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    TRANSPARENT CONDUCTING FILM HAVING DOUBLE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    TRANSPARENT CONDUCTING FILM HAVING DOUBLE STRUCTURE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    具有双重结构的透明导电膜及其制造方法

    公开(公告)号：US20140083501A1

    公开(公告)日：2014-03-27

    申请号：US14118522

    申请日：2012-08-14

    申请人： Jun-Sik Cho ,  Sang-Hyun Park ,  Jae-Ho Yun ,  Joo-Hyung Park ,  Kee-Shik Shin ,  Jin-Su Yoo ,  Kyung-Hoon Yoon

    发明人： Jun-Sik Cho ,  Sang-Hyun Park ,  Jae-Ho Yun ,  Joo-Hyung Park ,  Kee-Shik Shin ,  Jin-Su Yoo ,  Kyung-Hoon Yoon

    IPC分类号： H01L31/0216 ,  H01L31/18

    CPC分类号： H01L31/02168 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02327 ,  H01L31/1888 ,  Y02E10/50

    摘要： Disclosed is a double-structure transparent conducting film having both excellent electrical characteristics and excellent light trapping performance, and a method of manufacturing the same.The double-structure transparent conducting film, which is used as a front antireflection film, a front electrode or a rear reflective film of a solar cell, includes: a light transmitting layer; and a light trapping layer whose one side is in contact with the light transmitting layer and whose other side is provided thereon with a surface textured structure; wherein the relationship of electrical conductivity A of the light transmitting layer and electrical conductivity a of the light trapping layer is A>a, and the relationship of etchability of the light transmitting layer and etchability of the light trapping layer is B

    摘要翻译： 公开了具有优异的电特性和优异的光捕获性能的双重结构的透明导电膜及其制造方法。 用作太阳能电池的正面抗反射膜，前电极或后反射膜的双结构透明导电膜包括：透光层; 以及其一侧与透光层接触并且其另一侧设置有表面纹理结构的光捕获层; 其中透光层的电导率A和光捕获层的电导率a之间的关系为A> a，透光层的蚀刻性与光捕获层的蚀刻性之间的关系为B

    Method for pretreating a polymer substrate using an ion beam for subsequent deposition of indium oxide or indium tin oxide
    6.
    发明授权
    Method for pretreating a polymer substrate using an ion beam for subsequent deposition of indium oxide or indium tin oxide 失效
    使用离子束预处理聚合物衬底以后续沉积氧化铟或氧化铟锡的方法

    公开(公告)号：US06787441B1

    公开(公告)日：2004-09-07

    申请号：US10182986

    申请日：2002-11-13

    申请人： Seok-Keun Koh ,  Young-Whoan Beag ,  Jun-Sik Cho ,  Young-Gun Han

    发明人： Seok-Keun Koh ,  Young-Whoan Beag ,  Jun-Sik Cho ,  Young-Gun Han

    IPC分类号： H01L2144

    CPC分类号： C23C14/022 ,  C23C14/086 ,  C23C14/22

    摘要： A method of depositing indium oxide or indium tin oxide thin film on a polymer substrate is disclosed. In the method, oxygen or argon ion beam is radiated on a polymer substrate by a constant accelerating energy in a vacuum state to modify the surface of the polymer substrate, on which an IO thin film or an ITO thin film is deposited while oxygen ion beam, argon ion beam or their mixture ion beam is being radiated in a vacuum state. In addition, ion beam is generated from a cold cathode ion source by using argon, oxygen or their mixture gas and sputtered at a target substance composed of In2O3 or In2O3 and SnO2, thereby an IO or an ITO thin film can be deposited on the surface-modified polymer substrate.

    摘要翻译： 公开了一种在聚合物基底上沉积氧化铟或氧化铟锡薄膜的方法。 在该方法中，氧气或氩离子束在真空状态下通过恒定的加速能量辐射在聚合物衬底上，以改变聚合物衬底的表面，其上沉积有IO薄膜或ITO薄膜，而氧离子束 氩离子束或其混合离子束在真空状态下被辐射。 此外，通过使用氩，氧或它们的混合气体从冷阴极离子源产生离子束并溅射在由In 2 O 3或In 2 O 3和SnO 2组成的目标物质上，从而可以在表面上沉积IO或ITO薄膜 改性聚合物基材。

    Method of forming ITO film
    8.
    发明授权
    Method of forming ITO film 失效
    ITO膜形成方法

    公开(公告)号：US07309405B2

    公开(公告)日：2007-12-18

    申请号：US10751972

    申请日：2004-01-07

    申请人： Jun-Sik Cho ,  Young-Gun Han ,  Young-Whoan Beag ,  Seok-Keun Koh

    发明人： Jun-Sik Cho ,  Young-Gun Han ,  Young-Whoan Beag ,  Seok-Keun Koh

    IPC分类号： C23C14/35

    CPC分类号： C23C14/3492 ,  C23C14/086 ,  C23C14/46 ,  H01L51/0021 ,  H01L2251/308

    摘要： Disclosed is a method of forming an ITO film by optimized sequential sputter deposition of seed and bulk layers having different sputter process conditions, which is applicable to various display devices, and more particularly, to an organic light-emitting device needing an ultra-planarized surface roughness. In forming a transparent conducting electrode of a display device on a transparent substrate with an ITO film including a seed layer and a bulk layer, a method of forming the ITO film includes a first sputter deposition step of forming the ITO film on the substrate with sputtering gas supplied to an ion source at an ambience of oxygen flowing in the vicinity of the substrate and a second sputter deposition step of forming the ITO film with the sputtering gas supplied to the ion source only, wherein the first and second sputter deposition steps have different process conditions, respectively and wherein the seed and bulk layers are deposited by the first or second sputter deposition step.

    摘要翻译： 公开了通过优化具有不同溅射工艺条件的溅射工艺条件的种子和体层的顺序溅射沉积来形成ITO膜的方法，其适用于各种显示装置，更具体地说，涉及需要超平面化表面的有机发光装置 粗糙度 在透明基板上形成透明导电电极的ITO膜包括种子层和体层之后，形成ITO膜的方法包括：第一溅射沉积步骤，用溅射法在衬底上形成ITO膜 以在衬底附近流动的氧的气氛供给到离子源的气体以及仅供给到离子源的溅射气体形成ITO膜的第二溅射沉积步骤，其中第一和第二溅射沉积步骤具有不同的 工艺条件，并且其中种子和体层通过第一或第二溅射沉积步骤沉积。