公开(公告)号：US20120282779A1

公开(公告)日：2012-11-08

申请号：US13102224

申请日：2011-05-06

申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

IPC分类号： H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76885

摘要： A cap material layer is deposited on a metal nitride layer. An antireflective coating (ARC) layer, an organic planarizing layer (OPL), and patterned line structures are formed upon the cap material layer. The pattern in the patterned line structures is transferred into the ARC layer and the OPL. Exposed portions of the cap material layer are etched simultaneously with the etch removal of the patterned line structures and the ARC layer. The OPL is employed to etch the metal nitride layer. The patterned cap material layer located over the metal nitride layer protects the top surface of the metal nitride layer, and enables high fidelity reproduction of the pattern in the metal nitride layer without pattern distortion. The metal nitride layer is subsequently employed as an etch mask for pattern transfer into an underlying layer.

摘要翻译： 盖材料层沉积在金属氮化物层上。 在盖材料层上形成抗反射涂层（ARC）层，有机平面化层（OPL）和图案化的线结构。 图案线结构中的图案被转移到ARC层和OPL中。 与图案化线结构和ARC层的蚀刻去除同时蚀刻盖材料层的暴露部分。 采用OPL来蚀刻金属氮化物层。 位于金属氮化物层之上的图案化盖材料层保护金属氮化物层的顶表面，并且能够在没有图案变形的情况下实现金属氮化物层中的图案的高保真度再现。 随后将金属氮化物层用作用于图案转移到下层中的蚀刻掩模。

公开(公告)号：US08298954B1

公开(公告)日：2012-10-30

申请号：US13102224

申请日：2011-05-06

申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76885

摘要： A cap material layer is deposited on a metal nitride layer. An antireflective coating (ARC) layer, an organic planarizing layer (OPL), and patterned line structures are formed upon the cap material layer. The pattern in the patterned line structures is transferred into the ARC layer and the OPL. Exposed portions of the cap material layer are etched simultaneously with the etch removal of the patterned line structures and the ARC layer. The OPL is employed to etch the metal nitride layer. The patterned cap material layer located over the metal nitride layer protects the top surface of the metal nitride layer, and enables high fidelity reproduction of the pattern in the metal nitride layer without pattern distortion. The metal nitride layer is subsequently employed as an etch mask for pattern transfer into an underlying layer.

摘要翻译： 盖材料层沉积在金属氮化物层上。 在盖材料层上形成抗反射涂层（ARC）层，有机平面化层（OPL）和图案化的线结构。 图案线结构中的图案被转移到ARC层和OPL中。 与图案化线结构和ARC层的蚀刻去除同时蚀刻盖材料层的暴露部分。 采用OPL来蚀刻金属氮化物层。 位于金属氮化物层之上的图案化盖材料层保护金属氮化物层的顶表面，并且能够在没有图案变形的情况下实现金属氮化物层中的图案的高保真度再现。 随后将金属氮化物层用作用于图案转移到下层中的蚀刻掩模。

公开(公告)号：US08470711B2

公开(公告)日：2013-06-25

申请号：US12952248

申请日：2010-11-23

申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

IPC分类号： H01L21/44

CPC分类号： H01L23/00 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.

摘要翻译： 用于集成电路制造的色调反转的方法包括：在衬底的顶部上提供具有底层的衬底; 产生第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露位于所述底层下方的所述基板; 用一层图像反向材料（IRM）覆盖第一个图案; 并将第二图案刻蚀成衬底。 用于集成电路制造的色调反转的结构包括：衬底; 部分蚀刻的底层包括位于所述衬底上方的第一图案，所述第一图案被部分蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露 底层位于底层下方; 以及位于部分蚀刻的底层上方的图像反转材料（IRM）层。

公开(公告)号：US20120244711A1

公开(公告)日：2012-09-27

申请号：US13069536

申请日：2011-03-23

申请人： Yunpeng Yin ,  John C. Arnold ,  Matthew E. Colburn ,  Sean D. Burns

发明人： Yunpeng Yin ,  John C. Arnold ,  Matthew E. Colburn ,  Sean D. Burns

IPC分类号： H01L21/31

CPC分类号： H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

摘要： An improved method of performing sidewall spacer imager transfer is presented. The method includes forming a set of sidewall spacers next to a plurality of mandrels, the set of sidewall spacers being directly on top of a hard-mask layer; transferring image of at least a portion of the set of sidewall spacers to the hard-mask layer to form a device pattern; and transferring the device pattern from the hard-mask layer to a substrate underneath the hard-mask layer.

摘要翻译： 提出了一种执行侧壁间隔成像器传输的改进方法。 该方法包括在多个心轴旁边形成一组侧壁间隔物，该组侧壁间隔物直接位于硬掩模层的顶部上; 将所述一组侧壁间隔物的至少一部分图像转印到所述硬掩模层以形成器件图案; 并将器件图案从硬掩模层转移到硬掩模层下面的衬底。

公开(公告)号：US08883649B2

公开(公告)日：2014-11-11

申请号：US13069536

申请日：2011-03-23

申请人： Yunpeng Yin ,  John C. Arnold ,  Matthew E. Colburn ,  Sean D. Burns

发明人： Yunpeng Yin ,  John C. Arnold ,  Matthew E. Colburn ,  Sean D. Burns

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/308

CPC分类号： H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

摘要： An improved method of performing sidewall spacer imager transfer is presented. The method includes forming a set of sidewall spacers next to a plurality of mandrels, the set of sidewall spacers being directly on top of a hard-mask layer; transferring image of at least a portion of the set of sidewall spacers to the hard-mask layer to form a device pattern; and transferring the device pattern from the hard-mask layer to a substrate underneath the hard-mask layer.

摘要翻译： 提出了一种执行侧壁间隔成像器传输的改进方法。 该方法包括在多个心轴旁边形成一组侧壁间隔物，该组侧壁间隔物直接位于硬掩模层的顶部上; 将所述一组侧壁间隔物的至少一部分图像转印到所述硬掩模层以形成器件图案; 并将器件图案从硬掩模层转移到硬掩模层下面的衬底。

公开(公告)号：US20120126358A1

公开(公告)日：2012-05-24

申请号：US12952248

申请日：2010-11-23

申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

IPC分类号： H01L21/311 ,  H01L23/00 ,  H01L21/768

CPC分类号： H01L23/00 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.

摘要翻译： 用于集成电路制造的色调反转的方法包括：在衬底的顶部上提供具有底层的衬底; 产生第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露位于所述底层下方的所述基板; 用一层图像反向材料（IRM）覆盖第一个图案; 并将第二图案刻蚀成衬底。 用于集成电路制造的色调反转的结构包括：衬底; 部分蚀刻的底层包括位于所述衬底上方的第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露 底层位于底层下方; 以及位于部分蚀刻的底层上方的图像反转材料（IRM）层。

公开(公告)号：US08119531B1

公开(公告)日：2012-02-21

申请号：US13013935

申请日：2011-01-26

申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Yunpeng Yin

IPC分类号： H01L21/311

CPC分类号： H01L21/0337 ,  H01L21/0331

摘要： A method of forming a trench is provided that includes providing a stack having a semiconductor layer or dielectric layer, a metal nitride layer, a leveling layer, and a first mask layer. First trenches are etched through the first mask layer and the leveling layer. The first mask layer is removed. A second mask layer is formed on the leveling layer. Second trenches are formed through the second mask layer, wherein the base of the second trenches do not extend through the metal nitride layer. The second mask layer is removed. Exposed portions of the metal nitride layer are etched selectively to the semiconductor layer and remaining portions of the leveling layer to extend the first trenches and the second trenches into contact with an upper surface of the semiconductor layer.

摘要翻译： 提供一种形成沟槽的方法，其包括提供具有半导体层或电介质层的叠层，金属氮化物层，流平层和第一掩模层。 通过第一掩模层和流平层蚀刻第一沟槽。 第一个掩模层被去除。 在平整层上形成第二掩模层。 通过第二掩模层形成第二沟槽，其中第二沟槽的基极不延伸穿过金属氮化物层。 去除第二掩模层。 金属氮化物层的暴露部分被选择性地蚀刻到半导体层和平整层的剩余部分，以使第一沟槽和第二沟槽延伸与半导体层的上表面接触。

公开(公告)号：US08916337B2

公开(公告)日：2014-12-23

申请号：US13402068

申请日：2012-02-22

申请人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

IPC分类号： G03F7/26

CPC分类号： H01L23/5226 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00

摘要： A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.

摘要翻译： 在互连级介质层上的第一金属硬掩模层用线图案图案化。 在第一金属硬掩模层上方施加至少一个介电材料层，第二金属硬掩模层，第一有机平坦化层（OPL）和第一光致抗蚀剂。 第一通孔图案从第一光致抗蚀剂层转移到第二金属硬掩模层中。 第二OPL和第二光致抗蚀剂被施加和图案化，第二通孔图案被转移到第二金属硬掩模层中。 第一和第二通孔图案的第一复合图案被转移到至少一个介电材料层中。 将第一复合图案与第一金属硬掩模层中的开口的面积限制的第二复合图案被转移到互连级介质层中。

公开(公告)号：US20130216776A1

公开(公告)日：2013-08-22

申请号：US13402068

申请日：2012-02-22

申请人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

IPC分类号： B32B3/00 ,  G03F7/20

CPC分类号： H01L23/5226 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00

摘要： A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.

摘要翻译： 在互连级介质层上的第一金属硬掩模层用线图案图案化。 在第一金属硬掩模层上方施加至少一个介电材料层，第二金属硬掩模层，第一有机平坦化层（OPL）和第一光致抗蚀剂。 第一通孔图案从第一光致抗蚀剂层转移到第二金属硬掩模层中。 第二OPL和第二光致抗蚀剂被施加和图案化，第二通孔图案被转移到第二金属硬掩模层中。 第一和第二通孔图案的第一复合图案被转移到至少一个介电材料层中。 将第一复合图案与第一金属硬掩模层中的开口的面积限制的第二复合图案被转移到互连级介质层中。

公开(公告)号：US20130026639A1

公开(公告)日：2013-01-31

申请号：US13615980

申请日：2012-09-14

申请人： John C. Arnold ,  Kuang-Jung Chen ,  Matthew E. Colburn ,  Dario L. Goldfarb ,  Stefan Harrar ,  Steven J. Holmes ,  Pushkara Varanasi

发明人： John C. Arnold ,  Kuang-Jung Chen ,  Matthew E. Colburn ,  Dario L. Goldfarb ,  Stefan Harrar ,  Steven J. Holmes ,  Pushkara Varanasi

IPC分类号： H01L21/428 ,  H01L23/48

CPC分类号： H01L23/53295 ,  G03F7/091 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L2221/1021 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.

摘要翻译： 一种用于制造双镶嵌结构的方法包括提供涂覆在下面的电介质堆叠上的第一光致抗蚀剂层，将所述第一光致抗蚀剂层暴露于第一预定图案的光，将第二光致抗蚀剂层涂覆到预曝光的第一光致抗蚀剂层上， 第二光致抗蚀剂层到第二预定图案的光，任选地后曝光烘烤多层光致抗蚀剂层并显影所述光致抗蚀剂层以在光致抗蚀剂层中形成多层双镶嵌结构。