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    Optical recording medium
    1.
    发明授权
    Optical recording medium 失效
    光记录介质

    公开(公告)号：US5208088A

    公开(公告)日：1993-05-04

    申请号：US795443

    申请日：1991-11-21

    申请人： Junji Tominaga ,  Hiroyuki Arioka ,  Akio Ogawa

    发明人： Junji Tominaga ,  Hiroyuki Arioka ,  Akio Ogawa

    IPC分类号： B41M5/26 ,  G11B7/0045 ,  G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B7/258

    CPC分类号： G11B7/259 ,  G11B7/00455 ,  G11B7/243 ,  G11B7/257 ,  G11B2007/24304 ,  G11B2007/24308 ,  G11B2007/24316 ,  G11B2007/24324 ,  G11B2007/25706 ,  G11B7/2534 ,  G11B7/2542 ,  Y10S428/913

    摘要： An optical recording medium capable of reproduction in accordance with the CD standard is provided. The medium includes a reflective thin film of Ag or similar element, an intermediate thin film of Zn or similar element, and a low-melting thin film of Te or similar element wherein light irradiation causes the reflective thin film element and the low-melting thin film element to diffuse into each other to form an alloy or compound of reduced reflectivity. It is possible to determine through simulation a combination of atoms of the respective thin films which form a cluster having HOMO where electrons in the reflective thin film atoms and electrons in the low-melting thin film atoms do not form a hybrid orbital and LUMO where electrons in the reflective thin film atoms and electrons in the low-melting thin film atoms form a hybrid orbital.

    摘要翻译： 提供能够根据CD标准再现的光学记录介质。 介质包括Ag或类似元件的反射薄膜，Zn或类似元素的中间薄膜，以及Te或类似元素的低熔点薄膜，其中光照射引起反射薄膜元件和低熔点薄膜 膜元件彼此扩散以形成具有降低的反射率的合金或化合物。 可以通过模拟来确定形成具有HOMO的簇的各个薄膜的原子的组合，其中反射薄膜原子中的电子和低熔点薄膜原子中的电子不形成混合轨道和LUMO，其中电子 在反射薄膜中，原子和电子在低熔点薄膜原子中形成混合轨道。

    SOLID-STATE MEMORY
    5.
    发明申请
    SOLID-STATE MEMORY 有权
    固态存储器

    公开(公告)号：US20110315942A1

    公开(公告)日：2011-12-29

    申请号：US13138545

    申请日：2010-02-24

    申请人： Junji Tominaga ,  Paul Fons ,  Alexander Kolobov

    发明人： Junji Tominaga ,  Paul Fons ,  Alexander Kolobov

    IPC分类号： H01L45/00

    CPC分类号： G11C13/0004 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1625

    摘要： A solid-state memory that requires a lower current during recording and erasing data and can repeatedly rewrite data an increased number of times. In at least one example embodiment, the solid-state memory includes a recording layer that includes a laminated structure in which electric properties are changed in response to a phase separation. The laminated structure includes a film containing an Sb atom(s) and a film containing a Ge atom(s), which films constitute a superlattice structure. In the laminated structure, phase separation of the film containing the Sb atom and the film containing the Ge atom allows data to be recorded and erased efficiently.

    摘要翻译： 固态存储器在记录和擦除数据期间需要较低的电流，并可以重复地重写数据次数。 在至少一个示例性实施例中，固态存储器包括记录层，其包括电性能响应于相分离而改变的叠层结构。 层叠结构包括含有Sb原子的膜和含有Ge原子的膜，该膜构成超晶格结构。 在层叠结构中，含有Sb原子的膜和含有锗原子的膜的相分离允许有效地记录和擦除数据。

    SOLID-STATE MEMORY MANUFACTURING METHOD
    6.
    发明申请
    SOLID-STATE MEMORY MANUFACTURING METHOD 有权
    固态存储器制造方法

    公开(公告)号：US20110207284A1

    公开(公告)日：2011-08-25

    申请号：US12998482

    申请日：2009-09-28

    申请人： Junji Tominaga ,  Takayuki Shima ,  Alexander Kolobov ,  Paul Fons ,  Robert Simpson ,  Reiko Kondo

    发明人： Junji Tominaga ,  Takayuki Shima ,  Alexander Kolobov ,  Paul Fons ,  Robert Simpson ,  Reiko Kondo

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1625 ,  H01L45/06 ,  H01L45/144

    摘要： A method of at least one embodiment of the present invention of manufacturing a solid-state memory is a method of manufacturing a solid-state memory, the solid-state memory including a recording film whose electric characteristics are varied by phase transformation, the method including: forming the recording film by forming a laminate of two or more layers so that a superlattice structure is provided, each of the layers having a parent phase which shows solid-to-solid phase-transformation, the recording film being formed at a temperature not lower than a temperature highest among crystallization temperatures of the parent phases. It is thus possible to manufacture a solid-state memory which requires lower current for recording and erasing data and has a greater rewriting cycle number.

    摘要翻译： 制造固态存储器的本发明的至少一个实施例的方法是制造固态存储器的方法，该固态存储器包括其电特性通过相变而变化的记录膜，该方法包括 ：通过形成两层或更多层的叠层来形成记录膜，从而提供超晶格结构，每个层具有显示固 - 相相变的母相，记录膜在不是的温度下形成 低于母相结晶温度的最高温度。 因此，可以制造需要较低电流记录和擦除数据的固态存储器，并具有更大的重写周期数。

    Chip for Raman scattering enhancement and molecular sensing device including the chip
    8.
    发明授权
    Chip for Raman scattering enhancement and molecular sensing device including the chip 失效
    用于拉曼散射增强的芯片和包括芯片的分子感测装置

    公开(公告)号：US07692787B2

    公开(公告)日：2010-04-06

    申请号：US11883405

    申请日：2006-01-26

    申请人： Makoto Fujimaki ,  Junji Tominaga ,  Yasuhiko Iwanabe

    发明人： Makoto Fujimaki ,  Junji Tominaga ,  Yasuhiko Iwanabe

    IPC分类号： G01J3/44 ,  G01N21/65

    CPC分类号： G01N21/658 ,  G01N21/65 ,  G01N2021/651

    摘要： The present invention aims to provide a chip applied to a molecular sensing device which carries out Raman spectroscopic analysis utilizing Raman scattering enhancement due to plasmons, and that achieves higher sensitivity and stability of its sensing sensitivity and miniaturization, and to provide a molecular sensing device including the chip. As the chip for Raman scattering enhancement applied to the molecular sensing device using the Raman spectroscopic analysis, which has an excitation light source for Raman scattering, a chip for Raman scattering enhancement and a photodetector for observing the Raman scattering, the present invention employs a chip having a molecular detecting element in which a transparent protection material thin film 32 composed of a dielectric material thin film or semiconducting material thin film is formed on a thin film 31 containing the noble metal oxide, and utilizes the Raman scattering enhancement by the thin film containing the noble metal oxide.

    摘要翻译： 本发明旨在提供一种应用于分子感测装置的芯片，其利用等离子体激元进行拉曼光谱分析，利用拉曼散射增强，并且实现其感测灵敏度和小型化的更高的灵敏度和稳定性，并且提供一种分子感测装置，包括 芯片。 作为使用拉曼散射用激发光源的拉曼光谱分析法使用拉曼散射增强用芯片和用于观察拉曼散射的光检测器的拉曼散射增强用芯片，本发明采用芯片 具有分子检测元件，其中在包含贵金属氧化物的薄膜31上形成由介电材料薄膜或半导体材料薄膜构成的透明保护材料薄膜32，并利用包含 贵金属氧化物。

    Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metal
    10.
    发明授权
    Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metal 有权
    由包括稀土类过渡金属的层状结构的加热部分形成的化合物半导体

    公开(公告)号：US07479656B2

    公开(公告)日：2009-01-20

    申请号：US11109389

    申请日：2005-04-19

    申请人： Joo-Ho Kim ,  Junji Tominaga

    发明人： Joo-Ho Kim ,  Junji Tominaga

    IPC分类号： H01L29/10

    CPC分类号： H01L29/247 ,  H01L21/76888 ,  H01L23/5258 ,  H01L27/10873 ,  H01L29/263 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated.

    摘要翻译： 制造化合物半导体的方法包括以下步骤：形成包括氧或硫的电介质层的层叠结构，以及形成在介电层之间的层间，包括对氧和硫具有高反应性的稀土过渡金属，并加热 分层结构。 作为元件的化学反应和扩散的结果，可以根据加热部分的温度，将层状结构的加热部分改变为半导体或绝缘体。