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    Floating body field-effect transistors, and methods of forming floating body field-effect transistors
    1.
    发明授权
    Floating body field-effect transistors, and methods of forming floating body field-effect transistors 有权
    浮体场效应晶体管，以及形成浮体场效应晶体管的方法

    公开(公告)号：US08395214B2

    公开(公告)日：2013-03-12

    申请号：US13088531

    申请日：2011-04-18

    申请人： Jun Liu ,  Di Li ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch

    发明人： Jun Liu ,  Di Li ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch

    IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L23/02

    CPC分类号： H01L27/1203 ,  H01L27/10802 ,  H01L29/66477 ,  H01L29/7841 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is received between the gate electrode and the floating body channel region. The floating body channel region has a semiconductor SixGe(1-x)-comprising region. The floating body channel region has a semiconductor silicon-comprising region received between the semiconductor SixGe(1-x)-comprising region and the gate dielectric. The semiconductor SixGe(1-x)-comprising region has greater quantity of Ge than any quantity of Ge within the semiconductor silicon-comprising region. Other embodiments are contemplated, including methods of forming floating body field-effect transistors.

    摘要翻译： 在一个实施例中，浮体场效应晶体管包括一对在其间容纳浮体通道区的源/漏区。 源极/漏极区域和浮体沟道区域被接纳在绝缘体上。 栅电极靠近浮体通道区域。 门电介质被接收在栅电极和浮体沟道区之间。 浮体通道区域具有半导体SixGe（1-x）区域。 浮体通道区域具有容纳在半导体SixGe（1-x）区域和栅极电介质之间的半导体硅包覆区域。 半导体SixGe（1-x）含量区域在含半导体硅的区域内具有比任何Ge量更大的Ge量。 考虑了其他实施例，包括形成浮体场效应晶体管的方法。

    Floating Body Field-Effect Transistors, And Methods Of Forming Floating Body Field-Effect Transistors
    2.
    发明申请
    Floating Body Field-Effect Transistors, And Methods Of Forming Floating Body Field-Effect Transistors 有权
    浮体场效应晶体管，以及形成浮体场效应晶体管的方法

    公开(公告)号：US20110193165A1

    公开(公告)日：2011-08-11

    申请号：US13088531

    申请日：2011-04-18

    申请人： Jun Liu ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch ,  Di Li

    发明人： Jun Liu ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch ,  Di Li

    IPC分类号： H01L27/12 ,  H01L21/336

    CPC分类号： H01L27/1203 ,  H01L27/10802 ,  H01L29/66477 ,  H01L29/7841 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is received between the gate electrode and the floating body channel region. The floating body channel region has a semiconductor SixGe(1-x)-comprising region. The floating body channel region has a semiconductor silicon-comprising region received between the semiconductor SixGe(1-x)-comprising region and the gate dielectric. The semiconductor SixGe(1-x)-comprising region has greater quantity of Ge than any quantity of Ge within the semiconductor silicon-comprising region. Other embodiments are contemplated, including methods of forming floating body field-effect transistors.

    摘要翻译： 在一个实施例中，浮体场效应晶体管包括一对在其间容纳浮体通道区的源/漏区。 源极/漏极区域和浮体沟道区域被接纳在绝缘体上。 栅电极靠近浮体通道区域。 门电介质被接收在栅电极和浮体沟道区之间。 浮体通道区域具有半导体SixGe（1-x）区域。 浮体通道区域具有容纳在半导体SixGe（1-x）区域和栅极电介质之间的半导体硅包覆区域。 半导体SixGe（1-x）含量区域在含半导体硅的区域内具有比任何Ge量更大的Ge量。 考虑了其他实施例，包括形成浮体场效应晶体管的方法。

    Floating body field-effect transistors, and methods of forming floating body field-effect transistors
    3.
    发明授权
    Floating body field-effect transistors, and methods of forming floating body field-effect transistors 有权
    浮体场效应晶体管，以及形成浮体场效应晶体管的方法

    公开(公告)号：US07948008B2

    公开(公告)日：2011-05-24

    申请号：US11925573

    申请日：2007-10-26

    申请人： Jun Liu ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch ,  Di Li

    发明人： Jun Liu ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch ,  Di Li

    IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0392

    CPC分类号： H01L27/1203 ,  H01L27/10802 ,  H01L29/66477 ,  H01L29/7841 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is received between the gate electrode and the floating body channel region. The floating body channel region has a semiconductor SixGe(1-x)-comprising region. The floating body channel region has a semiconductor silicon-comprising region received between the semiconductor SixGe(1-x)-comprising region and the gate dielectric. The semiconductor SixGe(1-x)-comprising region has greater quantity of Ge than any quantity of Ge within the semiconductor silicon-comprising region. Other embodiments are contemplated, including methods of forming floating body field-effect transistors.

    摘要翻译： 在一个实施例中，浮体场效应晶体管包括一对在其间容纳浮体通道区的源/漏区。 源极/漏极区域和浮体沟道区域被接纳在绝缘体上。 栅电极靠近浮体通道区域。 门电介质被接收在栅电极和浮体沟道区之间。 浮体通道区域具有半导体SixGe（1-x）区域。 浮体通道区域具有容纳在半导体SixGe（1-x）区域和栅极电介质之间的半导体硅包覆区域。 半导体SixGe（1-x）含量区域在含半导体硅的区域内具有比任何Ge量更大的Ge量。 考虑了其他实施例，包括形成浮体场效应晶体管的方法。

    Floating Body Field-Effect Transistors, and Methods of Forming Floating Body Field-Effect Transistors
    4.
    发明申请
    Floating Body Field-Effect Transistors, and Methods of Forming Floating Body Field-Effect Transistors 有权
    浮体场效应晶体管，以及形成浮体场效应晶体管的方法

    公开(公告)号：US20090108292A1

    公开(公告)日：2009-04-30

    申请号：US11925573

    申请日：2007-10-26

    申请人： Jun Liu ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch ,  Di Li

    发明人： Jun Liu ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch ,  Di Li

    IPC分类号： H01L29/778 ,  H01L21/336 ,  H01L29/786

    CPC分类号： H01L27/1203 ,  H01L27/10802 ,  H01L29/66477 ,  H01L29/7841 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is received between the gate electrode and the floating body channel region. The floating body channel region has a semiconductor SixGe(1-x)-comprising region. The floating body channel region has a semiconductor silicon-comprising region received between the semiconductor SixGe(1-x)-comprising region and the gate dielectric. The semiconductor SixGe(1-x)-comprising region has greater quantity of Ge than any quantity of Ge within the semiconductor silicon-comprising region. Other embodiments are contemplated, including methods of forming floating body field-effect transistors.

    摘要翻译： 在一个实施例中，浮体场效应晶体管包括一对在其间容纳浮体通道区的源/漏区。 源极/漏极区域和浮体沟道区域被接纳在绝缘体上。 栅电极靠近浮体通道区域。 门电介质被接收在栅电极和浮体沟道区之间。 浮体通道区域具有半导体SixGe（1-x）区域。 浮体通道区域具有容纳在半导体SixGe（1-x）区域和栅极电介质之间的半导体硅包覆区域。 半导体SixGe（1-x）含量区域在含半导体硅的区域内具有比任何Ge量更大的Ge量。 考虑了其他实施例，包括形成浮体场效应晶体管的方法。

    PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE
    8.
    发明申请
    PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE 有权
    相位变化记忆体与调制结构

    公开(公告)号：US20090231911A1

    公开(公告)日：2009-09-17

    申请号：US12049056

    申请日：2008-03-14

    申请人： Jun Liu ,  Michael P. Violette

    发明人： Jun Liu ,  Michael P. Violette

    IPC分类号： G11C11/00 ,  H01L47/00 ,  H01L21/00

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1608 ,  H01L45/1675 ,  H01L45/1683

    摘要： Some embodiments include apparatus and methods having a memory cell with a first electrode and a second electrode, and a memory element directly contacting the first and second electrodes. The memory element may include a programmable portion having a material configured to change between multiple phases. The programmable portion may be isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element.

    摘要翻译： 一些实施例包括具有具有第一电极和第二电极的存储单元的设备和方法，以及直接接触第一和第二电极的存储元件。 存储元件可以包括具有被配置为在多个相之间变化的材料的可编程部分。 可编程部分可以通过存储元件的第一部分与第一电极隔离，并且通过存储元件的第二部分与第二电极隔离。

    Phase change memory cell with constriction structure
    10.
    发明授权
    Phase change memory cell with constriction structure 有权
    具有收缩结构的相变记忆体

    公开(公告)号：US08809108B2

    公开(公告)日：2014-08-19

    申请号：US12950827

    申请日：2010-11-19

    申请人： Jun Liu ,  Michael P. Violette

    发明人： Jun Liu ,  Michael P. Violette

    IPC分类号： H01L21/00 ,  H01L45/00

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1608 ,  H01L45/1675 ,  H01L45/1683

    摘要： Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly contacting the first and second electrodes. Forming the memory element can include forming a programmable portion of the memory element isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element. Other embodiments are described.

    摘要翻译： 一些实施例包括形成存储器单元的方法。 这样的方法可以包括形成第一电极，第二电极和直接接触第一和第二电极的存储元件。 存储元件的形成可以包括通过存储元件的第一部分形成与第一电极隔离的存储元件的可编程部分，并通过存储元件的第二部分与第二电极隔离。 描述其他实施例。