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    System and method for aligning substrates for multiple implants
    1.
    发明授权
    System and method for aligning substrates for multiple implants 有权
    用于对准多个植入物的基底的系统和方法

    公开(公告)号：US08895325B2

    公开(公告)日：2014-11-25

    申请号：US13458441

    申请日：2012-04-27

    申请人： John W. Graff ,  Benjamin B. Riordon ,  Nicholas P. T. Bateman

    发明人： John W. Graff ,  Benjamin B. Riordon ,  Nicholas P. T. Bateman

    IPC分类号： H01L21/00 ,  B05C11/00

    CPC分类号： H01J37/3171 ,  H01J37/3045 ,  H01J2237/31711 ,  H01L21/266

    摘要： A system and method are disclosed for aligning substrates during successive process steps, such as ion implantation steps, is disclosed. Implanted regions are created on a substrate. After implantation, an image is obtained of the implanted regions, and a fiducial is provided on the substrate in known relation to at least one of the implanted regions. A thermal anneal process is performed on the substrate such that the implanted regions are no longer visible but the fiducial remains visible. The position of the fiducial may be used in downstream process steps to properly align pattern masks over the implanted regions. The fiducial also may be applied to the substrate before any ion implanting of the substrate is performed. The position of the fiducial with respect to an edge or a corner of the substrate may be used for aligning during downstream process steps. Other embodiments are described and claimed.

    摘要翻译： 公开了用于在连续工艺步骤期间对准衬底的系统和方法，例如离子注入步骤。 在衬底上形成植入区域。 在植入之后，获得植入区域的图像，并且已知关系到至少一个植入区域的基底上提供了基准。 在基板上进行热退火处理，使得注入区域不再可见，但基准仍然可见。 基准的位置可以用于下游处理步骤，以便在注入区域上正确对准图案掩模。 在进行基板的任何离子注入之前，基准也可以应用于基板。 基准面相对于衬底的边缘或拐角的位置可用于在下游工艺步骤期间对准。 描述和要求保护其他实施例。

    System and Method for Aligning Substrates for Multiple Implants
    5.
    发明申请
    System and Method for Aligning Substrates for Multiple Implants 有权
    用于对准多个植入物的基板的系统和方法

    公开(公告)号：US20130288400A1

    公开(公告)日：2013-10-31

    申请号：US13458441

    申请日：2012-04-27

    申请人： John W. Graff ,  Benjamin B. Riordon ,  Nicholas P.T. Bateman

    发明人： John W. Graff ,  Benjamin B. Riordon ,  Nicholas P.T. Bateman

    IPC分类号： H01L21/66 ,  C23C14/48 ,  C23C14/54 ,  H01L31/02

    CPC分类号： H01J37/3171 ,  H01J37/3045 ,  H01J2237/31711 ,  H01L21/266

    摘要： A system and method are disclosed for aligning substrates during successive process steps, such as ion implantation steps, is disclosed. Implanted regions are created on a substrate. After implantation, an image is obtained of the implanted regions, and a fiducial is provided on the substrate in known relation to at least one of the implanted regions. A thermal anneal process is performed on the substrate such that the implanted regions are no longer visible but the fiducial remains visible. The position of the fiducial may be used in downstream process steps to properly align pattern masks over the implanted regions. The fiducial also may be applied to the substrate before any ion implanting of the substrate is performed. The position of the fiducial with respect to an edge or a corner of the substrate may be used for aligning during downstream process steps. Other embodiments are described and claimed.

    摘要翻译： 公开了用于在连续工艺步骤期间对准衬底的系统和方法，例如离子注入步骤。 在衬底上形成植入区域。 在植入之后，获得植入区域的图像，并且已知关系到至少一个植入区域的基底上提供了基准。 在基板上进行热退火处理，使得注入区域不再可见，但基准仍然可见。 基准的位置可以用于下游处理步骤，以便在注入区域上正确对准图案掩模。 在进行基板的任何离子注入之前，基准也可以应用于基板。 基准面相对于衬底的边缘或拐角的位置可用于在下游工艺步骤期间对准。 描述和要求保护其他实施例。