公开(公告)号：US09099352B2

公开(公告)日：2015-08-04

申请号：US13997615

申请日：2011-12-08

申请人： John Heck ,  Ansheng Liu ,  Brian H. Kim

发明人： John Heck ,  Ansheng Liu ,  Brian H. Kim

IPC分类号： H01L21/66 ,  G01B11/14 ,  H01L23/544 ,  H01L31/02 ,  H01L31/0232

CPC分类号： H01L22/12 ,  G01B11/14 ,  H01L23/544 ,  H01L31/02005 ,  H01L31/02325 ,  H01L2224/16225

摘要： Embodiments of the present disclosure describe semiconductor substrate techniques and configurations for an optical receiver. In one embodiment, a system includes a semiconductor substrate having one or more optical alignment features formed in a surface of the semiconductor substrate and an optical receiver assembly coupled with the semiconductor substrate, the optical receiver assembly including a photodetector device coupled with the surface of the semiconductor substrate, wherein the one or more optical alignment features facilitate precise optical alignment between a lens assembly and the photodetector device when the lens assembly is coupled with the semiconductor substrate using the one or more optical alignment features. Other embodiments may be described and/or claimed.

摘要翻译： 本公开的实施例描述了用于光接收机的半导体衬底技术和配置。 在一个实施例中，系统包括具有形成在半导体衬底的表面中的一个或多个光学对准特征的半导体衬底和与半导体衬底耦合的光学接收器组件，该光学接收器组件包括与 半导体衬底，其中当透镜组件使用一个或多个光学对准特征与半导体衬底耦合时，一个或多个光学对准特征有助于透镜组件和光电检测器器件之间的精确光学对准。 可以描述和/或要求保护其他实施例。

公开(公告)号：US20130273672A1

公开(公告)日：2013-10-17

申请号：US13997615

申请日：2011-12-08

申请人： John Heck ,  Ansheng Liu ,  Brian H. Kim

发明人： John Heck ,  Ansheng Liu ,  Brian H. Kim

IPC分类号： H01L21/66 ,  G01B11/14 ,  H01L23/544

CPC分类号： H01L22/12 ,  G01B11/14 ,  H01L23/544 ,  H01L31/02005 ,  H01L31/02325 ,  H01L2224/16225

摘要： Embodiments of the present disclosure describe semiconductor substrate techniques and configurations for an optical receiver. In one embodiment, a system includes a semiconductor substrate having one or more optical alignment features formed in a surface of the semiconductor substrate and an optical receiver assembly coupled with the semiconductor substrate, the optical receiver assembly including a photodetector device coupled with the surface of the semiconductor substrate, wherein the one or more optical alignment features facilitate precise optical alignment between a lens assembly and the photodetector device when the lens assembly is coupled with the semiconductor substrate using the one or more optical alignment features. Other embodiments may be described and/or claimed.

摘要翻译： 本公开的实施例描述了用于光接收机的半导体衬底技术和配置。 在一个实施例中，系统包括具有形成在半导体衬底的表面中的一个或多个光学对准特征的半导体衬底和与半导体衬底耦合的光学接收器组件，该光学接收器组件包括与 半导体衬底，其中当透镜组件使用一个或多个光学对准特征与半导体衬底耦合时，一个或多个光学对准特征有助于透镜组件和光电检测器器件之间的精确光学对准。 可以描述和/或要求保护其他实施例。

公开(公告)号：US20110315858A1

公开(公告)日：2011-12-29

申请号：US12825257

申请日：2010-06-28

申请人： John Heck ,  Ansheng Liu ,  Mario J. Paniccia

发明人： John Heck ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： G02B6/4214 ,  G02B6/422

摘要： Techniques and architectures for providing a reflective target area of an integrated circuit die assembly. In an embodiment, a reflective bevel surface of a die allows an optical signal to be received from the direction of a side surface of a die assembly for reflection into a photodetector. In another embodiment, one or more grooves in a coupling surface of the die provide respective leverage points for aligning a target area of the bevel surface with a detecting surface of the photodetector.

摘要翻译： 用于提供集成电路管芯组件的反射目标区域的技术和架构。 在一个实施例中，模具的反射斜面可允许从模组件的侧表面的方向接收光信号以反射到光电检测器中。 在另一个实施例中，模具的联接表面中的一个或多个凹槽提供相应的杠杆点，用于将斜面的目标区域与光电检测器的检测表面对准。

公开(公告)号：US08435809B2

公开(公告)日：2013-05-07

申请号：US12567601

申请日：2009-09-25

申请人： John Heck ,  Ansheng Liu ,  Michael T. Morse ,  Haisheng Rong

发明人： John Heck ,  Ansheng Liu ,  Michael T. Morse ,  Haisheng Rong

IPC分类号： H01L21/00

CPC分类号： H01L31/02327 ,  G02B6/4214

摘要： A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.

摘要翻译： 垂直全内反射（TIR）镜及其制造是通过使用晶体硅蚀刻创建入门轮廓而制成的。 从SOI晶片开始，使用深硅蚀刻来暴露掩埋氧化物层，然后将其湿法蚀刻（在HF中），打开Si器件层的底表面。 然后将该底部硅表面暴露，使得在晶体刻蚀中，所得到的形状是具有刻面的重入梯形。这些刻面可以与平面硅波导结合使用以基于TIR原理向上反射光。 或者，光可以从晶片上方耦合到硅波导中，用于诸如晶片级测试的目的。

公开(公告)号：US08530818B2

公开(公告)日：2013-09-10

申请号：US12825257

申请日：2010-06-28

申请人： John Heck ,  Ansheng Liu ,  Mario J. Paniccia

发明人： John Heck ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H03F3/08

CPC分类号： G02B6/4214 ,  G02B6/422

摘要： Techniques and architectures for providing a reflective target area of an integrated circuit die assembly. In an embodiment, a reflective bevel surface of a die allows an optical signal to be received from the direction of a side surface of a die assembly for reflection into a photodetector. In another embodiment, one or more grooves in a coupling surface of the die provide respective leverage points for aligning a target area of the bevel surface with a detecting surface of the photodetector.

摘要翻译： 用于提供集成电路管芯组件的反射目标区域的技术和架构。 在一个实施例中，模具的反射斜面可允许从模组件的侧表面的方向接收光信号以反射到光电检测器中。 在另一个实施例中，模具的联接表面中的一个或多个凹槽提供相应的杠杆点，用于将斜面的目标区域与光电检测器的检测表面对准。

公开(公告)号：US20110073972A1

公开(公告)日：2011-03-31

申请号：US12567601

申请日：2009-09-25

申请人： John Heck ,  Ansheng Liu ,  Michael T. Morse ,  Haisheng Rong

发明人： John Heck ,  Ansheng Liu ,  Michael T. Morse ,  Haisheng Rong

IPC分类号： H01L31/0232 ,  H01L21/306

CPC分类号： H01L31/02327 ,  G02B6/4214

摘要： A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.

摘要翻译： 垂直全内反射（TIR）镜及其制造是通过使用晶体硅蚀刻创建入门轮廓而制成的。 从SOI晶片开始，使用深硅蚀刻来暴露掩埋氧化物层，然后将其湿法蚀刻（在HF中），打开Si器件层的底表面。 然后将该底部硅表面暴露，使得在晶体刻蚀中，所得到的形状是具有刻面的重入梯形。这些刻面可以与平面硅波导结合使用以基于TIR原理向上反射光。 或者，光可以从晶片上方耦合到硅波导中，用于晶片级测试。

公开(公告)号：US20170336565A1

公开(公告)日：2017-11-23

申请号：US15282728

申请日：2016-09-30

申请人： Judson D. Ryckman ,  Harel Frish ,  George A. Ghiurcan ,  Ansheng Liu ,  Haisheng Rong ,  Pradeep Srinivasan ,  Carsten Brandt ,  Isako Hoshino ,  Michael A. Creighton

发明人： Judson D. Ryckman ,  Harel Frish ,  George A. Ghiurcan ,  Ansheng Liu ,  Haisheng Rong ,  Pradeep Srinivasan ,  Carsten Brandt ,  Isako Hoshino ,  Michael A. Creighton

IPC分类号： G02B6/14 ,  G02B1/115 ,  G02B6/122 ,  G02B6/136 ,  G02B6/12

CPC分类号： G02B6/14 ,  G02B1/115 ,  G02B6/1228 ,  G02B6/136 ,  G02B2006/12097 ,  G02B2006/12104 ,  G02B2006/12147 ,  G02B2006/12157

摘要： Embodiments of the present disclosure are directed toward techniques and configurations for a single mode optical coupler device. In some embodiments, the device may include a multi-stage optical taper to convert light from a first mode field diameter to a second mode field diameter larger than the first mode field diameter, and a mirror formed in a dielectric layer under an approximately 45 degree angle with respect to a plane of the dielectric layer to reflect light from the multi-stage optical taper substantially perpendicularly to propagate the light in a single mode fashion. Other embodiments may be described and/or claimed.

公开(公告)号：US20140008750A1

公开(公告)日：2014-01-09

申请号：US13977390

申请日：2012-03-29

申请人： Avi Feshali ,  Tao Sherry Yin ,  Ansheng Liu

发明人： Avi Feshali ,  Tao Sherry Yin ,  Ansheng Liu

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/0232 ,  H01L31/02325 ,  H01L31/10 ,  H01L31/102 ,  H01L31/18

摘要： Described are embodiments of apparatuses and systems including photonic devices having a conductive shunt layer, and methods for making such apparatuses and systems. A photonic device may include a device substrate, a photo-active region disposed on a first region of the device substrate, an isolation region in the device substrate, a contact disposed on a second region of the substrate such that the isolation region is located between the contact and the photo-active region, and a conductive material overlying the isolation region to shunt the first region with the second region. Other embodiments may be described and/or claimed.

摘要翻译： 描述了包括具有导电分流层的光子器件的装置和系统的实施例，以及用于制造这种装置和系统的方法。 光子器件可以包括器件衬底，设置在器件衬底的第一区域上的光有源区，器件衬底中的隔离区，设置在衬底的第二区上的接触，使得隔离区位于 所述接触和所述光活性区域以及覆盖所述隔离区域的导电材料以与所述第二区域分流所述第一区域。 可以描述和/或要求保护其他实施例。

公开(公告)号：US20120018744A1

公开(公告)日：2012-01-26

申请号：US12842341

申请日：2010-07-23

申请人： Olufemi I. Dosunmu ,  Ansheng Liu

发明人： Olufemi I. Dosunmu ,  Ansheng Liu

IPC分类号： H01L31/12 ,  H01L31/0232

CPC分类号： H01L31/02165 ,  H01L31/103

摘要： A single optical receiver having a photo-detector with a wide optical bandwidth and high efficiency within the wide optical bandwidth, the photo-detector comprising: a first diode region of first doping type for receiving light; a second diode region of second doping type and of second thickness; an active region for converting the received light to an electronic signal, the active region having a third thickness and configured to reside between the first diode region and the second diode region; and a reflector coupled to the second diode region and having a silicon layer with a fourth thickness, the silicon layer residing between silicon oxide layers of fifth thicknesses, wherein the active region is configured to absorb the light of wavelengths of less than 900 nm, and wherein the reflector is configured to reflect the light of wavelengths from a range of 1260 nm to 1380 nm.

摘要翻译： 一种单光接收器，具有宽光带宽宽光栅和光效率高的光检测器，光检测器包括：用于接收光的第一掺杂类型的第一二极管区; 第二掺杂型和第二厚度的第二二极管区; 用于将所接收的光转换成电子信号的有源区域，所述有源区域具有第三厚度并被配置为驻留在所述第一二极管区域和所述第二二极管区域之间; 以及耦合到所述第二二极管区并具有第四厚度的硅层的反射器，所述硅层位于第五厚度的氧化硅层之间，其中所述有源区被配置为吸收小于900nm的波长的光，以及 其中所述反射器被配置为将波长的光从1260nm到1380nm的范围反射。

公开(公告)号：US07747122B2

公开(公告)日：2010-06-29

申请号：US12242454

申请日：2008-09-30

申请人： Yoel Shetrit ,  Ling Liao ,  Ansheng Liu

发明人： Yoel Shetrit ,  Ling Liao ,  Ansheng Liu

IPC分类号： G02B6/10 ,  G02F1/01

CPC分类号： G02B6/12004 ,  G02B2006/12142 ,  G02F1/025 ,  G02F1/225 ,  G02F1/2257

摘要： A method and apparatus for high speed silicon optical modulation is described using a PN diode. In one example, an optical waveguide has adjoining first and second doped semiconductor regions. The first and second regions have opposite doping types and the first doped region extends in two perpendicular directions through the waveguide.

摘要翻译： 使用PN二极管描述用于高速硅光调制的方法和装置。 在一个示例中，光波导具有邻接的第一和第二掺杂半导体区域。 第一和第二区域具有相反的掺杂类型，并且第一掺杂区域在两个垂直方向上延伸穿过波导。