摘要:
A photoacid generator represented by the following formula (1), a method for producing the photoacid generator, and a resist composition containing the photoacid generator are provided. wherein in the formula (1), Y1, Y2, X, R1, R2, n1, n2 and A+ have the same meanings as defined in the detailed description of the invention. The photoacid generator can maintain an appropriate contact angle at the time of ArF liquid immersion lithography, can reduce defects occurring during liquid immersion lithography, and has excellent solubility in resist solvents and excellent compatibility with resins. Furthermore, the photoacid generator can be produced by an efficient and simple method using an epoxy compound that is industrially easily available.
摘要:
A photoacid generator represented by the following formula (1), a method for producing the photoacid generator, and a resist composition containing the photoacid generator are provided. wherein in the formula (1), Y1, Y2, X, R1, R2, n1, n2 and A+ have the same meanings as defined in the detailed description of the invention. The photoacid generator can maintain an appropriate contact angle at the time of ArF liquid immersion lithography, can reduce defects occurring during liquid immersion lithography, and has excellent solubility in resist solvents and excellent compatibility with resins. Furthermore, the photoacid generator can be produced by an efficient and simple method using an epoxy compound that is industrially easily available.
摘要:
Provided is a copolymer containing a repeating unit represented by the following formula (1): wherein R1 represents an alkanediyl group, a heteroalkanediyl group, a cycloalkanediyl group, a heterocycloalkanediyl group, an arylene group, a heteroarylene group, or an alkylarylene group; R2 represents a hydrogen atom, an alkyl group, a heteroalkyl group, a cycloalkyl group, a heterocycloalkyl group, an aryl group, a heteroaryl group, an alkoxy group, or an alkylalkoxy group; R3, R4, R5 and R6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; n1 represents an integer from 0 to 10; and n2 represents an integer from 0 to 10.The copolymer, when incorporated into a resist composition, can provide a satisfactory resist pattern with high sensitivity, high resolution, high etching resistance and a reduced amount of outgas.
摘要翻译:提供含有下式(1)表示的重复单元的共聚物:其中R1表示烷二基,杂烷二基,环烷二基,杂环烷二基,亚芳基,亚杂芳基或烷基亚芳基。 R2表示氢原子,烷基,杂烷基,环烷基,杂环烷基,芳基,杂芳基,烷氧基或烷基烷氧基; R 3,R 4,R 5和R 6各自独立地表示氢原子或碳原子数1〜5的烷基。 n1表示0〜10的整数, n2表示0〜10的整数。当共聚物掺入抗蚀剂组合物中时,可以提供令人满意的抗敏剂图案,其具有高灵敏度,高分辨率,高耐蚀刻性和减少的废气量。
摘要:
Provided is a copolymer. The copolymer, when incorporated into a resist composition, can provide a satisfactory resist pattern with high sensitivity, high resolution, high etching resistance and a reduced amount of outgas.
摘要:
Disclosed herein is a method for preparing a nanophosphor from a metal hydroxy carbonate and a nanophosphor prepared by the method. The method is capable of mass-production of a uniform particle-size nanophosphor with superior dispersibility and enables reduction in preparation costs. The nanophosphor prepared by the disclosed method exhibits high luminescence efficiency.
摘要:
Disclosed herein are a metal hydroxy carbonate nanoparticle-coated phosphor and a preparation method thereof. The phosphor coated with metal hydroxy carbonate nanoparticles exhibit improved thermal stability and an increased luminance lifespan, when applied to display devices, e.g., PDPs and lamps.
摘要:
Disclosed is a deep red phosphor (600 nm to 670 nm) of Mn activity having a chemical formula of (k-x)MgOxAF2GeO2:yMn4+ where k is a real number between 2.8 and 5.0, x is a real number between 0.1 and 0.7, y is a real number between 0.005 and 0.015, and A is Ca, Sr, Ba, Zn, or a mixture thereof, or a mixture of Mg and at least one of Ca, Sr, Ba and Zn. The deep red phosphor has a high excitation efficiency and thus can be applied to light emitting diode (LED) packages, which uses an ultraviolet (UV) light source or a blue light source as an excitation light source. The deep red phosphor is applied to a phosphor layer of a phosphor lamp such as a cold cathode fluorescence lamp (CCFL) and a flat fluorescent lamp (FFL).
摘要翻译:公开了具有化学式为(kx)MgO x AF 2 GeO 2:y Mn 4+的Mn活性的深红色荧光体(600nm至670nm),其中k为2.8至5.0之间的实数,x为0.1至0.7之间的实数,y为 实数为0.005〜0.015,A为Ca,Sr,Ba,Zn或其混合物,或Mg与Ca,Sr,Ba和Zn中的至少一种的混合物。 深红色荧光体具有高的激发效率,因此可以应用于使用紫外线(UV)光源或蓝色光源作为激发光源的发光二极管(LED)封装。 将深红色荧光体施加到诸如冷阴极荧光灯(CCFL)和平面荧光灯(FFL)的荧光灯的荧光体层。
摘要:
An organic electroluminescent (EL) display device includes an anode, a hole transport layer formed on the anode, a light-emitting layer formed on the hole transport layer, a cathode formed on the light-emitting layer, and an electron injection layer including a metal oxide represented by formula 1 formed between the light-emitting layer and the cathode. Formula 1 is MAxMByOz, where MA denotes an alkali metal or alkali earth metal, MB is a group IV or V metal, x is a number between 1 and 2 inclusive, y is a number between 1 and 2, and z is a number between 2 and 3 inclusive.
摘要:
Provided are a composition for an organic polymer gate insulating layer and an Organic Thin Film Transistor (OTFT) using the same. The composition includes an insulating organic polymer including at least one selected from the group consisting of polymethylmethacrylate (PMMA), polyvinylalcohol (PVA), polyvinylpyrrolidone (PVP), poly(vinyl phenol) (PVPh) and a copolymer thereof, a crosslinking monomer having two or more double bonds, and a photoinitiator. The OTFT includes a gate insulating layer of a semi-interpenetrating polymer network formed of the composition. The composition for a photoreactive organic polymer gate insulating layer has a photochemical characteristic that enables micropatterning, and can be formed into a layer having excellent chemical resistance, thermal resistance, surface characteristics and electrical characteristics.