CHANNEL METHOD FOR FORMING A CAPACITOR
    7.
    发明申请
    CHANNEL METHOD FOR FORMING A CAPACITOR 审中-公开
    用于形成电容器的通道方法

    公开(公告)号:US20100177460A1

    公开(公告)日:2010-07-15

    申请号:US12726467

    申请日:2010-03-18

    IPC分类号: H01G4/008 H01G4/00

    CPC分类号: H01G9/15 H01G9/0029

    摘要: An improved method for forming a capacitor. The method includes: providing a carrier with a channel therein; providing a metal foil with a valve metal with a first dielectric on a first face of the metal foil; securing the metal foil into the channel with the first dielectric away from a channel floor; inserting an insulative material between the metal foil and each side wall of the channel; forming a cathode layer on the first dielectric between the insulative material; forming a conductive layer on the cathode layer and in electrical contact with the carrier; lap cutting the carrier parallel to the metal foil such that the valve metal is exposed; and dice cutting to form singulated capacitors.

    摘要翻译: 一种形成电容器的改进方法。 该方法包括:在其中提供具有通道的载体; 在所述金属箔的第一面上提供具有第一电介质的阀金属的金属箔; 将金属箔固定到通道中,使第一电介质远离通道底板; 在金属箔和通道的每个侧壁之间插入绝缘材料; 在绝缘材料之间的第一电介质上形成阴极层; 在阴极层上形成导电层并与载体电接触; 搭载平行于金属箔的载体,使得阀金属暴露; 和骰子切割以形成单个电容器。

    Channel Method For Forming A Capacitor
    8.
    发明申请
    Channel Method For Forming A Capacitor 有权
    形成电容器的通道方法

    公开(公告)号:US20080273291A1

    公开(公告)日:2008-11-06

    申请号:US12098593

    申请日:2008-04-07

    IPC分类号: H01G9/00

    摘要: An improved method for forming a capacitor. The method includes: providing a carrier with a channel therein; providing a metal foil with a valve metal with a first dielectric on a first face of the metal foil; securing the metal foil into the channel with the first dielectric away from a channel floor; inserting an insulative material between the metal foil and each side wall of the channel; forming a cathode layer on the first dielectric between the insulative material; forming a conductive layer on the cathode layer and in electrical contact with the carrier; lap cutting the carrier parallel to the metal foil such that the valve metal is exposed; and dice cutting to form singulated capacitors.

    摘要翻译: 一种形成电容器的改进方法。 该方法包括:在其中提供具有通道的载体; 在所述金属箔的第一面上提供具有第一电介质的阀金属的金属箔; 将金属箔固定到通道中,使第一电介质远离通道底板; 在金属箔和通道的每个侧壁之间插入绝缘材料; 在绝缘材料之间的第一电介质上形成阴极层; 在阴极层上形成导电层并与载体电接触; 搭载平行于金属箔的载体,使得阀金属暴露; 和骰子切割以形成单个电容器。

    Channel method for forming a capacitor
    9.
    发明授权
    Channel method for forming a capacitor 有权
    用于形成电容器的通道方法

    公开(公告)号:US07833292B2

    公开(公告)日:2010-11-16

    申请号:US12098593

    申请日:2008-04-07

    IPC分类号: H01G9/00

    摘要: An improved method for forming a capacitor. The method includes providing a carrier with a channel therein, providing a metal foil with a valve metal with a first dielectric on a first face of the metal foil, securing the metal foil into the channel with the first dielectric away from a channel floor, inserting an insulative material between the metal foil and each side wall of the channel, forming a cathode layer on the first dielectric between the insulative material, forming a conductive layer on the cathode layer and in electrical contact with the carrier, lap cutting the carrier parallel to the metal foil such that the valve metal is exposed, and dice cutting to form singulated capacitors.

    摘要翻译: 一种形成电容器的改进方法。 该方法包括在其中提供具有通道的载体,在金属箔的第一面上提供具有阀金属的金属箔,其具有第一电介质,将金属箔固定到通道中,使第一电介质远离通道底板,插入 在金属箔和通道的每个侧壁之间的绝缘材料,在绝缘材料之间的第一电介质上形成阴极层,在阴极层上形成导电层并与载体电接触,将载体平行于 金属箔使得金属金属暴露,并且切割切割以形成单个电容器。