公开(公告)号：US08716747B2

公开(公告)日：2014-05-06

申请号：US13366896

申请日：2012-02-06

申请人： Jun Saito ,  Sachiko Aoi ,  Takahide Sugiyama

发明人： Jun Saito ,  Sachiko Aoi ,  Takahide Sugiyama

IPC分类号： H01L29/66

CPC分类号： H01L27/0664 ,  H01L29/0834 ,  H01L29/32 ,  H01L29/7397 ,  H01L29/861

摘要： A diode region and an IGBT region are formed in a semiconductor layer of a semiconductor device. A lifetime controlled region is formed in the semiconductor layer. In a plan view, the lifetime controlled region has a first lifetime controlled region located in the diode region and a second lifetime controlled region located in a part of the IGBT region. The second lifetime controlled region extends from a boundary of the diode region and the IGBT region toward the IGBT region. In the plan view, a tip of the second lifetime controlled region is located in a forming area of the body region in the IGBT region.

摘要翻译： 二极管区域和IGBT区域形成在半导体器件的半导体层中。 在半导体层中形成寿命受控区域。 在平面图中，寿命受控区域具有位于二极管区域中的第一寿命受控区域和位于IGBT区域的一部分中的第二寿命受控区域。 第二寿命受控区域从二极管区域和IGBT区域的边界向IGBT区域延伸。 在平面图中，第二寿命受控区域的尖端位于IGBT区域的体区的形成区域中。

公开(公告)号：US09640651B2

公开(公告)日：2017-05-02

申请号：US15116288

申请日：2014-10-06

申请人： Hidefumi Takaya ,  Jun Saito ,  Akitaka Soeno ,  Kimimori Hamada ,  Shoji Mizuno ,  Sachiko Aoi ,  Yukihiko Watanabe

发明人： Hidefumi Takaya ,  Jun Saito ,  Akitaka Soeno ,  Kimimori Hamada ,  Shoji Mizuno ,  Sachiko Aoi ,  Yukihiko Watanabe

IPC分类号： H01L29/94 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/761 ,  H01L29/16

CPC分类号： H01L29/7811 ,  H01L21/761 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor device includes a termination trench surrounding a region in which a plurality of gate trenches is provided; a p-type lower end region being in contact with a lower end of the termination trench; a p-type outer circumference region being in contact with the termination trench from an outer circumferential side and exposed on a surface of the semiconductor device; a plurality of guard ring regions of a p-type provided on an outer circumferential side of the p-type outer circumference region and exposed on the surface; and an n-type outer circumference region separating the p-type outer circumference region from the guard ring regions and separating the guard ring regions from each another.

公开(公告)号：US09520465B2

公开(公告)日：2016-12-13

申请号：US14113276

申请日：2012-07-27

申请人： Yusuke Yamashita ,  Satoru Machida ,  Takahide Sugiyama ,  Jun Saito

发明人： Yusuke Yamashita ,  Satoru Machida ,  Takahide Sugiyama ,  Jun Saito

IPC分类号： H01L29/06 ,  H01L29/872 ,  H01L29/739 ,  H01L29/78 ,  H01L27/06 ,  H01L29/40 ,  H01L29/08 ,  H01L29/861 ,  H01L29/36 ,  H01L29/417 ,  H01L29/10 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/7813 ,  H01L27/0629 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0642 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/08 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7806 ,  H01L29/7839 ,  H01L29/8611 ,  H01L29/872

摘要： Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.

摘要翻译： 公开了能够在二极管切换时减少损耗的技术。 本说明书中公开的二极管包括阴极电极，由第一导电类型半导体制成的阴极区域，由低浓度第一导电类型半导体制成的漂移区域，由第二导电类型半导体制成的阳极区域，阳极电极 由金属制成的阻挡区域，形成在漂移区域和阳极区域之间并且由具有高于漂移区域的浓度的第一导电型半导体形成的势垒区域和形成为将阻挡区域连接到阳极的柱状区域 电极，并且由具有比屏障区域的浓度高的浓度的第一导电型半导体制成。 柱区域和阳极通过肖特基结连接。

公开(公告)号：US20140048847A1

公开(公告)日：2014-02-20

申请号：US14113276

申请日：2012-07-27

申请人： Yusuke Yamashita ,  Satoru Machida ,  Takahide Sugiyama ,  Jun Saito

发明人： Yusuke Yamashita ,  Satoru Machida ,  Takahide Sugiyama ,  Jun Saito

IPC分类号： H01L29/06 ,  H01L27/06 ,  H01L29/78 ,  H01L29/872 ,  H01L29/739

CPC分类号： H01L29/7813 ,  H01L27/0629 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0642 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/08 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7806 ,  H01L29/7839 ,  H01L29/8611 ,  H01L29/872

摘要： Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.

摘要翻译： 公开了能够在二极管切换时减少损耗的技术。 本说明书中公开的二极管包括阴极电极，由第一导电类型半导体制成的阴极区域，由低浓度第一导电类型半导体制成的漂移区域，由第二导电类型半导体制成的阳极区域，阳极电极 由金属制成的阻挡区域，形成在漂移区域和阳极区域之间并且由具有高于漂移区域的浓度的第一导电型半导体形成的势垒区域和形成为将阻挡区域连接到阳极的柱状区域 电极，并且由具有比屏障区域的浓度高的浓度的第一导电型半导体制成。 柱区域和阳极通过肖特基结连接。

公开(公告)号：US07423316B2

公开(公告)日：2008-09-09

申请号：US11596063

申请日：2005-05-12

申请人： Sachiko Kawaji ,  Masayasu Ishiko ,  Takahide Sugiyama ,  Masanori Usui ,  Jun Saito ,  Koji Hotta

发明人： Sachiko Kawaji ,  Masayasu Ishiko ,  Takahide Sugiyama ,  Masanori Usui ,  Jun Saito ,  Koji Hotta

IPC分类号： H01L29/94

CPC分类号： H01L29/1095 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397

摘要： The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− type body region (28). The n type semiconductor region (52) is isolated from an n+ type emitter region (32) and an n− type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).

摘要翻译： 可以在形成在IGBT的体区内的浮置状态的半导体区域的宽范围内获得空穴载流子的密集堆积。 在p型体区域（28）内形成有浮置电位的n型半导体区域（52）。 n型半导体区域（52）通过身体区域（28）与n + +型发射极区域（32）和n + SUP类型漂移区域（26）隔离 ）。 此外，形成第二电极（62），以经由绝缘膜（64）与半导体区域（52）的至少一部分相对。 第二电极（62）不与发射极区域（32）相对。

公开(公告)号：US20080012040A1

公开(公告)日：2008-01-17

申请号：US11596063

申请日：2005-05-12

申请人： Jun Saito ,  Koji Hotta ,  Sachiko Kawaji ,  Masayasu Ishiko ,  Takahide Sugiyama ,  Masanori Usui

发明人： Jun Saito ,  Koji Hotta ,  Sachiko Kawaji ,  Masayasu Ishiko ,  Takahide Sugiyama ,  Masanori Usui

IPC分类号： H01L29/739

CPC分类号： H01L29/1095 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397

摘要： The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− type body region (28). The n type semiconductor region (52) is isolated from an n+ type emitter region (32) and an n− type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).

摘要翻译： 可以在形成在IGBT的体区内的浮置状态的半导体区域的宽范围内获得空穴载流子的密集堆积。 在p型体区域（28）内形成有浮置电位的n型半导体区域（52）。 n型半导体区域（52）通过身体区域（28）与n + +型发射极区域（32）和n + SUP类型漂移区域（26）隔离 ）。 此外，形成第二电极（62），以经由绝缘膜（64）与半导体区域（52）的至少一部分相对。 第二电极（62）不与发射极区域（32）相对。

公开(公告)号：US20140231866A1

公开(公告)日：2014-08-21

申请号：US14347897

申请日：2011-09-28

申请人： Masaru Senoo ,  Kyosuke Miyagi ,  Tsuyoshi Nishiwaki ,  Jun Saito

发明人： Masaru Senoo ,  Kyosuke Miyagi ,  Tsuyoshi Nishiwaki ,  Jun Saito

IPC分类号： H01L29/739 ,  H01L29/66

CPC分类号： H01L29/66348 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/6634 ,  H01L29/7396 ,  H01L29/7397

摘要： An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face of the trench, and a gate electrode that is arranged inside the trench. When a distribution of a concentration of p-type impurities in the top body region and the floating region, which are located below the emitter region, is viewed along a thickness direction of a semiconductor substrate, the concentration of the p-type impurities decreases as a downward distance increases from an upper end of the top body region that is located below the emitter region, and assumes a local minimum value at a predetermined depth in the floating region.

摘要翻译： IGBT具有发射极区域，形成在发射极区域下方的顶部主体区域，形成在顶部主体区域下方的浮动区域，形成在浮动区域下方的底部区域，沟槽，栅极绝缘膜 覆盖沟槽的内表面和布置在沟槽内的栅电极。 当沿着半导体衬底的厚度方向观察位于发射极区域下方的顶体区域和浮动区域中的p型杂质浓度的分布时，p型杂质的浓度随着 向下的距离从位于发射极区域下方的顶部主体区域的上端增加，并且在浮动区域中在预定深度处呈现局部最小值。

公开(公告)号：US08794606B2

公开(公告)日：2014-08-05

申请号：US12673689

申请日：2008-08-26

申请人： Nobuo Kubo ,  Hiroshi Yanagase ,  Jun Saito ,  Masatomo Nishizaka

发明人： Nobuo Kubo ,  Hiroshi Yanagase ,  Jun Saito ,  Masatomo Nishizaka

IPC分类号： F16F5/00

CPC分类号： F16F13/106

摘要： A liquid sealed vibration isolating device has an elastically movable diaphragm capable of preventing elastic deformation of a relief valve to realize high damping while preventing a cavitation phenomenon. The relief valve is provided in the elastic movable diaphragm arranged in a partition member in order to open and close a leak passage so as to prevent occurrence of the cavitation phenomenon. The relief valve is integrally formed with a fixing portion of the elastic movable diaphragm. There is provided an upwardly open concavity that the relief valve faces. The relief valve is made thicker and provided with an opening and closing adjustment groove at a basal portion of its inclined wall. The opening and closing adjustment groove is formed with a locally thin bending portion functioning as a starting point of bending in an opening and closing operation of the relief valve.

摘要翻译： 液体密封隔振装置具有能够防止安全阀的弹性变形以防止气蚀现象而实现高阻尼的弹性移动隔膜。 安全阀设置在布置在分隔构件中的弹性可动隔膜中，以便打开和关闭泄漏通道，以防止发生气蚀现象。 安全阀与弹性活动隔膜的固定部分整体形成。 提供了安全阀面对的向上开口的凹陷。 安全阀制成较厚，并在其倾斜壁的基部设置有开闭调节槽。 开关调节槽形成有局部薄的弯曲部，其作为安全阀的打开和关闭操作中的弯曲起点。

公开(公告)号：US08711126B2

公开(公告)日：2014-04-29

申请号：US13422958

申请日：2012-03-16

申请人： Jun Saito

发明人： Jun Saito

IPC分类号： G06F3/042

CPC分类号： G06F3/0423 ,  G06F3/0233 ,  G06F2203/04105

摘要： A specific information input region (B) individually specifying information to be input and an input mode switching region (C) used for changing an information input mode are placed on an information input region (A) set on a substrate. Each of these regions is displayed to be visible. An optical sensor detects a touched position on the information input region. Then, the touch operation in the input mode switching region (C) is detected according to the output of the optical sensor to selectively switch the information input mode among keyboard input, pen tablet input and mouse input. The output of the optical sensor is analyzed according to the set input mode to find out the information input by the touch operation.

摘要翻译： 分别指定要输入的信息的特定信息输入区域（B）和用于改变信息输入模式的输入模式切换区域（C）被放置在设置在基板上的信息输入区域（A）上。 这些区域中的每一个都显示为可见。 光学传感器检测信息输入区域上的触摸位置。 然后，根据光传感器的输出来检测输入模式切换区域（C）中的触摸操作，以便有选择地在键盘输入，笔图形输入和鼠标输入之间切换信息输入模式。 根据设定的输入模式对光学传感器的输出进行分析，以找出触摸操作输入的信息。

公开(公告)号：US08531857B2

公开(公告)日：2013-09-10

申请号：US12677131

申请日：2008-08-28

申请人： Akitaka Soeno ,  Jun Saito ,  Gehan Anil Joseph Amaratunga ,  Florin Udrea

发明人： Akitaka Soeno ,  Jun Saito ,  Gehan Anil Joseph Amaratunga ,  Florin Udrea

IPC分类号： H02M7/5387

CPC分类号： H01L29/7397 ,  H01L29/0834 ,  H03K17/08128 ,  H03K17/0828

摘要： In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel.

摘要翻译： 在形成合成电路的反向导通半导体器件中，可以将高于集电极的正电压的正电压施加到发射极。 在这种情况下，在形成有返回二极管的反向导通半导体器件的区域中，体接触区域用作阳极，漂移接触区域用作阴极，并且电流从阳极流到阴极。 此时当沟槽栅电极施加具有比集电极电位低的电压的电压时，在阴极内产生p型载流子，在返回二极管内增加载流子数量。 结果，返回二极管的正向压降降低，并且可以减少电力的恒定损失。 在使用其中开关元件和返回二极管反向并联连接的组合电路的电源装置中，电力损耗可以减小。