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公开(公告)号：US07947163B2
公开(公告)日：2011-05-24
申请号：US11890541
申请日：2007-08-06
IPC分类号： C25F3/14
CPC分类号： C25D5/022 , C25F5/00 , H05K3/07 , H05K3/108 , H05K2203/0108 , H05K2203/0392 , H05K2203/0537 , H05K2203/0713
摘要： Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.
摘要翻译： 进行选择性加速或选择性抑制金属沉积以形成电子器件的金属结构。 将所需的促进剂或抑制剂的图案施加到基材上; 例如，通过用图案化的印模冲压基板或使用喷墨打印机喷涂溶液。 在其它实施方案中，将全局加速剂或抑制剂层施加到基底上并以期望的图案选择性地修饰。 此后，进行选择性金属沉积。
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公开(公告)号：US07686935B2
公开(公告)日：2010-03-30
申请号：US11213190
申请日：2005-08-26
IPC分类号： B23H5/06
CPC分类号： C25F3/30 , H01L21/32115 , H01L21/32125 , H01L21/6715
摘要： Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure.
摘要翻译： 通过在衬底的第一部分处执行金属的阳极溶解并且用抛光垫同时机械抛光衬底的第二部分来进行衬底辅助电抛光。 阳极溶解包括在阳极底物和阴极电解抛光头之间形成电解抛光液体的薄液体层。 基板和电源之间的电触点的位置允许基板的外围边缘区域被该机械抛光。 优选地，使用各向同性材料去除技术进一步平坦化基底。 一种设备包括电抛光头，该电抛光头可移动到接近基底的第一部分的位置以形成薄间隙;以及抛光垫，其利用最小的压力机械地抛光所述基底的第二部分。
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公开(公告)号：US20090277802A1
公开(公告)日：2009-11-12
申请号：US11213190
申请日：2005-08-26
IPC分类号： B23H5/08
CPC分类号： C25F3/30 , H01L21/32115 , H01L21/32125 , H01L21/6715
摘要： Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure.
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公开(公告)号：US07560016B1
公开(公告)日：2009-07-14
申请号：US12291277
申请日：2008-11-07
IPC分类号： C25D5/02
CPC分类号： H05K3/243 , H05K3/108 , H05K2201/0367 , H05K2201/09745 , H05K2203/0392 , H05K2203/122
摘要： To make a metal feature, a non-plateable layer is applied to a workpiece surface and then patterned to form a first plating region and a first non-plating region. Then, metal is deposited on the workpiece to form a raised field region in said first plating region and a recessed region in said first non-plating region. Then, an accelerator film is applied globally on the workpiece. A portion of the accelerator film is selectively removed from the field region, and another portion of the accelerator film remains in the recessed acceleration region. Then, metal is deposited onto the workpiece, and the metal deposits at an accelerated rate in the acceleration region, resulting in a greater thickness of metal in the acceleration region compared to metal in the non-activated field region. Then, metal is completely removed from the field region, thereby forming the metal feature.
摘要翻译： 为了制造金属特征，将不可镀层施加到工件表面，然后被图案化以形成第一镀层区域和第一非镀层区域。 然后，金属沉积在工件上，以在所述第一镀覆区域中形成凸起区域，并在所述第一非镀覆区域中形成凹陷区域。 然后，加工膜全部应用于工件上。 加速膜的一部分从场区域选择性地去除，并且加速膜的另一部分残留在凹入加速区域中。 然后，金属沉积在工件上，并且金属在加速区域中以加速的速率沉积，导致与非激活场区域中的金属相比，加速区域中的金属厚度更大。 然后，从场区域中完全去除金属，从而形成金属特征。
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公开(公告)号：US07449099B1
公开(公告)日：2008-11-11
申请号：US10947085
申请日：2004-09-21
IPC分类号： C25D5/02
CPC分类号： H05K3/243 , H05K3/108 , H05K2201/0367 , H05K2201/09745 , H05K2203/0392 , H05K2203/122
摘要： To make a metal feature, a non-plateable layer is applied to a workpiece surface and then patterned to form a first plating region and a first non-plating region. Then, metal is deposited on the workpiece to form a raised field region in said first plating region and a recessed region in said first non-plating region. Then, an accelerator film is applied globally on the workpiece. A portion of the accelerator film is selectively removed from the field region, and another portion of the accelerator film remains in the recessed acceleration region. Then, metal is deposited onto the workpiece, and the metal deposits at an accelerated rate in the acceleration region, resulting in a greater thickness of metal in the acceleration region compared to metal in the non-activated field region. Then, metal is completely removed from the field region, thereby forming the metal feature.
摘要翻译： 为了制造金属特征，将不可镀层施加到工件表面，然后被图案化以形成第一镀层区域和第一非镀层区域。 然后，金属沉积在工件上，以在所述第一镀覆区域中形成凸起区域，并在所述第一非镀覆区域中形成凹陷区域。 然后，加工膜全部应用于工件上。 加速膜的一部分从场区域选择性地去除，并且加速膜的另一部分残留在凹入加速区域中。 然后，金属沉积在工件上，并且金属在加速区域中以加速的速率沉积，导致与非激活场区域中的金属相比，加速区域中的金属厚度更大。 然后，从场区域中完全去除金属，从而形成金属特征。
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公开(公告)号：US08500985B2
公开(公告)日：2013-08-06
申请号：US11827800
申请日：2007-07-13
CPC分类号： C25D5/022 , C25F5/00 , H05K3/07 , H05K3/108 , H05K2203/0108 , H05K2203/0392 , H05K2203/0537 , H05K2203/0713
摘要： Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.
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公开(公告)号：US20090277801A1
公开(公告)日：2009-11-12
申请号：US11890541
申请日：2007-08-06
CPC分类号： C25D5/022 , C25F5/00 , H05K3/07 , H05K3/108 , H05K2203/0108 , H05K2203/0392 , H05K2203/0537 , H05K2203/0713
摘要： Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.
摘要翻译： 进行选择性加速或选择性抑制金属沉积以形成电子器件的金属结构。 将所需的促进剂或抑制剂的图案施加到基材上; 例如，通过用图案化的印模冲压基板或使用喷墨打印机喷涂溶液。 在其它实施方案中，将全局加速剂或抑制剂层施加到基底上并以期望的图案选择性地修饰。 此后，进行选择性金属沉积。
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公开(公告)号：US07405163B1
公开(公告)日：2008-07-29
申请号：US10824069
申请日：2004-04-13
IPC分类号： H01L21/303
CPC分类号： H05K3/184 , H01L21/4846 , H05K3/045 , H05K3/107 , H05K2203/054 , H05K2203/072
摘要： An accelerator solution is globally applied to a workpiece to form an accelerator film, and then a portion of the accelerator film is selectively removed from the workpiece to form an acceleration region having a higher concentration of accelerator. The higher concentration of accelerator causes metal to deposit at a faster rate in the acceleration region than in a non-accelerated region for the duration of metal deposition. To make a metal feature, a resist layer is applied to a workpiece surface and patterned to form a recessed region and a field region. Then, a metal seed layer is deposited on the workpiece surface. An accelerator solution is applied so that an accelerator film forms on the metal seed layer. A portion of the accelerator film is selectively removed from the field region, leaving another portion of the accelerator film in the recessed region. Then, copper is electroplated onto the workpiece, and the copper plates at an accelerated rate in the recessed region, resulting in a greater thickness of copper in the recessed region compared to copper in the field region. A wet etch is performed to remove copper from the field region. Then, the resist is removed from the field region, resulting in a coarse copper wire.
摘要翻译： 将加速器溶液全局应用于工件以形成加速剂膜，然后将一部分加速剂膜从工件中选择性地除去，形成加速剂浓度较高的加速区域。 在金属沉积期间，较高浓度的促进剂会导致金属在加速区域以比非加速区域更快的速率沉积。 为了形成金属特征，将抗蚀剂层施加到工件表面并图案化以形成凹陷区域和场区域。 然后，金属种子层沉积在工件表面上。 施加促进剂溶液，使得在金属种子层上形成促进剂膜。 加速膜的一部分从场区域选择性地去除，另外部分加速器膜在凹陷区域中。 然后，在凹陷区域中以铜加速的方式将铜电镀到工件上，铜板以加速的速度电镀，导致与凹陷区域中的铜相比，凹陷区域中的铜的厚度更大。 执行湿蚀刻以从场区域去除铜。 然后，从场区域去除抗蚀剂，导致粗铜线。
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公开(公告)号：US20090280243A1
公开(公告)日：2009-11-12
申请号：US11827800
申请日：2007-07-13
IPC分类号： C09D7/00
CPC分类号： C25D5/022 , C25F5/00 , H05K3/07 , H05K3/108 , H05K2203/0108 , H05K2203/0392 , H05K2203/0537 , H05K2203/0713
摘要： Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.
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公开(公告)号：US20090266707A1
公开(公告)日：2009-10-29
申请号：US11890551
申请日：2007-08-06
IPC分类号： C25B9/00
CPC分类号： C25F3/30 , H01L21/32115 , H01L21/32125
摘要： Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure.
摘要翻译： 通过在衬底的第一部分处执行金属的阳极溶解并且用抛光垫同时机械抛光衬底的第二部分来进行衬底辅助电抛光。 阳极溶解包括在阳极底物和阴极电解抛光头之间形成电解抛光液体的薄液体层。 基板和电源之间的电触点的位置允许基板的外围边缘区域被该机械抛光。 优选地，使用各向同性材料去除技术进一步平坦化基底。 一种设备包括电抛光头，该电抛光头可移动到接近基底的第一部分的位置以形成薄间隙;以及抛光垫，其利用最小的压力机械地抛光所述基底的第二部分。
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