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    Stereophonic sound reproduction system for compensating low frequency signal and method thereof
    1.
    发明授权
    Stereophonic sound reproduction system for compensating low frequency signal and method thereof 有权
    用于补偿低频信号的立体声声音再现系统及其方法

    公开(公告)号：US08085939B2

    公开(公告)日：2011-12-27

    申请号：US11394467

    申请日：2006-03-30

    申请人： Jun-Ho Lee ,  Dae Hee Youn ,  Young Cheol Park ,  Tae Ik Kang ,  Jeong-Tae Kim

    发明人： Jun-Ho Lee ,  Dae Hee Youn ,  Young Cheol Park ,  Tae Ik Kang ,  Jeong-Tae Kim

    IPC分类号： H04R5/00

    CPC分类号： H04R5/04

    摘要： A stereophonic sound reproduction system for compensating a low frequency signal and a method thereof, wherein a mono component signal for compensating low frequency signals which are attenuated when removing a crosstalk of inputted left and right signals inputted is calculated using an average value between the left and right signals, left and right compensation gains which are inversely proportional to an absolute value of a power difference value between the first left and right signals, an amplitude of the calculated mono component signal is controlled according to the left and right compensation gains, and thereafter the mono component signal with the controlled amplitude is added to the left and right signals when removing the crosstalk, whereby the left and right signals from which the crosstalk is removed and to which the mono component signal is added are outputted through left and right speakers to thus prevent distortion of the low frequency signals of original stereophonic sound with maintaining a stereophonic sound effect.

    摘要翻译： 一种用于补偿低频信号的立体声再现系统及其方法，其中用于补偿在输入的输入的左和右信号的串扰消除时被衰减的低频信号的单分量信号是使用左和右 右信号，与第一左右信号之间的功率差值的绝对值成反比的左右补偿增益，根据左右补偿增益来控制计算出的单分量信号的幅度，之后 当去除串扰时，具有受控幅度的单分量信号被加到左和右信号中，由此除去串扰的左和右信号并将单分量信号相加到左和右信号通过左和右扬声器输出到 从而防止原始立体声的低频信号失真 声音保持立体声效果。

    Stereophonic sound reproduction system for compensating low frequency signal and method thereof
    2.
    发明申请
    Stereophonic sound reproduction system for compensating low frequency signal and method thereof 有权
    用于补偿低频信号的立体声声音再现系统及其方法

    公开(公告)号：US20060239464A1

    公开(公告)日：2006-10-26

    申请号：US11394467

    申请日：2006-03-30

    申请人： Jun-Ho Lee ,  Dae Hee Youn ,  Young Cheol Park ,  Tae Ik Kang ,  Jeong-Tae Kim

    发明人： Jun-Ho Lee ,  Dae Hee Youn ,  Young Cheol Park ,  Tae Ik Kang ,  Jeong-Tae Kim

    IPC分类号： H04R5/00

    CPC分类号： H04R5/04

    摘要： A stereophonic sound reproduction system for compensating a low frequency signal and a method thereof, wherein a mono component signal for compensating low frequency signals which are attenuated when removing a crosstalk of inputted left and right signals inputted is calculated using an average value between the left and right signals, left and right compensation gains which are inversely proportional to an absolute value of a power difference value between the first left and right signals, an amplitude of the calculated mono component signal is controlled according to the left and right compensation gains, and thereafter the mono component signal with the controlled amplitude is added to the left and right signals when removing the crosstalk, whereby the left and right signals from which the crosstalk is removed and to which the mono component signal is added are outputted through left and right speakers to thus prevent distortion of the low frequency signals of original stereophonic sound with maintaining a stereophonic sound effect.

    摘要翻译： 一种用于补偿低频信号的立体声再现系统及其方法，其中用于补偿在输入的输入的左和右信号的串扰消除时被衰减的低频信号的单分量信号是使用左和右 右信号，与第一左右信号之间的功率差值的绝对值成反比的左右补偿增益，根据左右补偿增益来控制计算出的单分量信号的幅度，之后 当去除串扰时，具有受控幅度的单分量信号被加到左和右信号中，由此除去串扰的左和右信号并将单分量信号相加到左和右信号通过左和右扬声器输出到 从而防止原始立体声的低频信号失真 声音保持立体声效果。

    Image forming apparatus employing an electrical charge removal device with an improved configuration
    4.
    发明授权
    Image forming apparatus employing an electrical charge removal device with an improved configuration 有权
    采用具有改进结构的电荷去除装置的图像形成装置

    公开(公告)号：US08396394B2

    公开(公告)日：2013-03-12

    申请号：US12787931

    申请日：2010-05-26

    申请人： Jun-Ho Lee ,  Jeong-Yong Ju

    发明人： Jun-Ho Lee ,  Jeong-Yong Ju

    IPC分类号： G03G15/16

    CPC分类号： G03G21/06 ,  G03G15/163 ,  G03G21/1647 ,  G03G21/1661 ,  G03G21/168 ,  G03G2221/1642 ,  G03G2221/1654

    摘要： An image forming apparatus, including: a main body; an image carrying body disposed in the main body, a transfer unit and an electrical charge removal unit. The image forming apparatus forms a visible image on the image carrying body by carrying out charging, exposing and developing processes. The transfer unit transfers the visible image from the image carrying body to a printing medium. The electrical charge removal unit is configured to remove residual electrical charge from the printing medium, and is movable, in cooperation with at least one replaceable component part of the transfer unit, between an operable position at which the electrical charge removal unit is capable of removing the electrical charge from the printing medium and a non-interfering position at which the electrical charge removal unit does not interfere with the movement of the at least one replaceable component part of the transfer unit being received into or being removed from the main body for replacement.

    摘要翻译： 一种图像形成装置，包括：主体; 设置在主体中的图像承载体，转印单元和电荷去除单元。 图像形成装置通过进行充电，曝光和显影处理在图像载体上形成可见图像。 传送单元将可见图像从图像承载体传送到打印介质。 电荷去除单元被配置为从打印介质去除残留的电荷，并且可以与所述转印单元的至少一个可替换的组成部分协作地在所述电荷去除单元能够移除的可操作位置之间移动 来自打印介质的电荷和非干扰位置，在该非干扰位置，电荷消除单元不干扰转移单元的至少一个可更换部件的移动，该移动单元被接收到主体中或从主体移除以进行更换 。

    Methods of fabricating semiconductor devices including elevated source and drain regions
    5.
    发明授权
    Methods of fabricating semiconductor devices including elevated source and drain regions 有权
    制造包括升高的源极和漏极区域的半导体器件的方法

    公开(公告)号：US07867865B2

    公开(公告)日：2011-01-11

    申请号：US12166575

    申请日：2008-07-02

    申请人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    发明人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823456 ,  H01L21/823418 ,  H01L27/1052 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/4236 ,  H01L29/66621

    摘要： Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

    摘要翻译： 提供制造半导体器件的方法。 制备具有活性图案和隔离层图案的基板。 每个隔离层图案的上表面高于每个活动图案的上表面。 在基板上形成具有均匀厚度的间隔层。 蚀刻间隔层以在每个隔离层图案的侧壁上形成间隔物。 在每个有源图案上形成栅极结构。 对具有栅极结构的有源图案进行选择性外延生长（SEG）处理，以在活性图案上形成具有高于绝缘层图案的上表面的隔离的外延层。 还提供了相关的半导体器件。

    Semiconductor Devices Including Elevated Source and Drain Regions and Methods of Fabricating the Same
    8.
    发明申请
    Semiconductor Devices Including Elevated Source and Drain Regions and Methods of Fabricating the Same 有权
    包括提升源和排水区的半导体器件及其制造方法

    公开(公告)号：US20090008717A1

    公开(公告)日：2009-01-08

    申请号：US12166575

    申请日：2008-07-02

    申请人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    发明人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    IPC分类号： H01L21/336 ,  H01L27/088

    CPC分类号： H01L21/823456 ,  H01L21/823418 ,  H01L27/1052 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/4236 ,  H01L29/66621

    摘要： Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

    摘要翻译： 提供制造半导体器件的方法。 制备具有活性图案和隔离层图案的基板。 每个隔离层图案的上表面高于每个活动图案的上表面。 在基板上形成具有均匀厚度的间隔层。 蚀刻间隔层以在每个隔离层图案的侧壁上形成间隔物。 在每个有源图案上形成栅极结构。 对具有栅极结构的有源图案进行选择性外延生长（SEG）处理，以在活性图案上形成具有高于绝缘层图案的上表面的隔离的外延层。 还提供了相关的半导体器件。

    End-pumped vertical external cavity surface emitting laser
    10.
    发明申请
    End-pumped vertical external cavity surface emitting laser 有权

    公开(公告)号：US20060251140A1

    公开(公告)日：2006-11-09

    申请号：US11399391

    申请日：2006-04-07

    申请人： Jun-Ho Lee

    发明人： Jun-Ho Lee

    IPC分类号： H01S3/04 ,  H01S3/091 ,  H01S3/08 ,  H01S3/092

    CPC分类号： H01S5/183 ,  H01S3/109 ,  H01S5/02 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/041 ,  H01S5/14

    摘要： There is provided an end-pumped vertical external cavity surface emitting laser (VECSEL) in which a pump laser beam is incident on a laser chip at a right angle. In the external cavity surface emitting laser, a laser chip package is provided with a laser chip emitting light at a first wavelength by optical pumping, an external mirror is spaced apart from a top surface of the laser chip package to transmit a portion of the light emitted from the laser chip to the outside and to reflect the remainder to the laser chip, a heat sink is coupled to the bottom surface of the laser chip package to discharge heat generated by the laser chip, and a pump laser faces a bottom surface of the heat sink to emit pump light at a second wavelength perpendicular to the laser chip.