公开(公告)号：US08716747B2

公开(公告)日：2014-05-06

申请号：US13366896

申请日：2012-02-06

申请人： Jun Saito ,  Sachiko Aoi ,  Takahide Sugiyama

发明人： Jun Saito ,  Sachiko Aoi ,  Takahide Sugiyama

IPC分类号： H01L29/66

CPC分类号： H01L27/0664 ,  H01L29/0834 ,  H01L29/32 ,  H01L29/7397 ,  H01L29/861

摘要： A diode region and an IGBT region are formed in a semiconductor layer of a semiconductor device. A lifetime controlled region is formed in the semiconductor layer. In a plan view, the lifetime controlled region has a first lifetime controlled region located in the diode region and a second lifetime controlled region located in a part of the IGBT region. The second lifetime controlled region extends from a boundary of the diode region and the IGBT region toward the IGBT region. In the plan view, a tip of the second lifetime controlled region is located in a forming area of the body region in the IGBT region.

摘要翻译： 二极管区域和IGBT区域形成在半导体器件的半导体层中。 在半导体层中形成寿命受控区域。 在平面图中，寿命受控区域具有位于二极管区域中的第一寿命受控区域和位于IGBT区域的一部分中的第二寿命受控区域。 第二寿命受控区域从二极管区域和IGBT区域的边界向IGBT区域延伸。 在平面图中，第二寿命受控区域的尖端位于IGBT区域的体区的形成区域中。

公开(公告)号：US08952449B2

公开(公告)日：2015-02-10

申请号：US13210624

申请日：2011-08-16

申请人： Masaki Koyama ,  Yasushi Ookura ,  Akitaka Soeno ,  Tatsuji Nagaoka ,  Takahide Sugiyama ,  Sachiko Aoi ,  Hiroko Iguchi

发明人： Masaki Koyama ,  Yasushi Ookura ,  Akitaka Soeno ,  Tatsuji Nagaoka ,  Takahide Sugiyama ,  Sachiko Aoi ,  Hiroko Iguchi

IPC分类号： H01L29/06 ,  H01L29/861 ,  H01L21/263 ,  H01L21/266 ,  H01L29/08 ,  H01L29/32 ,  H01L29/739 ,  H01L21/265

CPC分类号： H01L29/8611 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/266 ,  H01L29/063 ,  H01L29/0834 ,  H01L29/32 ,  H01L29/7397

摘要： There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.

摘要翻译： 已知在IGBT区域中设置IGBT结构并且在二极管区域中设置二极管结构的IGBT半导体器件，IGBT面积和二极管面积都位于同一衬底内，并且IGBT区域与 二极管面积。 在这种类型的半导体器件中，当IGBT结构关断时，积聚在IGBT区域内的载流子流入二极管区域的现象。 为了防止这种现象，至少在所述IGBT区域内并与所述二极管区域相邻的子区域中提供载流子缩短寿命的区域。 在子区域中，省略了IGBT结构的发射极。

公开(公告)号：US20100276729A1

公开(公告)日：2010-11-04

申请号：US12743525

申请日：2008-12-02

申请人： Sachiko Aoi ,  Takahide Sugiyama ,  Takashi Suzuki ,  Akitaka Soeno ,  Tsuyoshi Nishiwaki

发明人： Sachiko Aoi ,  Takahide Sugiyama ,  Takashi Suzuki ,  Akitaka Soeno ,  Tsuyoshi Nishiwaki

IPC分类号： H01L29/739

CPC分类号： H01L29/7397 ,  H01L29/0834 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/66348 ,  H01L29/66734

摘要： IGBT 10 comprises an n+-type emitter region, an n−-type drift region, a p-type body region disposed between the emitter region and the drift region, a trench gate extending in the body region from the emitter region toward the drift region, and a projecting portion of an insulating material being in contact with a surface of the trench gate. At least a part of the projecting portion projects within the drift region.

摘要翻译： IGBT10包括n +型发射极区域，n型漂移区域，设置在发射极区域和漂移区域之间的p型体区域，在体区域中从发射极区域延伸到漂移区域的沟槽栅极 并且绝缘材料的突出部分与沟槽栅极的表面接触。 突出部分的至少一部分在漂移区域内突出。

公开(公告)号：US08716746B2

公开(公告)日：2014-05-06

申请号：US13205845

申请日：2011-08-09

申请人： Masaki Koyama ,  Yasushi Ookura ,  Akitaka Soeno ,  Tatsuji Nagaoka ,  Takahide Sugiyama ,  Sachiko Aoi ,  Hiroko Iguchi

发明人： Masaki Koyama ,  Yasushi Ookura ,  Akitaka Soeno ,  Tatsuji Nagaoka ,  Takahide Sugiyama ,  Sachiko Aoi ,  Hiroko Iguchi

IPC分类号： H01L29/66

CPC分类号： H01L29/1095 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397 ,  H01L29/8613

摘要： In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.

摘要翻译： 在半导体装置中，IGBT单元包括通过半导体衬底的基底层到半导体衬底的漂移层的沟槽，沟槽内表面上的栅极绝缘膜，栅极绝缘膜上的栅电极， 在基底层的表面部分中的第一导电型发射极区域和在基底层的表面部分中的第二导电类型的第一接触区域。 IGBT单元还包括设置在基极层内的第一导电型浮动层，以将基极层分离成包括发射极区域和第一接触区域的第一部分和与漂移层相邻的第二部分，以及层间绝缘膜 设置成覆盖栅电极的端部。 二极管单元在基层的表面部分包括第二导电类型的第二接触区域。

公开(公告)号：US20120043581A1

公开(公告)日：2012-02-23

申请号：US13205845

申请日：2011-08-09

申请人： Masaki KOYAMA ,  Yasushi Ookura ,  Akitaka Soeno ,  Tatsuji Nagaoka ,  Takahide Sugiyama ,  Sachiko Aoi ,  Hiroko Iguchi

发明人： Masaki KOYAMA ,  Yasushi Ookura ,  Akitaka Soeno ,  Tatsuji Nagaoka ,  Takahide Sugiyama ,  Sachiko Aoi ,  Hiroko Iguchi

IPC分类号： H01L29/739

CPC分类号： H01L29/1095 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397 ,  H01L29/8613

摘要： In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.

摘要翻译： 在半导体装置中，IGBT单元包括通过半导体衬底的基底层到半导体衬底的漂移层的沟槽，沟槽内表面上的栅极绝缘膜，栅极绝缘膜上的栅电极， 在基底层的表面部分中的第一导电型发射极区域和在基底层的表面部分中的第二导电类型的第一接触区域。 IGBT单元还包括设置在基极层内的第一导电型浮动层，以将基极层分离成包括发射极区域和第一接触区域的第一部分和与漂移层相邻的第二部分，以及层间绝缘膜 设置成覆盖栅电极的端部。 二极管单元在基层的表面部分包括第二导电类型的第二接触区域。

公开(公告)号：US09640651B2

公开(公告)日：2017-05-02

申请号：US15116288

申请日：2014-10-06

申请人： Hidefumi Takaya ,  Jun Saito ,  Akitaka Soeno ,  Kimimori Hamada ,  Shoji Mizuno ,  Sachiko Aoi ,  Yukihiko Watanabe

发明人： Hidefumi Takaya ,  Jun Saito ,  Akitaka Soeno ,  Kimimori Hamada ,  Shoji Mizuno ,  Sachiko Aoi ,  Yukihiko Watanabe

IPC分类号： H01L29/94 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/761 ,  H01L29/16

CPC分类号： H01L29/7811 ,  H01L21/761 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor device includes a termination trench surrounding a region in which a plurality of gate trenches is provided; a p-type lower end region being in contact with a lower end of the termination trench; a p-type outer circumference region being in contact with the termination trench from an outer circumferential side and exposed on a surface of the semiconductor device; a plurality of guard ring regions of a p-type provided on an outer circumferential side of the p-type outer circumference region and exposed on the surface; and an n-type outer circumference region separating the p-type outer circumference region from the guard ring regions and separating the guard ring regions from each another.

公开(公告)号：US09041053B2

公开(公告)日：2015-05-26

申请号：US14373992

申请日：2013-01-23

申请人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

发明人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

IPC分类号： H01L29/66 ,  H01L27/06 ,  H01L29/739 ,  H01L29/08 ,  H01L29/40 ,  H01L29/861 ,  H01L29/06

摘要： When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

公开(公告)号：US09153575B2

公开(公告)日：2015-10-06

申请号：US14373992

申请日：2013-01-23

申请人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

发明人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

IPC分类号： H01L29/66 ,  H01L27/06 ,  H01L29/739 ,  H01L29/08 ,  H01L29/40 ,  H01L29/861 ,  H01L29/06

CPC分类号： H01L27/0664 ,  H01L29/0646 ,  H01L29/0834 ,  H01L29/407 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/861

摘要： When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

摘要翻译： 当从上方观察半导体器件的半导体衬底时，隔离区域，IGBT区域和二极管区域都彼此相邻地形成。 在隔离区域中形成连接到体区和阳极区的深区。 在半导体衬底内部跨越隔离区域，IGBT区域和二极管区域形成漂移区域。 在半导体衬底的下表面上暴露的区域中形成有跨越隔离区域，IGBT区域和二极管区域以及位于二极管区域中的阴极区域的集电极区域。 在二极管区域中，集电极区域和阴极区域之间的边界处于跨越隔离区域和二极管区域之间的边界的横截面，并且分隔隔离区域和二极管区域。 形成在隔离区域的集电极区域的掺杂浓度比IGBT区域的集电极区域高。

公开(公告)号：US09379225B2

公开(公告)日：2016-06-28

申请号：US14767370

申请日：2013-02-13

申请人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

发明人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L27/06

CPC分类号： H01L29/7397 ,  H01L27/0629 ,  H01L27/0664 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095

摘要： A semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate is disclosed. The IGBT region includes: a body layer of a first conductivity type that is formed on a front surface of the semiconductor substrate; a body contact layer of the first conductivity type that is partially formed on a front surface of the body layer and has a higher impurity concentration of the first conductivity type than the body layer; an emitter layer of a second conductivity type that is partially formed on the front surface of the body layer; a drift layer; a collector layer; and a gate electrode. In the semiconductor device, a part of the body contact layer placed at a long distance from the diode region is made larger than a part of the body contact layer placed at a short distance from the diode region.

摘要翻译： 公开了在一个半导体衬底上形成IGBT区域和二极管区域的半导体器件。 IGBT区域包括：形成在半导体衬底的前表面上的第一导电类型的主体层; 所述第一导电类型的体接触层部分地形成在所述主体层的前表面上，并且具有比所述主体层更高的第一导电类型的杂质浓度; 第二导电类型的发射极层，部分地形成在所述主体层的前表面上; 漂移层 收集层; 和栅电极。 在半导体器件中，与二极管区域长距离放置的身体接触层的一部分被制成大于放置在与二极管区域相距很短距离的身体接触层的一部分。

公开(公告)号：US09024330B2

公开(公告)日：2015-05-05

申请号：US14141174

申请日：2013-12-26

申请人： Yukihiko Watanabe ,  Sachiko Aoi ,  Masahiro Sugimoto ,  Akitaka Soeno ,  Shinichiro Miyahara

发明人： Yukihiko Watanabe ,  Sachiko Aoi ,  Masahiro Sugimoto ,  Akitaka Soeno ,  Shinichiro Miyahara

IPC分类号： H01L29/47 ,  H01L29/45 ,  H01L29/16 ,  H01L21/285 ,  H01L29/78 ,  H01L21/04

CPC分类号： H01L29/47 ,  H01L21/0485 ,  H01L21/28518 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7806 ,  H01L29/7813

摘要： A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming a Schottky electrode in a second area on the one of the main surfaces of the silicon carbide layer with self alignment. The second area is exposed where the ohmic electrode is not formed.

摘要翻译： 一种制造半导体器件的方法包括：在碳化硅层的一个主表面上的第一区域中形成欧姆电极，将欧姆电极硅化，并在第二区域中形成肖特基电极 具有自对准的碳化硅层。 在没有形成欧姆电极的情况下暴露第二区域。