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    Nonvolatile memory device having cell and peripheral regions and method of making the same
    2.
    发明申请
    Nonvolatile memory device having cell and peripheral regions and method of making the same 有权

    公开(公告)号：US20110037118A1

    公开(公告)日：2011-02-17

    申请号：US12923998

    申请日：2010-10-20

    申请人： Ju-Hyung Kim ,  Jung-Dal Choi ,  Jang-Hyun You

    发明人： Ju-Hyung Kim ,  Jung-Dal Choi ,  Jang-Hyun You

    IPC分类号： H01L29/792

    CPC分类号： H01L21/28282 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11573

    摘要： A nonvolatile memory device and method of making the same are provided. Memory cells may be provided in a cell area wherein each memory cell has an insulative structure including a tunnel insulating layer, a floating trap layer and a blocking layer, and a conductive structure including an energy barrier layer, a barrier metal layer and a low resistance gate electrode. A material having a lower resistivity may be used as the gate electrode so as to avoid problems associated with increased resistance and to allow the gate electrode to be made relatively thin. The memory device may further include transistors in the peripheral area, which may have a gate dielectric layer, a lower gate electrode of poly-silicon and an upper gate electrode made of metal silicide, allowing an improved interface with the lower gate electrode without diffusion or reaction while providing a lower resistance.

    Nonvolatile memory device and method of fabricating the same
    5.
    发明申请
    Nonvolatile memory device and method of fabricating the same 审中-公开
    非易失性存储器件及其制造方法

    公开(公告)号：US20060186462A1

    公开(公告)日：2006-08-24

    申请号：US11357329

    申请日：2006-02-21

    申请人： Jeong-Hee Han ,  Ju-Hyung Kim ,  Chung-Woo Kim ,  Sang-Hun Jeon ,  Youn-Seok Jeong ,  Seung-Hyun Lee

    发明人： Jeong-Hee Han ,  Ju-Hyung Kim ,  Chung-Woo Kim ,  Sang-Hun Jeon ,  Youn-Seok Jeong ,  Seung-Hyun Lee

    IPC分类号： H01L29/788

    CPC分类号： H01L29/42324 ,  H01L29/513 ,  H01L29/792

    摘要： Provided are example embodiments of fabrication methods and resulting structures suitable for use in nonvolatile memory devices formed on semiconductor substrates. The example embodiments of the gate structures include a first insulating film formed on the semiconductor substrate, a storage node formed on the first insulating film for storing charges, a second insulating film formed on the storage node, a third insulating film formed on the second insulating film, and a gate electrode formed on the third insulating film. The insulating films are selected whereby the dielectric constant of one or both of the second and third insulating films is greater than the dielectric constant of the first insulating film.

    摘要翻译： 提供了适用于形成在半导体衬底上的非易失性存储器件中的制造方法和结果结构的示例性实施例。 栅极结构的示例实施例包括形成在半导体衬底上的第一绝缘膜，形成在用于存储电荷的第一绝缘膜上的存储节点，形成在存储节点上的第二绝缘膜，形成在第二绝缘层上的第三绝缘膜 膜和形成在第三绝缘膜上的栅电极。 选择绝缘膜，由此第二和第三绝缘膜中的一个或两个的介电常数大于第一绝缘膜的介电常数。

    Phase locked loop integrated circuits having fast locking characteristics and methods of operating same
    6.
    发明申请
    Phase locked loop integrated circuits having fast locking characteristics and methods of operating same 有权
    具有快速锁定特性的锁相环集成电路及其操作方法

    公开(公告)号：US20060017476A1

    公开(公告)日：2006-01-26

    申请号：US11178629

    申请日：2005-07-11

    申请人： Seok-Min Jung ,  Ju-Hyung Kim

    发明人： Seok-Min Jung ,  Ju-Hyung Kim

    IPC分类号： H03L7/06

    CPC分类号： H03L7/10 ,  H03L7/0893 ,  H03L7/093

    摘要： An integrated circuit device includes a fast-locking phase locked loop (PLL). This PLL includes a phase-frequency detector and first and second charge pumps, which are responsive to first and second control signals generated by the phase-frequency detector. The first and second charge pumps have different current sourcing characteristics when the first control signal is active and different current sinking characteristics when the second control signal is active.

    摘要翻译： 集成电路器件包括快锁锁相环（PLL）。 该PLL包括相位检测器和第一和第二电荷泵，其响应由相位频率检测器产生的第一和第二控制信号。 当第二控制信号有效时，第一和第二电荷泵具有不同的电流源特性，当第二控制信号有效时，具有不同的电流吸收特性。

    Medical diagnostic apparatus having height-adjustable table for animals
    7.
    发明授权
    Medical diagnostic apparatus having height-adjustable table for animals 有权

    公开(公告)号：US10478275B2

    公开(公告)日：2019-11-19

    申请号：US15636724

    申请日：2017-06-29

    申请人： Ju-Hyung Kim

    发明人： Ju-Hyung Kim

    IPC分类号： A61D3/00 ,  A61G13/06 ,  A61B90/50 ,  A61B6/04 ,  A61B6/00

    摘要： A medical diagnostic apparatus having a height-adjustable table for animals according to an embodiment of the present invention includes: a table where an animal is placed; a support stand supporting the table such that the table vertically moves and adjusting height of the table to move the table close to a floor; an X-ray detector disposed under the table and coupled to the support stand to move with the table; and an imaging stand spaced from the table, connected to the support stand, and having an X-ray tube for radiating X-rays to the X-ray detector.

    Nonvolatile memory device and fabricating method thereof
    8.
    发明授权
    Nonvolatile memory device and fabricating method thereof 有权
    非易失存储器件及其制造方法

    公开(公告)号：US09112045B2

    公开(公告)日：2015-08-18

    申请号：US13775833

    申请日：2013-02-25

    申请人： Ju-Hyung Kim ,  Chang-Seok Kang ,  Woon-Kyung Lee

    发明人： Ju-Hyung Kim ,  Chang-Seok Kang ,  Woon-Kyung Lee

    IPC分类号： H01L29/792 ,  H01L29/66 ,  H01L29/423 ,  H01L29/51 ,  H01L27/115

    CPC分类号： H01L29/792 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/66833 ,  H01L29/7926

    摘要： A nonvolatile memory device comprises a channel pattern, a first interlayer dielectric film and a second interlayer dielectric film spaced apart from each other and stacked over each other, a gate pattern disposed between the first interlayer dielectric film and the second interlayer dielectric film, a trap layer disposed between the gate pattern and the channel pattern and a charge spreading inhibition layer disposed between the channel pattern and the first interlayer dielectric film and between the channel pattern and the second interlayer dielectric film. The charge spreading inhibition layer may include charges inside or on its surface. The charge spreading inhibition layer includes at least one of a metal oxide film or a metal nitride film or a metal oxynitride film having a greater dielectric constant than a silicon oxide film.

    摘要翻译： 非易失性存储器件包括彼此间隔开并且彼此堆叠的沟道图案，第一层间电介质膜和第二层间电介质膜，布置在第一层间电介质膜和第二层间电介质膜之间的栅极图案，阱 设置在栅极图案和沟道图案之间的层，以及设置在沟道图案和第一层间电介质膜之间以及沟道图案和第二层间电介质膜之间的电荷扩展抑制层。 电荷扩散抑制层可以包括其表面内部或其表面上的电荷。 电荷扩散抑制层包括金属氧化物膜或金属氮化物膜或具有比氧化硅膜更大的介电常数的金属氧氮化物膜中的至少一种。

    Secondary battery having an enlarged electrolytic solution inlet
    9.
    发明授权
    Secondary battery having an enlarged electrolytic solution inlet 有权
    具有放大的电解液入口的二次电池

    公开(公告)号：US07662511B2

    公开(公告)日：2010-02-16

    申请号：US10791854

    申请日：2004-03-04

    申请人： Su-Jin Han ,  Chang-Seob Kim ,  Yoon-Tai Kwak ,  Soo-Youn Maeng ,  Ju-Hyung Kim

    发明人： Su-Jin Han ,  Chang-Seob Kim ,  Yoon-Tai Kwak ,  Soo-Youn Maeng ,  Ju-Hyung Kim

    IPC分类号： H01M2/00 ,  H01M2/02 ,  H01M10/00 ,  H01M10/02

    CPC分类号： H01M2/361 ,  H01M2/1235 ,  H01M2/263 ,  H01M2/30 ,  H01M10/0525

    摘要： A secondary battery includes an electrode unit having a first electrode plate, a second electrode plate, a separator interposed therebetween, and first and second electrode tabs respectively extending from the first and second electrode plates, a can adapted to accommodate the electrode unit and an electrolytic solution, and a cap plate adapted to seal the can and having an electrolytic solution inlet, wherein the electrolytic solution inlet has an area on one surface of the cap plate different from that on another surface of the cap plate.

    摘要翻译： 二次电池包括电极单元，其具有第一电极板，第二电极板，插入其间的隔膜以及分别从第一和第二电极板延伸的第一和第二电极接头，适于容纳电极单元和电解质的电极 溶液和适于密封罐并具有电解液入口的盖板，其中电解溶液入口具有与盖板的另一表面上不同的盖板的一个表面上的区域。

    Pre-emphasis apparatus, low voltage differential signaling transmitter including the same and pre-emphasis method
    10.
    发明授权
    Pre-emphasis apparatus, low voltage differential signaling transmitter including the same and pre-emphasis method 有权
    预加重装置，低压差分信号发射机包括相同的预加重方法

    公开(公告)号：US07586330B2

    公开(公告)日：2009-09-08

    申请号：US11503311

    申请日：2006-08-11

    申请人： Ju-Hyung Kim

    发明人： Ju-Hyung Kim

    IPC分类号： H03K19/0175 ,  H03K3/00 ,  H03B1/00

    CPC分类号： H04L25/0272 ,  H03K19/0185

    摘要： A pre-emphasis apparatus of a LVDS transmitter includes a pre-emphasis signaling generation unit and a pre-emphasis current output unit. The pre-emphasis signal generation unit generates a pre-emphasis pulse signal based on N parallel data signals received from an external source and N-phase clock signals received from a phase locked loop, where N is an integer greater than 1. The pre-emphasis current output unit provides an additional current for a pre-emphasis operation to a current source of a LVDS driver in response to the pre-emphasis pulse signal generated by the pre-emphasis pulse signal generation unit. The pulse signal for pre-emphasis is generated based on the parallel data signals received from the external source and the multi-phase clock signals, which are output from the phase locked loop for performing a sampling of the parallel data signals.

    摘要翻译： LVDS发射机的预加重装置包括预加重信令产生单元和预加重电流输出单元。 预加重信号产生单元基于从外部源接收的N个并行数据信号和从锁相环接收的N相时钟信号产生预加重脉冲信号，其中N是大于1的整数。 强调电流输出单元响应于由预加重脉冲信号产生单元产生的预加重脉冲信号，向LVDS驱动器的电流源提供用于预加重操作的附加电流。 用于预加重的脉冲信号基于从外部源接收的并行数据信号和从锁相环输出的并行数据信号的采样的多相时钟信号产生。