摘要:
Disclosed is a one-chip ULSI which can carry out the fixed operation in a wide range of power supply voltage (1 V to 5.5 V). This one-chip ULSI is composed of a voltage converter circuit(s) which serves to a fixed internal voltage for a wide range of power supply voltage, an input/output buffer which can be adapted to several input/output levels, a dynamid RAM(s) which can operate at a power supply voltage of 2 V or less, etc. This one-chip ULSI can be applied to compact and portable electronic devices such as a lap-top type personal computer, an electronic pocket note book, a solid-state camera, etc.
摘要:
Disclosed is a one-chip ULSI which can carry out the fixed operation in a wide range of power supply voltage (1 V to 5.5 V). This one-chip ULSI is composed of a voltage converter circuit(s) which serves to a fixed internal voltage for a wide range of power supply voltage, an input/output buffer which can be adapted to several input/output levels, a dynamid RAM(s) which can operate at a power supply voltage of 2 V or less, etc. This one-chip ULSI can be applied to compact and portable electronic devices such as a lap-top type personal computer, an electronic pocket note book, a solid-state camera, etc.
摘要:
Disclosed is a one-chip ULSI which can carry out fixed operations for a wide range of power supply voltages (1 V to 5.5 V). This one-chip ULSI is composed of a voltage converter circuit(s) which provides a fixed internal voltage for a wide range of power supply voltages, an input/output buffer which can be adapted to several input/out interface levels, a dynamic or volatile RAM(s) which can operate at a power supply voltage of 2 V or less, etc. This one-chip ULSI can be applied to compact and portable electronic devices such as a lap-top type personal computer, an electronic pocket note book, a solid-state camera, etc.
摘要:
Disclosed is a one-chip ULSI which can carry out the fixed operation in a wide range of power supply voltage (1 V to 5.5 V). This one-chip ULSI is composed of a voltage converter circuit(s) which serves to a fixed internal voltage for a wide range of power supply voltage, an input/output buffer which can be adapted to several input/output levels, a dynamid RAM(s) which can operate at a power supply voltage of 2 V or less, etc. This one-chip ULSI can be applied to compact and portable electronic devices such as a lap-top type personal computer, an electronic pocket note book, a solid-state camera, etc.
摘要:
A semiconductor integrated circuit is disclosed, in which a group of sense amplifiers activated at the same time by a selection signal on a selection signal line are divided into a plurality of blocks, and a power-source line for driving sense amplifiers is formed for each sense amplifier block so as to cross the selection signal line. Alternatively, an input/output line is divided into a plurality of sub-input/output lines, and a plurality of input/output lines are formed so that each input/output line crosses its sub-input/output lines, to form a hierarchical structure with respect to input/output lines. Thus, the load capacitance of each power-source line is reduced, and the time constant of each of the charging and discharging of the load capacitance is decreased. That is, the above semiconductor integrated circuit can operate at high speed.
摘要:
In a semiconductor memory, switch circuits are provided so as to inhibit voltage and signal supplies to each of the normal memory blocks when so required. On the other hand, a ROM is provided on the chip so as to store the address of a defective memory block which consumes an excessively large stand-by current when the semiconductor memory is in the stand-by mode. The switch circuits are controlled by the output of the ROM so as to inhibit the voltage and signal supply to the defective memory block. Then, a spare memory block which is substituted for the defective normal memory block receives the voltage and signal supply.
摘要:
Practical structures of an ultra large scale semiconductor integrated (ULSI) circuit especially a dynamic random access memory of 16 M bits or more are involved. The ULSI circuit uses internal operating voltages and how to construct a reference voltage generating circuit and a voltage limiter circuit in the ULSI circuit is a matter of importance. The operation of the reference voltage generating circuit and voltage limiter circuit can be stabilized, characteristics of these circuits are improved, and layout of these circuits as applied to memory cell array, peripheral circuits and the like can be improved. Improved methods of testing these circuits are provided.
摘要:
The present invention is intended to operate a semiconductor device at high speed with low voltage. A circuit configuration is used in which the transfer impedance between a common I/O line and a data line is changed depending on whether information is to be read or written. A current/voltage converter is provided which includes a MISFET different in conduction type to a select MISFET. Thus, the speed of reading information is increased. An intermediate voltage generator having high driving capability is provided. Thus, the circuit has sufficient driving capability for an LSI having large load capacitance. A voltage converter is provided which converts a data line supply voltage or word line supply voltage to a higher voltage. Therefore, stabilized signal transmission is ensured.
摘要:
The present invention is intended to operate a semiconductor device at high speed with low voltage. A circuit configuration is used in which the transfer impedance between a common I/O line and a data line is changed depending on whether information is to be read or written. A current/voltage converter is provided which includes a MISFET different in conduction type to a select MISFET. Thus, the speed of reading information is increased. An intermediate voltage generator having high driving capability is provided. Thus, the circuit has sufficient driving capability for an LSI having large load capacitance. A voltage converter is provided which converts a data line supply voltage or word line supply voltage to a higher voltage. Therefore, stabilized signal transmission is ensured.
摘要:
In a semiconductor memory, switch circuits are provided so as to inhibit voltage and signal supplies to each of the normal memory blocks when so required. On the other hand, a ROM is provided on the chip so as to store the address of a defective memory block which consumes an excessively large stand-by current when the semiconductor memory is in the stand-by mode. The switch circuits are controlled by the output of the ROM so as to inhibit the voltage and signal supply to the defective memory block. Then, a spare memory block which is substituted for the defective normal memory block receives the voltage and signal supply.