Abstract:
A sensor for detecting a target matter includes a chemical sensitive layer that is operable to react when exposed to the target matter and a piezoresistive material coupled to the chemical sensitive layer. The chemical sensitive layer is configured such that the reaction of the target matter with the chemical sensitive layer creates an interfacial tension at the interface of the chemical sensitive layer and the piezoresistive material that changes the electrical resistance of the piezoresistive material. However, the chemical sensitive layer is configured such that the reaction of the target matter with the chemical sensitive layer does not affect the bulk properties of the chemical sensitive layer enough to change the electrical resistance of the piezoresistive material. The sensor also includes an electrical circuit coupled to the piezoresistive material that is operable to detect the change in the electrical resistance of the piezoresistive material due to the interfacial tension.
Abstract:
A center region of conductive material/s may be disposed or “sandwiched” between transition regions of relatively lower conductivity materials to provide substantially low defect density interfaces for the sandwiched material. The center region and surrounding transition regions may in turn be disposed or sandwiched between dielectric insulative material to form a sandwiched and transitioned device structure. The center region of such a sandwiched structure may be implemented, for example, as a device layer such as conductive microbolometer layer for a microbolometer detector structure.
Abstract:
Optically transitioning pixel-level filtering using a multi-level structure that includes an isolated optically transitioning filter element that is suspended over a corresponding radiation detector element in a one-to-one relationship to provide, for example, one or more features such as spectral detection and/or selective radiation immunity.
Abstract:
Methods for making optically blind reference pixels and systems employing the same. The reference pixels may be configured to be identical to, or substantially identical to, the active detector elements of a focal plane array assembly. The reference pixels may be configured to use the same relatively longer thermal isolation legs as the active detector pixels of the focal plane, thus eliminating joule heating differences. An optically blocking structure may be placed in close proximity directly over the reference pixels.
Abstract:
Optically transitioning pixel-level filtering using a multi-level structure that includes an isolated optically transitioning filter element that is suspended over a corresponding radiation detector element in a one-to-one relationship to provide, for example, one or more features such as spectral detection and/or selective radiation immunity.
Abstract:
Systems and methods for color correcting radiation by alternately focusing a first radiation spectrum on a first radiation spectrum detector, and then focusing at least one additional radiation spectrum on at least one additional radiation spectrum detector.
Abstract:
Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.
Abstract:
Systems and methods for solder bonding that employ an equilibrium solidification process in which the solder is solidified by dissolving and alloying metals that raise the melting point temperature of the solder. Two or more structure surfaces may be solder bonded, for example, by employing heating to melt the solder and holding the couple at a temperature above the initial solder melting point of the solder until interdiffusion reduces the volume fraction of liquid so as to form a solid bond between surfaces before cooling to below the initial melting point of the solder.
Abstract:
Systems and methods for bonding semiconductor devices and/or multiple wafers, in the form of a first segmented wafer and a second unsegmented wafer which may have different temperature coefficients of expansion (TCE), and which may be bonded together, with or without the presence of a vacuum.
Abstract:
A method for manufacturing optically-transparent lids includes etching sub-wavelength structures on a surface of a lid wafer. The structures may be arrayed in a hexagonally closed-packed pattern.