Photoacid generator, method for producing the same, and resist composition comprising the same
    1.
    发明授权
    Photoacid generator, method for producing the same, and resist composition comprising the same 有权
    光生酸产生剂,其制备方法和含有它的抗蚀剂组合物

    公开(公告)号:US08617789B2

    公开(公告)日:2013-12-31

    申请号:US13367896

    申请日:2012-02-07

    IPC分类号: C07C69/76 G03F7/004

    摘要: A photoacid generator represented by the following formula (1), a method for producing the photoacid generator, and a resist composition containing the photoacid generator are provided. wherein in the formula (1), Y1, Y2, X, R1, R2, n1, n2 and A+ have the same meanings as defined in the detailed description of the invention. The photoacid generator can maintain an appropriate contact angle at the time of ArF liquid immersion lithography, can reduce defects occurring during liquid immersion lithography, and has excellent solubility in resist solvents and excellent compatibility with resins. Furthermore, the photoacid generator can be produced by an efficient and simple method using an epoxy compound that is industrially easily available.

    摘要翻译: 提供由下式(1)表示的光致酸发生剂,光酸产生剂的制造方法和含有光酸产生剂的抗蚀剂组合物。 其中,在式(1)中,Y1,Y2,X,R1,R2,n1,n2和A +具有与本发明的详细说明中所定义的相同的含义。 光致酸发生器可以在ArF液浸光刻时保持适当的接触角,可以减少液浸光刻过程中发生的缺陷,并且在抗蚀剂溶剂中具有优异的溶解性和与树脂的相容性优异。 此外,光致酸产生剂可以通过使用工业上容易获得的环氧化合物的有效且简单的方法制备。

    PHOTOACID GENERATOR, METHOD FOR PRODUCING THE SAME, AND RESIST COMPOSITION COMPRISING THE SAME
    2.
    发明申请
    PHOTOACID GENERATOR, METHOD FOR PRODUCING THE SAME, AND RESIST COMPOSITION COMPRISING THE SAME 有权
    光致发电机及其制造方法以及包含该光电发生器的耐热组合物

    公开(公告)号:US20120203024A1

    公开(公告)日:2012-08-09

    申请号:US13367896

    申请日:2012-02-07

    摘要: A photoacid generator represented by the following formula (1), a method for producing the photoacid generator, and a resist composition containing the photoacid generator are provided. wherein in the formula (1), Y1, Y2, X, R1, R2, n1, n2 and A+ have the same meanings as defined in the detailed description of the invention. The photoacid generator can maintain an appropriate contact angle at the time of ArF liquid immersion lithography, can reduce defects occurring during liquid immersion lithography, and has excellent solubility in resist solvents and excellent compatibility with resins. Furthermore, the photoacid generator can be produced by an efficient and simple method using an epoxy compound that is industrially easily available.

    摘要翻译: 提供由下式(1)表示的光致酸发生剂,光酸产生剂的制造方法和含有光酸产生剂的抗蚀剂组合物。 其中,在式(1)中,Y1,Y2,X,R1,R2,n1,n2和A +具有与本发明的详细说明中所定义的相同的含义。 光致酸发生器可以在ArF液浸光刻时保持适当的接触角,可以减少液浸光刻过程中发生的缺陷,并且在抗蚀剂溶剂中具有优异的溶解性和与树脂的相容性优异。 此外,光致酸产生剂可以通过使用工业上容易获得的环氧化合物的有效且简单的方法制备。

    POLYMER, METHOD FOR PRODUCING THE SAME, AND RESIST COMPOSITION CONTAINING THE SAME
    3.
    发明申请
    POLYMER, METHOD FOR PRODUCING THE SAME, AND RESIST COMPOSITION CONTAINING THE SAME 有权
    聚合物,其制造方法和含有该组合物的耐腐蚀组合物

    公开(公告)号:US20120165499A1

    公开(公告)日:2012-06-28

    申请号:US13330971

    申请日:2011-12-20

    IPC分类号: C08G63/66

    摘要: Provided is a copolymer containing a repeating unit represented by the following formula (1): wherein R1 represents an alkanediyl group, a heteroalkanediyl group, a cycloalkanediyl group, a heterocycloalkanediyl group, an arylene group, a heteroarylene group, or an alkylarylene group; R2 represents a hydrogen atom, an alkyl group, a heteroalkyl group, a cycloalkyl group, a heterocycloalkyl group, an aryl group, a heteroaryl group, an alkoxy group, or an alkylalkoxy group; R3, R4, R5 and R6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; n1 represents an integer from 0 to 10; and n2 represents an integer from 0 to 10.The copolymer, when incorporated into a resist composition, can provide a satisfactory resist pattern with high sensitivity, high resolution, high etching resistance and a reduced amount of outgas.

    摘要翻译: 提供含有下式(1)表示的重复单元的共聚物:其中R1表示烷二基,杂烷二基,环烷二基,杂环烷二基,亚芳基,亚杂芳基或烷基亚芳基。 R2表示氢原子,烷基,杂烷基,环烷基,杂环烷基,芳基,杂芳基,烷氧基或烷基烷氧基; R 3,R 4,R 5和R 6各自独立地表示氢原子或碳原子数1〜5的烷基。 n1表示0〜10的整数, n2表示0〜10的整数。当共聚物掺入抗蚀剂组合物中时,可以提供令人满意的抗敏剂图案,其具有高灵敏度,高分辨率,高耐蚀刻性和减少的废气量。

    Deep red phosphor and method of manufacturing the same
    5.
    发明授权
    Deep red phosphor and method of manufacturing the same 有权
    深红色荧光粉及其制造方法

    公开(公告)号:US08178000B2

    公开(公告)日:2012-05-15

    申请号:US12028216

    申请日:2008-02-08

    IPC分类号: C09K11/08 C09K11/66 C09K11/61

    CPC分类号: C09K11/665 H01J61/44

    摘要: Disclosed is a deep red phosphor (600 nm to 670 nm) of Mn activity having a chemical formula of (k-x)MgOxAF2GeO2:yMn4+ where k is a real number between 2.8 and 5.0, x is a real number between 0.1 and 0.7, y is a real number between 0.005 and 0.015, and A is Ca, Sr, Ba, Zn, or a mixture thereof, or a mixture of Mg and at least one of Ca, Sr, Ba and Zn. The deep red phosphor has a high excitation efficiency and thus can be applied to light emitting diode (LED) packages, which uses an ultraviolet (UV) light source or a blue light source as an excitation light source. The deep red phosphor is applied to a phosphor layer of a phosphor lamp such as a cold cathode fluorescence lamp (CCFL) and a flat fluorescent lamp (FFL).

    摘要翻译: 公开了具有化学式为(kx)MgO x AF 2 GeO 2:y Mn 4+的Mn活性的深红色荧光体(600nm至670nm),其中k为2.8至5.0之间的实数,x为0.1至0.7之间的实数,y为 实数为0.005〜0.015,A为Ca,Sr,Ba,Zn或其混合物,或Mg与Ca,Sr,Ba和Zn中的至少一种的混合物。 深红色荧光体具有高的激发效率,因此可以应用于使用紫外线(UV)光源或蓝色光源作为激发光源的发光二极管(LED)封装。 将深红色荧光体施加到诸如冷阴极荧光灯(CCFL)和平面荧光灯(FFL)的荧光灯的荧光体层。

    Organic electroluminescence device
    6.
    发明授权
    Organic electroluminescence device 有权
    有机电致发光器件

    公开(公告)号:US06902834B2

    公开(公告)日:2005-06-07

    申请号:US10691627

    申请日:2003-10-24

    IPC分类号: H05B33/26 H01L51/50 H05B33/12

    摘要: An organic electroluminescent (EL) display device includes an anode, a hole transport layer formed on the anode, a light-emitting layer formed on the hole transport layer, a cathode formed on the light-emitting layer, and an electron injection layer including a metal oxide represented by formula 1 formed between the light-emitting layer and the cathode. Formula 1 is MAxMByOz, where MA denotes an alkali metal or alkali earth metal, MB is a group IV or V metal, x is a number between 1 and 2 inclusive, y is a number between 1 and 2, and z is a number between 2 and 3 inclusive.

    摘要翻译: 有机电致发光(EL)显示装置包括阳极,在阳极上形成的空穴传输层,形成在空穴传输层上的发光层,形成在发光层上的阴极,以及电子注入层, 在发光层和阴极之间形成由式1表示的金属氧化物。 式1是MA表示碱金属或碱土金属,MB是IV族或V族金属 ,x是1和2之间的数字,y是1和2之间的数字,z是2和3之间的数字,包括3和3。

    Composition for organic polymer gate insulating layer and organic thin film transistor using the same
    9.
    发明授权
    Composition for organic polymer gate insulating layer and organic thin film transistor using the same 失效
    有机高分子栅极绝缘层的组成和使用其的有机薄膜晶体管

    公开(公告)号:US07741635B2

    公开(公告)日:2010-06-22

    申请号:US12182577

    申请日:2008-07-30

    IPC分类号: H01L35/24 H01L51/00

    CPC分类号: H01L51/052 H01L51/0545

    摘要: Provided are a composition for an organic polymer gate insulating layer and an Organic Thin Film Transistor (OTFT) using the same. The composition includes an insulating organic polymer including at least one selected from the group consisting of polymethylmethacrylate (PMMA), polyvinylalcohol (PVA), polyvinylpyrrolidone (PVP), poly(vinyl phenol) (PVPh) and a copolymer thereof, a crosslinking monomer having two or more double bonds, and a photoinitiator. The OTFT includes a gate insulating layer of a semi-interpenetrating polymer network formed of the composition. The composition for a photoreactive organic polymer gate insulating layer has a photochemical characteristic that enables micropatterning, and can be formed into a layer having excellent chemical resistance, thermal resistance, surface characteristics and electrical characteristics.

    摘要翻译: 提供一种有机高分子栅极绝缘层和使用其的有机薄膜晶体管(OTFT)的组合物。 该组合物包括绝缘有机聚合物,其包括选自聚甲基丙烯酸甲酯(PMMA),聚乙烯醇(PVA),聚乙烯吡咯烷酮(PVP),聚(乙烯基苯酚)(PVPh)及其共聚物中的至少一种,具有两个 或更多双键,以及光引发剂。 OTFT包括由该组合物形成的半互穿聚合物网络的栅极绝缘层。 光反应性有机聚合物栅极绝缘层的组合物具有能够进行微图案化的光化学特性,并且可以形成为具有优异的耐化学性,耐热性,表面特性和电特性的层。