PATTERNING PROCESS AND RESIST COMPOSITION
    3.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION 审中-公开
    绘图工艺和耐腐蚀组合物

    公开(公告)号:US20120315581A1

    公开(公告)日:2012-12-13

    申请号:US13494241

    申请日:2012-06-12

    IPC分类号: G03F7/004 G03F7/20

    摘要: A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of (meth)acrylate having two adjacent hydroxyl groups substituted with acid labile groups, an acid generator, and an organic solvent displays a high dissolution contrast between the unexposed region of promoted dissolution and the exposed region of inhibited dissolution.

    摘要翻译: 通过将抗蚀剂组合物施加到基材上,预烘烤,暴露于高能辐射,烘烤(PEB)和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域来形成负图案。 包含含有具有被酸不稳定基团取代的具有两个相邻羟基的(甲基)丙烯酸酯的重复单元的聚合物的抗蚀剂组合物,酸产生剂和有机溶剂在未曝光的促进溶解区域和暴露的区域之间显示高溶解度对比度 抑制溶解。

    PATTERNING PROCESS AND RESIST COMPOSITION
    5.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION 有权
    绘图工艺和耐腐蚀组合物

    公开(公告)号:US20080199806A1

    公开(公告)日:2008-08-21

    申请号:US12029940

    申请日:2008-02-12

    IPC分类号: G03F7/004 G03F7/30

    摘要: A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.

    摘要翻译: 通过在基材上涂布含有包含含有7-氧代降冰片烷环的重复单元和含酸不稳定基团的重复单元的聚合物和酸产生剂的正性抗蚀剂组合物形成抗蚀剂膜,对抗蚀剂膜进行热处理和曝光来形成图案 用显影剂进行辐射,热处理和显影抗蚀剂膜,并使抗蚀剂膜在酸和/或热的帮助下交联和固化。 然后在第一抗蚀剂图案的空间区域中形成第二抗蚀剂图案。 双重图案化工艺将图案之间的间距缩小到一半。

    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
    6.
    发明申请
    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
    积极的组合和绘图过程

    公开(公告)号:US20130084527A1

    公开(公告)日:2013-04-04

    申请号:US13614527

    申请日:2012-09-13

    摘要: A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a reduced acid diffusion rate, and forms a pattern with good profile, minimal edge roughness, and etch resistance. In formula (1), R1 and R2 each are alkyl, aryl, or alkenyl, which may contain oxygen or sulfur, R3 is fluorine or trifluoromethyl, and m is an integer of 1 to 5.

    摘要翻译: 包含具有由具有式(1)的酸不稳定基团取代的羧基的聚合物的正型抗蚀剂组合物在曝光前后显示出高的对比度的碱溶解速率,高分辨率,降低的酸扩散速率,并形成良好的图案 轮廓,最小边缘粗糙度和耐蚀刻性。 式(1)中,R 1和R 2各自为可以含有氧或硫的烷基,芳基或烯基,R 3为氟或三氟甲基,m为1〜5的整数。

    PATTERNING PROCESS AND RESIST COMPOSITION
    8.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION 有权
    绘图工艺和耐腐蚀组合物

    公开(公告)号:US20100304297A1

    公开(公告)日:2010-12-02

    申请号:US12787823

    申请日:2010-05-26

    IPC分类号: G03F7/20 G03F7/004

    摘要: A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.

    摘要翻译: 通过将包含基础树脂,光致酸发生剂和基底发生器的第一正型抗蚀剂组合物涂覆在基材上以形成第一抗蚀剂膜,图案曝光,PEB和显影以形成第一抗蚀剂图案,形成图案,加热 第一抗蚀剂图案,用于使基底发生器产生用于使图案失去酸的碱,将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂覆到第一抗蚀剂图案衬底上以形成第二抗蚀剂图案 抗蚀剂膜,图案曝光,PEB和显影以形成第二抗蚀剂图案。

    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    9.
    发明申请
    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    含硫酸钠聚合物,耐腐蚀组合物和图案处理

    公开(公告)号:US20090269696A1

    公开(公告)日:2009-10-29

    申请号:US12428933

    申请日:2009-04-23

    IPC分类号: G03F7/20 C08F214/18 G03F7/004

    摘要: A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N=0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a=0-3, b=1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.

    摘要翻译: 提供了包含具有式(1),(2)和(3)的重复单元的聚合物以及包含其的化学放大抗蚀剂组合物。 R 1是H,F,CH 3或CF 3,R f是H,F,CF 3或C 2 F 5,A是任选氟或氧取代的二价有机基团,R 2,R 3和R 4是烷基,烯基,氧代烷基,芳基,芳烷基或芳氧基烷基 或者可以与硫原子形成环,N = O-2,R 8是H或烷基,B是单键或任选的氧取代的二价有机基团,a = 0-3,b = 1-3,和 X是酸不稳定组。 该聚合物产生强的磺酸,其提供化学增强抗蚀剂组合物中酸不稳定基团的有效切割。

    DOUBLE PATTERNING PROCESS
    10.
    发明申请
    DOUBLE PATTERNING PROCESS 有权
    双重图案处理

    公开(公告)号:US20090253084A1

    公开(公告)日:2009-10-08

    申请号:US12418090

    申请日:2009-04-03

    IPC分类号: G03F7/00

    摘要: Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.

    摘要翻译: 通过涂覆化学放大的正性抗蚀剂组合物形成双重图案,所述正性抗蚀剂组合物包含含酸不稳定基团的树脂和光致酸发生剂和预烘烤以在可加工的基材上形成抗蚀剂膜,将抗蚀剂膜暴露于高能量辐射,PEB和显影 用碱性显影剂形成正的抗蚀剂图案,将正性抗蚀剂图案处理为碱溶性和耐溶剂性,涂覆负性抗蚀剂组合物和预烘烤以形成反转膜,并将反转膜暴露于高能辐射PEB, 并用碱性显影剂显影以形成负的抗蚀剂图案。 最后的显影步骤包括将已被转化为可溶于显影剂的正性抗蚀图案溶解的反转移步骤。