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1.发明授权Compact independent pressure control and vacuum isolation for a turbomolecular pumped plasma reaction chamber 失效用于涡轮分子泵浦等离子体反应室的紧凑的独立压力控制和真空隔离公开(公告)号：US06598615B1
公开(公告)日：2003-07-29
申请号：US09708345
申请日：2000-11-07
IPC分类号： C23C1650
CPC分类号： H01J37/32834 , Y10T137/0396 , Y10T137/86083 , Y10T137/86163
摘要： A method and apparatus for use in conjunction with a plasma reaction chamber provide both throttling functionality and independent vacuum isolation for a turbomolecular pump. A throttle valve provides for precise reaction chamber pressure regulation, and a gate valve prevents extended exposure of the turbomolecular pump to atmospheric conditions during cleaning or other maintenance operations. The throttle valve and the gate valve may be actuated independently.
摘要翻译： 与等离子体反应室一起使用的方法和装置为涡轮分子泵提供节流功能和独立的真空隔离。 节流阀提供精确的反应室压力调节，并且闸阀防止在清洁或其他维护操作期间涡轮分子泵在大气条件下的长时间暴露。 节流阀和闸阀可独立地致动。
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公开(公告)号：US20070079936A1
公开(公告)日：2007-04-12
申请号：US11445559
申请日：2006-06-02
申请人： Maocheng Li , John Holland , Patrick Leahey , Xueyu Qian , Michael Barnes , Jon Clinton , You Wang , Nianci Han
发明人： Maocheng Li , John Holland , Patrick Leahey , Xueyu Qian , Michael Barnes , Jon Clinton , You Wang , Nianci Han
CPC分类号： H01P1/08 , B32B2315/02 , C04B35/63452 , C04B37/003 , C04B37/005 , C04B37/008 , C04B2237/10 , C04B2237/34 , C04B2237/341 , C04B2237/343 , C04B2237/708 , H01J37/32082 , Y10T156/10
摘要： A bonded multi-layer RF window may include an external layer of dielectric material having desired thermal properties, an internal layer of dielectric material exposed to plasma inside a reaction chamber, and an intermediate layer of bonding material between the external layer and the internal layer. Heat produced by the chemical reaction inside the chamber and by the transmission of RF energy through the window may be conducted from the internal layer to the external layer, which may be cooled during a semiconductor wafer manufacturing process. A bonded multi-layer RF window may include cooling conduits for circulating coolant to facilitate cooling of the internal layer; additionally or alternatively, gas distribution conduits and gas injection apertures may be included for delivering one or more process gases into a reaction chamber. A system including a plasma reaction chamber may employ the inventive bonded multi-layer RF window.
摘要翻译： 键合的多层RF窗可以包括具有期望的热性质的外部介电材料层，暴露于反应室内的等离子体的介电材料的内部层，以及外层和内层之间的接合材料的中间层。 通过室内的化学反应和通过窗口的RF能量传递产生的热量可以从内层传导到外层，其可在半导体晶片制造过程中被冷却。 粘合的多层RF窗可以包括用于循环冷却剂以便于冷却内层的冷却管道; 另外或替代地，可以包括气体分配管道和气体注入孔，用于将一个或多个处理气体输送到反应室中。 包括等离子体反应室的系统可以采用本发明的结合的多层RF窗口。
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公开(公告)号：US07011039B1
公开(公告)日：2006-03-14
申请号：US09611817
申请日：2000-07-07
IPC分类号： H01L21/00
CPC分类号： H01J37/32834 , H01J37/321 , H01J37/32477
摘要： A multi-purpose chamber that can be configured for a variety of processes, including deposition processes and etch processes, for example, by installing one or more removable chamber liners. The multi-purpose chamber provides uniform plasma confinement around a substrate disposed in the chamber for various processing conditions. The multi-purpose chamber also provides efficient and uniform exhaust of processing gas from the chamber.
摘要翻译： 可以例如通过安装一个或多个可拆卸的室衬套来配置用于各种工艺，包括沉积工艺和蚀刻工艺的多功能室。 多用途室在各种处理条件下，在设置在腔室中的基板周围提供均匀的等离子体约束。 多用途室还提供来自腔室的处理气体的高效均匀排气。
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公开(公告)号：US06893533B2
公开(公告)日：2005-05-17
申请号：US10697893
申请日：2003-10-29
CPC分类号： H01J37/321
摘要： The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.
摘要翻译： 在一个实施例中的本发明在用于处理半导体工件的等离子体反应器中实现。 反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线 并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离 对称轴。 RF等离子体源电源连接在多个导体中的每一个上。
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公开(公告)号：US06617794B2
公开(公告)日：2003-09-09
申请号：US10016971
申请日：2001-12-14
IPC分类号： H01J724
CPC分类号： H01J37/32174 , H01J37/321
摘要： The present invention generally provides a method for processing a semiconductor substrate, wherein the method includes positioning a substrate in a processing chamber having at least a first and second coils positioned above the substrate and supplying a first electrical current to the first coil. The method further includes supplying a second current to the second coil and regulating a current ratio of electrical current supplied to the first and second coils with a power distribution network in communication with the first and second coils and a single power supply. The method may further include controlling plasma uniformity in a semiconductor processing chamber, wherein the control process includes positioning a first coil above the processing chamber, the first coil being concentrically positioned about a vertical axis of the processing chamber, and positioning a second coil above the processing chamber, the second coil being concentrically positioned about the vertical axis of the processing chamber and radially outward from the first coil. The control process may further include supplying electrical power to the first and second coils with a single power distribution network to selectively regulate a magnetic field intensity generated by the first and second coils above a workpiece in the processing chamber.
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公开(公告)号：US5589737A
公开(公告)日：1996-12-31
申请号：US354122
申请日：1994-12-06
申请人： Michael Barnes , Neil Benjamin , John Holland , Richard Beer , Robert Veltrop
发明人： Michael Barnes , Neil Benjamin , John Holland , Richard Beer , Robert Veltrop
IPC分类号： H05H1/46 , C23C16/507 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/3222 , H01J37/321 , H01J37/32238
摘要： A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.
摘要翻译： 用于大型工件的等离子体处理器包括具有多个单独支撑的电介质窗口的真空室，用于连接r.f。 来自腔室外部的腔室进入腔室以激发等离子体。 用于感应地导出场的平面线圈具有多个具有相同电长度的段，每个段具有与另一段的元件并联连接的元件。
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7.发明授权公开(公告)号：US06829056B1
公开(公告)日：2004-12-07
申请号：US10646943
申请日：2003-08-21
申请人： Michael Barnes , John Holland , Hongqing Shan , Bryan Y. Pu , Mohit Jain , Zhifeng Sui , Michael D. Armacost , Neil E. Hanson , Diana Xiaobing Ma , Ashok K. Sinha , Dan Maydan
发明人： Michael Barnes , John Holland , Hongqing Shan , Bryan Y. Pu , Mohit Jain , Zhifeng Sui , Michael D. Armacost , Neil E. Hanson , Diana Xiaobing Ma , Ashok K. Sinha , Dan Maydan
IPC分类号： G01B1114
CPC分类号： H01L21/67253 , H01J37/32935 , H01L21/67069
摘要： A substrate processing apparatus has a chamber having a substrate support, gas distributor, gas energizer, and gas exhaust port. A process monitor is provided to monitor features in a first region of the substrate and generate a corresponding first signal, and to monitor features in a second region of the substrate and generate a second signal. A chamber controller receives and evaluates the first and second signals, and operates the chamber in relation to the signals. For example, the chamber controller can select a process recipe depending upon the signal values. The chamber controller can also set a process parameter at a first level in a first processing sector and at a second level in a second processing sector. The apparatus provides a closed control loop to independently monitor and control processing of features at different regions of the substrate.
摘要翻译： 基板处理装置具有具有基板支撑件，气体分配器，气体激励器和排气口的腔室。 提供过程监视器以监测衬底的第一区域中的特征并产生相应的第一信号，并且监测衬底的第二区域中的特征并产生第二信号。 室控制器接收并评估第一和第二信号，并相对于信号操作室。 例如，腔室控制器可以根据信号值选择工艺配方。 腔室控制器还可以在第一处理扇区中将处理参数设置在第一电平处，并在第二处理扇区中将第二电平设置为第二电平。 该装置提供一个闭合的控制回路以独立地监测和控制基板的不同区域处的特征的处理。
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公开(公告)号：US06507155B1
公开(公告)日：2003-01-14
申请号：US09544377
申请日：2000-04-06
申请人： Michael Barnes , John Holland , Valentin Todorov
发明人： Michael Barnes , John Holland , Valentin Todorov
IPC分类号： H01J724
CPC分类号： H01J37/32174 , H01J37/321
摘要： Method and apparatus for distributing power from a single power source to a plurality of coils disposed on a processing chamber which provides controllable plasma uniformity across a substrate disposed in the processing chamber. The apparatus for distributing power from a power source to two or more coils disposed on a process chamber comprises a connection between the power source and a first coil, a series capacitor connected between the power source and the second coil, and a shunt capacitor connected to a node between the second coil and the power source. The method for distributing power from one power source to a plurality of coils comprises connecting a first coil between the power source and a ground connection, connecting a first power distribution network to the power source, wherein each power distribution network comprises a series capacitor and a shunt capacitor, and connecting a second coil between the first power distribution network and a ground connection.
摘要翻译： 用于将功率从单个电源分配到设置在处理室上的多个线圈的方法和装置，其在布置在处理室中的衬底上提供可控的等离子体均匀性。 用于从电源将功率分配到设置在处理室上的两个或更多个线圈的装置包括电源和第一线圈之间的连接，连接在电源和第二线圈之间的串联电容器以及连接到 第二线圈和电源之间的节点。 用于从一个电源向多个线圈分配电力的方法包括将电源和接地连接之间的第一线圈连接，将第一配电网络连接到电源，其中每个配电网络包括串联电容器和 并联电容器，并且在第一配电网络和接地连接之间连接第二线圈。
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公开(公告)号：US06414648B1
公开(公告)日：2002-07-02
申请号：US09611168
申请日：2000-07-06
IPC分类号： C23C1600
CPC分类号： H01J37/321
摘要： The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. A RF plasma source power supply is connected across each of the plural conductors. In another embodiment, the antenna is a solenoidal segmented parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric side-by-side helical solenoids, each helical solenoid being offset by a distance on the order of a conductor width of the plurality of conductors from the nearest other helical solenoids in a direction perpendicular to the axis of symmetry, whereby each helical solenoid has slightly different diameter.
摘要翻译： 在一个实施例中的本发明在用于处理半导体工件的等离子体反应器中实现。 反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线 并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离 对称轴。 RF等离子体源电源连接在多个导体中的每一个上。 在另一个实施例中，天线是覆盖天花板的螺线管分段并行导体线圈天线，并且包括缠绕在大致垂直于天花板的对称轴对称的第一多个导体，每个螺旋螺线管被偏置 在垂直于对称轴的方向上距离最近的其他螺旋螺线管的多根导体的导体宽度的数量级的距离，由此每个螺旋螺线管具有略微不同的直径。
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公开(公告)号：US06409933B1
公开(公告)日：2002-06-25
申请号：US09610800
申请日：2000-07-06
IPC分类号： H01L2100
CPC分类号： H01J37/321
摘要： The invention is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.
摘要翻译： 本发明在用于处理半导体工件的等离子体反应器中实现。 反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线 并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离 对称轴。 RF等离子体源电源连接在多个导体中的每一个上。
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