Abstract:
A center region of conductive material/s may be disposed or “sandwiched” between transition regions of relatively lower conductivity materials to provide substantially low defect density interfaces for the sandwiched material. The center region and surrounding transition regions may in turn be disposed or sandwiched between dielectric insulative material to form a sandwiched and transitioned device structure. The center region of such a sandwiched structure may be implemented, for example, as a device layer such as conductive microbolometer layer for a microbolometer detector structure.
Abstract:
Optically transitioning pixel-level filtering using a multi-level structure that includes an isolated optically transitioning filter element that is suspended over a corresponding radiation detector element in a one-to-one relationship to provide, for example, one or more features such as spectral detection and/or selective radiation immunity.
Abstract:
Methods for making optically blind reference pixels and systems employing the same. The reference pixels may be configured to be identical to, or substantially identical to, the active detector elements of a focal plane array assembly. The reference pixels may be configured to use the same relatively longer thermal isolation legs as the active detector pixels of the focal plane, thus eliminating joule heating differences. An optically blocking structure may be placed in close proximity directly over the reference pixels.
Abstract:
Systems and methods for solder bonding that employ an equilibrium solidification process in which the solder is solidified by dissolving and alloying metals that raise the melting point temperature of the solder. Two or more structure surfaces may be solder bonded, for example, by employing heating to melt the solder and holding the couple at a temperature above the initial solder melting point of the solder until interdiffusion reduces the volume fraction of liquid so as to form a solid bond between surfaces before cooling to below the initial melting point of the solder.
Abstract:
Systems and methods for bonding semiconductor devices and/or multiple wafers, in the form of a first segmented wafer and a second unsegmented wafer which may have different temperature coefficients of expansion (TCE), and which may be bonded together, with or without the presence of a vacuum.
Abstract:
A method for manufacturing optically-transparent lids includes etching sub-wavelength structures on a surface of a lid wafer. The structures may be arrayed in a hexagonally closed-packed pattern.
Abstract:
A method for manufacturing integrated circuit device lids includes creating a lid cavity on the surface of a lid wafer, forming a sealing surface on the lid wafer that surrounds the lid cavity, and forming a trench on the lid wafer between the lid cavity and the sealing surface. The resulting structure uptakes excess sealing surface material and prevents such material from entering the lid cavity.
Abstract:
An infrared radiation emitter is provided that is capable of producing infrared radiation modulating at high frequency. The IR emitter includes a low-thermal-mass resistive membrane that is suspended by long thermal isolation arms over a substrate. The membrane is suspended over the substrate such that a resonant emitting cavity is formed between the membrane and the substrate. The low-mass, thermally isolated membrane design maximizes the temperature change induced by Joule heating of the resistive membrane and allows the emitted IR radiation to be modulated at high frequencies.
Abstract:
A center region of conductive material/s may be disposed or “sandwiched” between transition regions of relatively lower conductivity materials to provide substantially low defect density interfaces for the sandwiched material. The center region and surrounding transition regions may in turn be disposed or sandwiched between dielectric insulative material to form a sandwiched and transitioned device structure. The center region of such a sandwiched structure may be implemented, for example, as a device layer such as conductive microbolometer layer for a microbolometer detector structure.
Abstract:
Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects.