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    Gate insulating material, gate insulating film and organic field-effect transistor
    6.
    发明授权
    Gate insulating material, gate insulating film and organic field-effect transistor 有权
    栅极绝缘材料，栅极绝缘膜和有机场效应晶体管

    公开(公告)号：US09048445B2

    公开(公告)日：2015-06-02

    申请号：US12933417

    申请日：2009-02-27

    申请人： Seiichiro Murase ,  Takenori Fujiwara ,  Yukari Jo ,  Jun Tsukamoto

    发明人： Seiichiro Murase ,  Takenori Fujiwara ,  Yukari Jo ,  Jun Tsukamoto

    IPC分类号： H01L29/78 ,  H01L51/05 ,  C08G59/30 ,  C08G59/32 ,  C08G65/20 ,  C08G77/14 ,  C09D163/00 ,  H01L21/02 ,  H01L21/312 ,  G03F7/075 ,  H01B3/40 ,  H01B3/46 ,  H01L51/00

    CPC分类号： H01L51/052 ,  C08G59/306 ,  C08G59/3281 ,  C08G65/20 ,  C08G77/14 ,  C09D163/00 ,  G03F7/0757 ,  H01B3/40 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0545

    摘要： To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component.A gate insulating material containing a polysiloxane having, as copolymerization components, at least a silane compound represented by the general formula (1): R1mSi(OR2)4-m  (1), wherein R1 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R1s are present, R1s may be the same or different, R2 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R2s are present, R2s may be the same or different, and m represents an integer of 1 to 3, and an epoxy group-containing silane compound represented by the general formula (2): R3nR4lSi(OR5)4-n-1  (2), wherein R3 represents an alkyl group or a cycloalkyl group having one or more epoxy groups in a part of a chain and in the case where a plurality of R3s are present, R3s may be the same or different, R4 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R4s are present, R4s may be the same or different, R5 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R5s are present, R5s may be the same or different, l represents an integer of 0 to 2, and n represents 1 or 2 (however, l+n≦3).

    摘要翻译： 为了提供耐化学性高的栅极绝缘材料，具有优异的抗蚀剂和有机半导体涂布液的涂布性，并且具有较小的滞后性，栅极绝缘膜和使用该绝缘材料的FET通过具有含环氧基的聚硅氧烷 硅烷化合物作为共聚成分。 含有作为共聚成分的至少一种由通式（1）表示的硅烷化合物的聚硅氧烷的栅绝缘材料：R1mSi（OR2）4-m（1），其中R1表示氢，烷基，环烷基 ，杂环基，芳基，杂芳基或烯基，在存在多个R 1的情况下，R 1可以相同或不同，R 2表示烷基或环烷基，在 存在多个R 2，R 2可以相同或不同，m表示1〜3的整数，和由通式（2）表示的含环氧基的硅烷化合物：R3nR4lSi（OR5）4-n- 1（2）其中R3表示一部分链中具有一个或多个环氧基的烷基或环烷基，在存在多个R 3的情况下，R 3可以相同或不同，R 4表示氢 ，烷基，环烷基，杂环基，芳基g 稠环，杂芳基或烯基，在存在多个R 4的情况下，R 4可以相同或不同，R 5表示烷基或环烷基，在存在多个R 5的情况下， R5可以相同或不同，l表示0〜2的整数，n表示1或2（然而，l + n＆nlE; 3）。