集成电路制造的色调反转的结构包括：衬底; 部分蚀刻的底层包括位于所述衬底上方的第一图案，所述第一图案被部分蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露 底层位于底层下方; 以及位于部分蚀刻的底层上方的图像反转材料（IRM）层。

    TONE INVERSION WITH PARTIAL UNDERLAYER ETCH
    5.
    发明申请
    TONE INVERSION WITH PARTIAL UNDERLAYER ETCH 失效
    带有部分底层蚀刻的色调

    公开(公告)号：US20120126358A1

    公开(公告)日：2012-05-24

    申请号：US12952248

    申请日：2010-11-23

    申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

    发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

    IPC分类号： H01L21/311 ,  H01L23/00 ,  H01L21/768

    CPC分类号： H01L23/00 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.

    摘要翻译： 用于集成电路制造的色调反转的方法包括：在衬底的顶部上提供具有底层的衬底; 产生第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露位于所述底层下方的所述基板; 用一层图像反向材料（IRM）覆盖第一个图案; 并将第二图案刻蚀成衬底。 用于集成电路制造的色调反转的结构包括：衬底; 部分蚀刻的底层包括位于所述衬底上方的第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露 底层位于底层下方; 以及位于部分蚀刻的底层上方的图像反转材料（IRM）层。

    SIDEWALL IMAGE TRANSFER PROCESS
    6.
    发明申请
    SIDEWALL IMAGE TRANSFER PROCESS 有权
    边框图像传输过程

    公开(公告)号：US20120244711A1

    公开(公告)日：2012-09-27

    申请号：US13069536

    申请日：2011-03-23

    申请人： Yunpeng Yin ,  John C. Arnold ,  Matthew E. Colburn ,  Sean D. Burns

    发明人： Yunpeng Yin ,  John C. Arnold ,  Matthew E. Colburn ,  Sean D. Burns

    IPC分类号： H01L21/31

    CPC分类号： H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

    摘要： An improved method of performing sidewall spacer imager transfer is presented. The method includes forming a set of sidewall spacers next to a plurality of mandrels, the set of sidewall spacers being directly on top of a hard-mask layer; transferring image of at least a portion of the set of sidewall spacers to the hard-mask layer to form a device pattern; and transferring the device pattern from the hard-mask layer to a substrate underneath the hard-mask layer.

    摘要翻译： 提出了一种执行侧壁间隔成像器传输的改进方法。 该方法包括在多个心轴旁边形成一组侧壁间隔物，该组侧壁间隔物直接位于硬掩模层的顶部上; 将所述一组侧壁间隔物的至少一部分图像转印到所述硬掩模层以形成器件图案; 并将器件图案从硬掩模层转移到硬掩模层下面的衬底。

    Mask and etch process for pattern assembly
    8.
    发明授权
    Mask and etch process for pattern assembly 有权
    掩模和蚀刻工艺用于图案组装

    公开(公告)号：US08119531B1

    公开(公告)日：2012-02-21

    申请号：US13013935

    申请日：2011-01-26

    申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Yunpeng Yin

    发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Yunpeng Yin

    IPC分类号： H01L21/311

    CPC分类号： H01L21/0337 ,  H01L21/0331

    摘要： A method of forming a trench is provided that includes providing a stack having a semiconductor layer or dielectric layer, a metal nitride layer, a leveling layer, and a first mask layer. First trenches are etched through the first mask layer and the leveling layer. The first mask layer is removed. A second mask layer is formed on the leveling layer. Second trenches are formed through the second mask layer, wherein the base of the second trenches do not extend through the metal nitride layer. The second mask layer is removed. Exposed portions of the metal nitride layer are etched selectively to the semiconductor layer and remaining portions of the leveling layer to extend the first trenches and the second trenches into contact with an upper surface of the semiconductor layer.

    摘要翻译： 提供一种形成沟槽的方法，其包括提供具有半导体层或电介质层的叠层，金属氮化物层，流平层和第一掩模层。 通过第一掩模层和流平层蚀刻第一沟槽。 第一个掩模层被去除。 在平整层上形成第二掩模层。 通过第二掩模层形成第二沟槽，其中第二沟槽的基极不延伸穿过金属氮化物层。 去除第二掩模层。 金属氮化物层的暴露部分被选择性地蚀刻到半导体层和平整层的剩余部分，以使第一沟槽和第二沟槽延伸与半导体层的上表面接触。

    Sidewall image transfer process employing a cap material layer for a metal nitride layer
    9.
    发明授权
    Sidewall image transfer process employing a cap material layer for a metal nitride layer 失效
    侧壁图像转印工艺采用金属氮化物层的盖材料层

    公开(公告)号：US08298954B1

    公开(公告)日：2012-10-30

    申请号：US13102224

    申请日：2011-05-06

    申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

    发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

    IPC分类号： H01L21/311 ,  H01L21/302

    CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76885

    摘要： A cap material layer is deposited on a metal nitride layer. An antireflective coating (ARC) layer, an organic planarizing layer (OPL), and patterned line structures are formed upon the cap material layer. The pattern in the patterned line structures is transferred into the ARC layer and the OPL. Exposed portions of the cap material layer are etched simultaneously with the etch removal of the patterned line structures and the ARC layer. The OPL is employed to etch the metal nitride layer. The patterned cap material layer located over the metal nitride layer protects the top surface of the metal nitride layer, and enables high fidelity reproduction of the pattern in the metal nitride layer without pattern distortion. The metal nitride layer is subsequently employed as an etch mask for pattern transfer into an underlying layer.

    摘要翻译： 盖材料层沉积在金属氮化物层上。 在盖材料层上形成抗反射涂层（ARC）层，有机平面化层（OPL）和图案化的线结构。 图案线结构中的图案被转移到ARC层和OPL中。 与图案化线结构和ARC层的蚀刻去除同时蚀刻盖材料层的暴露部分。 采用OPL来蚀刻金属氮化物层。 位于金属氮化物层之上的图案化盖材料层保护金属氮化物层的顶表面，并且能够在没有图案变形的情况下实现金属氮化物层中的图案的高保真度再现。 随后将金属氮化物层用作用于图案转移到下层中的蚀刻掩模。

    SIDEWALL IMAGE TRANSFER PROCESS EMPLOYING A CAP MATERIAL LAYER FOR A METAL NITRIDE LAYER
    10.
    发明申请
    SIDEWALL IMAGE TRANSFER PROCESS EMPLOYING A CAP MATERIAL LAYER FOR A METAL NITRIDE LAYER 失效
    使用金属氮化物层的CAP材料层的边框图像转移过程

    公开(公告)号：US20120282779A1

    公开(公告)日：2012-11-08

    申请号：US13102224

    申请日：2011-05-06

    申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

    发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76885

    摘要： A cap material layer is deposited on a metal nitride layer. An antireflective coating (ARC) layer, an organic planarizing layer (OPL), and patterned line structures are formed upon the cap material layer. The pattern in the patterned line structures is transferred into the ARC layer and the OPL. Exposed portions of the cap material layer are etched simultaneously with the etch removal of the patterned line structures and the ARC layer. The OPL is employed to etch the metal nitride layer. The patterned cap material layer located over the metal nitride layer protects the top surface of the metal nitride layer, and enables high fidelity reproduction of the pattern in the metal nitride layer without pattern distortion. The metal nitride layer is subsequently employed as an etch mask for pattern transfer into an underlying layer.

    摘要翻译： 盖材料层沉积在金属氮化物层上。 在盖材料层上形成抗反射涂层（ARC）层，有机平面化层（OPL）和图案化的线结构。 图案线结构中的图案被转移到ARC层和OPL中。 与图案化线结构和ARC层的蚀刻去除同时蚀刻盖材料层的暴露部分。 采用OPL来蚀刻金属氮化物层。 位于金属氮化物层之上的图案化盖材料层保护金属氮化物层的顶表面，并且能够在没有图案变形的情况下实现金属氮化物层中的图案的高保真度再现。 随后将金属氮化物层用作用于图案转移到下层中的蚀刻掩模。