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    Power device having connection structure compensating for reactance component of transmission line
    3.
    发明申请
    Power device having connection structure compensating for reactance component of transmission line 失效
    具有补偿传输线电抗分量的连接结构的功率器件

    公开(公告)号：US20070132514A1

    公开(公告)日：2007-06-14

    申请号：US11519668

    申请日：2006-09-12

    申请人： Woo Chang ,  Jae Mun ,  Haecheon Kim ,  Jong Lim ,  Hong Ji ,  Ho Ahn

    发明人： Woo Chang ,  Jae Mun ,  Haecheon Kim ,  Jong Lim ,  Hong Ji ,  Ho Ahn

    IPC分类号： H03F3/68

    CPC分类号： H03F3/602 ,  H03F3/211 ,  H03F2200/366 ,  H03F2200/447 ,  H03F2200/543 ,  H03F2203/21178

    摘要： Provided is a power device having a connection structure compensating for a reactance component, in which transistors are arranged and connected to minimize deterioration of transistor properties caused by heat by compensating for a reactance component causing a phase difference due to transmission lines used for connecting a plurality of transistors in parallel such that the power device to be used for a high-frequency power amplifier outputs high power, and transmitting heat generated by high output power to a heat sink to be dissipated.

    摘要翻译： 提供了具有补偿电抗分量的连接结构的功率器件，其中配置并连接晶体管，以通过补偿导致由于用于连接多个元件的传输线引起的相位差的电抗分量来最小化由热引起的晶体管性质的劣化 的晶体管并联，使得用于高频功率放大器的功率器件输出高功率，并将由高输出功率产生的热量传输到散热器。

    Microwave food package and method
    4.
    发明授权
    Microwave food package and method 有权
    微波食品包装及方法

    公开(公告)号：US06259079B1

    公开(公告)日：2001-07-10

    申请号：US09484283

    申请日：2000-01-18

    申请人： Hong Ji ,  Randal J. Monforton

    发明人： Hong Ji ,  Randal J. Monforton

    IPC分类号： H05B680

    CPC分类号： B65D81/3469 ,  B65D2581/3421 ,  B65D2581/344 ,  B65D2581/3489 ,  B65D2581/349 ,  B65D2581/3491 ,  B65D2581/3493 ,  B65D2581/3494 ,  B65D2581/3498

    摘要： Apparatus for and method of controlling heating of a foodstuff using microwave energy having a food package with a microwave shielding layer containing a plurality of apertures therein sized to permit entry of both evanescent microwave energy and propagating microwave energy into the interior of the package with the microwave shielding layer being moved outward as the package expands due to generation of water vapor such that an interior volume of the package is subsequently protected against substantial evanescent microwave irradiation of the foodstuff during completion of the microwave heating cycle using propagating microwave energy to further heat the foodstuff.

    摘要翻译： 使用微波能量控制食品加热的装置和方法，所述食品包装具有包含多个孔的微波屏蔽层，其尺寸允许消逝的微波能量和微波能量进入到具有微波的包装内部的微波能量 屏蔽层随着封装由于水蒸气的产生而膨胀而向外移动，使得随后在使用传播的微波能量完成微波加热循环期间保护封装的内部容积免受食品的大量ev逝微波照射，从而进一步加热食品 。

    Food package for microwave heating
    5.
    发明授权
    Food package for microwave heating 有权
    微波加热食品包装

    公开(公告)号：US06231903B1

    公开(公告)日：2001-05-15

    申请号：US09248870

    申请日：1999-02-11

    申请人： Hong Ji ,  Randal J. Monforton

    发明人： Hong Ji ,  Randal J. Monforton

    IPC分类号： B65D8134

    CPC分类号： B65D81/3469 ,  B65D2581/3421 ,  B65D2581/3489 ,  B65D2581/3494

    摘要： A food package and method of controlling heating of a foodstuff within the food package using microwave energy wherein the food package has a microwave shielding layer containing a plurality of apertures therein sized to permit penetration of evanescent microwave energy into the interior of the package with the microwave shielding layer being moved outward as the package expands due to generation of water vapor such that an interior volume of the package is subsequently protected against substantial microwave irradiation of the foodstuff upon and beyond completion of the microwave heating cycle.

    摘要翻译： 一种食品包装和方法，其使用微波能量控制食品包装内的食品的加热，其中食品包装具有包含多个孔的微波屏蔽层，其尺寸允许微波能量通过微波穿透到包装内部 随着包装由于水蒸气的产生而膨胀，屏蔽层向外移动，使得随后在微波加热循环完成之后保护包装的内部容积免受食品的大量微波照射。

    Transistor or semiconductor device and method of fabricating the same
    6.
    发明申请
    Transistor or semiconductor device and method of fabricating the same 有权
    晶体管或半导体器件及其制造方法

    公开(公告)号：US20070238232A9

    公开(公告)日：2007-10-11

    申请号：US11179971

    申请日：2005-07-12

    申请人： Jae Mun ,  Jong Lim ,  Woo Chang ,  Hong Ji ,  Ho Ahn ,  Hae Kim

    发明人： Jae Mun ,  Jong Lim ,  Woo Chang ,  Hong Ji ,  Ho Ahn ,  Hae Kim

    IPC分类号： H01L21/338

    CPC分类号： H01L29/66462 ,  H01L29/7785

    摘要： Provided are a transistor of a semiconductor device and method of fabricating the same. The transistor includes: an epitaxy substrate disposed on a semi-insulating substrate and having a buffer layer, a first Si planar doping layer, a first conductive layer, a second Si planar doping layer, and a second conductive layer, which are sequentially stacked, the second Si planar doping layer having a doping concentration different from that of the first Si planar doping layer; a source electrode and a drain electrode diffusing into the first Si planar doping layer to a predetermined depth and disposed on both sides of the second conductive layer to form an ohmic contact; and a gate electrode disposed on the second conductive layer between the source and drain electrodes and being in contact with the second conductive layer. In this structure, both isolation and switching speed of the transistor can be increased. Also, the maximum voltage limit applied to the transistor is increased due to increases in gate turn-on voltage and threshold voltage and a reduction in parallel conduction element. As a result, the power handling capability of the transistor can be improved, thus improving a high-power low-distortion characteristic and an isolation characteristic.

    摘要翻译： 提供半导体器件的晶体管及其制造方法。 晶体管包括：设置在半绝缘衬底上并具有缓冲层的外延衬底，第一Si平面掺杂层，第一导电层，第二Si平面掺杂层和第二导电层， 所述第二Si平面掺杂层具有与所述第一Si平面掺杂层的掺杂浓度不同的掺杂浓度; 源极电极和漏电极，其扩散到所述第一Si平面掺杂层中至预定深度并且设置在所述第二导电层的两侧以形成欧姆接触; 以及设置在所述源极和漏极之间的所述第二导电层上并与所述第二导电层接触的栅电极。 在这种结构中，可以提高晶体管的隔离和开关速度。 此外，施加到晶体管的最大电压限制由于栅极导通电压和阈值电压的增加以及并联导通元件的减小而增加。 结果，可以提高晶体管的功率处理能力，从而提高高功率低失真特性和隔离特性。

    Oscillator using TFMS line
    7.
    发明申请
    Oscillator using TFMS line 审中-公开
    振荡器采用TFMS线

    公开(公告)号：US20070126518A1

    公开(公告)日：2007-06-07

    申请号：US11544629

    申请日：2006-10-10

    申请人： Hong Ji ,  Hea Kim ,  Kyoung Cho

    发明人： Hong Ji ,  Hea Kim ,  Kyoung Cho

    IPC分类号： H03B5/18

    CPC分类号： H03B5/1847

    摘要： Provided is an oscillator in which a resonator unit and an oscillator unit are coupled with each other using a thin film microstrip (TFMS) line to increase a line impedance and thus improve a phase noise characteristic. The oscillator includes a resonator unit resonating in a specific frequency band among variable frequencies, an oscillator unit generating an oscillation frequency using the resonance frequency, and a coupling unit coupling the resonator unit with the oscillator unit using a TFMS line.

    摘要翻译： 提供了一种振荡器，其中谐振器单元和振荡器单元使用薄膜微带线（TFMS）线彼此耦合以增加线路阻抗，从而提高相位噪声特性。 振荡器包括在可变频率之中的特定频带中谐振的谐振器单元，使用谐振频率产生振荡频率的振荡器单元，以及使用TFMS线将振荡器单元与振荡器单元耦合的耦合单元。

    COMPOUND SEMICONDUCTOR HIGH FREQUENCY SWITCH DEVICE
    8.
    发明申请
    COMPOUND SEMICONDUCTOR HIGH FREQUENCY SWITCH DEVICE 有权
    复合半导体高频开关器件

    公开(公告)号：US20050121694A1

    公开(公告)日：2005-06-09

    申请号：US10874396

    申请日：2004-06-22

    申请人： Jae Mun ,  Hong Ji ,  Hokyun Ahn ,  Heacheon Kim

    发明人： Jae Mun ,  Hong Ji ,  Hokyun Ahn ,  Heacheon Kim

    IPC分类号： H01L27/095 ,  H01L29/739 ,  H01L29/778 ,  H01L31/072

    CPC分类号： H01L29/7785

    摘要： A high frequency switch device includes an epitaxy substrate that is formed by sequentially stacking an AlGaAs/GaAs superlattic buffer layer, a first Si planar doping layer, an undoped first AlGaAs spacer, an undoped InGaAs layer, an undoped second AlGaAs spacer, a second Si planar doping layer having a doping density greater than that of the first Si planar doping layer, and an undoped GaAs/AlGaAs capping layer on a GaAs semi-insulated substrate. The undoped GaAs/AlGaAs capping layer is formed with a source electrode and a drain electrode that form an ohmic contact with the undoped GaAs/AlGaAs capping layer thereon, and a gate electrode formed between the source electrode and the drain electrode, thereby forming a Schottky contact with the undoped GaAs/AlGaAs capping layer.

    摘要翻译： 高频开关器件包括：通过依次层叠AlGaAs / GaAs超缓冲层，第一Si平面掺杂层，未掺杂的第一AlGaAs间隔物，未掺杂的InGaAs层，未掺杂的第二AlGaAs间隔物，第二Si 具有大于第一Si平面掺杂层的掺杂密度的平坦掺杂层和GaAs半绝缘衬底上的未掺杂的GaAs / AlGaAs覆盖层。 未掺杂的GaAs / AlGaAs覆盖层形成有与其上的未掺杂的GaAs / AlGaAs覆盖层形成欧姆接触的源电极和漏电极，以及形成在源电极和漏电极之间的栅电极，由此形成肖特基 与未掺杂的GaAs / AlGaAs覆盖层接触。

    Microwave food scorch shielding
    10.
    发明授权
    Microwave food scorch shielding 失效
    微波食品焦烧屏蔽

    公开(公告)号：US5928555A

    公开(公告)日：1999-07-27

    申请号：US9349

    申请日：1998-01-20

    申请人： Young Hwa Kim ,  Hong Ji ,  Victor Karpov

    发明人： Young Hwa Kim ,  Hong Ji ,  Victor Karpov

    IPC分类号： B65D81/34 ,  H05B6/80

    CPC分类号： B65D81/3446 ,  B65D2581/344 ,  B65D2581/3443 ,  B65D2581/3464 ,  B65D2581/3489 ,  Y10S99/14

    摘要： A microwave container which morphs from a relatively microwave transparent condition to a relatively microwave blocking condition in response to microwave irradiation. The container wall section has a plurality of discrete, unconnected microwave reflective material elements initially permitting the transmission of microwave energy into the container and either a microwave absorptive material or a thermally responsive material active to coalesce the microwave reflective material elements into a connected array or pattern to block the transmission of microwave energy from entering the container after absorbing a predetermined amount of microwave energy.

    摘要翻译： 微波容器，其从相对微波透明状态转变为响应于微波照射的相对微波阻挡状态。 容器壁部分具有多个离散的，未连接的微波反射材料元件，其最初允许将微波能量传输到容器中，以及微波吸收材料或热响应材料，其有效地将微波反射材料元件聚结成连接的阵列或图案 以阻止微波能量在吸收预定量的微波能量之后进入容器的传输。