公开(公告)号：US4430581A

公开(公告)日：1984-02-07

申请号：US263279

申请日：1981-05-13

申请人： Jun-ichi Mogi ,  Kiyoshi Miyasaka ,  Seiji Enomoto ,  Shigeki Nozaki

发明人： Jun-ichi Mogi ,  Kiyoshi Miyasaka ,  Seiji Enomoto ,  Shigeki Nozaki

IPC分类号： H01L27/04 ,  G05F3/20 ,  G11C11/4074 ,  G11C11/408 ,  H01L21/822 ,  H01L27/02 ,  H01L29/78 ,  H03K3/01 ,  H03K3/353

CPC分类号： H01L27/0222 ,  G05F3/205 ,  G11C11/4074

摘要： A semiconductor circuit consisting of a dynamic-type circuit and a bias-voltage generating circuit. The bias-voltage generating circuit is comprised of a first bias-voltage generator and a second bias-voltage generator. The first generator absorbs a variable substrate current, the magnitude of which is proportional to the operating frequency of the dynamic-type circuit, while the second generator absorbs a substrate current, the magnitude of which is not proportional to the operating frequency of the dynamic-type circuit. Alternately, both portions of the substrate current may be absorbed via the same circuitry.

摘要翻译： 由动态型电路和偏压生成电路构成的半导体电路。 偏置电压产生电路由第一偏置电压发生器和第二偏置电压发生器组成。 第一发生器吸收可变衬底电流，其幅度与动态电路的工作频率成比例，而第二发生器吸收衬底电流，其幅度与动态电路的工作频率成比例， 型电路。 或者，衬底电流的两个部分可以通过相同的电路吸收。

公开(公告)号：US4224633A

公开(公告)日：1980-09-23

申请号：US908835

申请日：1978-05-23

申请人： Jun-ichi Mogi ,  Kiyoshi Miyasaka ,  Seiji Enomoto

发明人： Jun-ichi Mogi ,  Kiyoshi Miyasaka ,  Seiji Enomoto

IPC分类号： G11C11/404 ,  G11C11/409 ,  H01L29/423 ,  H01L29/78

CPC分类号： G11C11/404 ,  G11C11/409 ,  H01L29/4238

摘要： Self-aligned IGFET structure having a source region, a drain region and a gate electrode placed between the source and drain regions to define a channel region. The gate electrode is provided with an extended end portion on a relatively thick field oxide layer and having a length no less than a predetermined channel length on one side of the channel region so that the breakdown voltage is not decreased on that one side of the channel region.

摘要翻译： 自对准IGFET结构，其具有放置在源区和漏区之间的源极区，漏极区和栅极，以限定沟道区。 栅电极在相对厚的场氧化物层上设置有延伸的端部，并且在沟道区的一侧具有不小于预定沟道长度的长度，使得沟道一侧的击穿电压不降低 地区。

公开(公告)号：US4602356A

公开(公告)日：1986-07-22

申请号：US445921

申请日：1982-12-01

申请人： Shigeki Nozaki ,  Yoshihiro Takemae ,  Seiji Enomoto

发明人： Shigeki Nozaki ,  Yoshihiro Takemae ,  Seiji Enomoto

IPC分类号： G11C11/41 ,  G11C7/00 ,  G11C8/00 ,  G11C8/18 ,  G11C11/407 ,  G11C11/408 ,  G11C11/413

CPC分类号： G11C8/18

摘要： A semiconductor memory device operates under a so-called address multiplex access method. A row part of the device is enabled by receiving a row address strobe (RAS) signal. A column part of the device is enabled by simultaneously receiving both a column address strobe (CAS) signal and a timing control signal supplied from the row part during its enable state. A column address buffer in the column part is enabled by simultaneously receiving both the CAS signal and a timing control signal. The timing control signal is produced from a circuit when it detects and holds the RAS signal.

摘要翻译： 半导体存储器件以所谓的地址复用存取方式工作。 器件的一部分通过接收行地址选通（＆upbar＆R）信号来使能。 器件的列部分通过在其使能状态期间同时接收列地址选通（＆upbar＆C）信号和从行部分提供的定时控制信号来启用。 列部分中的列地址缓冲器通过同时接收＆upbar＆C信号和定时控制信号而被使能。 定时控制信号从电路产生，当它检测并保持＆amp; R＆R信号。

公开(公告)号：US4447745A

公开(公告)日：1984-05-08

申请号：US322719

申请日：1981-11-18

申请人： Yoshihiro Takemae ,  Seiji Enomoto ,  Shigeki Nozaki ,  Tsutomu Mezawa ,  Katsuhiko Kabashima

发明人： Yoshihiro Takemae ,  Seiji Enomoto ,  Shigeki Nozaki ,  Tsutomu Mezawa ,  Katsuhiko Kabashima

IPC分类号： G11C11/417 ,  G06F1/04 ,  G11C11/407 ,  G11C11/4076 ,  G11C11/418 ,  H03K19/017 ,  H03K19/0185 ,  H03K19/096 ,  H03K5/135

CPC分类号： G11C11/4076 ,  G11C11/418 ,  H03K19/01735 ,  H03K19/01855

摘要： A semiconductor circuit used as a buffer circuit having an input stage circuit for receiving an input clock signal and an inverted input clock signal, a bootstrap circuit including a transistor for receiving the output of the input stage circuit and for maintaining the gate voltage of the transistor at a high level during the standby period, and an output circuit, including a transistor which is switched on and off by the output of the bootstrap circuit, for generating an output clock signal; the semiconductor circuit further comprising a current leak circuit for maintaining, during the standby period, the voltage of a point in the semiconductor circuit which is charged during the standby period at the value corresponding to the voltage of the power source, whereby the delay of the output clock signal, caused of the fluctuation by the voltage of the power supply during the standby period, is improved and then the high speed access time in the dynamic memory is carried out.

摘要翻译： 一种用作缓冲电路的半导体电路，具有用于接收输入时钟信号和反相输入时钟信号的输入级电路，自举电路包括用于接收输入级电路的输出并保持晶体管的栅极电压的晶体管 在待机期间处于高电平;以及输出电路，包括由所述自举电路的输出接通和断开的晶体管，用于产生输出时钟信号; 所述半导体电路还包括电流泄漏电路，用于在所述待机期间保持所述半导体电路中在所述待机期间中以与所述电源的电压对应的值被充电的点的电压，由此所述延迟 在待机期间由电源的电压引起的输出时钟信号被提高，然后执行动态存储器中的高速访问时间。

公开(公告)号：US4482825A

公开(公告)日：1984-11-13

申请号：US326899

申请日：1981-12-02

申请人： Shigeki Nozaki ,  Yoshihiro Takemae ,  Katsuhiko Kabashima ,  Seiji Enomoto

发明人： Shigeki Nozaki ,  Yoshihiro Takemae ,  Katsuhiko Kabashima ,  Seiji Enomoto

IPC分类号： H01L21/822 ,  G11C11/4074 ,  G11C11/4076 ,  G11C11/4094 ,  H01L21/82 ,  H01L23/52 ,  H01L23/58 ,  H01L27/04 ,  H03K17/06 ,  H01L27/02 ,  H03K17/14 ,  H03K17/16

CPC分类号： H01L23/58 ,  G11C11/4074 ,  G11C11/4076 ,  G11C11/4094 ,  H01L21/82 ,  H01L23/52 ,  H01L2924/0002

摘要： In a semiconductor device having a signal line on which a voltage higher than the voltage supply is generated, a conductive layer following the potential variance of the voltage supply is positioned under an insulating film directly below the signal line in order to make the level of the signal line follow the potential variance of the voltage supply.

摘要翻译： 在具有高于电压源的电压的信号线的半导体器件中，与电压源的电位变化相反的导电层位于信号线正下方的绝缘膜的下方， 信号线跟随电压的潜在变化。

公开(公告)号：US4550289A

公开(公告)日：1985-10-29

申请号：US453115

申请日：1982-12-27

申请人： Katsuhiko Kabashima ,  Yoshihiro Takemae ,  Shigeki Nozaki ,  Tsuyoshi Ohira ,  Hatsuo Miyahara ,  Masakazu Kanai ,  Seiji Enomoto

发明人： Katsuhiko Kabashima ,  Yoshihiro Takemae ,  Shigeki Nozaki ,  Tsuyoshi Ohira ,  Hatsuo Miyahara ,  Masakazu Kanai ,  Seiji Enomoto

IPC分类号： G01R31/26 ,  G06F11/00 ,  H01L21/66 ,  H01L21/822 ,  H01L27/00 ,  H01L27/04 ,  G01R31/28

CPC分类号： G01R31/26 ,  G06F11/006

摘要： A semiconductor integrated circuit (IC) device includes therein a test circuit. The test circuit operates to distinguish the power source level during the testing or ground level occurring at an internal node located inside the semiconductor chip. The test circuit includes a series-connected MIS transistor and an MIS diode. The gate of the MIS transistor is connected to the internal node. The MIS diode is connected to an external input/output (I/O) pin. The level at the internal node, i.e., the power source level or the ground level, can be distinguished by a first voltage level or a second voltage level applied to the external I/O pin, whichever enables a current to be drawn from the external I/O pin.

摘要翻译： 半导体集成电路（IC）装置包括测试电路。 测试电路用于在测试期间区分电源电平或在位于半导体芯片内部的内部节点处发生地电平。 测试电路包括串联连接的MIS晶体管和MIS二极管。 MIS晶体管的栅极连接到内部节点。 MIS二极管连接到外部输入/输出（I / O）引脚。 可以通过施加到外部I / O引脚的第一电压电平或第二电压电平来区分内部节点的电平，即电源电平或接地电平，无论哪一个使外部电流从外部 I / O引脚。

公开(公告)号：US4496850A

公开(公告)日：1985-01-29

申请号：US347465

申请日：1982-02-10

申请人： Yoshihiro Takemae ,  Shigeki Nozaki ,  Katsuhiko Kabashima ,  Seiji Enomoto

发明人： Yoshihiro Takemae ,  Shigeki Nozaki ,  Katsuhiko Kabashima ,  Seiji Enomoto

IPC分类号： G11C11/407 ,  G11C11/4076 ,  G11C11/408 ,  H03K5/02 ,  H03K17/06 ,  H03K19/094 ,  H03K17/04 ,  H03K17/693 ,  H03K19/017

CPC分类号： G11C11/4085 ,  G11C11/4076 ,  H03K5/023

摘要： A semiconductor circuit for driving a clock signal line comprising a first circuit for pulling up the potential of the clock signal line to the source voltage and a second circuit for pulling down the potential of the clock signal line to a lower voltage. A capacitor is connected to the clock signal line for receiving a potential push signal and pushing the potential of the clock signal line higher than the source voltage. The capacitor performs the function of capacitance only after the potential of the clock signal line is raised to the source voltage. The operational speed of a dynamic memory device associated with the semiconductor device is then enhanced.

摘要翻译： 一种用于驱动时钟信号线的半导体电路，包括用于将时钟信号线的电位提升到源极电压的第一电路和用于将时钟信号线的电位下拉到较低电压的第二电路。 电容器连接到时钟信号线，用于接收潜在的推送信号，并推动时钟信号线的电位高于源极电压。 只有在时钟信号线的电位升高到电源电压之后，电容才能执行电容。 然后增强与半导体器件相关联的动态存储器件的操作速度。

公开(公告)号：US4458337A

公开(公告)日：1984-07-03

申请号：US354498

申请日：1982-03-03

申请人： Yoshihiro Takemae ,  Shigeki Nozaki ,  Tsutomu Mezawa ,  Katsuhiko Kabashima ,  Seiji Enomoto

发明人： Yoshihiro Takemae ,  Shigeki Nozaki ,  Tsutomu Mezawa ,  Katsuhiko Kabashima ,  Seiji Enomoto

IPC分类号： G11C11/413 ,  G11C11/408 ,  H03K3/356 ,  G11C13/00

CPC分类号： H03K3/356017 ,  H03K3/35606

摘要： A buffer circuit comprises a flip-flop which is receives an external input via a first input circuit and a reference voltage via a second input circuit. Internal complementary outputs are then produced via an output circuit. The flip-flop cooperates with at least one level setting device by way of a second input circuit. The level setting device functions to produce a voltage level to deactivate the second input circuit during activation of the flip-flop.

摘要翻译： 缓冲电路包括经由第一输入电路接收外部输入的触发器和经由第二输入电路的参考电压。 然后通过输出电路产生内部互补输出。 触发器通过第二输入电路与至少一个电平设置装置协作。 电平设置装置用于产生电压电平，以在触发器激活期间停用第二输入电路。

公开(公告)号：US4451908A

公开(公告)日：1984-05-29

申请号：US354499

申请日：1982-03-03

申请人： Yoshihiro Takemae ,  Shigeki Nozaki ,  Katsuhiko Kabashima ,  Seiji Enomoto ,  Tsutomu Mezawa

发明人： Yoshihiro Takemae ,  Shigeki Nozaki ,  Katsuhiko Kabashima ,  Seiji Enomoto ,  Tsutomu Mezawa

IPC分类号： G11C11/403 ,  G11C11/406 ,  G11C11/408 ,  G11C11/40

CPC分类号： G11C11/4082 ,  G11C11/406

摘要： An address buffer for a dynamic memory includes a flip-flop. The flip-flop is coupled at its one input/output terminal with both a first input circuit and a third input circuit connected in parallel with each other and at its other input/output terminal with a second input circuit. The second input circuit receives a reference voltage and is activated by an external address timing clock during a normal operation mode. The first input circuit is also activated by the external address timing clock, but receives an external address. The third input circuit receives an internal refresh address and is activated by an internal refresh address. The address buffer cooperates with a switcher which produces the internal refresh address timing clock and the external address timing clock, alternatively, by switching a basic timing clock generated by an address drive clock generator.

摘要翻译： 用于动态存储器的地址缓冲器包括触发器。 触发器在其一个输入/输出端子处与第一输入电路和第三输入电路耦合，第一输入电路和第三输入电路彼此并联并且在其另一输入/输出端与第二输入电路连接。 第二输入电路接收参考电压，并在正常操作模式期间由外部地址定时时钟激活。 第一个输入电路也由外部地址定时时钟激活，但接收一个外部地址。 第三输入电路接收内部刷新地址，并由内部刷新地址激活。 地址缓冲器与产生内部刷新地址定时时钟和外部地址定时时钟的切换器配合，或者通过切换由地址驱动时钟发生器产生的基本定时时钟。

公开(公告)号：US4504929A

公开(公告)日：1985-03-12

申请号：US444499

申请日：1982-11-24

申请人： Yoshihiro Takemae ,  Tsuyoshi Ohira ,  Seiji Enomoto

发明人： Yoshihiro Takemae ,  Tsuyoshi Ohira ,  Seiji Enomoto

IPC分类号： G11C11/401 ,  G11C11/4091 ,  G11C29/00 ,  G11C29/02 ,  G11C29/50 ,  G11C11/40

CPC分类号： G11C29/026 ,  G11C11/4091 ,  G11C29/02 ,  G11C29/50 ,  G11C11/401 ,  G11C2029/5004

摘要： A dynamic semiconductor memory device provides a selected real cell, which is connected to a first of a pair of bit lines connected to a sense amplifier, and a dummy cell which is connected to a second of the pair of bit lines so as to perform a read-out operation. The dynamic semiconductor memory cell further provides an active restore circuit for pulling up the bit line potential of the bit line on the higher potential side of the pair of bit lines, in which the potential difference is increased by the read-out operation. The dynamic semiconductor cell can also provide a write-in circuit for charging the selected real cell through the bit line. A test power source pad is provided in the active restore circuit or the write in circuit so that when the reference level of the real cell is tested an optional power source can be applied from the test power source pad instead of from a normal power source.

摘要翻译： 动态半导体存储器件提供选择的实数单元，其连接到连接到读出放大器的一对位线中的第一个，以及连接到所述一对位线中的第二位的虚拟单元，以执行 读出操作。 动态半导体存储单元进一步提供有源恢复电路，用于提升位线对的位线电位，该位线位于通过读出操作增加电位差的位线对的较高电位侧。 动态半导体单元还可以提供用于通过位线对所选择的真实单元进行充电的写入电路。 在有源恢复电路或写入电路中提供测试电源焊盘，使得当测试真实单元的参考电平时，可以从测试电源焊盘而不是普通电源施加可选的电源。