公开(公告)号：US06615499B1

公开(公告)日：2003-09-09

申请号：US09979733

申请日：2001-11-28

申请人： Jun Matsuzawa ,  Atsushi Sugimoto ,  Masato Yoshida ,  Keizou Hirai ,  Toranosuke Ashizawa ,  Yuuto Ootsuki

发明人： Jun Matsuzawa ,  Atsushi Sugimoto ,  Masato Yoshida ,  Keizou Hirai ,  Toranosuke Ashizawa ,  Yuuto Ootsuki

IPC分类号： C09K314

CPC分类号： B82Y30/00 ,  C01F17/0043 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2004/64 ,  C01P2006/10 ,  C01P2006/14 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

摘要： The present invention provides a method for producing cerium oxide comprising rapid heating of cerium salts to a calcining temperature to calcine them, a cerium oxide abrasive containing the cerium oxide produced by the method and pure water, an abrasive containing a slurry in which cerium oxide particles having an intensity ratio of an area of a primary peak appearing at 27 to 30° to that of a secondary peak appearing at 32 to 35° (primary peak/secondary peak) in a powder X-ray diffraction chart of 3.20 or more are dispersed in a medium, an abrasive containing a slurry in which cerium oxide particles whose bulk density is 6.5 g/cm3 or less are dispersed into a medium, an abrasive containing a slurry in which abrasive grains having pores are dispersed into a medium, a method for polishing a substrate comprising polishing a predetermined substrate using the abrasive; and a method for manufacturing a semiconductor comprising the step of polishing by the abrasive.

摘要翻译： 本发明提供了一种生产氧化铈的方法，包括将铈盐快速加热至煅烧温度以煅烧它们，含有通过该方法生产的氧化铈的氧化铈磨料和纯水，含有其中氧化铈颗粒 在粉末X射线衍射图中，出现在32〜35°（一次峰/次峰）的二峰出现在27-30度的一次峰的面积的强度比分散在3.20以上分散 在介质中，含有其中堆积密度为6.5g / cm 3以下的氧化铈颗粒分散在介质中的浆料的研磨剂，含有其中具有孔的磨粒的浆料分散在介质中的研磨剂， 抛光衬底，包括使用研磨剂抛光预定衬底; 以及一种用于制造半导体的方法，包括通过研磨剂抛光的步骤。

公开(公告)号：US20070266642A1

公开(公告)日：2007-11-22

申请号：US11878504

申请日：2007-07-25

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： B24B7/22

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

摘要翻译： 本发明提供一种研磨剂，其包含含有介质的浆料，其中分散有i）至少一种，其中i） 由至少两个晶体构成并具有晶界或堆积密度不高于6.5g / cm 3的氧化铈颗粒和ii）具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

公开(公告)号：US20050085168A1

公开(公告)日：2005-04-21

申请号：US10960941

申请日：2004-10-12

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

IPC分类号： C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321 ,  B24D3/02 ,  B24B1/00

CPC分类号： C09K3/1463 ,  C01F17/0043 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/31053

摘要： A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

摘要翻译： 一种分散在介质中的氧化铈磨料浆料，其一次粒子的中值粒径为30nm〜250nm，最大粒径为600nm以下，比表面积为7〜45μm m 2 / g，浆料颗粒的中值粒径为150nm至600nm。 氧化铈颗粒具有结构参数Y，表示通过X射线Rietveld方法（用RIETAN-94）获得的各向同性微应变为0.01至0.70，结构参数X表示通过X射线获得的一次粒径 Rietveld法（含RIETAN-94）为0.08〜0.3。 通过在600℃〜900℃的温度下烧成而获得粒子的方法制造氧化铈研磨剂浆料，然后粉碎，然后将所得的氧化铈粒子分散在培养基中。

公开(公告)号：US06221118B1

公开(公告)日：2001-04-24

申请号：US09269650

申请日：1999-08-10

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

IPC分类号： C09K314

CPC分类号： C09K3/1463 ,  C01F17/0043 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/31053

摘要： This invention provides a cerium oxide abrasive with which the surfaces of substrates such as SiO2 insulating films can be polished at a high rate without causing scratches. The abrasive of the present invention comprises a slurry comprising cerium oxide particles whose primary particles have a diameter of from 10 nm to 600 nm and a median diameter of from 30 nm to 250 nm and slurry particles have a median diameter of from 150 nm to 600 nm and a maximum diameter of 3,000 nm or smaller, the cerium oxide particles being dispersed in a medium.

摘要翻译： 本发明提供一种氧化铈研磨剂，能够高速率地抛光SiO 2绝缘膜等基板的表面，而不产生划痕。 本发明的研磨剂包括包含氧化铈颗粒的浆料，其一次颗粒的直径为10nm至600nm，中值粒径为30nm至250nm，浆料颗粒的中值粒径为150nm至600nm nm，最大直径为3000nm以下，氧化铈粒子分散在介质中。

公开(公告)号：US08137159B2

公开(公告)日：2012-03-20

申请号：US13217447

申请日：2011-08-25

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： B24B1/00

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

公开(公告)号：US07871308B2

公开(公告)日：2011-01-18

申请号：US11484611

申请日：2006-07-12

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： B24B1/00 ,  C09C1/68

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

摘要翻译： 为了在不刮擦表面的情况下以高速率抛光SiO 2绝缘膜等的抛光目标表面，本发明提供了一种研磨剂，其包含包含介质的浆料，并分散在其中至少一个i）氧化铈颗粒，其由至少两个 微晶并且具有晶界或堆积密度不高于6.5g / cm 3，和ii）具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

公开(公告)号：US06863700B2

公开(公告)日：2005-03-08

申请号：US09782241

申请日：2001-02-13

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

IPC分类号： C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321 ,  C09G1/04 ,  B24B1/00

CPC分类号： C09K3/1463 ,  C01F17/0043 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/31053

摘要： A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

摘要翻译： 一种分散在介质中的氧化铈磨料浆料，其一次粒子的中值粒径为30nm〜250nm，最大粒径为600nm以下，比表面积为7〜45μm m 2 / g，浆料颗粒的中值粒径为150nm〜600nm。 氧化铈颗粒具有结构参数Y，表示通过X射线Rietvelt方法（用RIETAN-94）获得的各向同性微应变为0.01至0.70，结构参数X表示通过X射线获得的一次粒径 Rietvelt法（用RIETAN-94）为0.08〜0.3。 通过在600℃〜900℃的温度下烧成而获得粒子的方法制造氧化铈研磨剂浆料，然后粉碎，然后将所得的氧化铈粒子分散在培养基中。

公开(公告)号：US08162725B2

公开(公告)日：2012-04-24

申请号：US11878504

申请日：2007-07-25

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： B24B1/00

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

摘要翻译： 为了在不刮擦表面的情况下以高速率抛光SiO 2绝缘膜等的抛光目标表面，本发明提供了一种研磨剂，其包含包含介质的浆料，并分散在其中至少一个i）氧化铈颗粒，其由至少两个 微晶并且具有晶界或堆积密度不高于6.5g / cm 3，和ii）具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

公开(公告)号：US07708788B2

公开(公告)日：2010-05-04

申请号：US10960941

申请日：2004-10-12

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

IPC分类号： C09G1/02 ,  C09G1/04 ,  C09K3/14

CPC分类号： C09K3/1463 ,  C01F17/0043 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/31053

摘要： A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

摘要翻译： 一种分散在介质中的氧化铈磨料浆料，其一次粒子的中值粒径为30nm〜250nm，最大粒径为600nm以下，比表面积为7〜45μm m.2 / g，浆料颗粒的中值粒径为150nm〜600nm。 氧化铈颗粒具有结构参数Y，表示通过X射线Rietveld方法（用RIETAN-94）获得的各向同性微应变为0.01至0.70，结构参数X表示通过X射线获得的一次粒径 Rietveld法（含RIETAN-94）为0.08〜0.3。 通过在600℃〜900℃的温度下烧成而获得粒子的方法制造氧化铈研磨剂浆料，然后粉碎，然后将所得的氧化铈粒子分散在培养基中。

公开(公告)号：US20080271383A1

公开(公告)日：2008-11-06

申请号：US12170587

申请日：2008-07-10

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： C08J5/14 ,  C08K3/22

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

摘要翻译： 本发明提供一种研磨剂，其包含含有介质的浆料，其中分散有i）至少一种，其中i） 由至少两个晶体构成并具有晶界或堆积密度不高于6.5g / cm 3的氧化铈颗粒和ii）具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。