Large scale integrated circuit for low voltage operation
    1.
    发明授权
    Large scale integrated circuit for low voltage operation 失效
    用于低压运行的大规模集成电路

    公开(公告)号:US5262999A

    公开(公告)日:1993-11-16

    申请号:US838505

    申请日:1992-03-24

    摘要: Disclosed is a one-chip ULSI which can carry out the fixed operation in a wide range of power supply voltage (1 V to 5.5 V). This one-chip ULSI is composed of a voltage converter circuit(s) which serves to a fixed internal voltage for a wide range of power supply voltage, an input/output buffer which can be adapted to several input/output levels, a dynamid RAM(s) which can operate at a power supply voltage of 2 V or less, etc. This one-chip ULSI can be applied to compact and portable electronic devices such as a lap-top type personal computer, an electronic pocket note book, a solid-state camera, etc.

    摘要翻译: 公开了一种单芯片ULSI,其可以在宽范围的电源电压(1V至5.5V)中进行固定操作。 该单芯片ULSI由一个电压转换器电路组成,该电路用于宽范围电源电压的固定内部电压,可适用于多个输入/输出电平的输入/输出缓冲器,一个动态RAM 可以在2V以下的电源电压下工作的这种单芯片ULSI可以应用于紧凑型便携式电子设备,例如笔记本型个人计算机,电子口袋笔记本, 固态摄像机等

    Large scale integrated circuit for low voltage operation
    3.
    发明授权
    Large scale integrated circuit for low voltage operation 失效
    用于低压运行的大规模集成电路

    公开(公告)号:US5297097A

    公开(公告)日:1994-03-22

    申请号:US366869

    申请日:1989-06-14

    摘要: Disclosed is a one-chip ULSI which can carry out fixed operations for a wide range of power supply voltages (1 V to 5.5 V). This one-chip ULSI is composed of a voltage converter circuit(s) which provides a fixed internal voltage for a wide range of power supply voltages, an input/output buffer which can be adapted to several input/out interface levels, a dynamic or volatile RAM(s) which can operate at a power supply voltage of 2 V or less, etc. This one-chip ULSI can be applied to compact and portable electronic devices such as a lap-top type personal computer, an electronic pocket note book, a solid-state camera, etc.

    摘要翻译: 公开了一种单芯片ULSI,其可以对宽范围的电源电压(1V至5.5V)进行固定操作。 该单芯片ULSI由一个电压转换器电路组成,该电路为广泛的电源电压提供固定的内部电压,可适应多个输入/输出接口电平的输入/输出缓冲器,动态或 可以在2V以下的电源电压下工作的易失性RAM。该单芯片ULSI可以应用于紧凑型便携式电子设备,例如笔记本型个人计算机,电子口袋笔记本 ,固态摄像机等

    Large scale integrated circuit with sense amplifier circuits for low voltage operation
    4.
    再颁专利
    Large scale integrated circuit with sense amplifier circuits for low voltage operation 失效
    具有读出放大器电路的大规模集成电路用于低电压操作

    公开(公告)号:USRE37593E1

    公开(公告)日:2002-03-19

    申请号:US09095101

    申请日:1998-06-10

    IPC分类号: G11C700

    摘要: Disclosed is a one-chip ULSI which can carry out the fixed operation in a wide range of power supply voltage (1 V to 5.5 V). This one-chip ULSI is composed of a voltage converter circuit(s) which serves to a fixed internal voltage for a wide range of power supply voltage, an input/output buffer which can be adapted to several input/output levels, a dynamid RAM(s) which can operate at a power supply voltage of 2 V or less, etc. This one-chip ULSI can be applied to compact and portable electronic devices such as a lap-top type personal computer, an electronic pocket note book, a solid-state camera, etc.

    摘要翻译: 公开了一种单芯片ULSI,其可以在宽范围的电源电压(1V至5.5V)中进行固定操作。 该单芯片ULSI由一个电压转换器电路组成,该电路用于宽范围电源电压的固定内部电压,可适用于多个输入/输出电平的输入/输出缓冲器,一个动态RAM 可以在2V以下的电源电压下工作的这种单芯片ULSI可以应用于紧凑型便携式电子设备,例如笔记本型个人计算机,电子口袋笔记本, 固态摄像机等

    High-speed semicondustor memory integrated circuit arrangement having
power and signal lines with reduced resistance
    5.
    发明授权
    High-speed semicondustor memory integrated circuit arrangement having power and signal lines with reduced resistance 失效
    高速半导体存储器集成电路布置具有功率和信号线,电阻降低

    公开(公告)号:US5280450A

    公开(公告)日:1994-01-18

    申请号:US695983

    申请日:1991-05-06

    摘要: A semiconductor integrated circuit is disclosed, in which a group of sense amplifiers activated at the same time by a selection signal on a selection signal line are divided into a plurality of blocks, and a power-source line for driving sense amplifiers is formed for each sense amplifier block so as to cross the selection signal line. Alternatively, an input/output line is divided into a plurality of sub-input/output lines, and a plurality of input/output lines are formed so that each input/output line crosses its sub-input/output lines, to form a hierarchical structure with respect to input/output lines. Thus, the load capacitance of each power-source line is reduced, and the time constant of each of the charging and discharging of the load capacitance is decreased. That is, the above semiconductor integrated circuit can operate at high speed.

    摘要翻译: 公开了一种半导体集成电路,其中通过选择信号线上的选择信号同时激活的一组读出放大器被分成多个块,并且为每个块形成用于驱动读出放大器的电源线 读出放大器块,以便跨越选择信号线。 或者,输入/输出线被分成多个子输入/输出线,并且形成多个输入/输出线,使得每个输入/输出线与其子输入/输出线交叉,以形成分级 相对于输入/输出线的结构。 因此,每个电源线的负载电容减小,并且负载电容的充电和放电的每个的时间常数减小。 也就是说,上述半导体集成电路可以高速运行。

    Semiconductor memory operating with low supply voltage
    8.
    发明授权
    Semiconductor memory operating with low supply voltage 失效
    半导体存储器以低电源电压工作

    公开(公告)号:US5264743A

    公开(公告)日:1993-11-23

    申请号:US621064

    申请日:1990-11-29

    摘要: The present invention is intended to operate a semiconductor device at high speed with low voltage. A circuit configuration is used in which the transfer impedance between a common I/O line and a data line is changed depending on whether information is to be read or written. A current/voltage converter is provided which includes a MISFET different in conduction type to a select MISFET. Thus, the speed of reading information is increased. An intermediate voltage generator having high driving capability is provided. Thus, the circuit has sufficient driving capability for an LSI having large load capacitance. A voltage converter is provided which converts a data line supply voltage or word line supply voltage to a higher voltage. Therefore, stabilized signal transmission is ensured.

    摘要翻译: 本发明旨在以低电压高速运行半导体器件。 使用电路配置,其中根据是要读取还是写入信息,在公共I / O线和数据线之间的传输阻抗改变。 提供了一种电流/电压转换器,其包括与选择的MISFET不同的导电类型的MISFET。 因此,读取信息的速度增加。 提供具有高驱动能力的中间电压发生器。 因此,对具有大负载电容的LSI具有足够的驱动能力。 提供了一种电压转换器,其将数据线电源电压或字线电源电压转换为更高的电压。 因此,确保了稳定的信号传输。

    Semiconductor memory operating with low supply voltage
    9.
    发明授权
    Semiconductor memory operating with low supply voltage 失效
    半导体存储器以低电源电压工作

    公开(公告)号:US5555215A

    公开(公告)日:1996-09-10

    申请号:US539724

    申请日:1995-10-05

    摘要: The present invention is intended to operate a semiconductor device at high speed with low voltage. A circuit configuration is used in which the transfer impedance between a common I/O line and a data line is changed depending on whether information is to be read or written. A current/voltage converter is provided which includes a MISFET different in conduction type to a select MISFET. Thus, the speed of reading information is increased. An intermediate voltage generator having high driving capability is provided. Thus, the circuit has sufficient driving capability for an LSI having large load capacitance. A voltage converter is provided which converts a data line supply voltage or word line supply voltage to a higher voltage. Therefore, stabilized signal transmission is ensured.

    摘要翻译: 本发明旨在以低电压高速运行半导体器件。 使用电路配置,其中根据是要读取还是写入信息,在公共I / O线和数据线之间的传输阻抗改变。 提供了一种电流/电压转换器,其包括与选择的MISFET不同的导电类型的MISFET。 因此,读取信息的速度增加。 提供具有高驱动能力的中间电压发生器。 因此,对具有大负载电容的LSI具有足够的驱动能力。 提供了一种电压转换器,其将数据线电源电压或字线电源电压转换为更高的电压。 因此,确保了稳定的信号传输。