公开(公告)号：US06746196B1

公开(公告)日：2004-06-08

申请号：US09889148

申请日：2001-07-12

申请人： Jun Ozawa ,  Jun Hirose ,  Eiji Hirose ,  Hiroshi Koizumi

发明人： Jun Ozawa ,  Jun Hirose ,  Eiji Hirose ,  Hiroshi Koizumi

IPC分类号： B65G4907

CPC分类号： H01L21/68707 ,  H01L21/67742 ,  H01L21/6835 ,  Y10S414/139

摘要： A vacuum treatment device, comprising a vacuum treatment chamber (1) etching a semiconductor wafer (W) as a body to be treated and a preliminary vacuum chamber (2) communicating with the vacuum treatment chamber (1), wherein a transfer arm (5) and first and second buffers (6, 7) for temporarily supporting the wafer (W) are installed in the preliminary vacuum chamber (2), the transfer arm (5) is provided with a flexible arm part (5a) and a support part (16) supporting the wafer (W), the arm part (5a) is extended and retracted by the rotations of a drive side swing arm (14) and a driven side swing arm (15) forming the arm (5a) so as to move the support part (16) straight forward and backward while maintaining it in its attitude, and the first and second buffers (6, 7) are disposed on the motion route of the support part (16) of the transfer arm (5).

摘要翻译： 1.一种真空处理装置，其特征在于，具备对作为被处理体的半导体晶片（W）进行蚀刻的真空处理室（1）和与所述真空处理室（1）连通的预备真空室（2），其特征在于， ）和用于临时支撑晶片（W）的第一和第二缓冲器（6,7）安装在预备真空室（2）中，传送臂（5）设置有柔性臂部分（5a）和支撑部分 （16）支撑晶片（W）时，通过驱动侧摆臂（14）和形成臂（5a）的从动侧摆臂（15）的旋转使臂部（5a）伸长和缩回，从而 在保持其姿态的同时将支撑部（16）向前后方向移动，第一缓冲器（6,7）设置在传送臂（5）的支撑部（16）的运动路径上。

公开(公告)号：US06305895B1

公开(公告)日：2001-10-23

申请号：US09468112

申请日：1999-12-21

申请人： Jun Ozawa ,  Jun Hirose ,  Eiji Hirose ,  Makoto Ohara

发明人： Jun Ozawa ,  Jun Hirose ,  Eiji Hirose ,  Makoto Ohara

IPC分类号： B65G4907

CPC分类号： H01L21/67742 ,  H01L21/67748 ,  Y10S414/139 ,  Y10S414/141

摘要： A transfer system 7 for carrying a wafer W into/out of a process chamber 4 is provided in a box 10 defining a load-lock chamber 3. The box 10 is divided into a first chamber 11 and a second chamber 12. A transfer arm 21 for carrying the wafer W is provided in the first chamber 11. A linearly moving system 14 for linearly moving the transfer arm 21 is provided in the second chamber 12. The internal pressure in the first chamber is set to be higher than the internal pressure in the second chamber.

摘要翻译： 用于将晶片W输入/离开处理室4的传送系统7设置在限定了负载锁定室3的盒子10中。盒子10被分成第一室11和第二室12.传送臂 在第一室11中设置有用于承载晶片W的21。在第二室12中设置有用于使传送臂21直线移动的线性移动系统14.第一室中的内部压力被设定为高于内部压​​力 在第二个房间。

公开(公告)号：USD459254S1

公开(公告)日：2002-06-25

申请号：US29131294

申请日：2000-10-19

申请人： Jun Hirose ,  Eiji Hirose ,  Jun Ozawa ,  Takaaki Hirooka

设计人： Jun Hirose ,  Eiji Hirose ,  Jun Ozawa ,  Takaaki Hirooka

公开(公告)号：US06908864B2

公开(公告)日：2005-06-21

申请号：US10149678

申请日：2000-12-14

申请人： Eiji Hirose ,  Noriyuki Iwabuchi ,  Takeshi Yokouchi ,  Shingo Suzuki

发明人： Eiji Hirose ,  Noriyuki Iwabuchi ,  Takeshi Yokouchi ,  Shingo Suzuki

IPC分类号： H01L21/302 ,  G05D16/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01L21/67253 ,  H01J37/32449 ,  H01J37/32935 ,  H01J37/3299

摘要： First and second pressure sensors 132 and 134 that perform pressure detection over different pressure detection ranges from each other detect the pressure within a process chamber 102 of an etching device 100. A pressure controller 144 selects optimal pressure data in correspondence to the pressure inside the process chamber from the pressure data provided by the first and second pressure sensors 132 and 134. It also analyzes the selected pressure data at a resolution selected in correspondence to the pressure inside the process chamber 102 and thus obtains pressure data achieving a predetermined data density. The pressure controller 134 controls a pressure control valve 130 so as to ensure that the pressure data match preset pressure data.

公开(公告)号：US06485602B2

公开(公告)日：2002-11-26

申请号：US09906731

申请日：2001-07-18

申请人： Eiji Hirose

发明人： Eiji Hirose

IPC分类号： H01L2100

CPC分类号： H01J37/32082 ,  H01J37/32183 ,  H01L21/31116

摘要： The present invention concerns a plasma processing apparatus for processing a processing object by applying two types of high-frequency power with different frequencies to generate plasma. A first high-frequency line is provided with a first filter circuit for attenuating a high-frequency current from a second high-frequency power supply. A second high-frequency line is provided with a second filter circuit for attenuating a high-frequency current from a first high-frequency power supply. The first filter circuit is provided with a variable capacitor for changing a circuit constant. For changing the circuit constant, the variable capacitor is varied so that a resonance point becomes greater than an optimum resonance point most attenuating a high frequency in the second high-frequency power supply. Doing so decreases a sputter rate of the generated plasma affected on a wall surface of the processing chamber.

摘要翻译： 本发明涉及一种通过应用具有不同频率的两种类型的高频功率来处理处理对象的等离子体处理装置，以产生等离子体。 第一高频线路设置有用于衰减来自第二高频电源的高频电流的第一滤波电路。 第二高频线路设置有用于衰减来自第一高频电源的高频电流的第二滤波电路。 第一滤波器电路设置有用于改变电路常数的可变电容器。 为了改变电路常数，改变可变电容器，使得谐振点变得大于在第二高频电源中最高衰减高频的最佳谐振点。 这样做会降低在处理室的壁表面上产生的等离子体的溅射速率。

公开(公告)号：US07156949B2

公开(公告)日：2007-01-02

申请号：US10851325

申请日：2004-05-24

申请人： Eiji Hirose

发明人： Eiji Hirose

IPC分类号： H01L21/00

CPC分类号： H01J37/32082 ,  H01J37/32183 ,  H01L21/31116

摘要： The present invention concerns a plasma processing apparatus for processing a processing object by applying two types of high-frequency power with different frequencies to generate plasma. A first high-frequency line is provided with a first filter circuit for attenuating a high-frequency current from a second high-frequency power supply. A second high-frequency line is provided with a second filter circuit for attenuating a high-frequency current from a first high-frequency power supply. The first filter circuit is provided with a variable capacitor for changing a circuit constant. For changing the circuit constant, the variable capacitor is varied so that a resonance point becomes greater than an optimum resonance point most attenuating a high frequency in the second high-frequency power supply. Doing so decreases a sputter rate of the generated plasma affected on a wall surface of the processing chamber.

摘要翻译： 本发明涉及一种通过应用具有不同频率的两种类型的高频功率来处理处理对象的等离子体处理装置，以产生等离子体。 第一高频线路设置有用于衰减来自第二高频电源的高频电流的第一滤波电路。 第二高频线路设置有用于衰减来自第一高频电源的高频电流的第二滤波电路。 第一滤波器电路设置有用于改变电路常数的可变电容器。 为了改变电路常数，改变可变电容器，使得谐振点变得大于在第二高频电源中最高衰减高频的最佳谐振点。 这样做会降低在处理室的壁表面上产生的等离子体的溅射速率。

公开(公告)号：US20050115677A1

公开(公告)日：2005-06-02

申请号：US11028239

申请日：2005-01-04

申请人： Kazunori Nagahata ,  Eiji Hirose

发明人： Kazunori Nagahata ,  Eiji Hirose

IPC分类号： C03C15/00 ,  C23F1/00 ,  H01L21/00 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32183

摘要： A plasma etching apparatus includes an upper electrode and a lower electrode (susceptor) on which a semiconductor wafer is disposed, the upper and lower electrodes being arranged within a process chamber, a first high frequency power source for applying a first high frequency power having a frequency not lower than 50 MHz to the upper electrode, a second high frequency power source for applying a high frequency power having a frequency not lower than 2 MHz and lower than the frequency of the first high frequency power to the upper and lower electrodes. The frequency of the high frequency power applied by the second high frequency source to the upper electrode is equal to that of the high frequency power applied by the second high frequency source to the lower electrode, and the high frequency power applied by the second high frequency source to the upper electrode has a reverse phase relative to the high frequency power applied by the second high frequency source to the lower electrode. The inner space of the process chamber is maintained at a predetermined reduced pressure state, and supplied with an etching gas. The high frequency power applied from the second high frequency source to the upper electrode permits increasing the thickness of the plasma sheath formed on the upper electrode.

摘要翻译： 一种等离子体蚀刻装置包括：上部电极和下部电极（基座），其上设置有半导体晶片，上部和下部电极设置在处理室内;第一高频电源，用于施加第一高频电力，其具有 频率不低于50MHz;第二高频电源，用于将具有不低于2MHz的频率并且低于第一高频功率的频率的高频功率施加到上电极和下电极。 由第二高频源施加到上电极的高频功率的频率等于由第二高频源施加到下电极的高频功率的频率，并且由第二高频源施加的高频功率 源极到上电极具有相对于由第二高频源施加到下电极的高频功率的反相。 处理室的内部空间保持在预定的减压状态，并且供给蚀刻气体。 从第二高频源施加到上电极的高频功率允许增加形成在上电极上的等离子体护套的厚度。

公开(公告)号：US20140232610A1

公开(公告)日：2014-08-21

申请号：US13982345

申请日：2012-01-19

申请人： Yoko Shigemoto ,  Eiji Hirose ,  Tomoya Ishida

发明人： Yoko Shigemoto ,  Eiji Hirose ,  Tomoya Ishida

IPC分类号： H01Q1/40

CPC分类号： H01Q1/40 ,  H01Q1/243 ,  H01Q1/36 ,  H01Q5/378 ,  H01Q7/00 ,  H01Q9/42 ,  H01Q21/28

摘要： An antenna device includes a first antenna element made of a conductive metallic plate and formed in a shape of a meander; a second antenna element made of another conductive metallic plate and formed in another shape of a meander; and a sealing material which is made of a high-dielectric material and is configured to seal the first and second antenna elements by the sealing material, wherein the first antenna element is arranged in parallel with the second antenna element, and wherein the first and second antenna elements are embedded inside the sealing material by insert molding.

摘要翻译： 天线装置包括由导电金属板制成并形成为曲折形状的第一天线元件; 第二天线元件，由另一导电金属板制成并形成为另一形状的曲折; 以及密封材料，其由高介电材料制成并且被构造成通过所述密封材料密封所述第一和第二天线元件，其中所述第一天线元件与所述第二天线元件平行布置，并且其中所述第一和第二天线元件 通过嵌入成型将天线元件嵌入密封材料的内部。

公开(公告)号：US07265963B2

公开(公告)日：2007-09-04

申请号：US11085525

申请日：2005-03-22

申请人： Eiji Hirose

发明人： Eiji Hirose

IPC分类号： H01L21/306

CPC分类号： H01L21/6835 ,  C23C16/4581 ,  H01J37/20 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32174 ,  H01L21/6833 ,  H01L2924/19041 ,  Y10T279/23

摘要： According to the present invention, there is provided a holding mechanism of an object to be processed W, which comprises a relay switch to electrically disconnect a detection circuit having the function of detecting the stripped state of a protective film of a lower electrode and removing a residual charge from the direct-current component in a high-frequency power supply line from the power source supply line and which disconnects the detection circuit from the lower electrode in accordance with a process condition to prevent abnormal electric discharge and which electrically connects the detection circuit to the lower electrode to detect the stripped state (life) of the protective film of the lower electrode from the direct-current component in a plasma discharge or to remove a charge into the lower electrode or a residual charge during plasma processing under a process condition not causing abnormal electric discharge or at maintenance time.

摘要翻译： 根据本发明，提供了一种被处理物W的保持机构，该保持机构包括：继电器开关，用于断开具有检测下部电极的保护膜的剥离状态的功能的检测电路， 来自电源线的高频电源线中的直流分量的残留电荷，并且根据防止异常放电的处理条件将检测电路与下电极断开，并且将检测电路 到下部电极，以在等离子体放电中检测下部电极的保护膜从直流成分的剥离状态（寿命），或者在处理条件下等离子体处理期间去除下部电极的电荷或残留电荷 不会导致放电异常或维护时间。

公开(公告)号：US20050176258A1

公开(公告)日：2005-08-11

申请号：US11102709

申请日：2005-04-11

申请人： Eiji Hirose ,  Noriyuki Iwabuchi ,  Takeshi Yokouchi ,  Shingo Suzuki

发明人： Eiji Hirose ,  Noriyuki Iwabuchi ,  Takeshi Yokouchi ,  Shingo Suzuki

IPC分类号： H01L21/302 ,  G05D16/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/461

CPC分类号： H01L21/67253 ,  H01J37/32449 ,  H01J37/32935 ,  H01J37/3299

摘要： First and second pressure sensors 132 and 134 that perform pressure detection over different pressure detection ranges from each other detect the pressure within a process chamber 102 of an etching device 100. A pressure controller 144 selects optimal pressure data in correspondence to the pressure inside the process chamber from the pressure data provided by the first and second pressure sensors 132 and 134. It also analyzes the selected pressure data at a resolution selected in correspondence to the pressure inside the process chamber 102 and thus obtains pressure data achieving a predetermined data density. The pressure controller 134 controls a pressure control valve 130 so as to ensure that the pressure data match preset pressure data.

摘要翻译： 在不同压力检测范围内执行压力检测的第一和第二压力传感器132和134检测蚀刻装置100的处理室102内的压力。 压力控制器144根据由第一和第二压力传感器132和134提供的压力数据选择对应于处理室内的压力的最佳压力数据。 它还以与处理室102内的压力相对应地选择的分辨率来分析所选择的压力数据，从而获得实现预定数据密度的压力数据。 压力控制器134控制压力控制阀130，以确保压力数据与预设的压力数据相匹配。