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    MAGNETIC MEMORY DEVICE
    1.
    发明公开
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20230410868A1

    公开(公告)日：2023-12-21

    申请号：US18184682

    申请日：2023-03-16

    Applicant: Kioxia Corporation

    Inventor： Hideyuki SUGIYAMA ,  Kenji FUKUDA ,  Yoshiaki ASAO ,  Kazumasa SUNOUCHI

    IPC: G11C11/16

    CPC classification number: G11C11/1659 ,  G11C11/1675

    Abstract: According to one embodiment, a magnetic memory device includes a first wiring line, a plurality of second wiring lines, a plurality of first memory cells each including a first magnetoresistance effect element and a first selector connected in series, and a first switch. A respective one of the first memory cells is connected between the first wiring line and a respective one of the second wiring lines, a first voltage is applied to the second wiring line connected to a selected first memory cell, and a second voltage is applied to the second wiring line connected to a non-selected first memory cell, a first terminal of the first switch is connected to the first wiring line, and a third voltage is applied to a second terminal of the first switch.

    MEMORY DEVICE
    2.
    发明申请
    MEMORY DEVICE 有权

    公开(公告)号：US20230079445A1

    公开(公告)日：2023-03-16

    申请号：US17692625

    申请日：2022-03-11

    Applicant: Kioxia Corporation

    Inventor： Kenji FUKUDA ,  Hideyuki SUGIYAMA ,  Masahiko NAKAYAMA ,  Hiroyuki KANAYA ,  Soichi OIKAWA

    IPC: H01L27/22

    Abstract: According to one embodiment, a memory device includes a first memory cell, a second memory cell adjacent to the first memory cell in a first direction, and a third memory cell adjacent to the first memory cell in a second direction, each of the first, second, and third memory cells including a resistance change memory element and a switching element. The switching element includes first and second electrodes, and a switching material layer between the first and second electrodes, the first and second electrodes overlap each other when viewed from the first direction, the first electrodes in the first and second memory cells are apart from each other, and the switching material layers in the first and second memory cells are continuously provided.

    MAGNETIC MEMORY DEVICE
    3.
    发明申请
    MAGNETIC MEMORY DEVICE 有权

    公开(公告)号：US20250098545A1

    公开(公告)日：2025-03-20

    申请号：US18829343

    申请日：2024-09-10

    Applicant: Kioxia Corporation

    Inventor： Kenji FUKUDA ,  Tadaaki OIKAWA ,  Kazuya SAWADA ,  Soichi OIKAWA

    IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/85

    Abstract: According to one embodiment, a magnetic memory device includes a first ferromagnetic layer having a fixed magnetization direction, a second ferromagnetic layer having a variable magnetization direction, a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer provided on an opposite side to a side on which the first nonmagnetic layer is provided with respect to the second ferromagnetic layer. At least one of the first nonmagnetic layer and the second nonmagnetic layer is an oxide layer including magnesium (Mg) and a group 4 element. The group 4 element includes at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), and rutherfordium (Rf).

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