公开(公告)号：US07503983B2

公开(公告)日：2009-03-17

申请号：US12008552

申请日：2008-01-11

申请人： John M. Boyd ,  Michael L. Orbock ,  Fred C. Redeker

发明人： John M. Boyd ,  Michael L. Orbock ,  Fred C. Redeker

IPC分类号： B08B1/00

CPC分类号： H01L21/67046 ,  Y10S134/902

摘要： A wafer preparation method is provided for producing a wet region and then a corresponding dry region on the wafer. Brushing produces the wet region on the wafer. As the brushing moves in a selected scan operation across the wafer, a generating operation forms a meniscus that follows the brushing and dries the wet region. The generating operation produces the meniscus at least partially surrounding the wet region scrubbed by the scrubbing. The controlled meniscus is formed by applying fluid to the surface of the wafer and simultaneously removing the fluid. The scan operations may be selected so the brushing scrubs the wet region and then the meniscus forms the dry region where the scrubbing took place. The scan operations include a radial scan, a linear scan, a spiral scan and a raster scan.

摘要翻译： 提供晶片制备方法，用于在晶片上产生湿区域，然后产生相应的干燥区域。 刷子在晶片上产生湿区域。 当刷洗在晶片上的选择的扫描操作中移动时，产生操作形成跟随刷牙并干燥湿区域的弯液面。 生成操作产生弯液面，至少部分地围绕通过洗涤擦洗的湿区域。 受控弯液面通过将流体施加到晶片的表面并同时去除流体而形成。 可以选择扫描操作，使得刷洗擦洗湿区域，然后弯液面形成擦洗发生的干燥区域。 扫描操作包括径向扫描，线性扫描，螺旋扫描和光栅扫描。

公开(公告)号：US07353560B2

公开(公告)日：2008-04-08

申请号：US10742303

申请日：2003-12-18

申请人： John M. Boyd ,  Michael L. Orbock ,  Fred C. Redeker

发明人： John M. Boyd ,  Michael L. Orbock ,  Fred C. Redeker

IPC分类号： A47L7/00 ,  G03D5/06 ,  H01L21/00

CPC分类号： H01L21/67046 ,  Y10S134/902

摘要： An apparatus is provided for producing a wet region and corresponding dry region on a wafer. A proximity brush unit delivers fluids with a rotatable brush to produce the wet region on the wafer. As the proximity brush unit moves in a selected scan method across the wafer, a plurality of ports produces the dry region on the wafer. Further, the rotatable brush disposed within the proximity brush unit can rotate via mechanical gears or electromagnetic levitation. The selected scan method that produces the wet region and the dry region moves the proximity brush unit in a variety of methods including a radial scan, a linear scan, a spiral scan and a raster scan. To further produce a dry region during the selected scan method, the plurality of ports disposed on the surface of the proximity brush unit is on the trailing edges of the proximity head unit and the wafer.

摘要翻译： 提供了一种用于在晶片上产生湿区域和相应的干燥区域的装置。 接近刷单元用可旋转的刷子输送流体以在晶片上产生湿区域。 当接近刷单元以选定的扫描方法移动跨越晶片时，多个端口在晶片上产生干燥区域。 此外，设置在接近刷单元内的可旋转刷可以经由机械齿轮或电磁悬浮来旋转。 产生湿区域和干燥区域的选择的扫描方法以包括径向扫描，线性扫描，螺旋扫描和光栅扫描的各种方法移动接近刷单元。 为了在所选择的扫描方法期间进一步产生干燥区域，设置在接近刷单元表面上的多个端口位于邻近头单元和晶片的后缘。

公开(公告)号：US07350315B2

公开(公告)日：2008-04-01

申请号：US10745219

申请日：2003-12-22

申请人： Glenn W. Davis ,  Carl Woods ,  John Parks ,  Fred C. Redeker ,  Mike Ravkin ,  Michael L. Orbock

发明人： Glenn W. Davis ,  Carl Woods ,  John Parks ,  Fred C. Redeker ,  Mike Ravkin ,  Michael L. Orbock

IPC分类号： F26B13/30 ,  B08B5/04

CPC分类号： H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/68707

摘要： A apparatus for drying a substrate includes a vacuum manifold positioned adjacent to an edge wheel. The edge wheel includes an edge wheel groove for receiving a peripheral edge of a substrate, and the edge wheel is capable of rotating the substrate at a desired set velocity. The vacuum manifold includes a proximity end having one or more vacuum ports defined therein. The proximity end is positioned at least partially within the edge wheel groove, and using supplied vacuum removes fluids that accumulate in the edge wheel groove and prevents re-deposit of trapped fluids around the peripheral edge of the substrate.

摘要翻译： 用于干燥衬底的设备包括邻近边缘轮定位的真空歧管。 边缘轮包括用于接收基板周边的边缘轮槽，并且边缘轮能够以所需的设定速度旋转基板。 真空歧管包括具有限定在其中的一个或多个真空端口的邻近端。 邻近端部至少部分地定位在边缘轮槽内，并且使用提供的真空去除积聚在边缘轮槽中的流体并且防止捕获的流体围绕衬底的周边边缘重新沉积。

公开(公告)号：US20080271992A1

公开(公告)日：2008-11-06

申请号：US10882712

申请日：2004-06-30

申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

IPC分类号： C25D17/00

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。

公开(公告)号：US07040332B2

公开(公告)日：2006-05-09

申请号：US10377943

申请日：2003-02-28

申请人： John M. Boyd ,  Fred C. Redeker ,  Randolph E. Treur ,  William Thie

发明人： John M. Boyd ,  Fred C. Redeker ,  Randolph E. Treur ,  William Thie

IPC分类号： B08B3/12

CPC分类号： H01L21/67057 ,  B08B3/12 ,  Y10S134/902

摘要： A system for cleaning a substrate includes a tank defining an inner cavity between a base and sidewalls extending therefrom. A source of acoustic energy affixed to an outer surface of one of the sidewalls. The tank is configured to decouple a direction associated with the acoustic energy from the source of acoustic energy and direct the acoustic energy toward the substrate.

摘要翻译： 用于清洁基底的系统包括限定在基底和从其延伸的侧壁之间的内腔的罐。 声能源固定在一个侧壁的外表面上。 该箱被配置成将与声能相关联的方向与声能源分离，并将声能引导到基板。

公开(公告)号：US07645364B2

公开(公告)日：2010-01-12

申请号：US10882712

申请日：2004-06-30

申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

IPC分类号： C25D21/00

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。

公开(公告)号：US07604011B2

公开(公告)日：2009-10-20

申请号：US11670631

申请日：2007-02-02

申请人： Fred C. Redeker ,  John M. Boyd ,  John Parks

发明人： Fred C. Redeker ,  John M. Boyd ,  John Parks

IPC分类号： B08B3/12 ,  B08B7/02

CPC分类号： B08B3/12 ,  B08B7/0021 ,  H01L21/67057 ,  Y10S134/902

摘要： An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.

摘要翻译： 提供了一种使用高频声能与超临界流体来执行半导体晶片（“晶片”）清洁工艺的装置和方法。 高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。 通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。 此外，晶片清洗过程受益于近零表面张力，高扩散性，高密度和化学混合能力的超临界流体性质。

公开(公告)号：US07252097B2

公开(公告)日：2007-08-07

申请号：US10606022

申请日：2003-06-24

申请人： John M. Boyd ,  John M. de Larios ,  Michael Ravkin ,  Fred C. Redeker

发明人： John M. Boyd ,  John M. de Larios ,  Michael Ravkin ,  Fred C. Redeker

IPC分类号： B08B3/00 ,  B08B7/04

CPC分类号： H01L21/67028 ,  G03F7/70341 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

摘要： A system and method for processing a wafer includes applying a process to the wafer. The process being supported by a surface tension gradient device. A result of the process is monitored. The monitored result is output.

摘要翻译： 用于处理晶片的系统和方法包括将工艺应用于晶片。 该过程由表面张力梯度装置支撑。 监视该过程的结果。 输出监视结果。

公开(公告)号：US07191787B1

公开(公告)日：2007-03-20

申请号：US10357664

申请日：2003-02-03

申请人： Fred C. Redeker ,  John M. Boyd ,  John Parks

发明人： Fred C. Redeker ,  John M. Boyd ,  John Parks

IPC分类号： B06B3/12

CPC分类号： B08B3/12 ,  B08B7/0021 ,  H01L21/67057 ,  Y10S134/902

摘要： An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.

摘要翻译： 提供了一种使用高频声能与超临界流体来执行半导体晶片（“晶片”）清洁工艺的装置和方法。 高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。 通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。 此外，晶片清洗过程受益于近零表面张力，高扩散性，高密度和化学混合能力的超临界流体性质。

公开(公告)号：US07108591B1

公开(公告)日：2006-09-19

申请号：US10816418

申请日：2004-03-31

申请人： John M. Boyd ,  Fred C. Redeker ,  Yezdi Dordi

发明人： John M. Boyd ,  Fred C. Redeker ,  Yezdi Dordi

IPC分类号： B24B5/02 ,  B24B7/04 ,  B24B1/00

CPC分类号： B24B37/30

摘要： A semiconductor substrate support is provided. The semiconductor substrate support includes a chuck configured to change between a compliant state and a rigid state. An electromagnetic field source configured to apply an electromagnetic field to the chuck is included. The electromagnetic field causes the chuck to change from the compliant state to the rigid state. A method for supporting a semiconductor substrate and a system for cleaning a substrate and an apparatus are also provided.

摘要翻译： 提供半导体衬底支撑。 半导体衬底支撑件包括构造成在柔顺状态和刚性状态之间变化的卡盘。 包括被配置为向卡盘施加电磁场的电磁场源。 电磁场使卡盘从顺从状态转变为刚性状态。 还提供了一种用于支撑半导体衬底的方法和用于清洁衬底和装置的系统。